JP2017092398A - ダイヤモンド電子素子 - Google Patents
ダイヤモンド電子素子 Download PDFInfo
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- JP2017092398A JP2017092398A JP2015224311A JP2015224311A JP2017092398A JP 2017092398 A JP2017092398 A JP 2017092398A JP 2015224311 A JP2015224311 A JP 2015224311A JP 2015224311 A JP2015224311 A JP 2015224311A JP 2017092398 A JP2017092398 A JP 2017092398A
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- doped
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 148
- 239000010432 diamond Substances 0.000 title claims abstract description 148
- 239000004065 semiconductor Substances 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 230000005669 field effect Effects 0.000 claims description 13
- 230000015556 catabolic process Effects 0.000 abstract description 8
- 238000003475 lamination Methods 0.000 abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 70
- 108091006146 Channels Proteins 0.000 description 42
- 229910052757 nitrogen Inorganic materials 0.000 description 35
- 239000001257 hydrogen Substances 0.000 description 34
- 229910052739 hydrogen Inorganic materials 0.000 description 34
- 238000000034 method Methods 0.000 description 32
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 28
- 239000002994 raw material Substances 0.000 description 23
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 22
- 238000010586 diagram Methods 0.000 description 17
- 238000005229 chemical vapour deposition Methods 0.000 description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 229910052799 carbon Inorganic materials 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 10
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 10
- 229910052796 boron Inorganic materials 0.000 description 10
- 238000001459 lithography Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 9
- 239000013078 crystal Substances 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 6
- 239000000969 carrier Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 6
- 238000009832 plasma treatment Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 229910002092 carbon dioxide Inorganic materials 0.000 description 5
- 239000001569 carbon dioxide Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910002091 carbon monoxide Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004047 hole gas Substances 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
本実施の形態を図1を参照して以下説明する。図1は、本実施の形態の、(001)面ウェハに形成した縦型構造MOSFET(ボディダイオードつき)の模式図である。
本実施の形態を図2を参照して以下説明する。図2は、本実施の形態の、(001)面ウェハに形成した擬似縦型構造MOSFET(ボディダイオードつき)の模式図である。
本実施の形態を図3を参照して以下説明する。図3は、本実施の形態の、(001)面ウェハに形成した縦型構造MESFET(ボディダイオードつき)の模式図である。
本実施の形態を図4を参照して以下説明する。図4は、本実施の形態の、(001)面ウェハに形成した擬似縦型構造MESFET(ボディダイオードつき)の模式図である。
本実施の形態を図5を参照して以下説明する。図5は、本実施の形態の、(110)面ウェハに形成した縦型構造MOSFET(ボディダイオードつき)の模式図である。
本実施の形態を図6を参照して以下説明する。図6は、本実施の形態の、(110)面ウェハに形成した擬似縦型構造MOSFET(ボディダイオードつき)の模式図である。
本実施の形態を図7を参照して以下説明する。図7は、本実施の形態の、(110)面ウェハに形成した縦型構造MESFET(ボディダイオードつき)の模式図である。
本実施の形態を図8を参照して以下説明する。図8は、本実施の形態の、(110)面ウェハに形成した擬似縦型構造MESFET(ボディダイオードつき)の模式図である。
本実施の形態を図9を参照して以下説明する。図9は、本実施の形態の、ボディダイオードなしの(001)面ウェハに形成した縦型構造MESFETの模式図である。
3、13 高品質ドリフト層
4、14 高抵抗層
5、15 コンタクト層
6 絶縁膜
7 ゲート電極
8 ソース電極
9 ドレイン電極
11 高品質ダイヤモンド半絶縁性基板
12 p+導電層
Claims (11)
- 少なくとも、ダイヤモンドからなるp+導電層、ダイヤモンドからなるp型ドリフト層、ダイヤモンドからなる高抵抗層、及びダイヤモンドからなるp+コンタクト層をこの順に備えるダイヤモンド積層構造を有することを特徴とするダイヤモンド電子素子。
- 半絶縁性基板上に前記p+導電層が積層されていることを特徴とする請求項1記載のダイヤモンド電子素子。
- 前記高抵抗層が窒素ドープダイヤモンドからなる層であることを特徴とする請求項1又は2記載のダイヤモンド電子素子。
- 前記ダイヤモンド積層構造において、トレンチ構造を備え、前記トレンチ構造の溝側壁が{111}面であることを特徴とする請求項1〜3のいずれか1項に記載のダイヤモンド電子素子。
- 前記{111}面の上にゲート電極を備えることを特徴とする請求項4記載のダイヤモンド電子素子。
- 前記ゲート電極が、金属・半導体接合のトランジスタ構造である、請求項5記載のダイヤモンド電子素子。
- 前記ゲート電極が、金属・絶縁膜・半導体接合のトランジスタ構造である、請求項5記載のダイヤモンド電子素子。
