SG11201607587YA - Molybdenum silylcyclopentadienyl and silylallyl complexes and use thereof in thin film deposition - Google Patents

Molybdenum silylcyclopentadienyl and silylallyl complexes and use thereof in thin film deposition

Info

Publication number
SG11201607587YA
SG11201607587YA SG11201607587YA SG11201607587YA SG11201607587YA SG 11201607587Y A SG11201607587Y A SG 11201607587YA SG 11201607587Y A SG11201607587Y A SG 11201607587YA SG 11201607587Y A SG11201607587Y A SG 11201607587YA SG 11201607587Y A SG11201607587Y A SG 11201607587YA
Authority
SG
Singapore
Prior art keywords
silylallyl
silylcyclopentadienyl
complexes
molybdenum
thin film
Prior art date
Application number
SG11201607587YA
Inventor
Shaun Garratt
Paul Williams
Original Assignee
Sigma Aldrich Co Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sigma Aldrich Co Llc filed Critical Sigma Aldrich Co Llc
Publication of SG11201607587YA publication Critical patent/SG11201607587YA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F19/00—Metal compounds according to more than one of main groups C07F1/00 - C07F17/00
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/0803—Compounds with Si-C or Si-Si linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)
SG11201607587YA 2014-03-13 2015-03-10 Molybdenum silylcyclopentadienyl and silylallyl complexes and use thereof in thin film deposition SG11201607587YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201461952633P 2014-03-13 2014-03-13
PCT/US2015/019604 WO2015138390A1 (en) 2014-03-13 2015-03-10 Molybdenum silylcyclopentadienyl and silylallyl complexes and use thereof in thin film deposition

Publications (1)

Publication Number Publication Date
SG11201607587YA true SG11201607587YA (en) 2016-10-28

Family

ID=52829313

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201607587YA SG11201607587YA (en) 2014-03-13 2015-03-10 Molybdenum silylcyclopentadienyl and silylallyl complexes and use thereof in thin film deposition

Country Status (9)

Country Link
US (1) US10745430B2 (en)
EP (1) EP3116884B1 (en)
JP (1) JP6471371B2 (en)
KR (1) KR101819482B1 (en)
CN (1) CN106460170B (en)
IL (1) IL247719A (en)
SG (1) SG11201607587YA (en)
TW (1) TWI660958B (en)
WO (1) WO2015138390A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014193915A1 (en) 2013-05-28 2014-12-04 Sigma-Aldrich Co. Llc Manganese complexes and use thereof for preparing thin films
KR102030104B1 (en) * 2016-09-09 2019-10-08 메르크 파텐트 게엠베하 Metal complexes containing allyl ligands
KR20180038823A (en) * 2016-10-07 2018-04-17 삼성전자주식회사 Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the same
US20180142345A1 (en) * 2016-11-23 2018-05-24 Entegris, Inc. Low temperature molybdenum film deposition utilizing boron nucleation layers
US10453744B2 (en) 2016-11-23 2019-10-22 Entegris, Inc. Low temperature molybdenum film deposition utilizing boron nucleation layers
KR102355507B1 (en) 2018-11-14 2022-01-27 (주)디엔에프 Method of manufacturing a molybdenum-containing thin film and molybdenum-containing thin film manufactured thereby
JP7433132B2 (en) * 2020-05-19 2024-02-19 東京エレクトロン株式会社 Film-forming method and film-forming equipment
CN111777649A (en) * 2020-07-16 2020-10-16 苏州欣溪源新材料科技有限公司 Dialkyl molybdenum dicyclopentadienyl complexes and preparation method and application thereof
US11390638B1 (en) 2021-01-12 2022-07-19 Applied Materials, Inc. Molybdenum(VI) precursors for deposition of molybdenum films
US11459347B2 (en) 2021-01-12 2022-10-04 Applied Materials, Inc. Molybdenum(IV) and molybdenum(III) precursors for deposition of molybdenum films
US11434254B2 (en) 2021-01-12 2022-09-06 Applied Materials, Inc. Dinuclear molybdenum precursors for deposition of molybdenum-containing films
US11760768B2 (en) 2021-04-21 2023-09-19 Applied Materials, Inc. Molybdenum(0) precursors for deposition of molybdenum films

