CN105895604B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN105895604B
CN105895604B CN201510448508.2A CN201510448508A CN105895604B CN 105895604 B CN105895604 B CN 105895604B CN 201510448508 A CN201510448508 A CN 201510448508A CN 105895604 B CN105895604 B CN 105895604B
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Prior art keywords
metal layer
lower metal
ball
layer
cap body
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CN201510448508.2A
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CN105895604A (zh
Inventor
黄春福
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Chipmos Technologies Inc
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Chipmos Technologies Bermuda Ltd
Chipmos Technologies Inc
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Abstract

本发明之一实施例提供一种半导体装置，该半导体装置包括一基板，其中该基板包含一接垫；以及一钝化层配置于该基板上方，其中该钝化层系局部覆盖该接垫：一球下金属层，配置于该基板上方，其中该球下金属层系与该接垫耦合；一导电凸块，配置于该球下金属层之上方，其中该导电凸块，包含：一柱体，系连接该球下金属层；一帽体，配置于该柱体的顶部，其中，该帽体包含一底部截面积系大于该柱体的截面积，该帽体之底部距离该钝化层之上表面具有一间隔；以及一焊球，系包覆该导电凸块。

Description

半导体装置
技术领域
本发明涉及一种半导体装置。
背景技术
随着半导体科技的日新月异，电子产业经历了由厚膜至薄膜的快速变革，以及从不停歇的微小化制程改良。半导体封装是一门建立半导体元件之间链接以形成一电路的科学，也因应半导体与电子产业的不断进步而快速发展。
在半导体封装制程中，焊球与芯片或其他元件的接合须有一定的可靠度，以避免在完成封装后产生电性失效或故障。在大部分的情形下，主要是附着在如焊垫或导电柱上，然而，在实际状况，却常发生焊球脱落或无法有效附着的情形而导致良率无法有效地提升。
因此，如何增加焊球与半导体元件间的附着力以提高其可靠度实为一重要的课题。
发明内容
本发明的一实施例提供一种半导体装置，该半导体装置包括一基板，其中该基板包含一接垫；以及一钝化层配置于该基板上方，其中该钝化层系局部覆盖该接垫：一球下金属层，配置于该基板上方，其中该球下金属层系与该接垫耦合；一导电凸块，配置于该球下金属层之上方，其中该导电凸块，包含：一柱体，系连接该球下金属层；一帽体，配置于该柱体的顶部，其中，该帽体包含一底部截面积系大于该柱体的截面积，该帽体之底部距离该钝化层之上表面具有一间隔；以及一焊球，系包覆该导电凸块。
在一实施例中，该帽体包含一底部宽度系大于该球下金属层的宽度。
在一实施例中，该焊球系包覆该柱体之侧壁及该间隔。
在一实施例中，该帽体之顶面系为一曲面，该帽体的中心部分之厚度大于该帽体的边缘部分之厚度。
