TWI643209B - 用於形成極紫外光源的經定形標靶之方法、形成發射極紫外光的電漿之方法及極紫外光源 - Google Patents

用於形成極紫外光源的經定形標靶之方法、形成發射極紫外光的電漿之方法及極紫外光源 Download PDF

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Publication number
TWI643209B
TWI643209B TW103144295A TW103144295A TWI643209B TW I643209 B TWI643209 B TW I643209B TW 103144295 A TW103144295 A TW 103144295A TW 103144295 A TW103144295 A TW 103144295A TW I643209 B TWI643209 B TW I643209B
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Taiwan
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target
plasma
shaped
target material
pulse
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TW103144295A
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Chinese (zh)
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TW201532074A (zh
Inventor
業爭 陶
約翰Ｔ 史圖華特
丹尼爾Ｊ Ｗ 布朗
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Ａｓｍｌ荷蘭公司
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam
    • H05G2/0088—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam for preconditioning the plasma generating material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Plasma Technology (AREA)
TW103144295A 2013-12-30 2014-12-18 用於形成極紫外光源的經定形標靶之方法、形成發射極紫外光的電漿之方法及極紫外光源 TWI643209B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201361922019P 2013-12-30 2013-12-30
US61/922,019 2013-12-30
US14/563,496 US9338870B2 (en) 2013-12-30 2014-12-08 Extreme ultraviolet light source
US14/563,496 2014-12-08

Publications (2)

Publication Number Publication Date
TW201532074A TW201532074A (zh) 2015-08-16
TWI643209B true TWI643209B (zh) 2018-12-01

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Family Applications (1)

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TW103144295A TWI643209B (zh) 2013-12-30 2014-12-18 用於形成極紫外光源的經定形標靶之方法、形成發射極紫外光的電漿之方法及極紫外光源

Country Status (7)

Country Link
US (1) US9338870B2 (enExample)
EP (1) EP3090607A1 (enExample)
JP (2) JP6408578B2 (enExample)
KR (1) KR20160103996A (enExample)
CN (2) CN105874887B (enExample)
TW (1) TWI643209B (enExample)
WO (1) WO2015101509A1 (enExample)

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US10310380B2 (en) * 2016-12-07 2019-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. High-brightness light source
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RU2670273C2 (ru) * 2017-11-24 2018-10-22 Общество с ограниченной ответственностью "РнД-ИСАН" Устройство и способ для генерации излучения из лазерной плазмы
US11237482B2 (en) * 2018-08-14 2022-02-01 Taiwan Semiconductor Manufacturing Co., Ltd. Process system and operating method thereof
US11153959B2 (en) * 2018-08-17 2021-10-19 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for generating extreme ultraviolet radiation
NL2023879A (en) * 2018-09-26 2020-05-01 Asml Netherlands Bv Apparatus for and method of controlling introduction of euv target material into an euv chamber
TWI892982B (zh) * 2019-04-01 2025-08-11 荷蘭商Ａｓｍｌ荷蘭公司 極紫外（ｅｕｖ）光源、目標供應系統、及控制ｅｕｖ光源中轉換效率的方法
TWI888405B (zh) 2019-09-06 2025-07-01 荷蘭商Ａｓｍｌ荷蘭公司 用於極紫外線光源之裝置及用於目標材料供應系統之支撐結構
CN113310968B (zh) * 2021-04-22 2022-07-08 清华大学 一种基于光束整形改善激光诱导击穿光谱可重复性的方法

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Also Published As

Publication number Publication date
WO2015101509A1 (en) 2015-07-09
EP3090607A1 (en) 2016-11-09
CN109379827A (zh) 2019-02-22
JP2017510823A (ja) 2017-04-13
JP2018197887A (ja) 2018-12-13
US9338870B2 (en) 2016-05-10
CN105874887A (zh) 2016-08-17
JP6678714B2 (ja) 2020-04-08
TW201532074A (zh) 2015-08-16
JP6408578B2 (ja) 2018-10-17
US20150189728A1 (en) 2015-07-02
KR20160103996A (ko) 2016-09-02
CN105874887B (zh) 2018-10-30

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