JP2017517736A5 - - Google Patents

Download PDF

Info

Publication number
JP2017517736A5
JP2017517736A5 JP2016571693A JP2016571693A JP2017517736A5 JP 2017517736 A5 JP2017517736 A5 JP 2017517736A5 JP 2016571693 A JP2016571693 A JP 2016571693A JP 2016571693 A JP2016571693 A JP 2016571693A JP 2017517736 A5 JP2017517736 A5 JP 2017517736A5
Authority
JP
Japan
Prior art keywords
transistor
current
gate
transistors
source voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2016571693A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017517736A (ja
JP6374036B2 (ja
Filing date
Publication date
Priority claimed from US14/300,110 external-priority patent/US9816872B2/en
Application filed filed Critical
Publication of JP2017517736A publication Critical patent/JP2017517736A/ja
Publication of JP2017517736A5 publication Critical patent/JP2017517736A5/ja
Application granted granted Critical
Publication of JP6374036B2 publication Critical patent/JP6374036B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2016571693A 2014-06-09 2015-05-18 低電力低コスト温度センサ Active JP6374036B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/300,110 2014-06-09
US14/300,110 US9816872B2 (en) 2014-06-09 2014-06-09 Low power low cost temperature sensor
PCT/US2015/031430 WO2015191251A1 (en) 2014-06-09 2015-05-18 Low power low cost temperature sensor

Publications (3)

Publication Number Publication Date
JP2017517736A JP2017517736A (ja) 2017-06-29
JP2017517736A5 true JP2017517736A5 (enExample) 2018-01-25
JP6374036B2 JP6374036B2 (ja) 2018-08-15

Family

ID=53298609

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016571693A Active JP6374036B2 (ja) 2014-06-09 2015-05-18 低電力低コスト温度センサ

Country Status (7)

Country Link
US (1) US9816872B2 (enExample)
EP (1) EP3152538B1 (enExample)
JP (1) JP6374036B2 (enExample)
KR (1) KR101908531B1 (enExample)
CN (1) CN106461470B (enExample)
BR (1) BR112016028619B1 (enExample)
WO (1) WO2015191251A1 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10061331B2 (en) * 2015-01-22 2018-08-28 Qualcomm Incorporated Systems and methods for detecting thermal runaway
CN107255529A (zh) * 2017-06-19 2017-10-17 武汉科技大学 一种高精度温度传感器
CN107356348B (zh) * 2017-07-20 2019-07-05 京东方科技集团股份有限公司 一种温度传感器及其温度检测方法
US20190025135A1 (en) * 2017-07-24 2019-01-24 Qualcomm Incorporated Non-linearity correction technique for temperature sensor in digital power supply
US10578497B2 (en) * 2017-09-17 2020-03-03 Qualcomm Incorporated Diode-based temperature sensor
US10539470B2 (en) 2017-10-19 2020-01-21 Qualcomm Incorporated Sub-threshold-based semiconductor temperature sensor
JP6962795B2 (ja) * 2017-11-22 2021-11-05 ルネサスエレクトロニクス株式会社 半導体装置および半導体システム
US12282058B2 (en) 2017-11-23 2025-04-22 Proteantecs Ltd. Integrated circuit pad failure detection
CN108061611B (zh) * 2017-12-10 2019-08-09 北京工业大学 一种利用fpga嵌入式环形振荡器测量温度分布的装置和方法
US20190229713A1 (en) * 2018-01-25 2019-07-25 Texas Instruments Incorporated Temperature compensation circuit for a ring oscillator
TWI828676B (zh) 2018-04-16 2024-01-11 以色列商普騰泰克斯有限公司 用於積體電路剖析及異常檢測之方法和相關的電腦程式產品
TWI796494B (zh) 2018-06-19 2023-03-21 以色列商普騰泰克斯有限公司 高效積體電路模擬及測試
US11209878B2 (en) * 2018-07-31 2021-12-28 Taiwan Semiconductor Manufacturing Co., Ltd. Discrete time loop based thermal control
KR102623677B1 (ko) * 2018-12-11 2024-01-11 삼성전자주식회사 피엠아이씨(pmic) 모델링 시스템 및 이의 구동 방법
KR102100691B1 (ko) * 2018-12-27 2020-04-14 연세대학교 산학협력단 캐스케이드 구조 기반의 바이어스 회로를 이용하는 전류 측정 장치 및 그 방법
US11226671B2 (en) * 2019-02-27 2022-01-18 Micron Technology, Inc. Power translator component
EP4004509B1 (en) * 2019-07-29 2025-01-29 Proteantecs Ltd. On-die thermal sensing network for integrated circuits
US11698307B2 (en) * 2019-12-31 2023-07-11 Texas Instruments Incorporated Methods and apparatus to trim temperature sensors
GB2590976B (en) 2020-01-13 2022-04-20 Nokia Technologies Oy Semiconductor based temperature sensor
US12294357B2 (en) 2020-05-25 2025-05-06 Samsung Electronics Co., Ltd. Temperature sensor circuits for integrated circuit devices
EP4176276A4 (en) 2020-07-06 2024-08-07 Proteantecs Ltd. Integrated circuit margin measurement for structural testing
FR3116604B1 (fr) * 2020-11-24 2022-10-14 St Microelectronics Rousset Procédé de calibrage d'un capteur de température à oscillateur en anneau
CN113008410B (zh) * 2021-03-01 2023-02-28 南京邮电大学 用于集成电路的温度传感器
TW202247610A (zh) 2021-04-07 2022-12-01 以色列商普騰泰克斯有限公司 基於時脈循環時間測量的自適應頻率縮放
CN115235649A (zh) * 2021-04-25 2022-10-25 平头哥(上海)半导体技术有限公司 数字温度传感器
CN113867468B (zh) * 2021-10-14 2022-10-14 电子科技大学 一种基于mos管的低功耗、高电源抑制能力温度传感器
EP4372342A1 (en) * 2022-11-15 2024-05-22 Tridonic GmbH & Co. KG Temperature sensor calibration for electronic devices
US12123908B1 (en) 2023-09-12 2024-10-22 Proteantecs Ltd. Loopback testing of integrated circuits
US12461143B2 (en) 2024-01-24 2025-11-04 Proteantecs Ltd. Integrated circuit margin measurement
KR102689671B1 (ko) * 2024-02-28 2024-07-30 국립한밭대학교 산학협력단 극저온에서 동작하는 온도 센서

