JP2017519430A - Ａｃ等電位ノードを維持するためのフィルタを有するトランジスタベーススイッチスタック - Google Patents

Ａｃ等電位ノードを維持するためのフィルタを有するトランジスタベーススイッチスタック Download PDF

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JP2017519430A
JP2017519430A JP2016568642A JP2016568642A JP2017519430A JP 2017519430 A JP2017519430 A JP 2017519430A JP 2016568642 A JP2016568642 A JP 2016568642A JP 2016568642 A JP2016568642 A JP 2016568642A JP 2017519430 A JP2017519430 A JP 2017519430A
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Japan
Prior art keywords
node
bias network
gate
unit cell
circuit
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Ceased
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JP2016568642A
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Japanese (ja)
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JP2017519430A5 (enExample
Inventor
デ・ジョン、モーリス・エイドリアヌス
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Qualcomm Inc
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Qualcomm Inc
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Publication of JP2017519430A publication Critical patent/JP2017519430A/ja
Publication of JP2017519430A5 publication Critical patent/JP2017519430A5/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0054—Gating switches, e.g. pass gates

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  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Electronic Switches (AREA)
  • Networks Using Active Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
JP2016568642A 2014-05-20 2015-05-14 Ａｃ等電位ノードを維持するためのフィルタを有するトランジスタベーススイッチスタック Ceased JP2017519430A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/281,965 US9438223B2 (en) 2014-05-20 2014-05-20 Transistor based switch stack having filters for preserving AC equipotential nodes
US14/281,965 2014-05-20
PCT/US2015/030737 WO2015179201A1 (en) 2014-05-20 2015-05-14 Transistor-based switch stack having filters for preserving ac equipotential nodes

Publications (2)

Publication Number Publication Date
JP2017519430A true JP2017519430A (ja) 2017-07-13
JP2017519430A5 JP2017519430A5 (enExample) 2018-06-14

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ID=53267664

Family Applications (1)

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JP2016568642A Ceased JP2017519430A (ja) 2014-05-20 2015-05-14 Ａｃ等電位ノードを維持するためのフィルタを有するトランジスタベーススイッチスタック

Country Status (5)

Country Link
US (1) US9438223B2 (enExample)
EP (1) EP3146631B1 (enExample)
JP (1) JP2017519430A (enExample)
CN (1) CN106464246B (enExample)
WO (1) WO2015179201A1 (enExample)

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JP2020513689A (ja) * 2016-11-24 2020-05-14 ヴィジック テクノロジーズ リミテッド 高電圧および高電流スイッチング用の電源デバイス
KR20200144264A (ko) * 2019-06-18 2020-12-29 삼성전기주식회사 균등 전압 분배 기능을 갖는 고주파 스위치

