TWI726004B - 鑽石電子元件 - Google Patents

鑽石電子元件 Download PDF

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Publication number
TWI726004B
TWI726004B TW105137218A TW105137218A TWI726004B TW I726004 B TWI726004 B TW I726004B TW 105137218 A TW105137218 A TW 105137218A TW 105137218 A TW105137218 A TW 105137218A TW I726004 B TWI726004 B TW I726004B
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TW
Taiwan
Prior art keywords
diamond
layer
nitrogen
doped
plane
Prior art date
Application number
TW105137218A
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English (en)
Chinese (zh)
Other versions
TW201725734A (zh
Inventor
梅澤仁
大曲新矢
杢野由明
德田規夫
中西一浩
黑島裕貴
長井雅嗣
Original Assignee
國立研究開發法人產業技術總合研究所
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Application filed by 國立研究開發法人產業技術總合研究所 filed Critical 國立研究開發法人產業技術總合研究所
Publication of TW201725734A publication Critical patent/TW201725734A/zh
Application granted granted Critical
Publication of TWI726004B publication Critical patent/TWI726004B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
TW105137218A 2015-11-16 2016-11-15 鑽石電子元件 TWI726004B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015224311A JP6765651B2 (ja) 2015-11-16 2015-11-16 ダイヤモンド電子素子
JP2015-224311 2015-11-16

Publications (2)

Publication Number Publication Date
TW201725734A TW201725734A (zh) 2017-07-16
TWI726004B true TWI726004B (zh) 2021-05-01

Family

ID=58718938

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105137218A TWI726004B (zh) 2015-11-16 2016-11-15 鑽石電子元件

Country Status (3)

Country Link
JP (1) JP6765651B2 (ja)
TW (1) TWI726004B (ja)
WO (1) WO2017086253A1 (ja)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5296403A (en) * 1990-01-31 1994-03-22 Research Development Corp. Of Japan Method of manufacturing a static induction field-effect transistor
JP2002057167A (ja) * 2000-08-10 2002-02-22 Kobe Steel Ltd 半導体素子及びその製造方法
TW200715555A (en) * 2005-06-20 2007-04-16 Rockwell Scient Licensing Llc Semiconductor device with a conduction enhancement layer
JP2015106650A (ja) * 2013-11-29 2015-06-08 株式会社デンソー 半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5391895A (en) * 1992-09-21 1995-02-21 Kobe Steel Usa, Inc. Double diamond mesa vertical field effect transistor
US5371383A (en) * 1993-05-14 1994-12-06 Kobe Steel Usa Inc. Highly oriented diamond film field-effect transistor
JP2002118257A (ja) * 2000-10-06 2002-04-19 Kobe Steel Ltd ダイヤモンド半導体装置
JP2006100721A (ja) * 2004-09-30 2006-04-13 Kobe Steel Ltd 半導体素子及びその製造方法
WO2007129610A1 (ja) * 2006-05-10 2007-11-15 National Institute Of Advanced Industrial Science And Technology ダイヤモンド表面処理方法及びそのダイヤモンド薄膜を用いたデバイス
JP5906914B2 (ja) * 2012-04-19 2016-04-20 株式会社豊田中央研究所 トランジスタの駆動回路

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5296403A (en) * 1990-01-31 1994-03-22 Research Development Corp. Of Japan Method of manufacturing a static induction field-effect transistor
JP2002057167A (ja) * 2000-08-10 2002-02-22 Kobe Steel Ltd 半導体素子及びその製造方法
TW200715555A (en) * 2005-06-20 2007-04-16 Rockwell Scient Licensing Llc Semiconductor device with a conduction enhancement layer
JP2015106650A (ja) * 2013-11-29 2015-06-08 株式会社デンソー 半導体装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP平4－82275;JP特開平－7-50419; *

Also Published As

Publication number Publication date
WO2017086253A1 (ja) 2017-05-26
TW201725734A (zh) 2017-07-16
JP6765651B2 (ja) 2020-10-07
JP2017092398A (ja) 2017-05-25

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