KR101913020B1 - 광학 부품 및/또는 웨이퍼의 미리 정해진 3차원 윤곽을 생성하는 방법 및 장치 - Google Patents
광학 부품 및/또는 웨이퍼의 미리 정해진 3차원 윤곽을 생성하는 방법 및 장치 Download PDFInfo
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- KR101913020B1 KR101913020B1 KR1020167028830A KR20167028830A KR101913020B1 KR 101913020 B1 KR101913020 B1 KR 101913020B1 KR 1020167028830 A KR1020167028830 A KR 1020167028830A KR 20167028830 A KR20167028830 A KR 20167028830A KR 101913020 B1 KR101913020 B1 KR 101913020B1
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
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- G03F7/70283—Mask effects on the imaging process
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461970289P | 2014-03-25 | 2014-03-25 | |
| US61/970,289 | 2014-03-25 | ||
| PCT/EP2015/056250 WO2015144700A2 (en) | 2014-03-25 | 2015-03-24 | Method and apparatus for generating a predetermined three-dimensional contour of an optical component and/or a wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20160134783A KR20160134783A (ko) | 2016-11-23 |
| KR101913020B1 true KR101913020B1 (ko) | 2018-10-29 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020167028830A Active KR101913020B1 (ko) | 2014-03-25 | 2015-03-24 | 광학 부품 및/또는 웨이퍼의 미리 정해진 3차원 윤곽을 생성하는 방법 및 장치 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10353295B2 (enExample) |
| JP (1) | JP6554483B2 (enExample) |
| KR (1) | KR101913020B1 (enExample) |
| WO (1) | WO2015144700A2 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210124399A (ko) * | 2019-02-06 | 2021-10-14 | 칼 짜이스 에스엠티 게엠베하 | 반사 포토리소그래피 마스크의 패턴 요소의 작동 환경에서의 배치를 결정하기 위한 장치 및 방법 |
| US11295970B2 (en) | 2019-07-23 | 2022-04-05 | SK Hynix Inc. | System and method for analyzing a semiconductor device |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI688755B (zh) * | 2014-05-29 | 2020-03-21 | 布朗大學 | 用於判定基板中之應力的光學系統及方法以及具有電腦可執行指令之電腦儲存媒體 |
| WO2017202665A1 (en) * | 2016-05-25 | 2017-11-30 | Asml Netherlands B.V. | Focus and overlay improvement by modifying a patterning device |
| DE102016224690B4 (de) | 2016-12-12 | 2020-07-23 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum Untersuchen eines Elements einer photolithographischen Maske für den EUV-Bereich |
| DE102017205629B4 (de) | 2017-04-03 | 2024-10-31 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum Reparieren von Defekten einer photolithographischen Maske für den EUV-Bereich |
| DE102017215995B4 (de) * | 2017-09-11 | 2021-05-12 | Carl Zeiss Smt Gmbh | Verfahren zur Untersuchung von photolithographischen Masken |
| EP3486721A1 (en) * | 2017-11-17 | 2019-05-22 | IMEC vzw | Mask for extreme-uv lithography and method for manufacturing the same |
| JP7085623B2 (ja) * | 2018-06-12 | 2022-06-16 | 東京エレクトロン株式会社 | 基板処理方法 |
| CN109859137B (zh) * | 2019-02-14 | 2023-02-17 | 重庆邮电大学 | 一种广角相机非规则畸变全域校正方法 |
| US11393118B2 (en) * | 2019-06-18 | 2022-07-19 | Kla Corporation | Metrics for asymmetric wafer shape characterization |
| KR20210094835A (ko) | 2020-01-22 | 2021-07-30 | 삼성전자주식회사 | 레이저 빔을 이용하여 반사형 포토마스크를 어닐링하는 방법 |