在一实施例中，该导电凸块之材质选自于金、铜、镍、银或其合金。
在一实施例中，该球下金属层之材质选自为钛/铜、钛/钨/金或含银合金。
本发明之一实施例提供一种半导体装置，该半导体装置包括一基板，其中该基板包含一接垫；以及一钝化层配置于该基板上方并暴露出该接垫之部份：一重布层配置于该钝化层上，并与该接垫之该部份耦合；一保护层配置于该重布层上，并且暴露出该重布层之部分；一球下金属层配置于该保护层上，其中该球下金属层系与该该重布层之该部分耦合；一导电凸块，配置于该球下金属层之上方，其中该导电凸块，包含：一柱体，系连接该球下金属层；一帽体，配置于该柱体的顶部，其中，该帽体包含一底部截面积系大于该柱体的截面积，且该帽体之底部距离该保护层之上表面具有一间隔；以及一焊球，系包覆该导电凸块。前文已颇为广泛地概述本发明之特征及技术优势以便可更好地理解随后的本发明之详细描述。本发明之额外特征及优势将在下文中加以描述，且形成本发明之申请专利范围的主题。熟习此项技术者应了解，所揭示之概念及特定实施例可易于用作修改或设计其他结构或程序以用于进行本发明之同样目的之基础。熟习此项技术者亦应认识到，此等等效构造并不脱离如随附申请专利范围中所阐明之本发明之精神及范畴。
附图说明
由以下详细说明与附随图式得以最佳了解本申请案揭示内容之各方面。注意，根据产业之标准实施方式，各种特征并非依比例绘示。实际上，为了清楚讨论，可任意增大或缩小各种特征的尺寸。
图1A-1B系根据本申请案揭示内容之一些实施例说明半导体装置之横切面图。
图2系根据本申请案揭示内容之一些实施例说明半导体装置之横切面图。
图3A-3B系根据本申请案揭示内容之一些实施例说明制造半导体装置之方法的横切面图。
上文已经概略地叙述本揭露之技术特征及优点，俾使下文之本揭露详细描述得以获得较佳了解。构成本揭露之申请专利范围标的之其它技术特征及优点将描述于下文。本揭露所属技术领域中具有通常知识者应可了解，下文揭示之概念与特定实施例可作为基础而相当轻易地予以修改或设计其它结构或制程而实现与本揭露相同之目的。本揭露所属技术领域中具有通常知识者亦应可了解，这类等效的建构并无法脱离后附之申请专利范围所提出之本揭露的精神和范围。
具体实施方式
以下揭示内容提供许多不同的实施方式或范例，用于实施本申请案之不同特征。元件与配置的特定范例之描述如下，以简化本申请案之揭示内容。当然，这些仅为范例，并非用于限制本申请案。例如，以下描述在第二特征上或上方形成第一特征可包含形成直接接触的第一与第二特征之实施方式，亦可包含在该第一与第二特征之间形成其他特征的实施方式，因而该第一与第二特征并非直接接触。此外，本申请案可在不同范例中重复元件符号与/或字母。此重复系为了简化与清楚之目的，而非支配不同实施方式与/或所讨论架构之间的关系。
再者，本申请案可使用空间对应语词，例如「之下」、「低于」、「较低」、「高于」、「较高」等类似语词之简单说明，以描述图式中一元件或特征与另一元件或特征的关系。空间对应语词系用以包括除了图式中描述的位向之外，装置于使用或操作中之不同位向。装置或可被定位(旋转90度或是其他位向)，并且可相应解释本申请案使用的空间对应描述。
随着及元件的微缩，如何增加焊球与半导体元件间的附着力以提高其可靠度实为一重要的课题。其附着关系例如焊球附着于球下金属层(underbump metallization，UBM)上方、焊球附着于重分布层(redistribution layer,RDL)上方或是焊球附着于导电柱上方。现有技术中，焊球底部可形成一球下金属层，使锡球坐落于该球下金属层上方，通常的状况下，焊球底部侧壁与球下金属层的边缘侧壁切齐，或是焊球底部与球下金属层的接触面积小于球下金属层的面积，使得球下金属层的边缘侧壁或是部分球下金属层仍外露于锡球外部。如此一来，由于焊球仅依靠金属接合坐落于球下金属层上，仍有脱落焊球的可能性。
