KR102151765B1 - 레이저 생성 플라즈마 극자외 광원용 타겟 - Google Patents

레이저 생성 플라즈마 극자외 광원용 타겟 Download PDF

Info

Publication number
KR102151765B1
KR102151765B1 KR1020157027195A KR20157027195A KR102151765B1 KR 102151765 B1 KR102151765 B1 KR 102151765B1 KR 1020157027195 A KR1020157027195 A KR 1020157027195A KR 20157027195 A KR20157027195 A KR 20157027195A KR 102151765 B1 KR102151765 B1 KR 102151765B1
Authority
KR
South Korea
Prior art keywords
pulse
target
radiation
target material
droplet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020157027195A
Other languages
English (en)
Korean (ko)
Other versions
KR20150131084A (ko
Inventor
로버트 제이. 라팍
예젱 타오
Original Assignee
에이에스엠엘 네델란즈 비.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이에스엠엘 네델란즈 비.브이. filed Critical 에이에스엠엘 네델란즈 비.브이.
Priority to KR1020207025013A priority Critical patent/KR102292882B1/ko
Publication of KR20150131084A publication Critical patent/KR20150131084A/ko
Application granted granted Critical
Publication of KR102151765B1 publication Critical patent/KR102151765B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G2/00Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001Production of X-ray radiation generated from plasma
    • H05G2/008Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G2/00Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001Production of X-ray radiation generated from plasma
    • H05G2/008Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H05G2/0082Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam
    • H05G2/0088Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam for preconditioning the plasma generating material
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G2/00Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001Production of X-ray radiation generated from plasma
    • H05G2/008Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H05G2/0082Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam
    • H05G2/0086Optical arrangements for conveying the laser beam to the plasma generation location
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008Production of exposure light, i.e. light sources
    • G03F7/70033Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21KTECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00Irradiation devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02Constructional details
    • H01S3/025Constructional details of solid state lasers, e.g. housings or mountings
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G2/00Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001Production of X-ray radiation generated from plasma
    • H05G2/003Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • H05G2/0035Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state the material containing metals as principal radiation-generating components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G2/00Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001Production of X-ray radiation generated from plasma
    • H05G2/003Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • H05G2/005Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state containing a metal as principal radiation generating component

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • X-Ray Techniques (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Plasma Technology (AREA)
  • Lasers (AREA)
KR1020157027195A 2013-03-14 2014-02-18 레이저 생성 플라즈마 극자외 광원용 타겟 Active KR102151765B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020207025013A KR102292882B1 (ko) 2013-03-14 2014-02-18 레이저 생성 플라즈마 극자외 광원용 타겟

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/830,461 2013-03-14
US13/830,461 US8872143B2 (en) 2013-03-14 2013-03-14 Target for laser produced plasma extreme ultraviolet light source
PCT/US2014/016967 WO2014143504A1 (en) 2013-03-14 2014-02-18 Target for laser produced plasma extreme ultraviolet light source

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020207025013A Division KR102292882B1 (ko) 2013-03-14 2014-02-18 레이저 생성 플라즈마 극자외 광원용 타겟

Publications (2)

Publication Number Publication Date
KR20150131084A KR20150131084A (ko) 2015-11-24
KR102151765B1 true KR102151765B1 (ko) 2020-09-04

Family

ID=50072135

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020157027195A Active KR102151765B1 (ko) 2013-03-14 2014-02-18 레이저 생성 플라즈마 극자외 광원용 타겟
KR1020207025013A Active KR102292882B1 (ko) 2013-03-14 2014-02-18 레이저 생성 플라즈마 극자외 광원용 타겟

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020207025013A Active KR102292882B1 (ko) 2013-03-14 2014-02-18 레이저 생성 플라즈마 극자외 광원용 타겟

Country Status (5)

