CN106464246B - 具有用于保留ac等电位节点的滤波器的基于晶体管的开关堆叠 - Google Patents
具有用于保留ac等电位节点的滤波器的基于晶体管的开关堆叠 Download PDFInfo
- Publication number
- CN106464246B CN106464246B CN201580026492.4A CN201580026492A CN106464246B CN 106464246 B CN106464246 B CN 106464246B CN 201580026492 A CN201580026492 A CN 201580026492A CN 106464246 B CN106464246 B CN 106464246B
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- China
- Prior art keywords
- fet
- node
- bias network
- unit cell
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/012—Modifications of generator to improve response time or to decrease power consumption
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
- H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0018—Special modifications or use of the back gate voltage of a FET
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0054—Gating switches, e.g. pass gates
Landscapes
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Electronic Switches (AREA)
- Networks Using Active Elements (AREA)
- Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/281,965 US9438223B2 (en) | 2014-05-20 | 2014-05-20 | Transistor based switch stack having filters for preserving AC equipotential nodes |
| US14/281,965 | 2014-05-20 | ||
| PCT/US2015/030737 WO2015179201A1 (en) | 2014-05-20 | 2015-05-14 | Transistor-based switch stack having filters for preserving ac equipotential nodes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106464246A CN106464246A (zh) | 2017-02-22 |
| CN106464246B true CN106464246B (zh) | 2019-05-07 |
Family
ID=53267664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580026492.4A Active CN106464246B (zh) | 2014-05-20 | 2015-05-14 | 具有用于保留ac等电位节点的滤波器的基于晶体管的开关堆叠 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9438223B2 (enExample) |
| EP (1) | EP3146631B1 (enExample) |
| JP (1) | JP2017519430A (enExample) |
| CN (1) | CN106464246B (enExample) |
| WO (1) | WO2015179201A1 (enExample) |
Families Citing this family (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6804502B2 (en) | 2001-10-10 | 2004-10-12 | Peregrine Semiconductor Corporation | Switch circuit and method of switching radio frequency signals |
| JP4659826B2 (ja) | 2004-06-23 | 2011-03-30 | ペレグリン セミコンダクター コーポレーション | Rfフロントエンド集積回路 |
| USRE48965E1 (en) | 2005-07-11 | 2022-03-08 | Psemi Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
| US7890891B2 (en) | 2005-07-11 | 2011-02-15 | Peregrine Semiconductor Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
| US7910993B2 (en) | 2005-07-11 | 2011-03-22 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink |
| US9653601B2 (en) | 2005-07-11 | 2017-05-16 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
| US20080076371A1 (en) * | 2005-07-11 | 2008-03-27 | Alexander Dribinsky | Circuit and method for controlling charge injection in radio frequency switches |
| KR101670167B1 (ko) * | 2015-03-25 | 2016-10-27 | 삼성전기주식회사 | 고주파 스위치 회로 |
| US9742400B2 (en) * | 2015-05-06 | 2017-08-22 | Infineon Technologies Ag | System and method for driving radio frequency switch |
| US10056901B2 (en) * | 2016-02-11 | 2018-08-21 | Skyworks Solutions, Inc. | Impedance control in radio-frequency switches |
| EP3297161B1 (en) * | 2016-09-15 | 2019-08-21 | Visic Technologies Ltd. | Power device for high voltage and high current switching |
| US10498329B2 (en) * | 2016-09-26 | 2019-12-03 | Skyworks Solutions, Inc. | Parallel main-auxiliary field-effect transistor configurations for radio frequency applications |
| KR101901699B1 (ko) * | 2016-10-05 | 2018-09-28 | 삼성전기 주식회사 | 고조파 억제특성을 개선한 안테나 스위치 회로 |
| US10050609B2 (en) * | 2016-10-05 | 2018-08-14 | Samsung Electro-Mechanics Co., Ltd. | Antenna switch circuit with improved harmonic suppression characteristic |
| JP6815509B2 (ja) * | 2016-11-24 | 2021-01-20 | ヴィジック テクノロジーズ リミテッド | 高電圧および高電流スイッチング用の電源デバイス |
