JP2017515885A5 - - Google Patents

Download PDF

Info

Publication number
JP2017515885A5
JP2017515885A5 JP2016575311A JP2016575311A JP2017515885A5 JP 2017515885 A5 JP2017515885 A5 JP 2017515885A5 JP 2016575311 A JP2016575311 A JP 2016575311A JP 2016575311 A JP2016575311 A JP 2016575311A JP 2017515885 A5 JP2017515885 A5 JP 2017515885A5
Authority
JP
Japan
Prior art keywords
butyl
hydrogen
trimethylsilyl
group
tert
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2016575311A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017515885A (ja
JP6471371B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2015/019604 external-priority patent/WO2015138390A1/en
Publication of JP2017515885A publication Critical patent/JP2017515885A/ja
Publication of JP2017515885A5 publication Critical patent/JP2017515885A5/ja
Application granted granted Critical
Publication of JP6471371B2 publication Critical patent/JP6471371B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2016575311A 2014-03-13 2015-03-10 モリブデンシルシクロペンタジエニル錯体、シリルアリル錯体、及び、薄膜堆積におけるその使用 Active JP6471371B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461952633P 2014-03-13 2014-03-13
US61/952,633 2014-03-13
PCT/US2015/019604 WO2015138390A1 (en) 2014-03-13 2015-03-10 Molybdenum silylcyclopentadienyl and silylallyl complexes and use thereof in thin film deposition

Publications (3)

Publication Number Publication Date
JP2017515885A JP2017515885A (ja) 2017-06-15
JP2017515885A5 true JP2017515885A5 (enExample) 2018-04-26
JP6471371B2 JP6471371B2 (ja) 2019-02-20

Family

ID=52829313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016575311A Active JP6471371B2 (ja) 2014-03-13 2015-03-10 モリブデンシルシクロペンタジエニル錯体、シリルアリル錯体、及び、薄膜堆積におけるその使用

Country Status (9)

Country Link
US (1) US10745430B2 (enExample)
EP (1) EP3116884B1 (enExample)
JP (1) JP6471371B2 (enExample)
KR (1) KR101819482B1 (enExample)
CN (1) CN106460170B (enExample)
IL (1) IL247719A (enExample)
SG (1) SG11201607587YA (enExample)
TW (1) TWI660958B (enExample)
WO (1) WO2015138390A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014193915A1 (en) 2013-05-28 2014-12-04 Sigma-Aldrich Co. Llc Manganese complexes and use thereof for preparing thin films
WO2018046391A1 (en) * 2016-09-09 2018-03-15 Merck Patent Gmbh Metal complexes containing allyl ligands
KR102727616B1 (ko) * 2016-10-07 2024-11-07 삼성전자주식회사 유기 금속 전구체, 이를 이용한 막 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US20180142345A1 (en) * 2016-11-23 2018-05-24 Entegris, Inc. Low temperature molybdenum film deposition utilizing boron nucleation layers
US10453744B2 (en) 2016-11-23 2019-10-22 Entegris, Inc. Low temperature molybdenum film deposition utilizing boron nucleation layers
JP7250803B2 (ja) * 2018-03-02 2023-04-03 エーエスエムエル ネザーランズ ビー.ブイ. 材料のパターン付き層を形成するための方法及び装置
KR102355507B1 (ko) 2018-11-14 2022-01-27 (주)디엔에프 몰리브덴 함유 박막의 제조방법 및 이로부터 제조된 몰리브덴함유 박막
JP7433132B2 (ja) * 2020-05-19 2024-02-19 東京エレクトロン株式会社 成膜方法及び成膜装置
CN111777649A (zh) * 2020-07-16 2020-10-16 苏州欣溪源新材料科技有限公司 二烷基二茂钼类配合物及其制备方法与应用
TWI878570B (zh) * 2020-07-20 2025-04-01 荷蘭商Asm Ip私人控股有限公司 用於沉積鉬層之方法及系統
KR20220011092A (ko) 2020-07-20 2022-01-27 에이에스엠 아이피 홀딩 비.브이. 전이 금속층을 포함하는 구조체를 형성하기 위한 방법 및 시스템
US11390638B1 (en) 2021-01-12 2022-07-19 Applied Materials, Inc. Molybdenum(VI) precursors for deposition of molybdenum films
US11459347B2 (en) 2021-01-12 2022-10-04 Applied Materials, Inc. Molybdenum(IV) and molybdenum(III) precursors for deposition of molybdenum films
US11434254B2 (en) 2021-01-12 2022-09-06 Applied Materials, Inc. Dinuclear molybdenum precursors for deposition of molybdenum-containing films
US11760768B2 (en) 2021-04-21 2023-09-19 Applied Materials, Inc. Molybdenum(0) precursors for deposition of molybdenum films
WO2025041856A1 (ja) * 2023-08-24 2025-02-27 ダイキン工業株式会社 金属錯体