本申请案提供一种利用球下金属层的边缘延伸至焊球内部，藉以使焊球可以完全包覆球下金属层，使得焊球的结构更加稳固不容易掉球，可以达到增加结合稳固性的效果。
图1A系依据本发明部分实施例所载之半导体结构100。半导体结构100系包含基板10、接垫20、钝化层30、球下金属层40、导电凸块50、焊球60，其中：
基板10，为一半导体材料，例如是硅晶圆、玻璃、陶瓷或其它类似之半导体材料，该基板10具有一主动面及一与其相对之被动面；接垫20系设置于半导体基板10之主动面上，该接垫20之材质较佳可选自于金、银、铜、铝或其合金等材料，以作为半导体基板10与外界电性传导的接点。钝化层30系设置于半导体基板10之主动面上，并相对该接垫20位置定义出一开孔31以暴露出接垫20之一部分。
球下金属层40设置在暴露于开孔31中之接垫20上与接垫20形成电连接，其中，该球下金属层40包括至少两层金属层(未绘示)，即黏接层例如钛层、铜层以及镍层；与晶种层位于该黏接层上且由金、铜、镍、银或其合金组成。另有许多合适的球下金属层40材料与层次配置，例如钛/铜、钛/钨/金、含银合金、铬/铬铜合金/铜/金、钛/钛钨/铜之配置或是铜/镍/金之配置。球下金属层40系由金属溅镀程序、物理或化学气相沉积程序形成。之后，在球下金属层40的上方形成导电凸块50，导电凸块50包含一柱体51与一帽体52。柱体51连接底下的球下金属层40且支撑上方的帽体52。进一步而言，柱体51的宽度等于球下金属层40的宽度(两侧壁41之间距离)，使得柱体51的侧壁57与球下金属层40的侧壁41切齐。此外，帽体52底部截面积(以切线AA'为基准)大于柱体51的截面积，于其一可行之实施例中，该柱体51截面积约为帽体52底部截面积5％-25％，且帽体52具有一厚度54，厚度54系量自帽体52之顶面53最高点至帽体52之底部58的厚度数值，厚度54为高度H(帽体52最顶部至钝化层30上表面的高度)的约10％-40％。从侧面观之，帽体52之底部58的宽度(两侧壁55之间的距离)大于球下金属层40的宽度(两侧壁41之间的距离)，等同帽体52的边缘水平突出于柱体51之外，使得帽体52的底部58与钝化层30上表面之间产生一间隔56。
最后，于导电凸块50上设置一焊球60，焊球60之材料例如是金/锡或锡/银等材料，该焊球60包覆了导电凸块50的顶面53、帽体52之侧壁55、间隔56以及柱体51之侧壁57，其中，焊球60不但包覆导电凸块50整体且进一步包覆球下金属层40的侧壁41。更进一步来说，导电凸块50之间隔56的形成使得部分焊球60材料能填充于间隔56中，当焊球60回焊并且固化后，焊球60可完全包覆住间隔56，如同焊球材料嵌入间隔56中，间隔56与帽体52形成如同一卡榫或倒勾的装置，系利用结构力学方式增加焊球60与导电凸块50的附着力，藉以防止焊球60自导电凸块50上脱落。此外，水平突出的帽体52相较于原本单纯仅球下金属层的连接方式具有更大的接触面积，焊球60与导电凸块50之间的接触面积增加，使得有效地提升两者之间的附着力。间隔56的高度(由帽体52之底部58至钝化层30上表面)约为5-9微米，系约为高度H(帽体52最顶部至钝化层30上表面的高度)的60％-90％。在一实施例中，顶面53系为一平面，故顶面53具有同一高度；另一实施例中，顶面53为一曲面，例如一凹面(该帽体52的中心部分之厚度小于该帽体52的边缘部分之厚度)或一凸面(该帽体52的中心部分之厚度大于该帽体52的边缘部分之厚度)；另一实施例中，顶面53为一粗糙面，非平面状态的顶面53能增加焊球60与导电凸块50之间的接触面积，进而增加焊球60与导电凸块50的黏着程度。
藉由上述导电凸块50之柱体51与帽体52的比例，同时让焊球60包覆间隔56、球下金属层40的侧壁41与导电凸块50整体，使得焊球60与导电凸块50之间的接触面积增加，有效地提升两者之间的附着力，能防止掉球的状况。
值得一提的是，如图1B所示，导电凸块50的形成方式可在沉积球下金属层40后，成长一图案化光阻层62，该图案化光阻层62具有一开孔64位于接垫20上方并且暴露出部分球下金属层40。特别地，该图案化光阻层62的厚度大约为5至8微米(μm)，形成图案化光阻层62后进行电镀步骤以形成导电凸块50。特别地，让电镀金属材料填满开孔64后，刻意让金属材料逸出于开孔64外，让外溢的金属材料形成一帽体52。形成导电凸块50的方法另包含进行物理、化学气相沉积。导电凸块50包含金、银、铜、铝、钨、镍、钴的金属合金，以及/或类似物。在一实施例中，导电凸块50系与球下金属层40最上层(例如晶种层)之金属材料相同，等同球下金属层40往上方延伸，可视为球下金属层40之一部分，之后，将图案化光阻层62及部分球下金属层40去除后，再于导电凸块50上形成钖球60，形成钖球60的方式可采用电镀、印刷或植球后再进行一道回焊制程，使锡球60能完全包覆并固定于该导电凸块50上(如图1A所示)。
图2系依据本发明部分实施例所载之半导体结构200。半导体结构200包含基板10、接垫20、重布层72(redistribution layer,RDL)、保护层74或聚合物层、球下金属层76、导电凸块80、焊球82。钝化层71覆盖基板10之主动面上并且具有一开孔暴露出部分接垫20，重布层72为一图案化的金属层，其系透过钝化层71的开孔连接接垫20，提供接垫20与焊球82耦合的途径。保护层74覆盖钝化层71与部分重布层72，保护层74具有一开孔使得一部份重布层72露出。球下金属层76形成于保护层74的开孔中，且透过该开孔与重布层72连接。导电凸块80形成于球下金属层76上方，导电凸块80包含一帽体85与一柱体88。焊球82包覆导电凸块80整体及球下金属层76的侧壁78，更明确地，焊球82包覆顶面86、帽体85之侧壁87、柱体88之侧壁89。帽体85的底部截面积(以切线BB'为基准)大于柱体88的截面积，从侧面观之，帽体85之底部95的宽度(两侧壁87的距离)大于球下金属层76的宽度(两侧壁78的距离)，帽体85边缘系水平突出于柱体88之外，使得帽体85之底部95与保护层74上表面之间产生一间隔90，使得部分焊球材料能填充于间隔90中，当焊球82回焊并且固化后，焊球82可包覆间隔90、导电凸块80与球下金属层76的侧壁78，间隔90与帽体85形成如同一卡榫或倒勾的装置，系利用结构力学方式增加焊球82与导电凸块80的附着力，能防止焊球82脱落。此外，焊球82与导电凸块80之间的接触面积增加，有效地提升两者之间的附着力。
图3A-3B系依据本发明部分实施例所载之半导体结构200之制造方法。如图3A所示，保护层74经过图案化处理后具有一开孔暴露部分的重布层72，一金属层91沉积于基板10上并且覆盖保护层74与部分的重布层72，金属层91透过保护层74的开孔与重布层72连接。接着，形成图案化层92于金属层91上，并具有一开孔94暴露出下方的金属层91，于另一可行之实施例中，该图案化层92的厚度大约为5至8微米(μm)。
如图3B所示，利用电镀方式将金属材料沉积于开孔94中，特别地，让金属材料填满开孔94并且溢出于开孔94之开口，使得部分金属材料位于图案化层92之上，而形成帽体85。一实施例中，控制电镀成长让帽体85之顶部具有一平面；一实施例中，控制电镀成长让帽体85之顶面具有一曲面例如：凹面或凸面。另一实施例中，亦可利用沉积方式形成导电凸块80。其后，将图案化层92移除且蚀刻移除该金属层91，使原本在帽体85下方的图案化层92与金属层91之所在位置形成为间隔90，该间隔90的高度系等同原本图案化层92及该金属层91的厚度。其后，进行一形成焊球步骤焊球形成方式例如但不限于网版印刷、蒸镀、电镀、落球、喷球等。于一可行之实施例中，焊球82之形成方式可采用落球方式，于实施上配合一钢版(Stencil)使用(未绘示)，焊球82藉由钢版辅助落球于球下金属层76上，再利用回焊步骤，使得焊球82包覆导电凸块80整体与球下金属层76之侧壁78，包含导电凸块80与保护层71之间所形成之间隔90，由于间隔90的产生让焊球82与导电凸块80之间的接触面积增加，导致附着力的提升而防止掉球的状况。
