BR112016028619B1 - Sensor de temperatura de baixa potência e baixo custo - Google Patents
Sensor de temperatura de baixa potência e baixo custo Download PDFInfo
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- BR112016028619B1 BR112016028619B1 BR112016028619-7A BR112016028619A BR112016028619B1 BR 112016028619 B1 BR112016028619 B1 BR 112016028619B1 BR 112016028619 A BR112016028619 A BR 112016028619A BR 112016028619 B1 BR112016028619 B1 BR 112016028619B1
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- temperature
- transistor
- current
- gate
- transistors
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- 238000000034 method Methods 0.000 claims abstract description 26
- 239000003990 capacitor Substances 0.000 claims description 13
- 230000008859 change Effects 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 3
- 230000010287 polarization Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 7
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- 230000008569 process Effects 0.000 description 6
- 230000001419 dependent effect Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
- G01K7/015—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions using microstructures, e.g. made of silicon
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K13/00—Thermometers specially adapted for specific purposes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K15/00—Testing or calibrating of thermometers
- G01K15/005—Calibration
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/300,110 | 2014-06-09 | ||
| US14/300,110 US9816872B2 (en) | 2014-06-09 | 2014-06-09 | Low power low cost temperature sensor |
| PCT/US2015/031430 WO2015191251A1 (en) | 2014-06-09 | 2015-05-18 | Low power low cost temperature sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| BR112016028619A2 BR112016028619A2 (pt) | 2017-08-22 |
| BR112016028619B1 true BR112016028619B1 (pt) | 2022-07-12 |
Family
ID=53298609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR112016028619-7A BR112016028619B1 (pt) | 2014-06-09 | 2015-05-18 | Sensor de temperatura de baixa potência e baixo custo |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9816872B2 (enExample) |
| EP (1) | EP3152538B1 (enExample) |
| JP (1) | JP6374036B2 (enExample) |
| KR (1) | KR101908531B1 (enExample) |
| CN (1) | CN106461470B (enExample) |
| BR (1) | BR112016028619B1 (enExample) |
| WO (1) | WO2015191251A1 (enExample) |
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| US10061331B2 (en) * | 2015-01-22 | 2018-08-28 | Qualcomm Incorporated | Systems and methods for detecting thermal runaway |
| CN107255529A (zh) * | 2017-06-19 | 2017-10-17 | 武汉科技大学 | 一种高精度温度传感器 |
| CN107356348B (zh) * | 2017-07-20 | 2019-07-05 | 京东方科技集团股份有限公司 | 一种温度传感器及其温度检测方法 |
| US20190025135A1 (en) * | 2017-07-24 | 2019-01-24 | Qualcomm Incorporated | Non-linearity correction technique for temperature sensor in digital power supply |
| US10578497B2 (en) * | 2017-09-17 | 2020-03-03 | Qualcomm Incorporated | Diode-based temperature sensor |
| US10539470B2 (en) | 2017-10-19 | 2020-01-21 | Qualcomm Incorporated | Sub-threshold-based semiconductor temperature sensor |
| JP6962795B2 (ja) * | 2017-11-22 | 2021-11-05 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体システム |
| US12282058B2 (en) | 2017-11-23 | 2025-04-22 | Proteantecs Ltd. | Integrated circuit pad failure detection |
| CN108061611B (zh) * | 2017-12-10 | 2019-08-09 | 北京工业大学 | 一种利用fpga嵌入式环形振荡器测量温度分布的装置和方法 |
| US20190229713A1 (en) * | 2018-01-25 | 2019-07-25 | Texas Instruments Incorporated | Temperature compensation circuit for a ring oscillator |
| TWI828676B (zh) | 2018-04-16 | 2024-01-11 | 以色列商普騰泰克斯有限公司 | 用於積體電路剖析及異常檢測之方法和相關的電腦程式產品 |