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE613119A (en) * 1961-01-25
JPH07107190B2 (en) 1984-03-30 1995-11-15 キヤノン株式会社 Photochemical vapor deposition method
JPS63196243A (en) 1987-02-09 1988-08-15 Hiroyuki Hamano Flake of meat and production thereof
US5352488A (en) * 1993-05-14 1994-10-04 Syracuse University Chemical vapor deposition process employing metal pentadienyl complexes
US6491978B1 (en) * 2000-07-10 2002-12-10 Applied Materials, Inc. Deposition of CVD layers for copper metallization using novel metal organic chemical vapor deposition (MOCVD) precursors
TWI425110B (en) * 2007-07-24 2014-02-01 Sigma Aldrich Co Methods of forming thin metal-containing films by chemical phase deposition
US20090205968A1 (en) * 2008-01-24 2009-08-20 Thompson David M Organometallic compounds, processes for the preparation thereof and methods of use thereof
US20090205538A1 (en) 2008-01-24 2009-08-20 Thompson David M Organometallic compounds, processes for the preparation thereof and methods of use thereof
US20090203928A1 (en) * 2008-01-24 2009-08-13 Thompson David M Organometallic compounds, processes for the preparation thereof and methods of use thereof
DE102008036247A1 (en) 2008-08-04 2010-02-11 Merck Patent Gmbh Electronic devices containing metal complexes
EP2462148A1 (en) * 2009-08-07 2012-06-13 Sigma-Aldrich Co. LLC High molecular weight alkyl-allyl cobalttricarbonyl complexes and use thereof for preparing dielectric thin films
KR101847953B1 (en) 2010-08-27 2018-04-11 메르크 파텐트 게엠베하 Molybdenum(iv) amide precursors and use thereof in atomic layer deposition
JP6209168B2 (en) * 2012-01-26 2017-10-04 シグマ−アルドリッチ・カンパニー、エルエルシー Molybdenum allyl complex and its use in thin film deposition
US8530348B1 (en) * 2012-05-29 2013-09-10 Intermolecular, Inc. Integration of non-noble DRAM electrode
US9194040B2 (en) * 2012-07-25 2015-11-24 Applied Materials, Inc. Methods for producing nickel-containing films
WO2014193915A1 (en) 2013-05-28 2014-12-04 Sigma-Aldrich Co. Llc Manganese complexes and use thereof for preparing thin films
GB201318595D0 (en) 2013-10-21 2013-12-04 Zephyros Inc Improvements in or relating to laminates
CN106232611A (en) 2013-10-28 2016-12-14 赛孚思科技有限公司 Comprise the metal complex of amide groups imine ligands

Also Published As

Publication number Publication date
CN106460170B (en) 2019-12-06
EP3116884A1 (en) 2017-01-18
US20170121356A1 (en) 2017-05-04
TWI660958B (en) 2019-06-01
WO2015138390A1 (en) 2015-09-17
KR20160122273A (en) 2016-10-21
KR101819482B1 (en) 2018-01-17
CN106460170A (en) 2017-02-22
JP2017515885A (en) 2017-06-15
EP3116884B1 (en) 2017-08-16
TW201542570A (en) 2015-11-16
IL247719A (en) 2017-10-31
US10745430B2 (en) 2020-08-18
JP6471371B2 (en) 2019-02-20

Similar Documents

Publication Publication Date Title
SG11201607587YA (en) Molybdenum silylcyclopentadienyl and silylallyl complexes and use thereof in thin film deposition
EP3150670A4 (en) Copolycarbonate composition and article comprising same
TWI563112B (en) Molybdenum allyl complexes and use thereof in thin film deposition
EP3114634A4 (en) Transactions utilizing multiple digital wallets
EP3015526A4 (en) Halo-olefin composition and use therefor
EP3222614A4 (en) Biguanide compound and use thereof
EP3156227A4 (en) Transparent article with antifog film
PL2944668T3 (en) Thin film material for processing use
EP3138880A4 (en) Liquid composition and antibacterial article
GB201409063D0 (en) Coated polyester films
HK1215693A1 (en) Thin film deposition method and deposition device
EP3105053A4 (en) Thin nanocomposite film for use in an absorbent article
EP3202909A4 (en) Cancer specific-splicing ribozyme and use thereof
PL3194656T3 (en) Sealing-strip holder and use thereof
SG11201607105PA (en) Magnetic thin film and application device including magnetic thin film
EP3159436A4 (en) Multilayer plating film and article having multilayer plating film
IL246666B (en) Thin film coating method and the manufacturing line for its implementation
EP3171849A4 (en) Protein-repellent dental materials and use thereof in dental applications
EP3154488A4 (en) Absorbent article exhibiting controlled deformation in use
EP3141566A4 (en) Ethylene-1-hexene-1-butene terpolymer and film comprising same
EP3165630A4 (en) Hard coating film
SG10201501848TA (en) Film thickness measuring device and polishing device
PL3184244T3 (en) Abrasive film
EP3050702A4 (en) Coated film
EP3168002A4 (en) Polishing film