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5816767B2 (ja) * 1977-09-26 1983-04-02 株式会社日立製作所 Ａ／ｄ変換器
US4387349A (en) * 1980-12-15 1983-06-07 National Semiconductor Corporation Low power CMOS crystal oscillator
GB2248151A (en) 1990-09-24 1992-03-25 Philips Electronic Associated Temperature sensing and protection circuit.
US5336943A (en) 1991-07-19 1994-08-09 U.S. Philips Corporation Temperature sensing circuit
US5902044A (en) * 1997-06-27 1999-05-11 International Business Machines Corporation Integrated hot spot detector for design, analysis, and control
GB9716838D0 (en) 1997-08-08 1997-10-15 Philips Electronics Nv Temperature sensing circuits
US5961215A (en) * 1997-09-26 1999-10-05 Advanced Micro Devices, Inc. Temperature sensor integral with microprocessor and methods of using same
JPH11346143A (ja) 1998-06-02 1999-12-14 Nec Corp リングオッシレータの制御回路及び制御方法
JP3476363B2 (ja) * 1998-06-05 2003-12-10 日本電気株式会社 バンドギャップ型基準電圧発生回路
US6735110B1 (en) * 2002-04-17 2004-05-11 Xilinx, Inc. Memory cells enhanced for resistance to single event upset
GB2393867B (en) 2002-10-01 2006-09-20 Wolfson Ltd Temperature sensing apparatus and methods
JP4363871B2 (ja) * 2003-03-19 2009-11-11 Ｏｋｉセミコンダクタ株式会社 半導体装置
US7737871B2 (en) * 2004-06-03 2010-06-15 Silicon Laboratories Inc. MCU with integrated voltage isolator to provide a galvanic isolation between input and output
US7458041B2 (en) * 2004-09-30 2008-11-25 Magma Design Automation, Inc. Circuit optimization with posynomial function F having an exponent of a first design parameter
JP4768339B2 (ja) * 2005-07-15 2011-09-07 株式会社リコー 温度検出回路およびそれを用いた発振周波数補正装置
JP2007121244A (ja) * 2005-10-31 2007-05-17 Okayama Prefecture 温度検出回路
US7405552B2 (en) * 2006-01-04 2008-07-29 Micron Technology, Inc. Semiconductor temperature sensor with high sensitivity
US7411436B2 (en) * 2006-02-28 2008-08-12 Cornell Research Foundation, Inc. Self-timed thermally-aware circuits and methods of use thereof
JP5226248B2 (ja) * 2006-08-02 2013-07-03 ルネサスエレクトロニクス株式会社 温度検出回路及び半導体装置
US7482858B2 (en) 2006-12-13 2009-01-27 Taiwan Semiconductor Manufacturing Co., Ltd. Temperature-sensitive current source
JP5155717B2 (ja) 2007-04-02 2013-03-06 高麗大学産学協力団 発振回路を利用した温度測定装置及び方法
US7880533B2 (en) * 2008-03-25 2011-02-01 Analog Devices, Inc. Bandgap voltage reference circuit
US7961033B2 (en) * 2008-09-19 2011-06-14 Cavium Networks, Inc. DLL-based temperature sensor
US8502317B2 (en) * 2009-02-06 2013-08-06 Leendert Jan van den Berg Level shifter circuits for integrated circuits
US7944271B2 (en) * 2009-02-10 2011-05-17 Standard Microsystems Corporation Temperature and supply independent CMOS current source
US9004754B2 (en) 2009-04-22 2015-04-14 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal sensors and methods of operating thereof
CN101943613B (zh) * 2009-07-03 2014-07-23 飞思卡尔半导体公司 亚阈值cmos温度检测器
US8275728B2 (en) * 2009-11-05 2012-09-25 The United States Of America As Represented By The Secretary Of The Air Force Neuromorphic computer
TWI387736B (zh) 2009-11-18 2013-03-01 Univ Nat Changhua Education 操作於次臨界區之低功率溫度感測器
US20110169551A1 (en) * 2010-01-08 2011-07-14 Stanescu Cornel D Temperature sensor and method
DE102012210263B4 (de) 2011-11-18 2024-01-11 Robert Bosch Gmbh Batteriezelle mit einem im Batteriezellgehäuse integrierten Temperatursensor
US9234804B2 (en) * 2011-12-29 2016-01-12 Stmicroelectronics Asia Pacific Pte Ltd Temperature sensor for image sensors
US9004756B2 (en) * 2012-04-10 2015-04-14 Freescale Semiconductor, Inc. Temperature sensor
US20140061728A1 (en) * 2012-08-29 2014-03-06 Diagtronix Inc. Gate Biasing Electrodes For FET Sensors
US9154079B2 (en) * 2012-10-24 2015-10-06 Qualcomm Incorporated Threshold tracking bias voltage for mixers
WO2015012798A1 (en) * 2013-07-22 2015-01-29 Intel Corporation Current-mode digital temperature sensor apparatus
US10033069B2 (en) 2013-07-31 2018-07-24 General Electric Company Porous absorbent for sodium metal halide cells
US9939335B2 (en) * 2014-12-17 2018-04-10 Nxp Usa, Inc. Over-temperature detector with test mode
US9970826B2 (en) * 2015-03-04 2018-05-15 Qualcomm Incorporated Bipolar junction transistor voltage-drop-based temperature sensors
WO2017014336A1 (ko) * 2015-07-21 2017-01-26 주식회사 실리콘웍스 비선형 성분이 보상된 온도 센서 회로 및 온도 센서 회로의 보상 방법