| DE102020201482B4 (de) | 2020-02-06 | 2024-06-27 | Carl Zeiss Smt Gmbh | Vorrichtung und Verfahren zum Reparieren eines Defekts einer optischen Komponente für den extrem ultravioletten Wellenlängenbereich |
| JP7574766B2 (ja) * | 2020-10-30 | 2024-10-29 | Ａｇｃ株式会社 | Ｅｕｖｌ用ガラス基板、及びｅｕｖｌ用マスクブランク |
| JP7574767B2 (ja) * | 2020-10-30 | 2024-10-29 | Ａｇｃ株式会社 | Ｅｕｖｌ用ガラス基板、及びｅｕｖｌ用マスクブランク |
| WO2022185298A1 (en) | 2021-03-01 | 2022-09-09 | Carl Zeiss Sms Ltd. | Method and apparatus for optimizing a defect correction for an optical element used in a lithographic process |
| US20220336226A1 (en) * | 2021-04-15 | 2022-10-20 | Tokyo Electron Limited | Method of correcting wafer bow using a direct write stress film |
| JP7315123B1 (ja) * | 2021-08-27 | 2023-07-26 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
| US11852978B2 (en) * | 2022-03-07 | 2023-12-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | EUV lithography system with 3D sensing and tunning modules |
| JP7694474B2 (ja) * | 2022-06-23 | 2025-06-18 | 信越化学工業株式会社 | マスクブランクス用基板及びその製造方法 |
| EP4418304A1 (en) | 2023-02-17 | 2024-08-21 | Carl Zeiss SMS Ltd. | Wafer conditioning |
| EP4471499A1 (en) | 2023-06-02 | 2024-12-04 | Carl Zeiss SMS Ltd. | Ml reflectivity modification |
| CN117878018A (zh) * | 2024-01-12 | 2024-04-12 | 西安奕斯伟材料科技股份有限公司 | 一种调节工艺参数的方法、装置及介质 |
| DE102024102631A1 (de) * | 2024-01-30 | 2025-07-31 | TRUMPF Lasersystems for Semiconductor Manufacturing SE | Verfahren und laserbearbeitungsanlage zur laserbasierten oberflächenformkorrektur eines spiegels |
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- 2015-03-24 KR KR1020167028830A patent/KR101913020B1/ko active Active
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| US20120009511A1 (en) | 2010-07-12 | 2012-01-12 | Carl Zeiss Sms Ltd. | Method and apparatus for correcting errors of a photolithographic mask |
| JP2012088712A (ja) * | 2010-10-04 | 2012-05-10 | Carl Zeiss Sms Ltd | レーザ補正ツールパラメータを決定する方法及び装置 |
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| KR20210124399A (ko) * | 2019-02-06 | 2021-10-14 | 칼 짜이스 에스엠티 게엠베하 | 반사 포토리소그래피 마스크의 패턴 요소의 작동 환경에서의 배치를 결정하기 위한 장치 및 방법 |
| KR102795464B1 (ko) | 2019-02-06 | 2025-04-15 | 칼 짜이스 에스엠티 게엠베하 | 반사 포토리소그래피 마스크의 패턴 요소의 작동 환경에서의 배치를 결정하기 위한 장치 및 방법 |
| US12321091B2 (en) | 2019-02-06 | 2025-06-03 | Carl Zeiss Smt Gmbh | Device and method for determining placements of pattern elements of a reflective photolithographic mask in the operating environment thereof |
| US11295970B2 (en) | 2019-07-23 | 2022-04-05 | SK Hynix Inc. | System and method for analyzing a semiconductor device |
| US11626306B2 (en) | 2019-07-23 | 2023-04-11 | SK Hynix Inc. | Method for analyzing a semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| US10353295B2 (en) | 2019-07-16 |
| WO2015144700A2 (en) | 2015-10-01 |
| JP2017517759A (ja) | 2017-06-29 |
| US20170010540A1 (en) | 2017-01-12 |
| WO2015144700A3 (en) | 2015-11-12 |
| JP6554483B2 (ja) | 2019-07-31 |
| KR20160134783A (ko) | 2016-11-23 |
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