- 前記p+導電層に第1の電極、前記コンタクト層に第2の電極を備えることを特徴とする請求項1〜7のいずれか1項に記載のダイヤモンド電子素子。
- ダイヤモンド積層構造の窒素ドープダイヤモンド層の{111}面を正孔チャネルに用いることを特徴とする電界効果型トランジスタ。
- 窒素ドープダイヤモンドの{111}面に絶縁膜を介してゲート電極を設けて、金属・絶縁膜・半導体接合を形成し、前記{111}面を正孔チャネルに用いることを特徴とする電界効果型トランジスタ。
- 窒素ドープダイヤモンドの{111}面にp型層を介してゲート電極を設けて金属・半導体接合を形成し、前記{111}面を有するp型層をチャネルに用いることを特徴とする電界効果型トランジスタ。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015224311A JP6765651B2 (ja) | 2015-11-16 | 2015-11-16 | ダイヤモンド電子素子 |
PCT/JP2016/083564 WO2017086253A1 (ja) | 2015-11-16 | 2016-11-11 | ダイヤモンド電子素子 |
TW105137218A TWI726004B (zh) | 2015-11-16 | 2016-11-15 | 鑽石電子元件 |
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JP2015224311A JP6765651B2 (ja) | 2015-11-16 | 2015-11-16 | ダイヤモンド電子素子 |
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JP2017092398A true JP2017092398A (ja) | 2017-05-25 |
JP6765651B2 JP6765651B2 (ja) | 2020-10-07 |
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JP2015224311A Active JP6765651B2 (ja) | 2015-11-16 | 2015-11-16 | ダイヤモンド電子素子 |
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JP (1) | JP6765651B2 (ja) |
TW (1) | TWI726004B (ja) |
WO (1) | WO2017086253A1 (ja) |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0482275A (ja) * | 1990-01-31 | 1992-03-16 | Res Dev Corp Of Japan | 半導体デバイス及びその製造方法 |
JPH06177400A (ja) * | 1992-09-21 | 1994-06-24 | Kobe Steel Ltd | 二重ダイヤモンドメサ垂直型電界効果トランジスタ及びその製造方法 |
JPH0750419A (ja) * | 1993-05-14 | 1995-02-21 | Kobe Steel Ltd | ダイヤモンド電界効果トランジスタ |
JP2002057167A (ja) * | 2000-08-10 | 2002-02-22 | Kobe Steel Ltd | 半導体素子及びその製造方法 |
JP2002118257A (ja) * | 2000-10-06 | 2002-04-19 | Kobe Steel Ltd | ダイヤモンド半導体装置 |
JP2006100721A (ja) * | 2004-09-30 | 2006-04-13 | Kobe Steel Ltd | 半導体素子及びその製造方法 |
WO2007129610A1 (ja) * | 2006-05-10 | 2007-11-15 | National Institute Of Advanced Industrial Science And Technology | ダイヤモンド表面処理方法及びそのダイヤモンド薄膜を用いたデバイス |
JP2013222933A (ja) * | 2012-04-19 | 2013-10-28 | Toyota Central R&D Labs Inc | トランジスタおよび駆動回路 |
JP2015106650A (ja) * | 2013-11-29 | 2015-06-08 | 株式会社デンソー | 半導体装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7719080B2 (en) * | 2005-06-20 | 2010-05-18 | Teledyne Scientific & Imaging, Llc | Semiconductor device with a conduction enhancement layer |
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2015
- 2015-11-16 JP JP2015224311A patent/JP6765651B2/ja active Active
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2016
- 2016-11-11 WO PCT/JP2016/083564 patent/WO2017086253A1/ja active Application Filing
- 2016-11-15 TW TW105137218A patent/TWI726004B/zh active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0482275A (ja) * | 1990-01-31 | 1992-03-16 | Res Dev Corp Of Japan | 半導体デバイス及びその製造方法 |
JPH06177400A (ja) * | 1992-09-21 | 1994-06-24 | Kobe Steel Ltd | 二重ダイヤモンドメサ垂直型電界効果トランジスタ及びその製造方法 |
JPH0750419A (ja) * | 1993-05-14 | 1995-02-21 | Kobe Steel Ltd | ダイヤモンド電界効果トランジスタ |
JP2002057167A (ja) * | 2000-08-10 | 2002-02-22 | Kobe Steel Ltd | 半導体素子及びその製造方法 |
JP2002118257A (ja) * | 2000-10-06 | 2002-04-19 | Kobe Steel Ltd | ダイヤモンド半導体装置 |
JP2006100721A (ja) * | 2004-09-30 | 2006-04-13 | Kobe Steel Ltd | 半導体素子及びその製造方法 |
WO2007129610A1 (ja) * | 2006-05-10 | 2007-11-15 | National Institute Of Advanced Industrial Science And Technology | ダイヤモンド表面処理方法及びそのダイヤモンド薄膜を用いたデバイス |
JP2013222933A (ja) * | 2012-04-19 | 2013-10-28 | Toyota Central R&D Labs Inc | トランジスタおよび駆動回路 |
JP2015106650A (ja) * | 2013-11-29 | 2015-06-08 | 株式会社デンソー | 半導体装置 |
Also Published As
Publication number | Publication date |
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WO2017086253A1 (ja) | 2017-05-26 |
TWI726004B (zh) | 2021-05-01 |
TW201725734A (zh) | 2017-07-16 |
JP6765651B2 (ja) | 2020-10-07 |
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