Similar Documents

Publication Publication Date Title
JP2017517736A5 (enExample)
US9213351B2 (en) Bi-directional current sensor
JP2015089126A5 (enExample)
JP2019507427A5 (enExample)
CN111226098B (zh) 改进的基于亚阈值的半导体温度传感器
JP2007243178A5 (enExample)
US12007803B2 (en) Controllable temperature coefficient bias circuit
TWI476561B (zh) 電壓產生器
US10268228B2 (en) Voltage reference circuit
JP2018537789A (ja) 抵抗器の両端の制御電圧を印加する温度補償基準電圧ジェネレータ
JP6328849B2 (ja) 擬似抵抗回路及び電荷検出回路
US20170142786A1 (en) Low-Headroom Constant Current Source for High-Current Appliations
ATE557472T1 (de) Ic eines integrators mit erweiterter stabiilität und stabilisierungsverfahren
US9958484B2 (en) Apparatus and method for measuring load current by applying compensated gain to voltage derived from drain-to-source voltage of power gating device
JP2007019631A (ja) Ｆｅｔバイアス回路
Sanuy et al. Wideband pulse amplifiers for the NECTAr chip
JP2016126550A (ja) 定電流回路及びこれを有するセンサ装置
JP2017146306A5 (enExample)
US20150115717A1 (en) Mos-based voltage reference circuit
JP6542103B2 (ja) 過熱検出回路、過熱保護回路、及び半導体装置
US9547321B2 (en) Temperature sensor circuit and integrated circuit
TWM408885U (en) signal generating circuit
JP6506592B2 (ja) センサ装置
JP5239912B2 (ja) ２乗回路
Sharma et al. Novel Approach For Current Amplification With Low Power Dissipation