DE602004026447D1 - Speicheranordnung mit unipolaren and bipolaren Auswahlschaltungen - Google Patents
Speicheranordnung mit unipolaren and bipolaren AuswahlschaltungenInfo
- Publication number
- DE602004026447D1 DE602004026447D1 DE602004026447T DE602004026447T DE602004026447D1 DE 602004026447 D1 DE602004026447 D1 DE 602004026447D1 DE 602004026447 T DE602004026447 T DE 602004026447T DE 602004026447 T DE602004026447 T DE 602004026447T DE 602004026447 D1 DE602004026447 D1 DE 602004026447D1
- Authority
- DE
- Germany
- Prior art keywords
- unipolar
- selection circuits
- memory arrangement
- bipolar selection
- bipolar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/003—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/76—Array using an access device for each cell which being not a transistor and not a diode
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04104595A EP1640994B1 (de) | 2004-09-22 | 2004-09-22 | Speicheranordnung mit unipolaren and bipolaren Auswahlschaltungen |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602004026447D1 true DE602004026447D1 (de) | 2010-05-20 |
Family
ID=34929601
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004026447T Active DE602004026447D1 (de) | 2004-09-22 | 2004-09-22 | Speicheranordnung mit unipolaren and bipolaren Auswahlschaltungen |
Country Status (3)
Country | Link |
---|---|
US (1) | US7483296B2 (de) |
EP (1) | EP1640994B1 (de) |
DE (1) | DE602004026447D1 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007051795A1 (en) * | 2005-10-31 | 2007-05-10 | Innovative Silicon S.A. | Method and apparatus for varying the programming duration and/or voltage of an electrically floating body transistor, and memory cell array implementing same |
US8547756B2 (en) * | 2010-10-04 | 2013-10-01 | Zeno Semiconductor, Inc. | Semiconductor memory device having an electrically floating body transistor |
JP5549105B2 (ja) * | 2009-04-15 | 2014-07-16 | ソニー株式会社 | 抵抗変化型メモリデバイスおよびその動作方法 |
US10461084B2 (en) | 2010-03-02 | 2019-10-29 | Zeno Semiconductor, Inc. | Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making |
US9922981B2 (en) | 2010-03-02 | 2018-03-20 | Zeno Semiconductor, Inc. | Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making |
TWI490859B (zh) * | 2011-05-13 | 2015-07-01 | Macronix Int Co Ltd | 記憶體陣列裝置及其操作方法 |
US8638605B2 (en) | 2011-05-25 | 2014-01-28 | Micron Technology, Inc. | Apparatus and methods including a bipolar junction transistor coupled to a string of memory cells |
US8537609B2 (en) * | 2011-06-15 | 2013-09-17 | Macronix International Co., Ltd. | Memory device and method of operating the same |
US8953387B2 (en) | 2013-06-10 | 2015-02-10 | Micron Technology, Inc. | Apparatuses and methods for efficient write in a cross-point array |
US9312005B2 (en) | 2013-09-10 | 2016-04-12 | Micron Technology, Inc. | Accessing memory cells in parallel in a cross-point array |
US9324423B2 (en) | 2014-05-07 | 2016-04-26 | Micron Technology, Inc. | Apparatuses and methods for bi-directional access of cross-point arrays |
US10134457B1 (en) | 2017-08-31 | 2018-11-20 | Sandisk Technologies Llc | Cross-point spin accumulation torque MRAM |
CN111798911B (zh) * | 2020-07-10 | 2022-07-05 | 中国电子科技集团公司第二十四研究所 | 一种反熔丝存储器阵列的电压控制方法及电路 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3827034A (en) | 1972-09-14 | 1974-07-30 | Ferranti Ltd | Semiconductor information storage devices |
US4791611A (en) * | 1985-09-11 | 1988-12-13 | University Of Waterloo | VLSI dynamic memory |
US5166758A (en) | 1991-01-18 | 1992-11-24 | Energy Conversion Devices, Inc. | Electrically erasable phase change memory |
US5812441A (en) * | 1996-10-21 | 1998-09-22 | Micron Technology, Inc. | MOS diode for use in a non-volatile memory cell |
US6118691A (en) * | 1998-04-01 | 2000-09-12 | National Semiconductor Corporation | Memory cell with a Frohmann-Bentchkowsky EPROM memory transistor that reduces the voltage across an unprogrammed memory transistor during a read |
US6043527A (en) * | 1998-04-14 | 2000-03-28 | Micron Technology, Inc. | Circuits and methods for a memory cell with a trench plate trench capacitor and a vertical bipolar read device |
JPH11306795A (ja) * | 1998-04-22 | 1999-11-05 | Matsushita Electric Ind Co Ltd | 半導体メモリの試験方法および半導体メモリ |
KR100432442B1 (ko) * | 1999-02-22 | 2004-05-22 | 인피니언 테크놀로지스 아게 | 자기 증폭 다이내믹 메모리 셀을 갖춘 메모리 셀 어레이를동작시키기 위한 방법 |
US6646297B2 (en) | 2000-12-26 | 2003-11-11 | Ovonyx, Inc. | Lower electrode isolation in a double-wide trench |
US6462984B1 (en) * | 2001-06-29 | 2002-10-08 | Intel Corporation | Biasing scheme of floating unselected wordlines and bitlines of a diode-based memory array |
US6576921B2 (en) * | 2001-11-08 | 2003-06-10 | Intel Corporation | Isolating phase change material memory cells |
JP4228586B2 (ja) * | 2002-05-21 | 2009-02-25 | 富士電機デバイステクノロジー株式会社 | 半導体装置 |
US6813177B2 (en) * | 2002-12-13 | 2004-11-02 | Ovoynx, Inc. | Method and system to store information |
US7085153B2 (en) * | 2003-05-13 | 2006-08-01 | Innovative Silicon S.A. | Semiconductor memory cell, array, architecture and device, and method of operating same |
US6862216B1 (en) * | 2004-06-29 | 2005-03-01 | National Semiconductor Corporation | Non-volatile memory cell with gated diode and MOS transistor and method for using such cell |
-
2004
- 2004-09-22 EP EP04104595A patent/EP1640994B1/de active Active
- 2004-09-22 DE DE602004026447T patent/DE602004026447D1/de active Active
-
2005
- 2005-09-22 US US11/233,464 patent/US7483296B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP1640994B1 (de) | 2010-04-07 |
US7483296B2 (en) | 2009-01-27 |
EP1640994A1 (de) | 2006-03-29 |
US20060062051A1 (en) | 2006-03-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |