CN106537586B - 高电流、低切换损耗SiC功率模块 - Google Patents

高电流、低切换损耗SiC功率模块 Download PDF

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Publication number
CN106537586B
CN106537586B CN201580037680.7A CN201580037680A CN106537586B CN 106537586 B CN106537586 B CN 106537586B CN 201580037680 A CN201580037680 A CN 201580037680A CN 106537586 B CN106537586 B CN 106537586B
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Prior art keywords
power module
power
switching
transistor
diode
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CN201580037680.7A
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Chinese (zh)
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CN106537586A (zh
Inventor
姆里纳尔·K·达斯
亨利·林
马塞洛·舒普巴赫
约翰·威廉斯·帕尔穆尔
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Wofu Semiconductor Co ltd
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Cree Inc
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Priority claimed from US14/277,820 external-priority patent/US9373617B2/en
Application filed by Cree Inc filed Critical Cree Inc
Priority to CN202010857239.6A priority Critical patent/CN111900156B/zh
Publication of CN106537586A publication Critical patent/CN106537586A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07552—Controlling the environment, e.g. atmosphere composition or temperature changes in structures or sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/521—Structures or relative sizes of bond wires
    • H10W72/527—Multiple bond wires having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

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  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)
  • Junction Field-Effect Transistors (AREA)
CN201580037680.7A 2014-05-15 2015-05-14 高电流、低切换损耗SiC功率模块 Active CN106537586B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010857239.6A CN111900156B (zh) 2014-05-15 2015-05-14 高电流、低切换损耗SiC功率模块

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/277,820 US9373617B2 (en) 2011-09-11 2014-05-15 High current, low switching loss SiC power module
US14/277,820 2014-05-15
PCT/US2015/030853 WO2015175820A1 (en) 2014-05-15 2015-05-14 HIGH CURRENT, LOW SWITCHING LOSS SiC POWER MODULE

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202010857239.6A Division CN111900156B (zh) 2014-05-15 2015-05-14 高电流、低切换损耗SiC功率模块

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CN106537586A CN106537586A (zh) 2017-03-22
CN106537586B true CN106537586B (zh) 2020-09-11

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CN201580037680.7A Active CN106537586B (zh) 2014-05-15 2015-05-14 高电流、低切换损耗SiC功率模块
CN202010857239.6A Active CN111900156B (zh) 2014-05-15 2015-05-14 高电流、低切换损耗SiC功率模块

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JP (2) JP7000022B2 (https=)
CN (2) CN106537586B (https=)
DE (1) DE112015002272B4 (https=)
WO (1) WO2015175820A1 (https=)

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JP7210446B2 (ja) * 2016-11-25 2023-01-23 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト パワー半導体モジュール
US10749443B2 (en) 2017-01-13 2020-08-18 Cree Fayetteville, Inc. High power multilayer module having low inductance and fast switching for paralleling power devices
US11696417B2 (en) 2017-01-13 2023-07-04 Wolfspeed, Inc. High power multilayer module having low inductance and fast switching for paralleling power devices
US10917992B2 (en) 2017-01-13 2021-02-09 Cree Fayetteville, Inc. High power multilayer module having low inductance and fast switching for paralleling power devices
JP7163054B2 (ja) * 2017-04-20 2022-10-31 ローム株式会社 半導体装置
JP6893169B2 (ja) * 2017-12-26 2021-06-23 株式会社日立製作所 パワーモジュールおよび電力変換装置
CN108598074B (zh) * 2018-06-15 2024-02-02 华北电力大学 一种新型封装结构的功率模块
CN111245230B (zh) * 2018-11-29 2021-06-04 致茂电子(苏州)有限公司 半桥电路组件及切换式电源供应器
EP3909124A4 (en) * 2019-01-10 2022-10-26 Wolfspeed, Inc. HIGH POWER MULTI-LAYER LOW INDUCTANCE FAST SWITCHING MODULE FOR PARALLEL POWER DEVICES
US11418141B2 (en) * 2019-09-18 2022-08-16 Eaton Intelligent Power Limited Hybrid drive apparatus
CN112953168A (zh) * 2021-03-03 2021-06-11 中山市科力高氢能设备有限公司 一种开关管电路结构及电路系统
CN116918066A (zh) 2021-09-09 2023-10-20 富士电机株式会社 半导体模块
DE102021214521A1 (de) 2021-12-16 2023-06-22 Robert Bosch Gesellschaft mit beschränkter Haftung Vorrichtung, Halbbrücke und Verfahren zum Betreiben einer Vorrichtung
JP7750810B2 (ja) * 2022-09-12 2025-10-07 株式会社東芝 半導体装置
DE102022134658A1 (de) 2022-12-22 2024-06-27 Valeo Eautomotive Germany Gmbh Leistungsmodul, elektrischer Leistungswandler und elektrischer Antrieb für ein Transportmittel
CN221614839U (zh) * 2023-12-08 2024-08-27 上海理想汽车科技有限公司 功率半导体模块及半桥功率模块
CN119050103B (zh) * 2024-08-19 2025-09-23 复旦大学 一种功率模块的多层金属绝缘基板及其制备方法

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DE69726518T2 (de) 1996-09-06 2004-10-07 Hitachi Ltd Leistungshalbleiteranordnung in modularer Bauart
JPH10290562A (ja) * 1997-04-14 1998-10-27 Toshiba Corp ゲート抵抗器及びこれに接続される圧接型ｉｇｂｔ
US20060290689A1 (en) * 2005-06-24 2006-12-28 William Grant Semiconductor half-bridge module with low inductance
JP4513770B2 (ja) * 2006-02-28 2010-07-28 株式会社豊田自動織機 半導体装置
JP5241344B2 (ja) * 2008-06-30 2013-07-17 日立オートモティブシステムズ株式会社 パワーモジュール及び電力変換装置
US8237260B2 (en) * 2008-11-26 2012-08-07 Infineon Technologies Ag Power semiconductor module with segmented base plate
US9147666B2 (en) 2009-05-14 2015-09-29 Rohm Co., Ltd. Semiconductor device
DE102009046258B3 (de) * 2009-10-30 2011-07-07 Infineon Technologies AG, 85579 Leistungshalbleitermodul und Verfahren zum Betrieb eines Leistungshalbleitermoduls
US9640617B2 (en) * 2011-09-11 2017-05-02 Cree, Inc. High performance power module
CN103036394A (zh) * 2011-09-29 2013-04-10 台达电子企业管理（上海）有限公司 一种用于中高压变频器的散热装置
JP5879233B2 (ja) * 2012-08-31 2016-03-08 日立オートモティブシステムズ株式会社 パワー半導体モジュール
CN202917466U (zh) * 2012-12-05 2013-05-01 齐齐哈尔齐力达电子有限公司 增加功率半导体模块爬电距离的装置

Also Published As

Publication number Publication date
CN106537586A (zh) 2017-03-22
CN111900156A (zh) 2020-11-06
DE112015002272T5 (de) 2017-02-09
JP2017516312A (ja) 2017-06-15
JP7056836B2 (ja) 2022-04-19
JP7000022B2 (ja) 2022-01-19
DE112015002272B4 (de) 2024-07-25
CN111900156B (zh) 2025-02-14
WO2015175820A1 (en) 2015-11-19
JP2020098921A (ja) 2020-06-25

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