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US7890891B2 (en) 2005-07-11 2011-02-15 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US7910993B2 (en) 2005-07-11 2011-03-22 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
US9653601B2 (en) 2005-07-11 2017-05-16 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US20080076371A1 (en) * 2005-07-11 2008-03-27 Alexander Dribinsky Circuit and method for controlling charge injection in radio frequency switches
KR101670167B1 (ko) * 2015-03-25 2016-10-27 삼성전기주식회사 고주파 스위치 회로
US9742400B2 (en) * 2015-05-06 2017-08-22 Infineon Technologies Ag System and method for driving radio frequency switch
US10056901B2 (en) * 2016-02-11 2018-08-21 Skyworks Solutions, Inc. Impedance control in radio-frequency switches
EP3297161B1 (en) * 2016-09-15 2019-08-21 Visic Technologies Ltd. Power device for high voltage and high current switching
US10498329B2 (en) * 2016-09-26 2019-12-03 Skyworks Solutions, Inc. Parallel main-auxiliary field-effect transistor configurations for radio frequency applications
KR101901699B1 (ko) * 2016-10-05 2018-09-28 삼성전기 주식회사 고조파 억제특성을 개선한 안테나 스위치 회로
US10050609B2 (en) * 2016-10-05 2018-08-14 Samsung Electro-Mechanics Co., Ltd. Antenna switch circuit with improved harmonic suppression characteristic
US10181478B2 (en) 2017-01-06 2019-01-15 Qorvo Us, Inc. Radio frequency switch having field effect transistor cells
KR101912289B1 (ko) * 2017-06-28 2018-10-29 삼성전기 주식회사 고조파 감쇠특성을 개선한 고주파 스위치 장치
CN108111155B (zh) * 2017-11-30 2021-05-25 上海华虹宏力半导体制造有限公司 一种改善非线性的射频开关电路
US10326018B1 (en) 2018-02-28 2019-06-18 Nxp Usa, Inc. RF switches, integrated circuits, and devices with multi-gate field effect transistors and voltage leveling circuits, and methods of their fabrication
US10277222B1 (en) * 2018-02-28 2019-04-30 Qorvo Us, Inc. Radio frequency switch
US10505530B2 (en) 2018-03-28 2019-12-10 Psemi Corporation Positive logic switch with selectable DC blocking circuit
US10886911B2 (en) * 2018-03-28 2021-01-05 Psemi Corporation Stacked FET switch bias ladders
US10236872B1 (en) 2018-03-28 2019-03-19 Psemi Corporation AC coupling modules for bias ladders
US10263616B1 (en) 2018-03-29 2019-04-16 Qorvo Us, Inc. Radio frequency switch
US10659031B2 (en) 2018-07-30 2020-05-19 Qorvo Us, Inc. Radio frequency switch
US10523195B1 (en) 2018-08-02 2019-12-31 Psemi Corporation Mixed style bias network for RF switch FET stacks
US10530357B1 (en) * 2018-11-12 2020-01-07 Newport Fab, Llc Dynamic impedance circuit for uniform voltage distribution in a high power switch branch
CN113544974B (zh) * 2018-12-20 2023-06-06 唯捷创芯(天津)电子技术股份有限公司 射频开关电路、芯片及通信终端
US10784862B1 (en) 2019-09-10 2020-09-22 Nxp Usa, Inc. High speed switching radio frequency switches
US10972091B1 (en) * 2019-12-03 2021-04-06 Nxp Usa, Inc. Radio frequency switches with voltage equalization
US11296688B2 (en) 2019-12-18 2022-04-05 Skyworks Solutions, Inc. Switching time reduction of an RF switch
US11476849B2 (en) 2020-01-06 2022-10-18 Psemi Corporation High power positive logic switch
US11569812B2 (en) * 2020-06-15 2023-01-31 Psemi Corporation RF switch stack with charge control elements
US11368180B2 (en) 2020-07-31 2022-06-21 Nxp Usa, Inc. Switch circuits with parallel transistor stacks and methods of their operation
US11463087B2 (en) * 2020-07-31 2022-10-04 Psemi Corporation Methods and devices to generate gate induced drain leakage current sink or source path for switch FETs
US11671090B2 (en) 2020-07-31 2023-06-06 Psemi Corporation Switch FET body current management devices and methods
US12395171B2 (en) 2020-07-31 2025-08-19 Nxp Usa, Inc. Switch circuits with parallel transistor stacks and capacitor networks for balancing off-state RF voltages, and methods of their operation
US11601126B2 (en) 2020-12-11 2023-03-07 Psemi Corporation RF switch stack with charge redistribution
US11683028B2 (en) * 2021-03-03 2023-06-20 Nxp Usa, Inc. Radio frequency switches with voltage equalization
US12160229B2 (en) 2021-12-28 2024-12-03 Skyworks Solutions, Inc. Switching time reduction of an RF switch
US12199594B2 (en) 2022-01-06 2025-01-14 Skyworks Solutions, Inc. Switching time reduction of an RF switch
US11923838B2 (en) 2022-06-17 2024-03-05 Psemi Corporation Inductive drain and/or body ladders in RF switch stacks
US12155381B2 (en) 2022-08-22 2024-11-26 Qualcomm Incorporated Dynamic body biasing for radio frequency (RF) switch
US12206400B2 (en) 2022-08-22 2025-01-21 Qualcomm Incorporated Dynamic body biasing for radio frequency (RF) switch
EP4380053B1 (en) * 2022-11-30 2025-08-06 NXP USA, Inc. A high voltage switch
US12355431B2 (en) 2023-01-24 2025-07-08 Globalfoundries U.S. Inc. Switch with back gate-connected compensation capacitors
EP4659356A1 (en) * 2023-02-01 2025-12-10 Qualcomm Incorporated Dynamic body biasing for radio frequency (rf) switch

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Publication number Priority date Publication date Assignee Title
JP2020513689A (ja) * 2016-11-24 2020-05-14 ヴィジック テクノロジーズ リミテッド 高電圧および高電流スイッチング用の電源デバイス
KR20200144264A (ko) * 2019-06-18 2020-12-29 삼성전기주식회사 균등 전압 분배 기능을 갖는 고주파 스위치
KR102636848B1 (ko) 2019-06-18 2024-02-14 삼성전기주식회사 균등 전압 분배 기능을 갖는 고주파 스위치

Also Published As

Publication number Publication date
EP3146631B1 (en) 2019-07-31
US20150341026A1 (en) 2015-11-26
EP3146631A1 (en) 2017-03-29
CN106464246A (zh) 2017-02-22
WO2015179201A1 (en) 2015-11-26
CN106464246B (zh) 2019-05-07
US9438223B2 (en) 2016-09-06

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