JP2017515647A - 基板上に導電性ナノ粒子を塗布するための装置 - Google Patents
基板上に導電性ナノ粒子を塗布するための装置 Download PDFInfo
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- 239000011370 conductive nanoparticle Substances 0.000 title 1
- 239000007788 liquid Substances 0.000 claims abstract description 50
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 43
- 239000002105 nanoparticle Substances 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 239000002923 metal particle Substances 0.000 claims abstract description 6
- 229920000642 polymer Polymers 0.000 claims description 23
- 150000002739 metals Chemical class 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
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- 238000000034 method Methods 0.000 description 5
- 239000011135 tin Substances 0.000 description 5
- 239000007769 metal material Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 231100000331 toxic Toxicity 0.000 description 3
- 230000002588 toxic effect Effects 0.000 description 3
- 241000282412 Homo Species 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- -1 epoxide compounds Chemical class 0.000 description 2
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- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
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- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
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Abstract
Description
本発明は、ウエハまたは他の基板上に金属材料または半導体材料のナノ粒子を塗布するための組立体に関する。
本発明の目的は、金属材料が実質的に損失することなく、健康を害する危険性を低減するように、ウエハまたは上述した種類の他の基板上に金属ナノ粒子を塗布するための組立体を提供することである。
(a)液体タンク(14、150)内に配置された金属片または半導体片(8、80)と、
(b)液体タンク(14、150)内の液体中に配置された金属片または半導体片からナノ粒子を除去するためのレーザ(13)と、
(c)金属粒子を含有する液体を基板上に塗布するための手段(100)とを備えることによって、本発明の目的を達成する。
図1は、金属ナノ粒子を生成するための組立体を示す概略図である。この組立体は、例えば、数字1で示されるエポキシド化合物などの液状ポリマを貯蔵するタンク2を備える。数字20で示され、ポリマの密度を検出するためのセンサが、タンク2に設けられている。液状ポリマは、ポンプ17によって、パイプライン18を介して矢印の方向に輸送される。パイプライン18は、チャンバ14に連結される。金属片または半導体片8が、チャンバ14の底部に配置されている。用途に応じて、金属片または半導体片8は、金(Au)、銀(Ag)、銅(Cu)、パラジウム(Pd)、アルミニウム(Al)、ニッケル(Ni)、スズ(Sn)、またはこれらの金属の合金から製造されてもよく、シリコン系半導体材料から製造されてもよい。金属片または半導体片8の表面は、ポリマに囲まれる。チャンバ14の上面は、ガラス板によって封閉される。走査システム13を備えるレーザは、チャンバ14の上方に配置されている。レーザ光12は、チャンバ14のガラス板を介して、金属片または半導体片8上に向けられる。金属粒子(ナノ粒子)は、金属片または半導体片8の表面から除去される。このような除去工程によって除去されたナノ粒子は、ポリマ液に収容される。
液体内で行われるレーザアブレーションは、DE 10 2010 018 073 A1、DE 10 2010 055 404 A1およびJP 2006 612 2845に記載されている。
Claims (10)
- ウエハまたは他の基板(110)上に金属材料または半導体材料からなるナノ粒子を塗布するための組立体であって、
(a)液体タンク(14、150)内に配置された金属片または半導体片(8、80)と、
(b)前記液体タンク(14、150)内の液体中に配置された金属片または半導体片からナノ粒子を除去するためのレーザ(13)と、
(c)金属粒子を含有する液体を基板上に塗布するための手段(100)とを備えることを特徴とする、組立体。 - 前記液体(1、10)は、硬化性ポリマまたは他の硬化性プラスチック材料であることを特徴とする、請求項1に記載の組立体。
- 前記金属(8、80)は、金、銀、銅、パラジウム、アルミニウム、ニッケル、スズ、これらの金属の合金またはシリコン系半導体であることを特徴とする、請求項2に記載の組立体。
- 前記金属片または半導体片(8、80)からナノ粒子を除去する領域に液流を生成するための液流生成手段(17、30、50)を備えることを特徴とする、請求項1から3のいずれか1項に記載の組立体。
- 前記液流生成手段は、ポンプ(17)であることを特徴とする、請求項4に記載の組立体。
- 前記液流生成手段は、小径を有する通路(60)を介して前記液体を圧送する超音波ハンマ(50)を含むことを特徴とする、請求項4に記載の組立体。
- ナノ粒子を含む液体を前記基板(110)上に塗布するための噴出孔(100)を含むことを特徴とする、請求項1から6のいずれか1項に記載の組立体。
- 前記金属片または半導体片(80)は、前記噴出孔(100)前面の領域に配置されていることを特徴とする、請求項7に記載の組立体。
- 前記噴出孔(100)は、封閉タンク(150)に一体化され、
前記タンクは、加圧された液体が前記タンクに進入する液体入口(60)を備えることを特徴とする、請求項8に記載の組立体。 - 前記タンクは、ガラス板または別の透明カバーによって、前記レーザ側で封閉されることを特徴とする、請求項1から9のいずれか1項に記載の組立体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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DE102014101588.6A DE102014101588B4 (de) | 2014-02-10 | 2014-02-10 | Anordnung zum Aufbringen von leitenden Nanopartikeln auf ein Substrat |
DE102014101588.6 | 2014-02-10 | ||
PCT/EP2015/051701 WO2015117872A1 (de) | 2014-02-10 | 2015-01-28 | Anordnung zum aufbringen von leitenden nanopartikeln auf ein substrat |
Publications (3)
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JP2017515647A true JP2017515647A (ja) | 2017-06-15 |
JP2017515647A5 JP2017515647A5 (ja) | 2018-02-22 |
JP6596434B2 JP6596434B2 (ja) | 2019-10-23 |
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JP2016548189A Active JP6596434B2 (ja) | 2014-02-10 | 2015-01-28 | 基板上に導電性ナノ粒子を塗布するための装置 |
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US (1) | US10196263B2 (ja) |
EP (1) | EP3105365B1 (ja) |
JP (1) | JP6596434B2 (ja) |
KR (1) | KR102328242B1 (ja) |
CN (1) | CN105960299B (ja) |
DE (1) | DE102014101588B4 (ja) |
WO (1) | WO2015117872A1 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006054212A (ja) * | 2004-08-09 | 2006-02-23 | Matsushita Electric Ind Co Ltd | 基板および電子部品組立体ならびに電子部品組立体の製造方法 |
JP2006122845A (ja) * | 2004-10-29 | 2006-05-18 | Nara Kikai Seisakusho:Kk | 液相レーザーアブレーション装置 |
US20070029185A1 (en) * | 2005-08-08 | 2007-02-08 | Hon Hai Precision Industry Co., Ltd. | Apparatus for producing nanoparticles |
JP2009525891A (ja) * | 2005-12-05 | 2009-07-16 | スリーエム イノベイティブ プロパティズ カンパニー | 超吸収ナノ粒子組成物 |
JP2013519505A (ja) * | 2010-02-10 | 2013-05-30 | イムラ アメリカ インコーポレイテッド | パルスレーザ溶発によるナノ粒子溶液の製造 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060062930A1 (en) * | 2002-05-08 | 2006-03-23 | Devendra Kumar | Plasma-assisted carburizing |
US7306823B2 (en) * | 2004-09-18 | 2007-12-11 | Nanosolar, Inc. | Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells |
DE102005016940B4 (de) * | 2005-04-12 | 2007-03-15 | Eos Gmbh Electro Optical Systems | Vorrichtung und Verfahren zum Auftragen von Schichten eines pulverförmigen Materials auf eine Oberfläche |
TWI431380B (zh) * | 2006-05-12 | 2014-03-21 | Photon Dynamics Inc | 沉積修復設備及方法 |
DE102007005817A1 (de) | 2007-02-06 | 2008-08-14 | Laser Zentrum Hannover E.V. | Biologisch wirksame Vorrichtung und Verfahren zu ihrer Herstellung |
DE102010018073A1 (de) | 2010-04-20 | 2011-10-20 | Aesculap Ag | Copolymermodifizierte Nanopartikel, insbesondere zur Verwendung bei medizintechnischen Gegenständen |
CN102259187A (zh) * | 2011-04-01 | 2011-11-30 | 周明 | 一种高性能复合轧辊激光喷射成形制造与修复方法和装备 |
FR2974021B1 (fr) * | 2011-04-18 | 2013-04-05 | Commissariat Energie Atomique | Procede pour la preparation de particules metalliques |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006054212A (ja) * | 2004-08-09 | 2006-02-23 | Matsushita Electric Ind Co Ltd | 基板および電子部品組立体ならびに電子部品組立体の製造方法 |
JP2006122845A (ja) * | 2004-10-29 | 2006-05-18 | Nara Kikai Seisakusho:Kk | 液相レーザーアブレーション装置 |
US20070029185A1 (en) * | 2005-08-08 | 2007-02-08 | Hon Hai Precision Industry Co., Ltd. | Apparatus for producing nanoparticles |
JP2009525891A (ja) * | 2005-12-05 | 2009-07-16 | スリーエム イノベイティブ プロパティズ カンパニー | 超吸収ナノ粒子組成物 |
JP2013519505A (ja) * | 2010-02-10 | 2013-05-30 | イムラ アメリカ インコーポレイテッド | パルスレーザ溶発によるナノ粒子溶液の製造 |
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DE102014101588A1 (de) | 2015-08-13 |
KR20160124745A (ko) | 2016-10-28 |
US10196263B2 (en) | 2019-02-05 |
JP6596434B2 (ja) | 2019-10-23 |
WO2015117872A1 (de) | 2015-08-13 |
KR102328242B1 (ko) | 2021-11-17 |
DE102014101588B4 (de) | 2022-06-02 |
CN105960299A (zh) | 2016-09-21 |
EP3105365B1 (de) | 2019-05-01 |
US20160346842A1 (en) | 2016-12-01 |
EP3105365A1 (de) | 2016-12-21 |
CN105960299B (zh) | 2019-05-14 |
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