Country Link
US (4) US8872143B2 (enExample)
JP (3) JP6397884B2 (enExample)
KR (2) KR102151765B1 (enExample)
TW (2) TWI690243B (enExample)
WO (1) WO2014143504A1 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013004258A (ja) * 2011-06-15 2013-01-07 Gigaphoton Inc 極端紫外光生成装置及び極端紫外光の生成方法
WO2014019803A1 (en) * 2012-08-01 2014-02-06 Asml Netherlands B.V. Method and apparatus for generating radiation
EP2951643B1 (en) * 2013-01-30 2019-12-25 Kla-Tencor Corporation Euv light source using cryogenic droplet targets in mask inspection
US8872143B2 (en) 2013-03-14 2014-10-28 Asml Netherlands B.V. Target for laser produced plasma extreme ultraviolet light source
US8791440B1 (en) * 2013-03-14 2014-07-29 Asml Netherlands B.V. Target for extreme ultraviolet light source
US9338870B2 (en) 2013-12-30 2016-05-10 Asml Netherlands B.V. Extreme ultraviolet light source
US9357625B2 (en) 2014-07-07 2016-05-31 Asml Netherlands B.V. Extreme ultraviolet light source
US9538628B1 (en) 2015-06-11 2017-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Method for EUV power improvement with fuel droplet trajectory stabilization
US9713240B2 (en) 2015-08-12 2017-07-18 Asml Netherlands B.V. Stabilizing EUV light power in an extreme ultraviolet light source
US9820368B2 (en) 2015-08-12 2017-11-14 Asml Netherlands B.V. Target expansion rate control in an extreme ultraviolet light source
US9426872B1 (en) * 2015-08-12 2016-08-23 Asml Netherlands B.V. System and method for controlling source laser firing in an LPP EUV light source
TWI739755B (zh) * 2015-08-12 2021-09-21 荷蘭商Asml荷蘭公司 極紫外線光源中之目標擴張率控制
US20170311429A1 (en) * 2016-04-25 2017-10-26 Asml Netherlands B.V. Reducing the effect of plasma on an object in an extreme ultraviolet light source
WO2018029759A1 (ja) * 2016-08-08 2018-02-15 ギガフォトン株式会社 極端紫外光生成方法
US9778022B1 (en) 2016-09-14 2017-10-03 Asml Netherlands B.V. Determining moving properties of a target in an extreme ultraviolet light source
US10149375B2 (en) * 2016-09-14 2018-12-04 Asml Netherlands B.V. Target trajectory metrology in an extreme ultraviolet light source
JP6748730B2 (ja) * 2016-11-01 2020-09-02 ギガフォトン株式会社 極端紫外光生成装置
WO2018108468A1 (en) 2016-12-13 2018-06-21 Universiteit Van Amsterdam Radiation source apparatus and method, lithographic apparatus and inspection apparatus
JP7225224B2 (ja) 2017-10-26 2023-02-20 エーエスエムエル ネザーランズ ビー.ブイ. プラズマをモニタするためのシステム
US10959318B2 (en) * 2018-01-10 2021-03-23 Kla-Tencor Corporation X-ray metrology system with broadband laser produced plasma illuminator
US10925142B2 (en) * 2018-07-31 2021-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. EUV radiation source for lithography exposure process
US11153959B2 (en) * 2018-08-17 2021-10-19 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for generating extreme ultraviolet radiation
CN112771999B (zh) * 2018-09-25 2024-12-31 Asml荷兰有限公司 在euv光源中用于靶量测和改变的激光系统
NL2025013A (en) 2019-03-07 2020-09-11 Asml Netherlands Bv Laser system for source material conditioning in an euv light source
TWI861161B (zh) 2019-08-15 2024-11-11 荷蘭商Asml荷蘭公司 用於產生極紫外線輻射之裝置及方法
KR20220166280A (ko) 2020-04-09 2022-12-16 에이에스엠엘 네델란즈 비.브이. 방사선 소스용 시드 레이저 시스템
JP7434096B2 (ja) 2020-07-30 2024-02-20 ギガフォトン株式会社 極端紫外光生成システム、及び電子デバイスの製造方法
KR20220030350A (ko) 2020-08-27 2022-03-11 삼성전자주식회사 광원 및 이를 이용한 극자외선 광원 시스템
KR20220030382A (ko) 2020-08-28 2022-03-11 삼성전자주식회사 극자외선 노광 방법 및 이를 이용한 반도체 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080067456A1 (en) 2006-04-13 2008-03-20 Xtreme Technologies Gmbh Arrangement for generating extreme ultraviolet radiation from a plasma generated by an energy beam with high conversion efficiency and minimum contamination
US20100303199A1 (en) 2008-01-28 2010-12-02 Media Lario S.R.L. Grazing incidence collector for laser produced plasma sources
JP2013004258A (ja) * 2011-06-15 2013-01-07 Gigaphoton Inc 極端紫外光生成装置及び極端紫外光の生成方法

