JP2017517759A5 - - Google Patents
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- JP2017517759A5 JP2017517759A5 JP2016559363A JP2016559363A JP2017517759A5 JP 2017517759 A5 JP2017517759 A5 JP 2017517759A5 JP 2016559363 A JP2016559363 A JP 2016559363A JP 2016559363 A JP2016559363 A JP 2016559363A JP 2017517759 A5 JP2017517759 A5 JP 2017517759A5
- Authority
- JP
- Japan
- Prior art keywords
- contour
- dimensional
- laser pulse
- wafer
- surface shape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005259 measurement Methods 0.000 description 18
- 230000003287 optical effect Effects 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- 239000000758 substrate Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461970289P | 2014-03-25 | 2014-03-25 | |
| US61/970,289 | 2014-03-25 | ||
| PCT/EP2015/056250 WO2015144700A2 (en) | 2014-03-25 | 2015-03-24 | Method and apparatus for generating a predetermined three-dimensional contour of an optical component and/or a wafer |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017517759A JP2017517759A (ja) | 2017-06-29 |
| JP2017517759A5 true JP2017517759A5 (enExample) | 2018-06-14 |
| JP6554483B2 JP6554483B2 (ja) | 2019-07-31 |
Family
ID=53724226
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016559363A Active JP6554483B2 (ja) | 2014-03-25 | 2015-03-24 | 光学構成要素及び／又はウェーハの予め決められた３次元輪郭を発生させる方法及び装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10353295B2 (enExample) |
| JP (1) | JP6554483B2 (enExample) |
| KR (1) | KR101913020B1 (enExample) |
| WO (1) | WO2015144700A2 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106796899B (zh) * | 2014-05-29 | 2019-11-05 | 布朗大学 | 用于确定衬底中的应力的光学系统和方法 |
| WO2017202665A1 (en) * | 2016-05-25 | 2017-11-30 | Asml Netherlands B.V. | Focus and overlay improvement by modifying a patterning device |
| DE102016224690B4 (de) | 2016-12-12 | 2020-07-23 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum Untersuchen eines Elements einer photolithographischen Maske für den EUV-Bereich |
| DE102017205629B4 (de) | 2017-04-03 | 2024-10-31 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum Reparieren von Defekten einer photolithographischen Maske für den EUV-Bereich |
| DE102017215995B4 (de) * | 2017-09-11 | 2021-05-12 | Carl Zeiss Smt Gmbh | Verfahren zur Untersuchung von photolithographischen Masken |
| EP3486721A1 (en) * | 2017-11-17 | 2019-05-22 | IMEC vzw | Mask for extreme-uv lithography and method for manufacturing the same |
| US12322599B2 (en) | 2018-06-12 | 2025-06-03 | Tokyo Electron Limited | Substrate processing method, modification device and substrate processing system |
| DE102019201497B3 (de) * | 2019-02-06 | 2020-06-18 | Carl Zeiss Smt Gmbh | Vorrichtung und Verfahren zum Bestimmen von Platzierungen von Pattern-Elementen einer reflektiven fotolithographischen Maske in deren Betriebsumgebung |
| CN109859137B (zh) * | 2019-02-14 | 2023-02-17 | 重庆邮电大学 | 一种广角相机非规则畸变全域校正方法 |
| US11393118B2 (en) * | 2019-06-18 | 2022-07-19 | Kla Corporation | Metrics for asymmetric wafer shape characterization |
| KR102705854B1 (ko) | 2019-07-23 | 2024-09-11 | 에스케이하이닉스 주식회사 | 반도체 소자의 분석 시스템 및 방법 |
