JP6554483B2 - 光学構成要素及び/又はウェーハの予め決められた3次元輪郭を発生させる方法及び装置 - Google Patents

光学構成要素及び/又はウェーハの予め決められた3次元輪郭を発生させる方法及び装置 Download PDF

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JP6554483B2
JP6554483B2 JP2016559363A JP2016559363A JP6554483B2 JP 6554483 B2 JP6554483 B2 JP 6554483B2 JP 2016559363 A JP2016559363 A JP 2016559363A JP 2016559363 A JP2016559363 A JP 2016559363A JP 6554483 B2 JP6554483 B2 JP 6554483B2
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wafer
optical component
dimensional
predetermined
laser
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JP2017517759A5 (enExample
JP2017517759A (ja
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ウラディミル ドミトリエフ
ウラディミル ドミトリエフ
ベルント ゲー
ベルント ゲー
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カール ツァイス エスエムエス リミテッド
カール ツァイス エスエムエス リミテッド
カール・ツァイス・エスエムティー・ゲーエムベーハー
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70283Mask effects on the imaging process
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591Testing optical components
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60Substrates
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72Repair or correction of mask defects
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70316Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21KTECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062Devices having a multilayer structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2016559363A 2014-03-25 2015-03-24 光学構成要素及び/又はウェーハの予め決められた3次元輪郭を発生させる方法及び装置 Active JP6554483B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461970289P 2014-03-25 2014-03-25
US61/970,289 2014-03-25
PCT/EP2015/056250 WO2015144700A2 (en) 2014-03-25 2015-03-24 Method and apparatus for generating a predetermined three-dimensional contour of an optical component and/or a wafer

Publications (3)

Publication Number Publication Date
JP2017517759A JP2017517759A (ja) 2017-06-29
JP2017517759A5 JP2017517759A5 (enExample) 2018-06-14
JP6554483B2 true JP6554483B2 (ja) 2019-07-31

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US (1) US10353295B2 (enExample)
JP (1) JP6554483B2 (enExample)
KR (1) KR101913020B1 (enExample)
WO (1) WO2015144700A2 (enExample)

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WO2017202665A1 (en) * 2016-05-25 2017-11-30 Asml Netherlands B.V. Focus and overlay improvement by modifying a patterning device
DE102016224690B4 (de) 2016-12-12 2020-07-23 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum Untersuchen eines Elements einer photolithographischen Maske für den EUV-Bereich
DE102017205629B4 (de) 2017-04-03 2024-10-31 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum Reparieren von Defekten einer photolithographischen Maske für den EUV-Bereich
DE102017215995B4 (de) * 2017-09-11 2021-05-12 Carl Zeiss Smt Gmbh Verfahren zur Untersuchung von photolithographischen Masken
EP3486721A1 (en) * 2017-11-17 2019-05-22 IMEC vzw Mask for extreme-uv lithography and method for manufacturing the same
US12322599B2 (en) 2018-06-12 2025-06-03 Tokyo Electron Limited Substrate processing method, modification device and substrate processing system
DE102019201497B3 (de) * 2019-02-06 2020-06-18 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zum Bestimmen von Platzierungen von Pattern-Elementen einer reflektiven fotolithographischen Maske in deren Betriebsumgebung
CN109859137B (zh) * 2019-02-14 2023-02-17 重庆邮电大学 一种广角相机非规则畸变全域校正方法
US11393118B2 (en) * 2019-06-18 2022-07-19 Kla Corporation Metrics for asymmetric wafer shape characterization
KR102705854B1 (ko) 2019-07-23 2024-09-11 에스케이하이닉스 주식회사 반도체 소자의 분석 시스템 및 방법
KR20210094835A (ko) 2020-01-22 2021-07-30 삼성전자주식회사 레이저 빔을 이용하여 반사형 포토마스크를 어닐링하는 방법
DE102020201482B4 (de) 2020-02-06 2024-06-27 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zum Reparieren eines Defekts einer optischen Komponente für den extrem ultravioletten Wellenlängenbereich
JP7574767B2 (ja) * 2020-10-30 2024-10-29 Agc株式会社 Euvl用ガラス基板、及びeuvl用マスクブランク
JP7574766B2 (ja) * 2020-10-30 2024-10-29 Agc株式会社 Euvl用ガラス基板、及びeuvl用マスクブランク
EP4302156A1 (en) 2021-03-01 2024-01-10 Carl Zeiss SMS Ltd. Method and apparatus for optimizing a defect correction for an optical element used in a lithographic process
US20220336226A1 (en) * 2021-04-15 2022-10-20 Tokyo Electron Limited Method of correcting wafer bow using a direct write stress film
KR20240036734A (ko) * 2021-08-27 2024-03-20 에이지씨 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법
US11852978B2 (en) * 2022-03-07 2023-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. EUV lithography system with 3D sensing and tunning modules
JP7694474B2 (ja) * 2022-06-23 2025-06-18 信越化学工業株式会社 マスクブランクス用基板及びその製造方法
EP4418304A1 (en) 2023-02-17 2024-08-21 Carl Zeiss SMS Ltd. Wafer conditioning
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Publication number Publication date
KR101913020B1 (ko) 2018-10-29
US20170010540A1 (en) 2017-01-12
KR20160134783A (ko) 2016-11-23
US10353295B2 (en) 2019-07-16
WO2015144700A2 (en) 2015-10-01
WO2015144700A3 (en) 2015-11-12
JP2017517759A (ja) 2017-06-29

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