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE613119A (enExample) * 1961-01-25
JPH07107190B2 (ja) 1984-03-30 1995-11-15 キヤノン株式会社 光化学気相成長方法
JPS63196243A (ja) 1987-02-09 1988-08-15 Hiroyuki Hamano 肉の削り節及びその製造方法
US5352488A (en) * 1993-05-14 1994-10-04 Syracuse University Chemical vapor deposition process employing metal pentadienyl complexes
US6491978B1 (en) * 2000-07-10 2002-12-10 Applied Materials, Inc. Deposition of CVD layers for copper metallization using novel metal organic chemical vapor deposition (MOCVD) precursors
TWI425110B (zh) * 2007-07-24 2014-02-01 Sigma Aldrich Co 以化學相沉積法製造含金屬薄膜之方法
US20090203928A1 (en) * 2008-01-24 2009-08-13 Thompson David M Organometallic compounds, processes for the preparation thereof and methods of use thereof
US20090199739A1 (en) * 2008-01-24 2009-08-13 Thompson David M Organometallic compounds, processes for the preparation thereof and methods of use thereof
US20090205538A1 (en) 2008-01-24 2009-08-20 Thompson David M Organometallic compounds, processes for the preparation thereof and methods of use thereof
DE102008036247A1 (de) 2008-08-04 2010-02-11 Merck Patent Gmbh Elektronische Vorrichtungen enthaltend Metallkomplexe
EP3150614B1 (en) 2009-08-07 2017-11-29 Sigma-Aldrich Co. LLC High molecular weight alkyl-allyl cobalttricarbonyl complexes and use thereof for preparing dielectric thin films
SG187920A1 (en) 2010-08-27 2013-03-28 Sigma Aldrich Co Llc Molybdenum (iv) amide precursors and use thereof in atomic layer deposition
SG11201404375PA (en) * 2012-01-26 2014-10-30 Sigma Aldrich Co Llc Molybdenum allyl complexes and use thereof in thin film deposition
US8530348B1 (en) * 2012-05-29 2013-09-10 Intermolecular, Inc. Integration of non-noble DRAM electrode
US9194040B2 (en) * 2012-07-25 2015-11-24 Applied Materials, Inc. Methods for producing nickel-containing films
WO2014193915A1 (en) 2013-05-28 2014-12-04 Sigma-Aldrich Co. Llc Manganese complexes and use thereof for preparing thin films
GB201318595D0 (en) 2013-10-21 2013-12-04 Zephyros Inc Improvements in or relating to laminates
US10221481B2 (en) 2013-10-28 2019-03-05 Merck Patent Gmbh Metal complexes containing amidoimine ligands

Similar Documents

Publication Publication Date Title
JP2017515885A5 (enExample)
JP2015510502A5 (enExample)
JP2016540038A5 (enExample)
JP6242026B2 (ja) Ald/cvdシリコン含有膜用のオルガノシラン前駆体
EP3095788A3 (en) Organoaminosilane precursors and methods for depositing films comprising same
CN106048557B (zh) 用于沉积碳掺杂含硅膜的组合物和方法
JP2012162804A5 (enExample)
JP2018510968A5 (enExample)
JP2014143416A5 (enExample)
JP2017092475A5 (enExample)
JP2014521123A5 (enExample)
JP2016046532A5 (enExample)
JP2015026849A5 (enExample)
JP2017014615A5 (enExample)
JP2004349684A5 (ja) ゲルマニウムを含有するフィルムを堆積させる方法、及び蒸気送達装置
JP2015146461A5 (enExample)
JP2011522120A5 (enExample)
JP2004308007A5 (enExample)
JP6302081B2 (ja) ゲルマニウムまたは酸化ゲルマニウムの原子層堆積
CN112969816A (zh) 用于高质量氧化硅薄膜的高温原子层沉积的组合物
IL275283B2 (en) Process for the generation of metal-containing films
JP2017504657A5 (enExample)
JP2010163685A5 (enExample)
TW202010746A (zh) 含錫之前驅物及沉積含錫薄膜之方法
JP2016181567A5 (ja) 半導体記憶装置及び半導体記憶装置の製造方法