| KR20210094835A (ko) | 2020-01-22 | 2021-07-30 | 삼성전자주식회사 | 레이저 빔을 이용하여 반사형 포토마스크를 어닐링하는 방법 |
| DE102020201482B4 (de) | 2020-02-06 | 2024-06-27 | Carl Zeiss Smt Gmbh | Vorrichtung und Verfahren zum Reparieren eines Defekts einer optischen Komponente für den extrem ultravioletten Wellenlängenbereich |
| JP7574767B2 (ja) * | 2020-10-30 | 2024-10-29 | Ａｇｃ株式会社 | Ｅｕｖｌ用ガラス基板、及びｅｕｖｌ用マスクブランク |
| JP7574766B2 (ja) * | 2020-10-30 | 2024-10-29 | Ａｇｃ株式会社 | Ｅｕｖｌ用ガラス基板、及びｅｕｖｌ用マスクブランク |
| EP4302156A1 (en) | 2021-03-01 | 2024-01-10 | Carl Zeiss SMS Ltd. | Method and apparatus for optimizing a defect correction for an optical element used in a lithographic process |
| US20220336226A1 (en) * | 2021-04-15 | 2022-10-20 | Tokyo Electron Limited | Method of correcting wafer bow using a direct write stress film |
| KR20240036734A (ko) * | 2021-08-27 | 2024-03-20 | 에이지씨 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 |
| US11852978B2 (en) * | 2022-03-07 | 2023-12-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | EUV lithography system with 3D sensing and tunning modules |
| JP7694474B2 (ja) * | 2022-06-23 | 2025-06-18 | 信越化学工業株式会社 | マスクブランクス用基板及びその製造方法 |
| EP4418304A1 (en) | 2023-02-17 | 2024-08-21 | Carl Zeiss SMS Ltd. | Wafer conditioning |
| EP4471499A1 (en) | 2023-06-02 | 2024-12-04 | Carl Zeiss SMS Ltd. | Ml reflectivity modification |
| CN117878018A (zh) * | 2024-01-12 | 2024-04-12 | 西安奕斯伟材料科技股份有限公司 | 一种调节工艺参数的方法、装置及介质 |
| DE102024102631A1 (de) * | 2024-01-30 | 2025-07-31 | TRUMPF Lasersystems for Semiconductor Manufacturing SE | Verfahren und laserbearbeitungsanlage zur laserbasierten oberflächenformkorrektur eines spiegels |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100735532B1 (ko) * | 2006-03-21 | 2007-07-04 | 삼성전자주식회사 | 기판 내에 팽창부를 포함하는 포토마스크 및 포토마스크의표면 평탄화 방법 |
| KR100791338B1 (ko) | 2006-08-07 | 2008-01-03 | 삼성전자주식회사 | 레지스트레이션이 보정된 포토마스크 및 포토마스크의레지스트레이션 보정 방법 |
| JP2008096741A (ja) * | 2006-10-12 | 2008-04-24 | Toshiba Corp | マスク、マスクの製造方法及び半導体装置の製造方法 |
| JP4909913B2 (ja) * | 2008-01-10 | 2012-04-04 | 株式会社東芝 | インプリントマスクの製造方法および半導体装置の製造方法 |
| JP2010044287A (ja) * | 2008-08-15 | 2010-02-25 | Renesas Technology Corp | フォトマスクの製造方法 |
| US8735030B2 (en) * | 2010-04-15 | 2014-05-27 | Carl Zeiss Smt Gmbh | Method and apparatus for modifying a substrate surface of a photolithographic mask |
| DE102011078927B4 (de) * | 2010-07-12 | 2019-01-31 | Carl Zeiss Sms Ltd. | Verfahren zum Korrigieren von Fehlern einer photolithographischen Maske |
| DE102011083774B4 (de) * | 2010-10-04 | 2019-06-13 | Carl Zeiss Sms Ltd. | Verfahren zum Bestimmen von Laser korrigierenden Tool-Parametern |
| WO2012103933A1 (en) * | 2011-02-01 | 2012-08-09 | Carl Zeiss Smt Gmbh | Method and apparatus for correcting errors in an euv lithography system |
| KR101656588B1 (ko) * | 2011-08-26 | 2016-09-09 | 칼 짜이스 에스엠에스 엘티디 | 포토리소그래피용 광학 소자를 국부적으로 변형하기 위한 방법 및 장치 |
-
2015
- 2015-03-24 WO PCT/EP2015/056250 patent/WO2015144700A2/en not_active Ceased
- 2015-03-24 KR KR1020167028830A patent/KR101913020B1/ko active Active
- 2015-03-24 JP JP2016559363A patent/JP6554483B2/ja active Active
-
2016
- 2016-09-22 US US15/272,936 patent/US10353295B2/en active Active
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