TWI636709B - 極紫外線(euv)光源及產生euv光之方法 - Google Patents

極紫外線(euv)光源及產生euv光之方法 Download PDF

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Publication number
TWI636709B
TWI636709B TW103108131A TW103108131A TWI636709B TW I636709 B TWI636709 B TW I636709B TW 103108131 A TW103108131 A TW 103108131A TW 103108131 A TW103108131 A TW 103108131A TW I636709 B TWI636709 B TW I636709B
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TW
Taiwan
Prior art keywords
pulse
radiation
target material
target
light
Prior art date
Application number
TW103108131A
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English (en)
Chinese (zh)
Other versions
TW201444417A (zh
Inventor
羅伯特Ｊ 拉法斯
陶業爭
Original Assignee
荷蘭商Ａｓｍｌ荷蘭公司
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Application filed by 荷蘭商Ａｓｍｌ荷蘭公司 filed Critical 荷蘭商Ａｓｍｌ荷蘭公司
Publication of TW201444417A publication Critical patent/TW201444417A/zh
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Publication of TWI636709B publication Critical patent/TWI636709B/zh

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam
    • H05G2/0088—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam for preconditioning the plasma generating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam
    • H05G2/0086—Optical arrangements for conveying the laser beam to the plasma generation location
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/025—Constructional details of solid state lasers, e.g. housings or mountings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • H05G2/0035—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state the material containing metals as principal radiation-generating components

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • X-Ray Techniques (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lasers (AREA)
  • Plasma Technology (AREA)
TW103108131A 2013-03-14 2014-03-10 極紫外線(euv)光源及產生euv光之方法 TWI636709B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/830,461 2013-03-14
US13/830,461 US8872143B2 (en) 2013-03-14 2013-03-14 Target for laser produced plasma extreme ultraviolet light source

Publications (2)

Publication Number Publication Date
TW201444417A TW201444417A (zh) 2014-11-16
TWI636709B true TWI636709B (zh) 2018-09-21

Family

ID=50072135

Family Applications (2)

Application Number Title Priority Date Filing Date
TW107123323A TWI690243B (zh) 2013-03-14 2014-03-10 極紫外線(euv)光源及產生euv光之方法
TW103108131A TWI636709B (zh) 2013-03-14 2014-03-10 極紫外線(euv)光源及產生euv光之方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW107123323A TWI690243B (zh) 2013-03-14 2014-03-10 極紫外線(euv)光源及產生euv光之方法

Country Status (5)

Country Link
US (4) US8872143B2 (enExample)
JP (3) JP6397884B2 (enExample)
KR (2) KR102292882B1 (enExample)
TW (2) TWI690243B (enExample)
WO (1) WO2014143504A1 (enExample)

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US9357625B2 (en) * 2014-07-07 2016-05-31 Asml Netherlands B.V. Extreme ultraviolet light source
US9538628B1 (en) 2015-06-11 2017-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Method for EUV power improvement with fuel droplet trajectory stabilization
US9713240B2 (en) 2015-08-12 2017-07-18 Asml Netherlands B.V. Stabilizing EUV light power in an extreme ultraviolet light source
US9820368B2 (en) 2015-08-12 2017-11-14 Asml Netherlands B.V. Target expansion rate control in an extreme ultraviolet light source
US9426872B1 (en) * 2015-08-12 2016-08-23 Asml Netherlands B.V. System and method for controlling source laser firing in an LPP EUV light source
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US20170311429A1 (en) * 2016-04-25 2017-10-26 Asml Netherlands B.V. Reducing the effect of plasma on an object in an extreme ultraviolet light source
WO2018029759A1 (ja) * 2016-08-08 2018-02-15 ギガフォトン株式会社 極端紫外光生成方法
US9778022B1 (en) 2016-09-14 2017-10-03 Asml Netherlands B.V. Determining moving properties of a target in an extreme ultraviolet light source
US10149375B2 (en) * 2016-09-14 2018-12-04 Asml Netherlands B.V. Target trajectory metrology in an extreme ultraviolet light source
WO2018083727A1 (ja) * 2016-11-01 2018-05-11 ギガフォトン株式会社 極端紫外光生成装置
CN110088682B (zh) * 2016-12-13 2022-06-10 Asml荷兰有限公司 辐射源设备和方法、光刻设备和检查设备
US11266002B2 (en) 2017-10-26 2022-03-01 Asml Netherlands B.V. System for monitoring a plasma
US10959318B2 (en) * 2018-01-10 2021-03-23 Kla-Tencor Corporation X-ray metrology system with broadband laser produced plasma illuminator
US10925142B2 (en) * 2018-07-31 2021-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. EUV radiation source for lithography exposure process
US11153959B2 (en) * 2018-08-17 2021-10-19 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for generating extreme ultraviolet radiation
NL2023633A (en) * 2018-09-25 2020-04-30 Asml Netherlands Bv Laser system for target metrology and alteration in an euv light source
NL2025013A (en) * 2019-03-07 2020-09-11 Asml Netherlands Bv Laser system for source material conditioning in an euv light source
TWI861161B (zh) 2019-08-15 2024-11-11 荷蘭商Ａｓｍｌ荷蘭公司 用於產生極紫外線輻射之裝置及方法
WO2021204481A1 (en) 2020-04-09 2021-10-14 Asml Netherlands B.V. Seed laser system for radiation source
JP7434096B2 (ja) 2020-07-30 2024-02-20 ギガフォトン株式会社 極端紫外光生成システム、及び電子デバイスの製造方法
KR20220030350A (ko) 2020-08-27 2022-03-11 삼성전자주식회사 광원 및 이를 이용한 극자외선 광원 시스템
KR20220030382A (ko) 2020-08-28 2022-03-11 삼성전자주식회사 극자외선 노광 방법 및 이를 이용한 반도체 제조 방법

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Also Published As

Publication number Publication date
KR102151765B1 (ko) 2020-09-04
WO2014143504A1 (en) 2014-09-18
KR20150131084A (ko) 2015-11-24
US20140264090A1 (en) 2014-09-18
US8927952B2 (en) 2015-01-06
US8872143B2 (en) 2014-10-28
JP6397884B2 (ja) 2018-09-26
KR20200105546A (ko) 2020-09-07
KR102292882B1 (ko) 2021-08-24
US20150342016A1 (en) 2015-11-26
TWI690243B (zh) 2020-04-01
US9107279B2 (en) 2015-08-11
JP6563563B2 (ja) 2019-08-21
US20140264087A1 (en) 2014-09-18
JP2019207423A (ja) 2019-12-05
TW201444417A (zh) 2014-11-16
JP6799645B2 (ja) 2020-12-16
JP2016512382A (ja) 2016-04-25
TW201838483A (zh) 2018-10-16
JP2018146988A (ja) 2018-09-20
US9232624B2 (en) 2016-01-05
US20150189729A1 (en) 2015-07-02

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