CN105874887B - 极紫外光源 - Google Patents

极紫外光源 Download PDF

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Publication number
CN105874887B
CN105874887B CN201480071653.7A CN201480071653A CN105874887B CN 105874887 B CN105874887 B CN 105874887B CN 201480071653 A CN201480071653 A CN 201480071653A CN 105874887 B CN105874887 B CN 105874887B
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CN
China
Prior art keywords
target
shaped
plasma
target material
pulse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN201480071653.7A
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English (en)
Chinese (zh)
Other versions
CN105874887A (zh
Inventor
陶业争
J·T·斯特瓦特
D·J·W·布朗
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ASML Holding NV
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ASML Holding NV
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Publication date
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Priority to CN201811052605.XA priority Critical patent/CN109379827A/zh
Publication of CN105874887A publication Critical patent/CN105874887A/zh
Application granted granted Critical
Publication of CN105874887B publication Critical patent/CN105874887B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam
    • H05G2/0088—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam for preconditioning the plasma generating material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Plasma Technology (AREA)
CN201480071653.7A 2013-12-30 2014-12-18 极紫外光源 Expired - Fee Related CN105874887B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811052605.XA CN109379827A (zh) 2013-12-30 2014-12-18 极紫外光源

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361922019P 2013-12-30 2013-12-30
US61/922,019 2013-12-30
US14/563,496 US9338870B2 (en) 2013-12-30 2014-12-08 Extreme ultraviolet light source
US14/563,496 2014-12-08
PCT/EP2014/078500 WO2015101509A1 (en) 2013-12-30 2014-12-18 Extreme ultraviolet light source

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201811052605.XA Division CN109379827A (zh) 2013-12-30 2014-12-18 极紫外光源

Publications (2)

Publication Number Publication Date
CN105874887A CN105874887A (zh) 2016-08-17
CN105874887B true CN105874887B (zh) 2018-10-30

Family

ID=53483564

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201480071653.7A Expired - Fee Related CN105874887B (zh) 2013-12-30 2014-12-18 极紫外光源
CN201811052605.XA Pending CN109379827A (zh) 2013-12-30 2014-12-18 极紫外光源

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201811052605.XA Pending CN109379827A (zh) 2013-12-30 2014-12-18 极紫外光源

Country Status (7)

Country Link
US (1) US9338870B2 (enExample)
EP (1) EP3090607A1 (enExample)
JP (2) JP6408578B2 (enExample)
KR (1) KR20160103996A (enExample)
CN (2) CN105874887B (enExample)
TW (1) TWI643209B (enExample)
WO (1) WO2015101509A1 (enExample)

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US9338870B2 (en) * 2013-12-30 2016-05-10 Asml Netherlands B.V. Extreme ultraviolet light source
US9451683B1 (en) * 2015-07-14 2016-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Solution for EUV power increment at wafer level
US9426872B1 (en) * 2015-08-12 2016-08-23 Asml Netherlands B.V. System and method for controlling source laser firing in an LPP EUV light source
US9820368B2 (en) 2015-08-12 2017-11-14 Asml Netherlands B.V. Target expansion rate control in an extreme ultraviolet light source
US9713240B2 (en) 2015-08-12 2017-07-18 Asml Netherlands B.V. Stabilizing EUV light power in an extreme ultraviolet light source
US9778022B1 (en) 2016-09-14 2017-10-03 Asml Netherlands B.V. Determining moving properties of a target in an extreme ultraviolet light source
US10149375B2 (en) * 2016-09-14 2018-12-04 Asml Netherlands B.V. Target trajectory metrology in an extreme ultraviolet light source
US10310380B2 (en) * 2016-12-07 2019-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. High-brightness light source
WO2019081364A1 (en) 2017-10-26 2019-05-02 Asml Netherlands B.V. PLASMA CONTROL SYSTEM
RU2670273C2 (ru) * 2017-11-24 2018-10-22 Общество с ограниченной ответственностью "РнД-ИСАН" Устройство и способ для генерации излучения из лазерной плазмы
US11237482B2 (en) * 2018-08-14 2022-02-01 Taiwan Semiconductor Manufacturing Co., Ltd. Process system and operating method thereof
US11153959B2 (en) * 2018-08-17 2021-10-19 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for generating extreme ultraviolet radiation
NL2023879A (en) * 2018-09-26 2020-05-01 Asml Netherlands Bv Apparatus for and method of controlling introduction of euv target material into an euv chamber
TWI892982B (zh) * 2019-04-01 2025-08-11 荷蘭商Ａｓｍｌ荷蘭公司 極紫外（ｅｕｖ）光源、目標供應系統、及控制ｅｕｖ光源中轉換效率的方法
TWI888405B (zh) 2019-09-06 2025-07-01 荷蘭商Ａｓｍｌ荷蘭公司 用於極紫外線光源之裝置及用於目標材料供應系統之支撐結構
CN113310968B (zh) * 2021-04-22 2022-07-08 清华大学 一种基于光束整形改善激光诱导击穿光谱可重复性的方法

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Also Published As

Publication number Publication date
WO2015101509A1 (en) 2015-07-09
EP3090607A1 (en) 2016-11-09
CN109379827A (zh) 2019-02-22
JP2017510823A (ja) 2017-04-13
JP2018197887A (ja) 2018-12-13
US9338870B2 (en) 2016-05-10
CN105874887A (zh) 2016-08-17
JP6678714B2 (ja) 2020-04-08
TW201532074A (zh) 2015-08-16
JP6408578B2 (ja) 2018-10-17
US20150189728A1 (en) 2015-07-02
KR20160103996A (ko) 2016-09-02
TWI643209B (zh) 2018-12-01

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