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7916388B2 (en) 2007-12-20 2011-03-29 Cymer, Inc. Drive laser for EUV light source
US20060255298A1 (en) * 2005-02-25 2006-11-16 Cymer, Inc. Laser produced plasma EUV light source with pre-pulse
US7491954B2 (en) 2006-10-13 2009-02-17 Cymer, Inc. Drive laser delivery systems for EUV light source
US7598509B2 (en) * 2004-11-01 2009-10-06 Cymer, Inc. Laser produced plasma EUV light source
US7671349B2 (en) * 2003-04-08 2010-03-02 Cymer, Inc. Laser produced plasma EUV light source
US8654438B2 (en) 2010-06-24 2014-02-18 Cymer, Llc Master oscillator-power amplifier drive laser with pre-pulse for EUV light source
WO2003096764A1 (en) * 2002-05-13 2003-11-20 Jettec Ab Method and arrangement for producing radiation
US6973164B2 (en) 2003-06-26 2005-12-06 University Of Central Florida Research Foundation, Inc. Laser-produced plasma EUV light source with pre-pulse enhancement
DE102005014433B3 (de) * 2005-03-24 2006-10-05 Xtreme Technologies Gmbh Verfahren und Anordnung zur effizienten Erzeugung von kurzwelliger Strahlung auf Basis eines lasererzeugten Plasmas
JP5156192B2 (ja) 2006-01-24 2013-03-06 ギガフォトン株式会社 極端紫外光源装置
US8536549B2 (en) * 2006-04-12 2013-09-17 The Regents Of The University Of California Light source employing laser-produced plasma
JP5358060B2 (ja) * 2007-02-20 2013-12-04 ギガフォトン株式会社 極端紫外光源装置
US8399867B2 (en) * 2008-09-29 2013-03-19 Gigaphoton Inc. Extreme ultraviolet light source apparatus
JP5536401B2 (ja) 2008-10-16 2014-07-02 ギガフォトン株式会社 レーザ装置および極端紫外光光源装置
JP5426317B2 (ja) * 2008-10-23 2014-02-26 ギガフォトン株式会社 極端紫外光光源装置
JP5368261B2 (ja) 2008-11-06 2013-12-18 ギガフォトン株式会社 極端紫外光源装置、極端紫外光源装置の制御方法
JP5448775B2 (ja) * 2008-12-16 2014-03-19 ギガフォトン株式会社 極端紫外光源装置
JP5312959B2 (ja) 2009-01-09 2013-10-09 ギガフォトン株式会社 極端紫外光源装置
JP5603135B2 (ja) 2009-05-21 2014-10-08 ギガフォトン株式会社 チャンバ装置におけるターゲット軌道を計測及び制御する装置及び方法
JP5722061B2 (ja) 2010-02-19 2015-05-20 ギガフォトン株式会社 極端紫外光源装置及び極端紫外光の発生方法
US9113540B2 (en) 2010-02-19 2015-08-18 Gigaphoton Inc. System and method for generating extreme ultraviolet light
US9265136B2 (en) * 2010-02-19 2016-02-16 Gigaphoton Inc. System and method for generating extreme ultraviolet light
JP5802410B2 (ja) * 2010-03-29 2015-10-28 ギガフォトン株式会社 極端紫外光生成装置
US9072152B2 (en) 2010-03-29 2015-06-30 Gigaphoton Inc. Extreme ultraviolet light generation system utilizing a variation value formula for the intensity
US9072153B2 (en) 2010-03-29 2015-06-30 Gigaphoton Inc. Extreme ultraviolet light generation system utilizing a pre-pulse to create a diffused dome shaped target
US8462425B2 (en) 2010-10-18 2013-06-11 Cymer, Inc. Oscillator-amplifier drive laser with seed protection for an EUV light source
JP2012199512A (ja) 2011-03-10 2012-10-18 Gigaphoton Inc 極端紫外光生成装置及び極端紫外光生成方法
US8604452B2 (en) 2011-03-17 2013-12-10 Cymer, Llc Drive laser delivery systems for EUV light source
US9516730B2 (en) 2011-06-08 2016-12-06 Asml Netherlands B.V. Systems and methods for buffer gas flow stabilization in a laser produced plasma light source
JP6084223B2 (ja) * 2011-09-02 2017-02-22 エーエスエムエル ネザーランズ ビー.ブイ. 放射源
JP2013140771A (ja) 2011-12-09 2013-07-18 Gigaphoton Inc ターゲット供給装置
DE102012209837A1 (de) * 2012-06-12 2013-12-12 Trumpf Laser- Und Systemtechnik Gmbh EUV-Anregungslichtquelle mit einer Laserstrahlquelle und einer Strahlführungsvorrichtung zum Manipulieren des Laserstrahls
US8872143B2 (en) 2013-03-14 2014-10-28 Asml Netherlands B.V. Target for laser produced plasma extreme ultraviolet light source

