JP6991475B2 - 加工対象物切断方法 - Google Patents
加工対象物切断方法 Download PDFInfo
- Publication number
- JP6991475B2 JP6991475B2 JP2017102743A JP2017102743A JP6991475B2 JP 6991475 B2 JP6991475 B2 JP 6991475B2 JP 2017102743 A JP2017102743 A JP 2017102743A JP 2017102743 A JP2017102743 A JP 2017102743A JP 6991475 B2 JP6991475 B2 JP 6991475B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- processed
- expandable sheet
- cutting
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/16—Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
Description
浸透性:隙間Gに浸透すること(粘度100mPa・s以下であること)
硬化性:高反応、且つ、深部硬化性があること
剥離性:硬化収縮が大きいこと、及び、加工対象物1への接着性が低く、且つ、
エキスパンドテープ6への接着性が高いこと。
エキスパンドテープ6を拡張する前に樹脂Rを塗布する位置は、加工対象物1の側面2から所定長離れた周囲であってもよいし、加工対象物1の外縁部であってもよい。この場合においても、チップ1aの切断面に残存するパーティクルを樹脂Rに付着させて、当該パーティクルを除去することが可能となる。
Claims (9)
- 加工対象物の表面又は裏面に拡張可能シートを貼り付ける第1工程と、
前記第1工程の後、切断予定ラインに沿って前記加工対象物にレーザ光を照射して改質領域を形成し、前記拡張可能シートを拡張することにより、前記加工対象物の少なくとも一部を複数のチップに分割すると共に、複数のチップ間に存在し且つ前記加工対象物の表面及び裏面と交差する側面に至る隙間を形成する第2工程と、
前記第2工程の後、前記加工対象物における前記側面を含む外縁部から前記隙間に樹脂を充填し、前記加工対象物における前記拡張可能シートを貼り付けていない前記表面又は前記裏面には前記樹脂を塗布しない第3工程と、
前記第3工程の後、前記樹脂を硬化させて収縮させる第4工程と、
前記第4工程の後、前記拡張可能シート上から前記チップを取り出す第5工程と、を含み、
前記第4工程では、前記樹脂を硬化させて、前記樹脂を前記チップから剥離するように収縮させる、加工対象物切断方法。 - 加工対象物の表面又は裏面に拡張可能シートを貼り付ける第1工程と、
前記第1工程の後、切断予定ラインに沿って前記加工対象物にレーザ光を照射して改質領域を形成し、前記拡張可能シートを拡張することにより、前記加工対象物の少なくとも一部を複数のチップに分割すると共に、複数のチップ間に存在し且つ前記加工対象物の表面及び裏面と交差する側面に至る隙間を形成する第2工程と、
前記第2工程において、前記拡張可能シートを拡張する前に樹脂を前記拡張可能シート上に塗布した後、前記拡張可能シートの拡張で前記隙間を形成しながら、塗布した前記樹脂を前記加工対象物における前記側面を含む外縁部から当該隙間に充填し、前記加工対象物における前記拡張可能シートを貼り付けていない前記表面又は前記裏面には前記樹脂を塗布しない第3工程と、
前記第3工程の後、前記樹脂を硬化させて収縮させる第4工程と、
前記第4工程の後、前記拡張可能シート上から前記チップを取り出す第5工程と、を含み、
前記第4工程では、前記樹脂を硬化させて、前記樹脂を前記チップから剥離するように収縮させる、加工対象物切断方法。 - 加工対象物の表面又は裏面に拡張可能シートを貼り付ける第1工程と、
前記第1工程の後、切断予定ラインに沿って前記加工対象物にレーザ光を照射して改質領域を形成し、前記拡張可能シートを拡張することにより、前記加工対象物の少なくとも一部を複数のチップに分割すると共に、複数のチップ間に存在し且つ前記加工対象物の表面及び裏面と交差する側面に至る隙間を形成する第2工程と、
前記第2工程の後、前記加工対象物における前記側面を含む外縁部から前記隙間に樹脂を充填し、前記加工対象物における前記拡張可能シートを貼り付けていない前記表面又は前記裏面には前記樹脂を塗布しない第3工程と、
前記第3工程の後、前記樹脂を硬化させて収縮させる第4工程と、
前記第4工程の後、前記拡張可能シート上から前記チップを取り出す第5工程と、を含み、
前記第5工程では、前記硬化した前記樹脂は、前記拡張可能シート上から取り出す前記チップの側面から剥離されている、加工対象物切断方法。 - 前記第3工程では、前記加工対象物の前記側面から所定長離れた周囲の少なくとも一部に前記樹脂を塗布することで、前記側面から前記隙間に樹脂を充填する、請求項1~3の何れか一項に記載の加工対象物切断方法。
- 前記第3工程では、前記加工対象物の前記外縁部の少なくとも一部に前記樹脂を塗布することで、前記外縁部から前記隙間に樹脂を充填する、請求項1~4の何れか一項に記載の加工対象物切断方法。
- 前記第3工程では、液体塗布機構により前記樹脂を塗布しながら、当該液体塗布機構を前記加工対象物の外縁に沿って移動させる、請求項1~5の何れか一項に記載の加工対象物切断方法。
- 前記第5工程では、前記チップを取り出すと共に、硬化した前記樹脂を前記拡張可能シート上に残す、請求項1~6の何れか一項に記載の加工対象物切断方法。
- 前記第5工程では、前記チップを取り出す前に、硬化した前記樹脂の少なくとも一部を除去する、請求項1~6の何れか一項に記載の加工対象物切断方法。
- 前記樹脂は、紫外線硬化樹脂であり、
前記第3工程では、前記樹脂に紫外線を照射して前記樹脂を硬化させると共に、前記拡張可能シートに紫外線を照射して前記拡張可能シートの粘着力を低下させる、請求項1~8の何れか一項に記載の加工対象物切断方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017102743A JP6991475B2 (ja) | 2017-05-24 | 2017-05-24 | 加工対象物切断方法 |
CN201880033106.8A CN110678965B (zh) | 2017-05-24 | 2018-05-17 | 加工对象物切割方法 |
DE112018002702.3T DE112018002702T5 (de) | 2017-05-24 | 2018-05-17 | Werkstück-schneideverfahren |