| US10181478B2 (en) | 2017-01-06 | 2019-01-15 | Qorvo Us, Inc. | Radio frequency switch having field effect transistor cells |
| KR101912289B1 (ko) * | 2017-06-28 | 2018-10-29 | 삼성전기 주식회사 | 고조파 감쇠특성을 개선한 고주파 스위치 장치 |
| CN108111155B (zh) * | 2017-11-30 | 2021-05-25 | 上海华虹宏力半导体制造有限公司 | 一种改善非线性的射频开关电路 |
| US10326018B1 (en) | 2018-02-28 | 2019-06-18 | Nxp Usa, Inc. | RF switches, integrated circuits, and devices with multi-gate field effect transistors and voltage leveling circuits, and methods of their fabrication |
| US10277222B1 (en) * | 2018-02-28 | 2019-04-30 | Qorvo Us, Inc. | Radio frequency switch |
| US10505530B2 (en) | 2018-03-28 | 2019-12-10 | Psemi Corporation | Positive logic switch with selectable DC blocking circuit |
| US10886911B2 (en) * | 2018-03-28 | 2021-01-05 | Psemi Corporation | Stacked FET switch bias ladders |
| US10236872B1 (en) | 2018-03-28 | 2019-03-19 | Psemi Corporation | AC coupling modules for bias ladders |
| US10263616B1 (en) | 2018-03-29 | 2019-04-16 | Qorvo Us, Inc. | Radio frequency switch |
| US10659031B2 (en) | 2018-07-30 | 2020-05-19 | Qorvo Us, Inc. | Radio frequency switch |
| US10523195B1 (en) | 2018-08-02 | 2019-12-31 | Psemi Corporation | Mixed style bias network for RF switch FET stacks |
| US10530357B1 (en) * | 2018-11-12 | 2020-01-07 | Newport Fab, Llc | Dynamic impedance circuit for uniform voltage distribution in a high power switch branch |
| CN113544974B (zh) * | 2018-12-20 | 2023-06-06 | 唯捷创芯(天津)电子技术股份有限公司 | 射频开关电路、芯片及通信终端 |
| KR102636848B1 (ko) * | 2019-06-18 | 2024-02-14 | 삼성전기주식회사 | 균등 전압 분배 기능을 갖는 고주파 스위치 |
| US10784862B1 (en) | 2019-09-10 | 2020-09-22 | Nxp Usa, Inc. | High speed switching radio frequency switches |
| US10972091B1 (en) * | 2019-12-03 | 2021-04-06 | Nxp Usa, Inc. | Radio frequency switches with voltage equalization |
| US11296688B2 (en) | 2019-12-18 | 2022-04-05 | Skyworks Solutions, Inc. | Switching time reduction of an RF switch |
| US11476849B2 (en) | 2020-01-06 | 2022-10-18 | Psemi Corporation | High power positive logic switch |
| US11569812B2 (en) * | 2020-06-15 | 2023-01-31 | Psemi Corporation | RF switch stack with charge control elements |
| US11368180B2 (en) | 2020-07-31 | 2022-06-21 | Nxp Usa, Inc. | Switch circuits with parallel transistor stacks and methods of their operation |
| US11463087B2 (en) * | 2020-07-31 | 2022-10-04 | Psemi Corporation | Methods and devices to generate gate induced drain leakage current sink or source path for switch FETs |
| US11671090B2 (en) | 2020-07-31 | 2023-06-06 | Psemi Corporation | Switch FET body current management devices and methods |
| US12395171B2 (en) | 2020-07-31 | 2025-08-19 | Nxp Usa, Inc. | Switch circuits with parallel transistor stacks and capacitor networks for balancing off-state RF voltages, and methods of their operation |
| US11601126B2 (en) | 2020-12-11 | 2023-03-07 | Psemi Corporation | RF switch stack with charge redistribution |
| US11683028B2 (en) * | 2021-03-03 | 2023-06-20 | Nxp Usa, Inc. | Radio frequency switches with voltage equalization |
| US12160229B2 (en) | 2021-12-28 | 2024-12-03 | Skyworks Solutions, Inc. | Switching time reduction of an RF switch |
| US12199594B2 (en) | 2022-01-06 | 2025-01-14 | Skyworks Solutions, Inc. | Switching time reduction of an RF switch |
| US11923838B2 (en) | 2022-06-17 | 2024-03-05 | Psemi Corporation | Inductive drain and/or body ladders in RF switch stacks |
| US12155381B2 (en) | 2022-08-22 | 2024-11-26 | Qualcomm Incorporated | Dynamic body biasing for radio frequency (RF) switch |
| US12206400B2 (en) | 2022-08-22 | 2025-01-21 | Qualcomm Incorporated | Dynamic body biasing for radio frequency (RF) switch |
| EP4380053B1 (en) * | 2022-11-30 | 2025-08-06 | NXP USA, Inc. | A high voltage switch |
| US12355431B2 (en) | 2023-01-24 | 2025-07-08 | Globalfoundries U.S. Inc. | Switch with back gate-connected compensation capacitors |