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080067456A1 (en) 2006-04-13 2008-03-20 Xtreme Technologies Gmbh Arrangement for generating extreme ultraviolet radiation from a plasma generated by an energy beam with high conversion efficiency and minimum contamination
US20100303199A1 (en) 2008-01-28 2010-12-02 Media Lario S.R.L. Grazing incidence collector for laser produced plasma sources
JP2013004258A (ja) * 2011-06-15 2013-01-07 Gigaphoton Inc 極端紫外光生成装置及び極端紫外光の生成方法

Also Published As

Publication number Publication date
TWI690243B (zh) 2020-04-01
US20140264090A1 (en) 2014-09-18
US8927952B2 (en) 2015-01-06
US9232624B2 (en) 2016-01-05
US9107279B2 (en) 2015-08-11
US20140264087A1 (en) 2014-09-18
US8872143B2 (en) 2014-10-28
TW201444417A (zh) 2014-11-16
JP6397884B2 (ja) 2018-09-26
KR20150131084A (ko) 2015-11-24
JP2019207423A (ja) 2019-12-05
JP6799645B2 (ja) 2020-12-16
JP2018146988A (ja) 2018-09-20
TWI636709B (zh) 2018-09-21
WO2014143504A1 (en) 2014-09-18
KR102292882B1 (ko) 2021-08-24
KR20200105546A (ko) 2020-09-07
US20150342016A1 (en) 2015-11-26
US20150189729A1 (en) 2015-07-02
TW201838483A (zh) 2018-10-16
JP6563563B2 (ja) 2019-08-21
JP2016512382A (ja) 2016-04-25

Similar Documents

Publication Publication Date Title
KR102151765B1 (ko) 레이저 생성 플라즈마 극자외 광원용 타겟
JP7016840B2 (ja) 極紫外光源
KR102216594B1 (ko) 극자외 광원용 타겟
JP6970155B2 (ja) 極端紫外光源

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6