前述内容概述一些实施方式的特征，因而熟知此技艺之人士可更加理解本申请案揭示内容之各方面。熟知此技艺之人士应理解可轻易使用本申请案揭示内容作为基础，用于设计或修饰其他制程与结构而实现与本申请案所述之实施例具有相同目的与/或达到相同优点。熟知此技艺之人士亦应理解此均等架构并不脱离本申请案揭示内容的精神与范围，以及熟知此技艺之人士可进行各种变化、取代与替换，而不脱离本申请案揭示内容之精神与范围。
附图标记说明
10 基板 20 接垫
30 钝化层 40 球下金属层
31 开孔 50 导电凸块
41 侧壁 52 帽体
51 柱体 54 厚度
53 顶面 56 间隔
55 侧壁 58 底部
57 侧壁 60 焊球
62 图案化光阻层 64 开孔
71 钝化层 72 重布层
74 保护层 76 球下金属层
78 侧壁 80 导电凸块
82 焊球 85 帽体
86 顶面 87 侧壁
88 柱体 89 侧壁
90 间隔 91 金属层
92 图案化层 95 底部
94 开孔 200 半导体结构
100 半导体结构

Claims (10)

1.一种半导体装置，该半导体装置包括一基板，其中该基板包含一接垫；以及一钝化层配置于该基板上方，其中该钝化层系局部覆盖该接垫：
一球下金属层，配置于该基板上方，其中该球下金属层系与该接垫耦合；
一导电凸块，配置于该球下金属层之上方，其中该导电凸块，包含：
一柱体，系连接该球下金属层，该柱体与该球下金属层的最上层由相同材料组成，且该柱体具有一侧壁与该球下金属层之外部侧壁对齐；
一帽体，配置于该柱体的顶部，其中，该帽体包含一底部截面积系大于该柱体的截面积，该帽体之底部距离该钝化层之上表面具有一间隔；以及
一焊球，系包覆该导电凸块。
2.如权利要求1所述的半导体装置，其中该帽体包含一底部宽度系大于该球下金属层的宽度。
3.如权利要求1所述的半导体装置，其中该焊球系包覆该柱体之侧壁及该间隔。
4.如权利要求1所述的半导体装置，其中该帽体之顶面系为一曲面，该帽体的中心部分之厚度大于该帽体的边缘部分之厚度。
5.如权利要求1所述的半导体装置，其中该导电凸块之材质选自于金、铜、镍、银或其合金。
6.如权利要求1所述的半导体装置，其中该球下金属层之材质选自为钛/铜、钛/钨/金或含银合金。
7.一种半导体装置，该半导体装置包括一基板，其中该基板包含一接垫；以及一钝化层配置于该基板上方并暴露出该接垫之部份：
一重布层配置于该钝化层上，并与该接垫之该部份耦合；
一保护层配置于该重布层上，并且暴露出该重布层之部分；
一球下金属层配置于该保护层上，其中该球下金属层系与该重布层之该部分耦合；
一导电凸块，配置于该球下金属层之上方，其中该导电凸块，包含：
一柱体，系连接该球下金属层，该柱体具有一侧壁与该球下金属层之外部側壁对齐；
一帽体，配置于该柱体的顶部，其中，该帽体包含一底部截面积系大于该柱体的截面积，且该帽体之底部距离该保护层之上表面具有一间隔；以及
一焊球，系包覆该导电凸块，其中该焊球包覆该柱体的该侧壁。
8.如权利要求7所述的半导体装置，其中该帽体包含一底部宽度系大于该球下金属层的宽度。
9.如权利要求7所述的半导体装置，其中该焊球系包覆该柱体之该间隔。
10.如权利要求7所述的半导体装置，其中该导电凸块之材质选自于金、铜、镍、银或其合金。
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