KR1020197035823A KR102380435B1 (ko) | 2017-05-24 | 2018-05-17 | 가공 대상물 절단 방법 |
US16/614,882 US11806805B2 (en) | 2017-05-24 | 2018-05-17 | Workpiece cutting method |
PCT/JP2018/019171 WO2018216600A1 (ja) | 2017-05-24 | 2018-05-17 | 加工対象物切断方法 |
TW107117451A TWI753169B (zh) | 2017-05-24 | 2018-05-23 | 加工對象物切斷方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017102743A JP6991475B2 (ja) | 2017-05-24 | 2017-05-24 | 加工対象物切断方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018198274A JP2018198274A (ja) | 2018-12-13 |
JP6991475B2 true JP6991475B2 (ja) | 2022-01-12 |
Family
ID=64396454
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017102743A Active JP6991475B2 (ja) | 2017-05-24 | 2017-05-24 | 加工対象物切断方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US11806805B2 (ja) |
JP (1) | JP6991475B2 (ja) |
KR (1) | KR102380435B1 (ja) |
CN (1) | CN110678965B (ja) |
DE (1) | DE112018002702T5 (ja) |
TW (1) | TWI753169B (ja) |
WO (1) | WO2018216600A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021132147A (ja) * | 2020-02-20 | 2021-09-09 | 協立化学産業株式会社 | 加工対象物切断方法及び樹脂塗布装置 |
KR102625710B1 (ko) * | 2021-09-24 | 2024-01-16 | 주식회사 루츠 | 형광체의 제조방법 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009088341A (ja) | 2007-10-01 | 2009-04-23 | Denso Corp | チップおよびウェハの加工方法 |
JP2013222936A (ja) | 2012-04-19 | 2013-10-28 | Disco Abrasive Syst Ltd | 板状物の加工方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2638155B2 (ja) * | 1988-11-08 | 1997-08-06 | 富士通株式会社 | 半導体チップの製造方法 |
JP4659300B2 (ja) * | 2000-09-13 | 2011-03-30 | 浜松ホトニクス株式会社 | レーザ加工方法及び半導体チップの製造方法 |
JP4358502B2 (ja) | 2002-03-12 | 2009-11-04 | 浜松ホトニクス株式会社 | 半導体基板の切断方法 |
TWI520269B (zh) * | 2002-12-03 | 2016-02-01 | Hamamatsu Photonics Kk | Cutting method of semiconductor substrate |
JP2004253628A (ja) * | 2003-02-20 | 2004-09-09 | Seiko Epson Corp | 半導体装置の製造方法 |
JP4167094B2 (ja) * | 2003-03-10 | 2008-10-15 | 浜松ホトニクス株式会社 | レーザ加工方法 |
CN1758986B (zh) * | 2003-03-12 | 2012-03-28 | 浜松光子学株式会社 | 激光加工方法 |
US7838331B2 (en) | 2005-11-16 | 2010-11-23 | Denso Corporation | Method for dicing semiconductor substrate |
JP4816406B2 (ja) * | 2005-11-16 | 2011-11-16 | 株式会社デンソー | ウェハの加工方法 |
JP4237745B2 (ja) | 2005-11-18 | 2009-03-11 | 浜松ホトニクス株式会社 | レーザ加工方法 |
US7422707B2 (en) | 2007-01-10 | 2008-09-09 | National Starch And Chemical Investment Holding Corporation | Highly conductive composition for wafer coating |
WO2008146744A1 (ja) * | 2007-05-25 | 2008-12-04 | Hamamatsu Photonics K.K. | 切断用加工方法 |
JP5783670B2 (ja) * | 2009-08-11 | 2015-09-24 | 武蔵エンジニアリング株式会社 | 液体材料の塗布方法、塗布装置およびプログラム |
JP5767478B2 (ja) | 2011-01-27 | 2015-08-19 | 古河電気工業株式会社 | 半導体ウエハ加工用テープの製造方法及び半導体ウエハ加工用テープ |
JP5607843B2 (ja) | 2012-07-26 | 2014-10-15 | 古河電気工業株式会社 | 半導体ウエハ加工用テープの製造方法及び半導体ウエハ加工用テープ |
JP2014041925A (ja) * | 2012-08-22 | 2014-03-06 | Hamamatsu Photonics Kk | 加工対象物切断方法 |
JP2014063813A (ja) * | 2012-09-20 | 2014-04-10 | Disco Abrasive Syst Ltd | 加工方法 |
