JP2017510823A5 - - Google Patents

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Publication number
JP2017510823A5
JP2017510823A5 JP2016534727A JP2016534727A JP2017510823A5 JP 2017510823 A5 JP2017510823 A5 JP 2017510823A5 JP 2016534727 A JP2016534727 A JP 2016534727A JP 2016534727 A JP2016534727 A JP 2016534727A JP 2017510823 A5 JP2017510823 A5 JP 2017510823A5
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JP
Japan
Prior art keywords
target
target material
light beam
plasma
amplified light
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JP2016534727A
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English (en)
Japanese (ja)
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JP2017510823A (ja
JP6408578B2 (ja
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Priority claimed from US14/563,496 external-priority patent/US9338870B2/en
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Publication of JP2017510823A publication Critical patent/JP2017510823A/ja
Publication of JP2017510823A5 publication Critical patent/JP2017510823A5/ja
Application granted granted Critical
Publication of JP6408578B2 publication Critical patent/JP6408578B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2016534727A 2013-12-30 2014-12-18 極端紫外光源 Expired - Fee Related JP6408578B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361922019P 2013-12-30 2013-12-30
US61/922,019 2013-12-30
US14/563,496 US9338870B2 (en) 2013-12-30 2014-12-08 Extreme ultraviolet light source
US14/563,496 2014-12-08
PCT/EP2014/078500 WO2015101509A1 (en) 2013-12-30 2014-12-18 Extreme ultraviolet light source

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018175795A Division JP6678714B2 (ja) 2013-12-30 2018-09-20 極端紫外光源

Publications (3)

Publication Number Publication Date
JP2017510823A JP2017510823A (ja) 2017-04-13
JP2017510823A5 true JP2017510823A5 (enExample) 2018-01-25
JP6408578B2 JP6408578B2 (ja) 2018-10-17

Family

ID=53483564

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JP2016534727A Expired - Fee Related JP6408578B2 (ja) 2013-12-30 2014-12-18 極端紫外光源
JP2018175795A Expired - Fee Related JP6678714B2 (ja) 2013-12-30 2018-09-20 極端紫外光源

Family Applications After (1)

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JP2018175795A Expired - Fee Related JP6678714B2 (ja) 2013-12-30 2018-09-20 極端紫外光源

Country Status (7)

Country Link
US (1) US9338870B2 (enExample)
EP (1) EP3090607A1 (enExample)
JP (2) JP6408578B2 (enExample)
KR (1) KR20160103996A (enExample)
CN (2) CN105874887B (enExample)
TW (1) TWI643209B (enExample)
WO (1) WO2015101509A1 (enExample)

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US9338870B2 (en) * 2013-12-30 2016-05-10 Asml Netherlands B.V. Extreme ultraviolet light source
US9451683B1 (en) * 2015-07-14 2016-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Solution for EUV power increment at wafer level
US9426872B1 (en) * 2015-08-12 2016-08-23 Asml Netherlands B.V. System and method for controlling source laser firing in an LPP EUV light source
US9820368B2 (en) 2015-08-12 2017-11-14 Asml Netherlands B.V. Target expansion rate control in an extreme ultraviolet light source
US9713240B2 (en) 2015-08-12 2017-07-18 Asml Netherlands B.V. Stabilizing EUV light power in an extreme ultraviolet light source
US9778022B1 (en) 2016-09-14 2017-10-03 Asml Netherlands B.V. Determining moving properties of a target in an extreme ultraviolet light source
US10149375B2 (en) * 2016-09-14 2018-12-04 Asml Netherlands B.V. Target trajectory metrology in an extreme ultraviolet light source
US10310380B2 (en) * 2016-12-07 2019-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. High-brightness light source
WO2019081364A1 (en) 2017-10-26 2019-05-02 Asml Netherlands B.V. PLASMA CONTROL SYSTEM
RU2670273C2 (ru) * 2017-11-24 2018-10-22 Общество с ограниченной ответственностью "РнД-ИСАН" Устройство и способ для генерации излучения из лазерной плазмы
US11237482B2 (en) * 2018-08-14 2022-02-01 Taiwan Semiconductor Manufacturing Co., Ltd. Process system and operating method thereof
US11153959B2 (en) * 2018-08-17 2021-10-19 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for generating extreme ultraviolet radiation
NL2023879A (en) * 2018-09-26 2020-05-01 Asml Netherlands Bv Apparatus for and method of controlling introduction of euv target material into an euv chamber
TWI892982B (zh) * 2019-04-01 2025-08-11 荷蘭商Asml荷蘭公司 極紫外(euv)光源、目標供應系統、及控制euv光源中轉換效率的方法
TWI888405B (zh) 2019-09-06 2025-07-01 荷蘭商Asml荷蘭公司 用於極紫外線光源之裝置及用於目標材料供應系統之支撐結構
CN113310968B (zh) * 2021-04-22 2022-07-08 清华大学 一种基于光束整形改善激光诱导击穿光谱可重复性的方法

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US20060255298A1 (en) 2005-02-25 2006-11-16 Cymer, Inc. Laser produced plasma EUV light source with pre-pulse
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JP2012199512A (ja) 2011-03-10 2012-10-18 Gigaphoton Inc 極端紫外光生成装置及び極端紫外光生成方法
US8604452B2 (en) 2011-03-17 2013-12-10 Cymer, Llc Drive laser delivery systems for EUV light source
US9516730B2 (en) 2011-06-08 2016-12-06 Asml Netherlands B.V. Systems and methods for buffer gas flow stabilization in a laser produced plasma light source
JP2013140771A (ja) 2011-12-09 2013-07-18 Gigaphoton Inc ターゲット供給装置
KR102072064B1 (ko) * 2012-05-21 2020-01-31 에이에스엠엘 네델란즈 비.브이. 방사선 소스
DE102012209837A1 (de) * 2012-06-12 2013-12-12 Trumpf Laser- Und Systemtechnik Gmbh EUV-Anregungslichtquelle mit einer Laserstrahlquelle und einer Strahlführungsvorrichtung zum Manipulieren des Laserstrahls
CN103064260A (zh) * 2012-12-10 2013-04-24 华中科技大学 一种用于极紫外光刻机光源的锡液滴靶产生装置
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US9338870B2 (en) * 2013-12-30 2016-05-10 Asml Netherlands B.V. Extreme ultraviolet light source

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