JP6554483B2 - 光学構成要素及び/又はウェーハの予め決められた3次元輪郭を発生させる方法及び装置 - Google Patents
光学構成要素及び/又はウェーハの予め決められた3次元輪郭を発生させる方法及び装置 Download PDFInfo
- Publication number
- JP6554483B2 JP6554483B2 JP2016559363A JP2016559363A JP6554483B2 JP 6554483 B2 JP6554483 B2 JP 6554483B2 JP 2016559363 A JP2016559363 A JP 2016559363A JP 2016559363 A JP2016559363 A JP 2016559363A JP 6554483 B2 JP6554483 B2 JP 6554483B2
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- JP
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- Prior art keywords
- wafer
- optical component
- dimensional
- predetermined
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461970289P | 2014-03-25 | 2014-03-25 | |
| US61/970,289 | 2014-03-25 | ||
| PCT/EP2015/056250 WO2015144700A2 (en) | 2014-03-25 | 2015-03-24 | Method and apparatus for generating a predetermined three-dimensional contour of an optical component and/or a wafer |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017517759A JP2017517759A (ja) | 2017-06-29 |
| JP2017517759A5 JP2017517759A5 (enExample) | 2018-06-14 |
| JP6554483B2 true JP6554483B2 (ja) | 2019-07-31 |
Family
ID=53724226
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016559363A Active JP6554483B2 (ja) | 2014-03-25 | 2015-03-24 | 光学構成要素及び/又はウェーハの予め決められた3次元輪郭を発生させる方法及び装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10353295B2 (enExample) |
| JP (1) | JP6554483B2 (enExample) |
| KR (1) | KR101913020B1 (enExample) |
| WO (1) | WO2015144700A2 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106796899B (zh) * | 2014-05-29 | 2019-11-05 | 布朗大学 | 用于确定衬底中的应力的光学系统和方法 |
| WO2017202665A1 (en) * | 2016-05-25 | 2017-11-30 | Asml Netherlands B.V. | Focus and overlay improvement by modifying a patterning device |
| DE102016224690B4 (de) | 2016-12-12 | 2020-07-23 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum Untersuchen eines Elements einer photolithographischen Maske für den EUV-Bereich |
| DE102017205629B4 (de) | 2017-04-03 | 2024-10-31 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum Reparieren von Defekten einer photolithographischen Maske für den EUV-Bereich |
| DE102017215995B4 (de) * | 2017-09-11 | 2021-05-12 | Carl Zeiss Smt Gmbh | Verfahren zur Untersuchung von photolithographischen Masken |
| EP3486721A1 (en) * | 2017-11-17 | 2019-05-22 | IMEC vzw | Mask for extreme-uv lithography and method for manufacturing the same |
| US12322599B2 (en) | 2018-06-12 | 2025-06-03 | Tokyo Electron Limited | Substrate processing method, modification device and substrate processing system |
| DE102019201497B3 (de) * | 2019-02-06 | 2020-06-18 | Carl Zeiss Smt Gmbh | Vorrichtung und Verfahren zum Bestimmen von Platzierungen von Pattern-Elementen einer reflektiven fotolithographischen Maske in deren Betriebsumgebung |
| CN109859137B (zh) * | 2019-02-14 | 2023-02-17 | 重庆邮电大学 | 一种广角相机非规则畸变全域校正方法 |
| US11393118B2 (en) * | 2019-06-18 | 2022-07-19 | Kla Corporation | Metrics for asymmetric wafer shape characterization |
| KR102705854B1 (ko) | 2019-07-23 | 2024-09-11 | 에스케이하이닉스 주식회사 | 반도체 소자의 분석 시스템 및 방법 |
| KR20210094835A (ko) | 2020-01-22 | 2021-07-30 | 삼성전자주식회사 | 레이저 빔을 이용하여 반사형 포토마스크를 어닐링하는 방법 |
| DE102020201482B4 (de) | 2020-02-06 | 2024-06-27 | Carl Zeiss Smt Gmbh | Vorrichtung und Verfahren zum Reparieren eines Defekts einer optischen Komponente für den extrem ultravioletten Wellenlängenbereich |
