JP2017521849A - 高パワーエレクトロニクスのための可変バリアトランジスタ - Google Patents
高パワーエレクトロニクスのための可変バリアトランジスタ Download PDFInfo
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Abstract
Description
この出願は、2014年4月24日に出願され、シリアル番号61/983,779を有する、“TUNABLE BARRIER TRANSISTORS FOR HIGH POWER ELECTRONICS”と題された同時係属中の米国仮出願の優先権と恩恵を主張し、それはその全体がここに引用によって組み込まれる。
(連邦によりサポートされた研究または開発に関する言明)
この発明は、全米科学財団によって授けられたECCS-1232018合意の下での政府サポートでなされた。政府は、発明に或る種の権利を有する。
・グラフェンシートまたはカーボンナノチューブ膜のような低い状態密度の半金属からなる可変仕事関数ソース電極;
・半導電性材料へのアクセスをゲート電界に許容するためのソース電極膜のエンジニアード多孔性と電場透明性;
・アンゲーテッドソース電極と半導電性チャネルの間に形成されたショットキーバリア;
・コンタクトバリアに跨った抵抗を制御するためのソース電極と隣りの半導体をゲートする機構;
・高い通電容量と電場破壊の両方をもった無機半導電性チャネル(シリコン、またはGaN、SiC、AlNおよび/またはダイヤモンドを含むがそれらに限定はされないワイドバンドギャップ無機半導電性または半絶縁性材料);
・通常動作中に、ソースコンタクトが、ドレイン電極に対して逆方向バイアスされる、デバイスジオメトリー;
が含まれる。
Claims (20)
- 無機半導電性層と、
無機半導電性層の第1のサイドの一部上に配置されたナノカーボン膜からなるソース電極であって、ナノカーボン膜が、無機半導電性層とソース−チャネルインターフェースを形成しているものと、
ソース電極のナノカーボン膜上に配置されたゲート誘電体層と、
無機半導電性層の第1のサイドの一部上に配置されたソース電極のナノカーボン膜の少なくとも一部に渡ってゲート誘電体層上に配置されたゲート電極であって、ゲート電極によって作成されたゲート電界が、ソース−チャネルインターフェースにおけるバリアの高さを調節するものと、
を含む可変バリアトランジスタ。 - ゲート電極によって作成されたゲート電界は、ソース−チャネルインターフェースにおけるバリアの幅も調節する、請求項1の可変バリアトランジスタ。
- 無機半導電性層は、結晶質半導体からなる、請求項1の可変バリアトランジスタ。
- 結晶質半導体は、単結晶半導体である、請求項3の可変バリアトランジスタ。
- 無機半導電性層は、シリコン(Si)、ガリウム窒素(GaN)、炭化ケイ素(SiC)、窒化アルミニウム(AlN)、またはダイヤモンドからなる、請求項3の可変バリアトランジスタ。
- ソース電極のナノカーボン膜は、カーボンナノチューブの希薄なネットワークからなる、請求項1の可変バリアトランジスタ。
- カーボンナノチューブの希薄なネットワークは、質量で約0.05μg/cm2から約1.0μg/cm2の範囲のナノチューブ表面密度を有する、請求項6の可変バリアトランジスタ。
- ソース電極のナノカーボン膜は、穿孔をもったグラフェンのシートからなる、請求項1の可変バリアトランジスタ。
- ゲート誘電体は、高k誘電体からなる、請求項1の可変バリアトランジスタ。
- ゲート誘電体の厚さは、約100nm以下である、請求項9の可変バリアトランジスタ。
- ゲート誘電体は、25ボルトより上で誘電破壊を顕示する、請求項10の可変バリアトランジスタ。
- 第1のサイドとは反対の無機半導電性層の第2のサイド上に配置されたドレイン電極を更に含む、請求項1の可変バリアトランジスタ。
- 無機半導電性層の第1のサイドの一部上に配置された誘電体層と、
誘電体層上に配置されたソース電極のソースコンタクトと、
を更に含み、
ソース電極のナノカーボン膜は、ソースコンタクトに結合される、
請求項1の可変バリアトランジスタ。 - ゲート誘電体層は更に、ソースコンタクト上に配置される、請求項13の可変バリアトランジスタ。
- 無機半導電性層の第1のサイドの別の一部上に配置されたナノカーボン膜からなるドレイン電極であって、ドレイン電極はソース電極からある距離で分離されたものから更になり、
ゲート誘電体層は更に、ドレイン電極のナノカーボン膜上および、ソース電極とドレイン電極の間のチャネルの少なくとも一部上に配置され、
ゲート電極は更に、無機半導電性層の第1のサイドの他の部分上に配置されたドレイン電極のナノカーボン膜の少なくとも一部に渡ってゲート誘電体層上に配置される、
請求項1の可変バリアトランジスタ。 - ドレイン電極のナノカーボン膜は、カーボンナノチューブの希薄なネットワークからなる、請求項15の可変バリアトランジスタ。
- ドレイン電極のナノカーボン膜は、グラフェンのシートからなる、請求項15の可変バリアトランジスタ。
- 無機半導電性層の第1のサイドの一部上に配置された誘電体層と、
誘電体層上に配置されたドレイン電極のドレインコンタクトであって、ドレイン電極のナノカーボン膜が、ドレインコンタクトに結合されるものと、
を更に含む、請求項15の可変バリアトランジスタ。 - ゲート誘電体層は更に、ドレインコンタクト上に配置される、請求項18の可変バリアトランジスタ。
- 第1のサイドとは反対の無機半導電性層の第2のサイド上に配置されたバックゲート電極を更に含む、請求項15の可変バリアトランジスタ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US201461983779P | 2014-04-24 | 2014-04-24 | |
US61/983,779 | 2014-04-24 | ||
PCT/US2015/027525 WO2015164749A1 (en) | 2014-04-24 | 2015-04-24 | Tunable barrier transistors for high power electronics |
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JP2017521849A true JP2017521849A (ja) | 2017-08-03 |
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US (1) | US10553711B2 (ja) |
EP (1) | EP3134919B1 (ja) |
JP (1) | JP2017521849A (ja) |
KR (1) | KR102445520B1 (ja) |
CN (1) | CN106256023A (ja) |
WO (1) | WO2015164749A1 (ja) |
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US10535770B2 (en) * | 2014-09-24 | 2020-01-14 | Intel Corporation | Scaled TFET transistor formed using nanowire with surface termination |
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