| EP4659356A1 (en) * | 2023-02-01 | 2025-12-10 | Qualcomm Incorporated | Dynamic body biasing for radio frequency (rf) switch |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102088282A (zh) * | 2009-12-03 | 2011-06-08 | Nxp股份有限公司 | 具有开关本体伪单元的开关本体pmos开关 |
| US8008988B1 (en) * | 2008-02-20 | 2011-08-30 | Triquint Semiconductor, Inc. | Radio frequency switch with improved intermodulation distortion through use of feed forward capacitor |
| JP5348239B2 (ja) * | 2009-02-25 | 2013-11-20 | 日本電気株式会社 | 高周波スイッチ回路 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6300835B1 (en) * | 1999-12-10 | 2001-10-09 | Motorola, Inc. | Power amplifier core |
| US6730953B2 (en) | 2002-09-13 | 2004-05-04 | Mia-Com, Inc. | Apparatus, methods and articles of manufacture for a low control voltage switch |
| US20040228056A1 (en) * | 2003-05-15 | 2004-11-18 | Vice Michael W. | Switching circuit with equity voltage division |
| JP4659826B2 (ja) | 2004-06-23 | 2011-03-30 | ペレグリン セミコンダクター コーポレーション | Rfフロントエンド集積回路 |
| US8081928B2 (en) | 2005-02-03 | 2011-12-20 | Peregrine Semiconductor Corporation | Canceling harmonics in semiconductor RF switches |
| US7910993B2 (en) | 2005-07-11 | 2011-03-22 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink |
| US7960772B2 (en) | 2007-04-26 | 2011-06-14 | Peregrine Semiconductor Corporation | Tuning capacitance to enhance FET stack voltage withstand |
| EP2760136B1 (en) | 2008-02-28 | 2018-05-09 | Peregrine Semiconductor Corporation | Method and apparatus for use in digitally tuning a capacitor in an integrated circuit device |
| US8395435B2 (en) | 2009-07-30 | 2013-03-12 | Qualcomm, Incorporated | Switches with bias resistors for even voltage distribution |
| US8461903B1 (en) | 2009-09-11 | 2013-06-11 | Rf Micro Devices, Inc. | SOI switch enhancement |
| WO2011045442A2 (en) * | 2009-10-16 | 2011-04-21 | Ferfics Limited | Switching system and method |
| TWI623143B (zh) | 2012-07-07 | 2018-05-01 | Skyworks Solutions, Inc. | 與基於射頻開關之絕緣體上矽相關之電路、裝置、方法及其組合 |
| US9160328B2 (en) | 2012-07-07 | 2015-10-13 | Skyworks Solutions, Inc. | Circuits, devices, methods and applications related to silicon-on-insulator based radio-frequency switches |
| US20140009213A1 (en) * | 2012-07-07 | 2014-01-09 | Skyworks Solutions, Inc. | Body-gate coupling to reduce distortion in radio-frequency switch |
| JP5996378B2 (ja) * | 2012-11-01 | 2016-09-21 | ルネサスエレクトロニクス株式会社 | 高周波スイッチ回路 |
| WO2014202137A1 (en) | 2013-06-19 | 2014-12-24 | Qualcomm Technologies, Inc. | Switchable capacitor array and method for driving a switchable capacitor array |
-
2014
- 2014-05-20 US US14/281,965 patent/US9438223B2/en active Active
-
2015
- 2015-05-14 WO PCT/US2015/030737 patent/WO2015179201A1/en not_active Ceased
- 2015-05-14 CN CN201580026492.4A patent/CN106464246B/zh active Active
- 2015-05-14 JP JP2016568642A patent/JP2017519430A/ja not_active Ceased
- 2015-05-14 EP EP15724919.4A patent/EP3146631B1/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8008988B1 (en) * | 2008-02-20 | 2011-08-30 | Triquint Semiconductor, Inc. | Radio frequency switch with improved intermodulation distortion through use of feed forward capacitor |
| JP5348239B2 (ja) * | 2009-02-25 | 2013-11-20 | 日本電気株式会社 | 高周波スイッチ回路 |
| CN102088282A (zh) * | 2009-12-03 | 2011-06-08 | Nxp股份有限公司 | 具有开关本体伪单元的开关本体pmos开关 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2017519430A (ja) | 2017-07-13 |
| EP3146631B1 (en) | 2019-07-31 |
| US20150341026A1 (en) | 2015-11-26 |
| EP3146631A1 (en) | 2017-03-29 |
| CN106464246A (zh) | 2017-02-22 |
| WO2015179201A1 (en) | 2015-11-26 |
| US9438223B2 (en) | 2016-09-06 |
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Legal Events
| Date | Code | Title | Description |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |