CN105960299A - 用于施加传导的纳米颗粒到基质上的装置 - Google Patents

用于施加传导的纳米颗粒到基质上的装置 Download PDF

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CN105960299A
CN105960299A CN201580007787.7A CN201580007787A CN105960299A CN 105960299 A CN105960299 A CN 105960299A CN 201580007787 A CN201580007787 A CN 201580007787A CN 105960299 A CN105960299 A CN 105960299A
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M.H.阿兹达斯特
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Abstract

用于施加金属的纳米颗粒到晶片或者其它基质上的装置，其特征在于具有在液体储存器中布置的金属‑或者半导体件；用于在液体储存器中在液体内部从金属‑或者半导体件中去除纳米颗粒的激光器或微粒辐射器；以及用于施加包含去除的金属颗粒的液体到基质上的机构。

Description

用于施加传导的纳米颗粒到基质上的装置
技术领域
本发明涉及一种用于施加金属的或者半导体材料的纳米颗粒到晶片或者其它基质上的装置。
背景技术
例如在摄影中，金属的纳米颗粒作为晶种（Keime）被施加到基质上。在施加另外的金属的材料时，在这些晶种处能够生长有金属的导体电路。存在有不同的用于施加金属的纳米颗粒的方法。常见的方法是气相喷镀。
典型地，具有特别的特性的金属得到应用。属于这些金属的有金、钯、铜、铝、镍、银和锡。这些金属昂贵且或多或少有毒。在气相喷镀这样的金属时存在材料丢失的危险。此外，存在金属被呼吸入的或者到达与金属发生接触的人的皮肤上的危险。那么对于健康有危险。
发明内容
本发明的任务是，提出一种开头提到的类型的、用于施加金属的纳米颗粒到晶片或者其它基质上的装置，其中实际上无金属的材料丢失且对于健康的危险降低。
根据本发明地，该任务通过如下来解决：
(a) 在液体储存器中布置的金属或者半导体件；
(b) 用于从在液体储存器中在液体内部去除金属或者半导体件的纳米颗粒的激光器；以及
(c) 用于施加包含去除的金属颗粒的液体到基质上的机构。
对于这样的装置，在液体内部的金属或者半导体件的纳米颗粒利用激光器或者微粒辐射器去除。其因此不会自由地飞来飞去和丢失。不存在有毒的金属蒸汽。材料消耗较小。纳米颗粒保留在液体中且与液体共同地涂覆到基质上。
在本发明的优选的设计方案中，液体由可硬化的聚合体或者其它可硬化的塑料形成。对于合适的聚合体的示例是环氧化合物或者苯并环丁烯。这样的材料是用于在摄影中应用的感光的材料。其能够容易地腐蚀除去。在此不仅能够主动地（positive）曝光而且也能够被动地（negative）曝光。聚合体不仅仅负责使金属颗粒在涂覆时不远离基质表面跳起，还负责对于紧接着待涂覆的部件的良好附着。
优选地，金属是金、银、铜、钯、铝、镍、锡或者这些金属的合金。这些金属是好的导体且因此良好地合适于在制造半导体产品、例如对于晶片和其它基质时使用。理所当然的是，如果这被应用情况所要求，那么也能应用其它金属。
优选地，所述装置具有产生流动的机构用于在如下的区域中产生液体流动，在该区域中纳米颗粒从金属或者半导体件处去除。产生流动的机构能够由泵形成。产生流动的机构还能够包括超声锤，该超声锤挤压液体通过具有减小的直径的通道。通过所述产生流动的机构确保在激光辐射相同的情况下纳米颗粒的含量在液体中均匀地分布。
在本发明的一设计方案中，设置有用于涂覆包含纳米颗粒的液体到基质上的喷嘴。所述液体利用喷嘴能够均匀地薄地且很有针对性地涂覆到基质上。
在本发明的一特别优选的设计方案中，金属或者半导体件布置在喷嘴之前的区域中。纳米颗粒因此直接地在从金属或者半导体件处去除之后通过喷嘴传导且涂覆到基质上。所述纳米颗粒不会在所述装置内部附着或者积聚。
在本发明的另一设计方案中，喷嘴模制到封闭的储存器处，其中，该储存器具有液体入口，处于压力之下的液体通过该液体入口进入到所述储存器中。储存器能够尤其在激光器侧利用玻璃板或其它透明的遮盖部封闭。激光穿过该遮盖部进入到储存器中。因为液体不那么可压缩，所以每次施加到液体上的压力导致液体通过喷嘴朝外排出。
附图说明
本发明的设计方案是从属权利要求的主题。实施例在下面参考所附的图来更详细地阐释。
图1是第一实施例的示意性图示；
图2是第二实施例的示意性图示。
具体实施方式
图1是用于产生金属的纳米颗粒的装置的示意性图示。该装置具有储存器2，在其中设置有以1来标记的、液态的聚合体、例如环氧化合物。在储存器2处设置的、用于检测聚合体密度的传感器以20来标记。聚合体物利用泵17沿着箭头方向通过管路18来运送。管路18通到腔室14中。在腔室14的底部处布置有金属-或者半导体件8。根据应用情况，金属-或半导体件8包括金（Au）、银（Ag）、铜（Cu）、钯（Pd）、铝（Al）、镍（Ni）、锡（Sn）或者这些金属的合金。此外存在应用硅基的半导体材料的可能。金属或者半导体件8的表面由聚合体在周围冲刷。腔室14的上侧面以玻璃板封闭。在腔室14上方布置有具有扫描系统13的激光器。激光器射线12穿过腔室14的玻璃板指向到金属或者半导体件8上。利用激光器射线12使金属颗粒（纳米颗粒）从金属或者半导体件8的表面去除。通过烧蚀过程去除的纳米颗粒由聚合体液体接收。
腔室14在激光器射线12的区域中具有减小的厚度。由此一方面实现激光器射线12仅稍微在聚合体处被吸收。另一方面实现提高的流动速度。去除的金属颗粒因此不会附着或者下沉。
聚合体液体在接收有去除的颗粒的情况下通过泵17通过输出管路16传导至第二储存器22。具有纳米颗粒21的聚合体聚集在第二储存器中且在那供支配用于另外的应用。在储存器22中的传感器19求得在储存器中的纳米颗粒的密度。
源自储存器22的、具有纳米颗粒的聚合体液体能够例如使用于在晶片表面以及基质表面上重新布线。在该实施例中，具有纳米颗粒的聚合体液体能够例如通过旋涂（spincoating）涂覆到基质上。所述材料能够紧接着利用蒙片（Maske）摄影地（photolitographisch）结构化。在结构中间空间中的硬化的聚合体能够以常见的方式通过腐蚀或者洗涤移除。以此方式实现很精细的结构。
图2显示了一种装置，在其中具有纳米颗粒的聚合体液体直接涂覆到基质上。聚合体液体10存在于储存器200中。在储存器200的下部的端部处设置有出口。该出口通入细长的腔室40中。在腔室40中有锤50。锤50利用超声发生器30沿着箭头52的方向往复运动。腔室40通过狭窄的通道60与腔室150连接。腔室150在下部的端部处锥状地逐渐变细。在那模制有毛细管或者喷嘴100。在喷嘴100下方布置有基质110。基质110或者喷嘴100或者二者如下地是可运动的，使得从喷嘴中排出的材料在基质上涂覆到的期望的部位上。
在腔室150的锥状的下部的区域中布置有金属或者半导体件80。腔室150在上方以玻璃板140封闭。激光能够利用快速的扫描器、例如基于声光的调制器130在箭头132的方向上沿着x和y方向运动。激光穿过玻璃板140和聚合体150辐射到金属或者半导体件80上。在那纳米颗粒90借助于激光烧蚀被去除。该去除的纳米颗粒90由聚合体接收。如果锤50在示图中朝左运动，那么无纳米颗粒的、新鲜的聚合体被挤压通过通道60。由此在腔室150中产生压力。具有纳米颗粒90的聚合体液体通过喷嘴100作为液滴220朝外放出且施加到基质110上。施加到基质110上的聚合体紧接着硬化。该实施例优点在于：导体电路能够无蒙片地和摄影的方法地来制造。纳米颗粒利用聚合体直接涂覆到基质上。
之前所述的装置已详细地说明。但理所当然的是，这对于专利的保护范围不应是限制性的，该保护范围仅仅通过权利要求来确定。可使用的、许多备选的和相同作用的手段对于本领域专业人员是常用的，而不偏离本发明构思。尤其可个别地改变几何结构的布置、材料、尺寸和量，而不偏离本发明构思。

Claims (10)

1.用于施加金属的或者半导体材料的纳米颗粒到晶片或者其它基质（110）上的装置，其特征在于具有
(a) 在液体储存器（14、150）中布置的金属-或者半导体件（8、80）；
(b) 用于在所述液体储存器（14、150）中在液体内部从所述金属-或者半导体件中去除纳米颗粒的激光器（13）；以及
(c) 用于施加包含被去除的金属颗粒的液体到所述基质上的机构（100）。
2.根据权利要求1所述的装置，其特征在于，所述液体（1、10）由能够硬化的聚合体或者其它能够硬化的塑料形成。
3.根据权利要求2所述的装置，其特征在于，所述金属（8、80）是金、银、铜、钯、铝、镍、锡、以上金属的合金或者硅基的半导体。
4.根据上述权利要求中任一项所述的装置，其特征在于，设置有产生流动的机构（17、30、50）用于在如下的区域中产生液体流动，在所述区域中所述纳米颗粒从所述金属-或者半导体件（8、80）中去除。
5.根据权利要求4所述的装置，其特征在于，所述产生流动的机构由泵（17）形成。
6.根据权利要求4所述的装置，其特征在于，所述产生流动的机构包括超声锤（50），所述超声锤挤压所述液体通过具有减小的直径的通道（60）。
7.根据上述权利要求中任一项所述的装置，其特征在于，设置有喷嘴（100）用于涂覆所述包含所述纳米颗粒的液体到所述基质（110）上。
8.根据权利要求7所述的装置，其特征在于，所述金属-或者半导体件（80）布置在所述喷嘴（100）之前的区域中。
9.根据权利要求8所述的装置，其特征在于，所述喷嘴（100）模制到封闭的储存器（150）处，其中，所述储存器具有液体入口（60），处于压力之下的液体通过所述液体入口进入到所述储存器中。
10.根据上述权利要求中任一项所述的装置，其特征在于，所述储存器在激光器侧利用玻璃板或其它透明的遮盖部封闭。
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006122845A (ja) * 2004-10-29 2006-05-18 Nara Kikai Seisakusho:Kk 液相レーザーアブレーション装置
US7306823B2 (en) * 2004-09-18 2007-12-11 Nanosolar, Inc. Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells
CN101090787A (zh) * 2005-04-12 2007-12-19 Eos有限公司电镀光纤系统 用于将粉末材料层涂覆到表面上的装置和方法
CN102259187A (zh) * 2011-04-01 2011-11-30 周明 一种高性能复合轧辊激光喷射成形制造与修复方法和装备
CN102781660A (zh) * 2010-02-10 2012-11-14 亿目朗美国股份有限公司 基于脉冲激光烧蚀制造纳米颗粒溶液
CN103492107A (zh) * 2011-04-18 2014-01-01 原子能与替代能源委员会 用于制备金属颗粒的方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060062930A1 (en) * 2002-05-08 2006-03-23 Devendra Kumar Plasma-assisted carburizing
JP4164052B2 (ja) * 2004-08-09 2008-10-08 松下電器産業株式会社 電子部品組立体の製造方法及び表示パネル組立体の製造方法
CN100467118C (zh) 2005-08-08 2009-03-11 鸿富锦精密工业（深圳）有限公司 纳米粒子制备装置
CN101326053A (zh) * 2005-12-05 2008-12-17 3M创新有限公司 超吸收性纳米粒子组合物
TWI431380B (zh) * 2006-05-12 2014-03-21 Photon Dynamics Inc 沉積修復設備及方法
DE102007005817A1 (de) 2007-02-06 2008-08-14 Laser Zentrum Hannover E.V. Biologisch wirksame Vorrichtung und Verfahren zu ihrer Herstellung
DE102010018073A1 (de) 2010-04-20 2011-10-20 Aesculap Ag Copolymermodifizierte Nanopartikel, insbesondere zur Verwendung bei medizintechnischen Gegenständen

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7306823B2 (en) * 2004-09-18 2007-12-11 Nanosolar, Inc. Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells
JP2006122845A (ja) * 2004-10-29 2006-05-18 Nara Kikai Seisakusho:Kk 液相レーザーアブレーション装置
CN101090787A (zh) * 2005-04-12 2007-12-19 Eos有限公司电镀光纤系统 用于将粉末材料层涂覆到表面上的装置和方法
CN102781660A (zh) * 2010-02-10 2012-11-14 亿目朗美国股份有限公司 基于脉冲激光烧蚀制造纳米颗粒溶液
CN102259187A (zh) * 2011-04-01 2011-11-30 周明 一种高性能复合轧辊激光喷射成形制造与修复方法和装备
CN103492107A (zh) * 2011-04-18 2014-01-01 原子能与替代能源委员会 用于制备金属颗粒的方法

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