| US11132485B2 (en) | 2018-06-19 | 2021-09-28 | Proteantecs Ltd. | Efficient integrated circuit simulation and testing |
| US11209878B2 (en) * | 2018-07-31 | 2021-12-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Discrete time loop based thermal control |
| KR102623677B1 (ko) * | 2018-12-11 | 2024-01-11 | 삼성전자주식회사 | 피엠아이씨(pmic) 모델링 시스템 및 이의 구동 방법 |
| KR102100691B1 (ko) * | 2018-12-27 | 2020-04-14 | 연세대학교 산학협력단 | 캐스케이드 구조 기반의 바이어스 회로를 이용하는 전류 측정 장치 및 그 방법 |
| US11226671B2 (en) * | 2019-02-27 | 2022-01-18 | Micron Technology, Inc. | Power translator component |
| CN114430803A (zh) * | 2019-07-29 | 2022-05-03 | 普罗泰克斯公司 | 用于集成电路的管芯上热感测网络 |
| US11698307B2 (en) * | 2019-12-31 | 2023-07-11 | Texas Instruments Incorporated | Methods and apparatus to trim temperature sensors |
| GB2590976B (en) | 2020-01-13 | 2022-04-20 | Nokia Technologies Oy | Semiconductor based temperature sensor |
| US11515871B2 (en) | 2020-05-25 | 2022-11-29 | Mavagail Technology, LLC | Temperature sensor circuits for integrated circuit devices |
| KR20230029991A (ko) | 2020-07-06 | 2023-03-03 | 프로틴텍스 엘티디. | 구조 테스팅을 위한 집적 회로 마진 측정 |
| FR3116604B1 (fr) * | 2020-11-24 | 2022-10-14 | St Microelectronics Rousset | Procédé de calibrage d'un capteur de température à oscillateur en anneau |
| CN113008410B (zh) * | 2021-03-01 | 2023-02-28 | 南京邮电大学 | 用于集成电路的温度传感器 |
| CN117222960A (zh) | 2021-04-07 | 2023-12-12 | 普腾泰克斯有限公司 | 基于时钟循环时间测量的自适应频率缩放 |
| CN115235649A (zh) * | 2021-04-25 | 2022-10-25 | 平头哥(上海)半导体技术有限公司 | 数字温度传感器 |
| CN113867468B (zh) * | 2021-10-14 | 2022-10-14 | 电子科技大学 | 一种基于mos管的低功耗、高电源抑制能力温度传感器 |
| EP4372342A1 (en) * | 2022-11-15 | 2024-05-22 | Tridonic GmbH & Co. KG | Temperature sensor calibration for electronic devices |
| US12123908B1 (en) | 2023-09-12 | 2024-10-22 | Proteantecs Ltd. | Loopback testing of integrated circuits |
| US12461143B2 (en) | 2024-01-24 | 2025-11-04 | Proteantecs Ltd. | Integrated circuit margin measurement |
| KR102689671B1 (ko) * | 2024-02-28 | 2024-07-30 | 국립한밭대학교 산학협력단 | 극저온에서 동작하는 온도 센서 |
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| JPS5816767B2 (ja) * | 1977-09-26 | 1983-04-02 | 株式会社日立製作所 | A/d変換器 |
| US4387349A (en) * | 1980-12-15 | 1983-06-07 | National Semiconductor Corporation | Low power CMOS crystal oscillator |
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-
2014
- 2014-06-09 US US14/300,110 patent/US9816872B2/en active Active
-
2015
- 2015-05-18 KR KR1020167034080A patent/KR101908531B1/ko active Active
- 2015-05-18 WO PCT/US2015/031430 patent/WO2015191251A1/en not_active Ceased
- 2015-05-18 JP JP2016571693A patent/JP6374036B2/ja active Active
- 2015-05-18 CN CN201580030369.XA patent/CN106461470B/zh active Active
- 2015-05-18 BR BR112016028619-7A patent/BR112016028619B1/pt active IP Right Grant
- 2015-05-18 EP EP15727511.6A patent/EP3152538B1/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN106461470B (zh) | 2019-07-02 |
| JP2017517736A (ja) | 2017-06-29 |
| JP6374036B2 (ja) | 2018-08-15 |
| WO2015191251A1 (en) | 2015-12-17 |
| KR20170012293A (ko) | 2017-02-02 |
| KR101908531B1 (ko) | 2018-10-16 |
| BR112016028619A2 (pt) | 2017-08-22 |
| EP3152538A1 (en) | 2017-04-12 |
| CN106461470A (zh) | 2017-02-22 |
| US20150355033A1 (en) | 2015-12-10 |
| EP3152538B1 (en) | 2019-10-16 |
| US9816872B2 (en) | 2017-11-14 |
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| Date | Code | Title | Description |
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| B06U | Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette] | ||
| B09A | Decision: intention to grant [chapter 9.1 patent gazette] | ||
| B16A | Patent or certificate of addition of invention granted [chapter 16.1 patent gazette] |
Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 18/05/2015, OBSERVADAS AS CONDICOES LEGAIS |