KR20160103996A - 극자외 광원 - Google Patents

극자외 광원 Download PDF

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Publication number
KR20160103996A
KR20160103996A KR1020167017443A KR20167017443A KR20160103996A KR 20160103996 A KR20160103996 A KR 20160103996A KR 1020167017443 A KR1020167017443 A KR 1020167017443A KR 20167017443 A KR20167017443 A KR 20167017443A KR 20160103996 A KR20160103996 A KR 20160103996A
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KR
South Korea
Prior art keywords
target
target material
plasma
optical beam
pulse
Prior art date
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Ceased
Application number
KR1020167017443A
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English (en)
Korean (ko)
Inventor
예젱 타오
존 톰 스튜워트
다니엘 제이.더블유. 브라운
Original Assignee
에이에스엠엘 네델란즈 비.브이.
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Application filed by 에이에스엠엘 네델란즈 비.브이. filed Critical 에이에스엠엘 네델란즈 비.브이.
Publication of KR20160103996A publication Critical patent/KR20160103996A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam
    • H05G2/0088—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam for preconditioning the plasma generating material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Plasma Technology (AREA)
KR1020167017443A 2013-12-30 2014-12-18 극자외 광원 Ceased KR20160103996A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361922019P 2013-12-30 2013-12-30
US61/922,019 2013-12-30
US14/563,496 US9338870B2 (en) 2013-12-30 2014-12-08 Extreme ultraviolet light source
US14/563,496 2014-12-08
PCT/EP2014/078500 WO2015101509A1 (en) 2013-12-30 2014-12-18 Extreme ultraviolet light source

Publications (1)

Publication Number Publication Date
KR20160103996A true KR20160103996A (ko) 2016-09-02

Family

ID=53483564

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167017443A Ceased KR20160103996A (ko) 2013-12-30 2014-12-18 극자외 광원

Country Status (7)

Country Link
US (1) US9338870B2 (enExample)
EP (1) EP3090607A1 (enExample)
JP (2) JP6408578B2 (enExample)
KR (1) KR20160103996A (enExample)
CN (2) CN105874887B (enExample)
TW (1) TWI643209B (enExample)
WO (1) WO2015101509A1 (enExample)

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US9426872B1 (en) * 2015-08-12 2016-08-23 Asml Netherlands B.V. System and method for controlling source laser firing in an LPP EUV light source
US9820368B2 (en) 2015-08-12 2017-11-14 Asml Netherlands B.V. Target expansion rate control in an extreme ultraviolet light source
US9713240B2 (en) 2015-08-12 2017-07-18 Asml Netherlands B.V. Stabilizing EUV light power in an extreme ultraviolet light source
US9778022B1 (en) 2016-09-14 2017-10-03 Asml Netherlands B.V. Determining moving properties of a target in an extreme ultraviolet light source
US10149375B2 (en) * 2016-09-14 2018-12-04 Asml Netherlands B.V. Target trajectory metrology in an extreme ultraviolet light source
US10310380B2 (en) * 2016-12-07 2019-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. High-brightness light source
WO2019081364A1 (en) 2017-10-26 2019-05-02 Asml Netherlands B.V. PLASMA CONTROL SYSTEM
RU2670273C2 (ru) * 2017-11-24 2018-10-22 Общество с ограниченной ответственностью "РнД-ИСАН" Устройство и способ для генерации излучения из лазерной плазмы
US11237482B2 (en) * 2018-08-14 2022-02-01 Taiwan Semiconductor Manufacturing Co., Ltd. Process system and operating method thereof
US11153959B2 (en) * 2018-08-17 2021-10-19 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for generating extreme ultraviolet radiation
NL2023879A (en) * 2018-09-26 2020-05-01 Asml Netherlands Bv Apparatus for and method of controlling introduction of euv target material into an euv chamber
TWI892982B (zh) * 2019-04-01 2025-08-11 荷蘭商Ａｓｍｌ荷蘭公司 極紫外（ｅｕｖ）光源、目標供應系統、及控制ｅｕｖ光源中轉換效率的方法
TWI888405B (zh) 2019-09-06 2025-07-01 荷蘭商Ａｓｍｌ荷蘭公司 用於極紫外線光源之裝置及用於目標材料供應系統之支撐結構
CN113310968B (zh) * 2021-04-22 2022-07-08 清华大学 一种基于光束整形改善激光诱导击穿光谱可重复性的方法

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US20060255298A1 (en) 2005-02-25 2006-11-16 Cymer, Inc. Laser produced plasma EUV light source with pre-pulse
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US7897947B2 (en) * 2007-07-13 2011-03-01 Cymer, Inc. Laser produced plasma EUV light source having a droplet stream produced using a modulated disturbance wave
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US8530871B2 (en) * 2007-07-13 2013-09-10 Cymer, Llc Laser produced plasma EUV light source
WO2007121142A2 (en) 2006-04-12 2007-10-25 The Regents Of The University Of California Improved light source employing laser-produced plasma
US7825390B2 (en) * 2007-02-14 2010-11-02 Asml Netherlands B.V. Apparatus with plasma radiation source and method of forming a beam of radiation and lithographic apparatus
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JP5454881B2 (ja) * 2008-08-29 2014-03-26 ギガフォトン株式会社 極端紫外光源装置及び極端紫外光の発生方法
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JP5426317B2 (ja) 2008-10-23 2014-02-26 ギガフォトン株式会社 極端紫外光光源装置
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KR20130040883A (ko) * 2010-04-08 2013-04-24 에이에스엠엘 네델란즈 비.브이. Ｅｕⅴ 방사선 소스 및 ｅｕⅴ 방사선 생성 방법
CN103038708B (zh) * 2010-07-30 2016-08-17 卡尔蔡司Smt有限责任公司 Euv曝光设备
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US8604452B2 (en) 2011-03-17 2013-12-10 Cymer, Llc Drive laser delivery systems for EUV light source
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CN103064260A (zh) * 2012-12-10 2013-04-24 华中科技大学 一种用于极紫外光刻机光源的锡液滴靶产生装置
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Also Published As

Publication number Publication date
WO2015101509A1 (en) 2015-07-09
EP3090607A1 (en) 2016-11-09
CN109379827A (zh) 2019-02-22
JP2017510823A (ja) 2017-04-13
JP2018197887A (ja) 2018-12-13
US9338870B2 (en) 2016-05-10
CN105874887A (zh) 2016-08-17
JP6678714B2 (ja) 2020-04-08
TW201532074A (zh) 2015-08-16
JP6408578B2 (ja) 2018-10-17
US20150189728A1 (en) 2015-07-02
TWI643209B (zh) 2018-12-01
CN105874887B (zh) 2018-10-30

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