JP2016512382A5 - - Google Patents

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Publication number
JP2016512382A5
JP2016512382A5 JP2016500295A JP2016500295A JP2016512382A5 JP 2016512382 A5 JP2016512382 A5 JP 2016512382A5 JP 2016500295 A JP2016500295 A JP 2016500295A JP 2016500295 A JP2016500295 A JP 2016500295A JP 2016512382 A5 JP2016512382 A5 JP 2016512382A5
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JP
Japan
Prior art keywords
pulse
radiation pulse
source
radiation
droplet
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JP2016500295A
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English (en)
Japanese (ja)
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JP2016512382A (ja
JP6397884B2 (ja
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Priority claimed from US13/830,461 external-priority patent/US8872143B2/en
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Publication of JP2016512382A5 publication Critical patent/JP2016512382A5/ja
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JP2016500295A 2013-03-14 2014-02-18 レーザ生成プラズマ極端紫外線光源のターゲット Active JP6397884B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/830,461 2013-03-14
US13/830,461 US8872143B2 (en) 2013-03-14 2013-03-14 Target for laser produced plasma extreme ultraviolet light source
PCT/US2014/016967 WO2014143504A1 (en) 2013-03-14 2014-02-18 Target for laser produced plasma extreme ultraviolet light source

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018119462A Division JP6563563B2 (ja) 2013-03-14 2018-06-25 レーザ生成プラズマ極端紫外線光源のターゲット

Publications (3)

Publication Number Publication Date
JP2016512382A JP2016512382A (ja) 2016-04-25
JP2016512382A5 true JP2016512382A5 (enExample) 2017-03-09
JP6397884B2 JP6397884B2 (ja) 2018-09-26

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
JP2016500295A Active JP6397884B2 (ja) 2013-03-14 2014-02-18 レーザ生成プラズマ極端紫外線光源のターゲット
JP2018119462A Active JP6563563B2 (ja) 2013-03-14 2018-06-25 レーザ生成プラズマ極端紫外線光源のターゲット
JP2019136363A Active JP6799645B2 (ja) 2013-03-14 2019-07-24 レーザ生成プラズマ極端紫外線光源のターゲット

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2018119462A Active JP6563563B2 (ja) 2013-03-14 2018-06-25 レーザ生成プラズマ極端紫外線光源のターゲット
JP2019136363A Active JP6799645B2 (ja) 2013-03-14 2019-07-24 レーザ生成プラズマ極端紫外線光源のターゲット

Country Status (5)

Country Link
US (4) US8872143B2 (enExample)
JP (3) JP6397884B2 (enExample)
KR (2) KR102292882B1 (enExample)
TW (2) TWI690243B (enExample)
WO (1) WO2014143504A1 (enExample)

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US8791440B1 (en) * 2013-03-14 2014-07-29 Asml Netherlands B.V. Target for extreme ultraviolet light source
US9338870B2 (en) 2013-12-30 2016-05-10 Asml Netherlands B.V. Extreme ultraviolet light source
US9357625B2 (en) 2014-07-07 2016-05-31 Asml Netherlands B.V. Extreme ultraviolet light source
US9538628B1 (en) 2015-06-11 2017-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Method for EUV power improvement with fuel droplet trajectory stabilization
US9820368B2 (en) 2015-08-12 2017-11-14 Asml Netherlands B.V. Target expansion rate control in an extreme ultraviolet light source
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US9426872B1 (en) * 2015-08-12 2016-08-23 Asml Netherlands B.V. System and method for controlling source laser firing in an LPP EUV light source
US20170311429A1 (en) * 2016-04-25 2017-10-26 Asml Netherlands B.V. Reducing the effect of plasma on an object in an extreme ultraviolet light source
WO2018029759A1 (ja) * 2016-08-08 2018-02-15 ギガフォトン株式会社 極端紫外光生成方法
US10149375B2 (en) * 2016-09-14 2018-12-04 Asml Netherlands B.V. Target trajectory metrology in an extreme ultraviolet light source
US9778022B1 (en) 2016-09-14 2017-10-03 Asml Netherlands B.V. Determining moving properties of a target in an extreme ultraviolet light source
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WO2018108468A1 (en) 2016-12-13 2018-06-21 Universiteit Van Amsterdam Radiation source apparatus and method, lithographic apparatus and inspection apparatus
WO2019081364A1 (en) 2017-10-26 2019-05-02 Asml Netherlands B.V. PLASMA CONTROL SYSTEM
US10959318B2 (en) * 2018-01-10 2021-03-23 Kla-Tencor Corporation X-ray metrology system with broadband laser produced plasma illuminator
US10925142B2 (en) * 2018-07-31 2021-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. EUV radiation source for lithography exposure process
US11153959B2 (en) * 2018-08-17 2021-10-19 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for generating extreme ultraviolet radiation
NL2023633A (en) * 2018-09-25 2020-04-30 Asml Netherlands Bv Laser system for target metrology and alteration in an euv light source
NL2025013A (en) * 2019-03-07 2020-09-11 Asml Netherlands Bv Laser system for source material conditioning in an euv light source
TWI861161B (zh) * 2019-08-15 2024-11-11 荷蘭商Ａｓｍｌ荷蘭公司 用於產生極紫外線輻射之裝置及方法
US12444901B2 (en) 2020-04-09 2025-10-14 Asml Netherlands B.V. Seed laser system for radiation source
JP7434096B2 (ja) 2020-07-30 2024-02-20 ギガフォトン株式会社 極端紫外光生成システム、及び電子デバイスの製造方法
KR20220030350A (ko) 2020-08-27 2022-03-11 삼성전자주식회사 광원 및 이를 이용한 극자외선 광원 시스템
KR20220030382A (ko) 2020-08-28 2022-03-11 삼성전자주식회사 극자외선 노광 방법 및 이를 이용한 반도체 제조 방법

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US8604452B2 (en) 2011-03-17 2013-12-10 Cymer, Llc Drive laser delivery systems for EUV light source
US9516730B2 (en) 2011-06-08 2016-12-06 Asml Netherlands B.V. Systems and methods for buffer gas flow stabilization in a laser produced plasma light source
WO2013029906A1 (en) * 2011-09-02 2013-03-07 Asml Netherlands B.V. Radiation source
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US8872143B2 (en) 2013-03-14 2014-10-28 Asml Netherlands B.V. Target for laser produced plasma extreme ultraviolet light source

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