JP2017516312A5 - - Google Patents
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- Publication number
- JP2017516312A5 JP2017516312A5 JP2016567562A JP2016567562A JP2017516312A5 JP 2017516312 A5 JP2017516312 A5 JP 2017516312A5 JP 2016567562 A JP2016567562 A JP 2016567562A JP 2016567562 A JP2016567562 A JP 2016567562A JP 2017516312 A5 JP2017516312 A5 JP 2017516312A5
- Authority
- JP
- Japan
- Prior art keywords
- power module
- transistor
- power
- diode
- switch modules
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 230000005669 field effect Effects 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical group 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 238000009413 insulation Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/277,820 US9373617B2 (en) | 2011-09-11 | 2014-05-15 | High current, low switching loss SiC power module |
| US14/277,820 | 2014-05-15 | ||
| PCT/US2015/030853 WO2015175820A1 (en) | 2014-05-15 | 2015-05-14 | HIGH CURRENT, LOW SWITCHING LOSS SiC POWER MODULE |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020015417A Division JP7056836B2 (ja) | 2014-05-15 | 2020-01-31 | 高電流、低スイッチングロスのＳｉＣパワーモジュール |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017516312A JP2017516312A (ja) | 2017-06-15 |
| JP2017516312A5 true JP2017516312A5 (https=) | 2017-12-07 |
| JP7000022B2 JP7000022B2 (ja) | 2022-01-19 |
Family
ID=53277078
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016567562A Active JP7000022B2 (ja) | 2014-05-15 | 2015-05-14 | 高電流、低スイッチングロスのＳｉＣパワーモジュール |
| JP2020015417A Active JP7056836B2 (ja) | 2014-05-15 | 2020-01-31 | 高電流、低スイッチングロスのＳｉＣパワーモジュール |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020015417A Active JP7056836B2 (ja) | 2014-05-15 | 2020-01-31 | 高電流、低スイッチングロスのＳｉＣパワーモジュール |
Country Status (4)
| Country | Link |
|---|---|
| JP (2) | JP7000022B2 (https=) |
| CN (2) | CN106537586B (https=) |
| DE (1) | DE112015002272B4 (https=) |
| WO (1) | WO2015175820A1 (https=) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7210446B2 (ja) * | 2016-11-25 | 2023-01-23 | ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト | パワー半導体モジュール |
| US10749443B2 (en) | 2017-01-13 | 2020-08-18 | Cree Fayetteville, Inc. | High power multilayer module having low inductance and fast switching for paralleling power devices |
| US11696417B2 (en) | 2017-01-13 | 2023-07-04 | Wolfspeed, Inc. | High power multilayer module having low inductance and fast switching for paralleling power devices |
| US10917992B2 (en) | 2017-01-13 | 2021-02-09 | Cree Fayetteville, Inc. | High power multilayer module having low inductance and fast switching for paralleling power devices |
| JP7163054B2 (ja) * | 2017-04-20 | 2022-10-31 | ローム株式会社 | 半導体装置 |
| JP6893169B2 (ja) * | 2017-12-26 | 2021-06-23 | 株式会社日立製作所 | パワーモジュールおよび電力変換装置 |
| CN108598074B (zh) * | 2018-06-15 | 2024-02-02 | 华北电力大学 | 一种新型封装结构的功率模块 |
| CN111245230B (zh) * | 2018-11-29 | 2021-06-04 | 致茂电子(苏州)有限公司 | 半桥电路组件及切换式电源供应器 |
| EP3909124A4 (en) * | 2019-01-10 | 2022-10-26 | Wolfspeed, Inc. | HIGH POWER MULTI-LAYER LOW INDUCTANCE FAST SWITCHING MODULE FOR PARALLEL POWER DEVICES |
| US11418141B2 (en) * | 2019-09-18 | 2022-08-16 | Eaton Intelligent Power Limited | Hybrid drive apparatus |
| CN112953168A (zh) * | 2021-03-03 | 2021-06-11 | 中山市科力高氢能设备有限公司 | 一种开关管电路结构及电路系统 |
| CN116918066A (zh) | 2021-09-09 | 2023-10-20 | 富士电机株式会社 | 半导体模块 |
| DE102021214521A1 (de) | 2021-12-16 | 2023-06-22 | Robert Bosch Gesellschaft mit beschränkter Haftung | Vorrichtung, Halbbrücke und Verfahren zum Betreiben einer Vorrichtung |
| JP7750810B2 (ja) * | 2022-09-12 | 2025-10-07 | 株式会社東芝 | 半導体装置 |
| DE102022134658A1 (de) | 2022-12-22 | 2024-06-27 | Valeo Eautomotive Germany Gmbh | Leistungsmodul, elektrischer Leistungswandler und elektrischer Antrieb für ein Transportmittel |
| CN221614839U (zh) * | 2023-12-08 | 2024-08-27 | 上海理想汽车科技有限公司 | 功率半导体模块及半桥功率模块 |
| CN119050103B (zh) * | 2024-08-19 | 2025-09-23 | 复旦大学 | 一种功率模块的多层金属绝缘基板及其制备方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69726518T2 (de) | 1996-09-06 | 2004-10-07 | Hitachi Ltd | Leistungshalbleiteranordnung in modularer Bauart |
| JPH10290562A (ja) * | 1997-04-14 | 1998-10-27 | Toshiba Corp | ゲート抵抗器及びこれに接続される圧接型ｉｇｂｔ |
| US20060290689A1 (en) * | 2005-06-24 | 2006-12-28 | William Grant | Semiconductor half-bridge module with low inductance |
| JP4513770B2 (ja) * | 2006-02-28 | 2010-07-28 | 株式会社豊田自動織機 | 半導体装置 |
| JP5241344B2 (ja) * | 2008-06-30 | 2013-07-17 | 日立オートモティブシステムズ株式会社 | パワーモジュール及び電力変換装置 |
| US8237260B2 (en) * | 2008-11-26 | 2012-08-07 | Infineon Technologies Ag | Power semiconductor module with segmented base plate |
| US9147666B2 (en) | 2009-05-14 | 2015-09-29 | Rohm Co., Ltd. | Semiconductor device |
| DE102009046258B3 (de) * | 2009-10-30 | 2011-07-07 | Infineon Technologies AG, 85579 | Leistungshalbleitermodul und Verfahren zum Betrieb eines Leistungshalbleitermoduls |
| US9640617B2 (en) * | 2011-09-11 | 2017-05-02 | Cree, Inc. | High performance power module |
| CN103036394A (zh) * | 2011-09-29 | 2013-04-10 | 台达电子企业管理（上海）有限公司 | 一种用于中高压变频器的散热装置 |
| JP5879233B2 (ja) * | 2012-08-31 | 2016-03-08 | 日立オートモティブシステムズ株式会社 | パワー半導体モジュール |
| CN202917466U (zh) * | 2012-12-05 | 2013-05-01 | 齐齐哈尔齐力达电子有限公司 | 增加功率半导体模块爬电距离的装置 |
-
2015
- 2015-05-14 CN CN201580037680.7A patent/CN106537586B/zh active Active
- 2015-05-14 DE DE112015002272.4T patent/DE112015002272B4/de active Active
- 2015-05-14 WO PCT/US2015/030853 patent/WO2015175820A1/en not_active Ceased
- 2015-05-14 CN CN202010857239.6A patent/CN111900156B/zh active Active
- 2015-05-14 JP JP2016567562A patent/JP7000022B2/ja active Active
-
2020
- 2020-01-31 JP JP2020015417A patent/JP7056836B2/ja active Active
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