| JP7574767B2 (ja) * | 2020-10-30 | 2024-10-29 | Agc株式会社 | Euvl用ガラス基板、及びeuvl用マスクブランク |
| JP7574766B2 (ja) * | 2020-10-30 | 2024-10-29 | Agc株式会社 | Euvl用ガラス基板、及びeuvl用マスクブランク |
| EP4302156A1 (en) | 2021-03-01 | 2024-01-10 | Carl Zeiss SMS Ltd. | Method and apparatus for optimizing a defect correction for an optical element used in a lithographic process |
| US20220336226A1 (en) * | 2021-04-15 | 2022-10-20 | Tokyo Electron Limited | Method of correcting wafer bow using a direct write stress film |
| KR20240036734A (ko) * | 2021-08-27 | 2024-03-20 | 에이지씨 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 |
| US11852978B2 (en) * | 2022-03-07 | 2023-12-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | EUV lithography system with 3D sensing and tunning modules |
| JP7694474B2 (ja) * | 2022-06-23 | 2025-06-18 | 信越化学工業株式会社 | マスクブランクス用基板及びその製造方法 |
| EP4418304A1 (en) | 2023-02-17 | 2024-08-21 | Carl Zeiss SMS Ltd. | Wafer conditioning |
| EP4471499A1 (en) | 2023-06-02 | 2024-12-04 | Carl Zeiss SMS Ltd. | Ml reflectivity modification |
| CN117878018A (zh) * | 2024-01-12 | 2024-04-12 | 西安奕斯伟材料科技股份有限公司 | 一种调节工艺参数的方法、装置及介质 |
| DE102024102631A1 (de) * | 2024-01-30 | 2025-07-31 | TRUMPF Lasersystems for Semiconductor Manufacturing SE | Verfahren und laserbearbeitungsanlage zur laserbasierten oberflächenformkorrektur eines spiegels |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100735532B1 (ko) * | 2006-03-21 | 2007-07-04 | 삼성전자주식회사 | 기판 내에 팽창부를 포함하는 포토마스크 및 포토마스크의표면 평탄화 방법 |
| KR100791338B1 (ko) | 2006-08-07 | 2008-01-03 | 삼성전자주식회사 | 레지스트레이션이 보정된 포토마스크 및 포토마스크의레지스트레이션 보정 방법 |
| JP2008096741A (ja) * | 2006-10-12 | 2008-04-24 | Toshiba Corp | マスク、マスクの製造方法及び半導体装置の製造方法 |
| JP4909913B2 (ja) * | 2008-01-10 | 2012-04-04 | 株式会社東芝 | インプリントマスクの製造方法および半導体装置の製造方法 |
| JP2010044287A (ja) * | 2008-08-15 | 2010-02-25 | Renesas Technology Corp | フォトマスクの製造方法 |
| US8735030B2 (en) * | 2010-04-15 | 2014-05-27 | Carl Zeiss Smt Gmbh | Method and apparatus for modifying a substrate surface of a photolithographic mask |
| DE102011078927B4 (de) * | 2010-07-12 | 2019-01-31 | Carl Zeiss Sms Ltd. | Verfahren zum Korrigieren von Fehlern einer photolithographischen Maske |
| DE102011083774B4 (de) * | 2010-10-04 | 2019-06-13 | Carl Zeiss Sms Ltd. | Verfahren zum Bestimmen von Laser korrigierenden Tool-Parametern |
| WO2012103933A1 (en) * | 2011-02-01 | 2012-08-09 | Carl Zeiss Smt Gmbh | Method and apparatus for correcting errors in an euv lithography system |
| KR101656588B1 (ko) * | 2011-08-26 | 2016-09-09 | 칼 짜이스 에스엠에스 엘티디 | 포토리소그래피용 광학 소자를 국부적으로 변형하기 위한 방법 및 장치 |
-
2015
- 2015-03-24 WO PCT/EP2015/056250 patent/WO2015144700A2/en not_active Ceased
- 2015-03-24 KR KR1020167028830A patent/KR101913020B1/ko active Active
- 2015-03-24 JP JP2016559363A patent/JP6554483B2/ja active Active
-
2016
- 2016-09-22 US US15/272,936 patent/US10353295B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR101913020B1 (ko) | 2018-10-29 |
| US20170010540A1 (en) | 2017-01-12 |
| KR20160134783A (ko) | 2016-11-23 |
| US10353295B2 (en) | 2019-07-16 |
| WO2015144700A2 (en) | 2015-10-01 |
| WO2015144700A3 (en) | 2015-11-12 |
| JP2017517759A (ja) | 2017-06-29 |
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