JP2004268104A5 - - Google Patents

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Publication number
JP2004268104A5
JP2004268104A5 JP2003063838A JP2003063838A JP2004268104A5 JP 2004268104 A5 JP2004268104 A5 JP 2004268104A5 JP 2003063838 A JP2003063838 A JP 2003063838A JP 2003063838 A JP2003063838 A JP 2003063838A JP 2004268104 A5 JP2004268104 A5 JP 2004268104A5
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JP
Japan
Prior art keywords
laser
cutting
laser beam
area
modified
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JP2003063838A
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English (en)
Japanese (ja)
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JP2004268104A (ja
JP4167094B2 (ja
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Priority to JP2003063838A priority Critical patent/JP4167094B2/ja
Priority claimed from JP2003063838A external-priority patent/JP4167094B2/ja
Publication of JP2004268104A publication Critical patent/JP2004268104A/ja
Publication of JP2004268104A5 publication Critical patent/JP2004268104A5/ja
Application granted granted Critical
Publication of JP4167094B2 publication Critical patent/JP4167094B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2003063838A 2003-03-10 2003-03-10 レーザ加工方法 Expired - Lifetime JP4167094B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003063838A JP4167094B2 (ja) 2003-03-10 2003-03-10 レーザ加工方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003063838A JP4167094B2 (ja) 2003-03-10 2003-03-10 レーザ加工方法

Publications (3)

Publication Number Publication Date
JP2004268104A JP2004268104A (ja) 2004-09-30
JP2004268104A5 true JP2004268104A5 (enExample) 2006-04-27
JP4167094B2 JP4167094B2 (ja) 2008-10-15

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ID=33125319

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JP2003063838A Expired - Lifetime JP4167094B2 (ja) 2003-03-10 2003-03-10 レーザ加工方法

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JP (1) JP4167094B2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100481337C (zh) * 2004-12-08 2009-04-22 雷射先进科技株式会社 被分割体的分割起点形成方法、被分割体的分割方法
WO2006062017A1 (ja) * 2004-12-08 2006-06-15 Laser Solutions Co., Ltd. 被分割体における分割起点形成方法、被分割体の分割方法、およびパルスレーザー光による被加工物の加工方法
JP4555092B2 (ja) * 2005-01-05 2010-09-29 株式会社ディスコ レーザー加工装置
US8153511B2 (en) 2005-05-30 2012-04-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP4845592B2 (ja) * 2005-05-30 2011-12-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4835830B2 (ja) * 2005-12-22 2011-12-14 株式会社東京精密 エキスパンド方法、装置及びダイシング装置
US8327666B2 (en) * 2009-02-19 2012-12-11 Corning Incorporated Method of separating strengthened glass
US8341976B2 (en) 2009-02-19 2013-01-01 Corning Incorporated Method of separating strengthened glass
JP2013503105A (ja) 2009-08-28 2013-01-31 コーニング インコーポレイテッド 化学強化ガラス基板からガラス品をレーザ割断するための方法
CN104487391B (zh) * 2012-08-21 2017-08-25 旭硝子株式会社 复合片的切断方法、玻璃片的切断方法
US9676167B2 (en) * 2013-12-17 2017-06-13 Corning Incorporated Laser processing of sapphire substrate and related applications
JP6260601B2 (ja) 2015-10-02 2018-01-17 日亜化学工業株式会社 半導体素子の製造方法
JP6991475B2 (ja) 2017-05-24 2022-01-12 協立化学産業株式会社 加工対象物切断方法
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
JP7339509B2 (ja) 2019-08-02 2023-09-06 日亜化学工業株式会社 発光素子の製造方法
KR102857400B1 (ko) 2019-09-30 2025-09-10 니치아 카가쿠 고교 가부시키가이샤 발광 소자의 제조 방법

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