KR102215918B1 (ko) | 2013-03-27 | 2021-02-16 | 하마마츠 포토닉스 가부시키가이샤 | 레이저 가공 장치 및 레이저 가공 방법 |
JP6054234B2 (ja) | 2013-04-22 | 2016-12-27 | 株式会社ディスコ | ウエーハの加工方法 |
JP2016001677A (ja) * | 2014-06-12 | 2016-01-07 | 株式会社ディスコ | ウエーハの加工方法 |
JP6370648B2 (ja) | 2014-09-09 | 2018-08-08 | 株式会社ディスコ | ワークの分割方法 |
-
2017
- 2017-05-24 JP JP2017102743A patent/JP6991475B2/ja active Active
-
2018
- 2018-05-17 WO PCT/JP2018/019171 patent/WO2018216600A1/ja active Application Filing
- 2018-05-17 DE DE112018002702.3T patent/DE112018002702T5/de active Pending
- 2018-05-17 US US16/614,882 patent/US11806805B2/en active Active
- 2018-05-17 KR KR1020197035823A patent/KR102380435B1/ko active IP Right Grant
- 2018-05-17 CN CN201880033106.8A patent/CN110678965B/zh active Active
- 2018-05-23 TW TW107117451A patent/TWI753169B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009088341A (ja) | 2007-10-01 | 2009-04-23 | Denso Corp | チップおよびウェハの加工方法 |
JP2013222936A (ja) | 2012-04-19 | 2013-10-28 | Disco Abrasive Syst Ltd | 板状物の加工方法 |
Also Published As
Publication number | Publication date |
---|---|
KR102380435B1 (ko) | 2022-03-31 |
US20200180075A1 (en) | 2020-06-11 |
TWI753169B (zh) | 2022-01-21 |
CN110678965A (zh) | 2020-01-10 |
WO2018216600A1 (ja) | 2018-11-29 |
CN110678965B (zh) | 2023-08-25 |
JP2018198274A (ja) | 2018-12-13 |
TW201901788A (zh) | 2019-01-01 |
DE112018002702T5 (de) | 2020-02-20 |
KR20200003177A (ko) | 2020-01-08 |
US11806805B2 (en) | 2023-11-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI501830B (zh) | Cutting method | |
JP5449665B2 (ja) | レーザ加工方法 | |
JP5134928B2 (ja) | 加工対象物研削方法 | |
JP5312761B2 (ja) | 切断用加工方法 | |
JP5491761B2 (ja) | レーザ加工装置 | |
JP6605278B2 (ja) | レーザ加工方法 | |
JP2012089709A (ja) | ワークの分割方法 | |
JP5177992B2 (ja) | 加工対象物切断方法 | |
JP2010188385A (ja) | 半導体ウェーハの製造方法 | |
WO2005088689A1 (ja) | 加工対象物切断方法 | |
JP7377308B2 (ja) | 切断方法、及び、チップ | |
JP2006202933A (ja) | ウエーハの分割方法 | |
JP6991475B2 (ja) | 加工対象物切断方法 | |
JP6029347B2 (ja) | ウエーハの加工方法 | |
JP2005142365A (ja) | ウエーハの分割方法 | |
JP6605277B2 (ja) | レーザ加工方法及びレーザ加工装置 | |
JP6957185B2 (ja) | 加工対象物切断方法及び半導体チップ | |
WO2021166696A1 (ja) | 加工対象物切断方法及び樹脂塗布装置 | |
JP2010108992A (ja) | 貼り合わせウエーハの分割方法及び該分割方法により製造されるデバイス | |
WO2018193972A1 (ja) | 加工対象物切断方法 | |
JP2014007333A (ja) | ウエーハの加工方法 | |
JP7063542B2 (ja) | 加工対象物切断方法 | |
JP7063543B2 (ja) | 加工対象物切断方法 | |
WO2018193962A1 (ja) | 加工対象物切断方法 | |
JP2018182142A (ja) | 加工対象物切断方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200513 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210209 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210317 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210608 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210805 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20211109 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20211126 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6991475 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |