JP2017503350A5 - - Google Patents
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- Publication number
- JP2017503350A5 JP2017503350A5 JP2016544081A JP2016544081A JP2017503350A5 JP 2017503350 A5 JP2017503350 A5 JP 2017503350A5 JP 2016544081 A JP2016544081 A JP 2016544081A JP 2016544081 A JP2016544081 A JP 2016544081A JP 2017503350 A5 JP2017503350 A5 JP 2017503350A5
- Authority
- JP
- Japan
- Prior art keywords
- chf
- chf2
- fluoroolefin
- gas mixture
- etching gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims description 33
- 238000005530 etching Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 230000003213 activating effect Effects 0.000 claims description 4
- JNCMHMUGTWEVOZ-UHFFFAOYSA-N F[CH]F Chemical compound F[CH]F JNCMHMUGTWEVOZ-UHFFFAOYSA-N 0.000 claims description 3
- 108010081348 HRT1 protein Hairy Proteins 0.000 claims description 3
- 102100021881 Hairy/enhancer-of-split related with YRPW motif protein 1 Human genes 0.000 claims description 3
- CDOOAUSHHFGWSA-OWOJBTEDSA-N (e)-1,3,3,3-tetrafluoroprop-1-ene Chemical compound F\C=C\C(F)(F)F CDOOAUSHHFGWSA-OWOJBTEDSA-N 0.000 claims 2
- FXRLMCRCYDHQFW-UHFFFAOYSA-N 2,3,3,3-tetrafluoropropene Chemical compound FC(=C)C(F)(F)F FXRLMCRCYDHQFW-UHFFFAOYSA-N 0.000 claims 2
- 150000001336 alkenes Chemical class 0.000 claims 2
- WBCLXFIDEDJGCC-UHFFFAOYSA-N hexafluoro-2-butyne Chemical compound FC(F)(F)C#CC(F)(F)F WBCLXFIDEDJGCC-UHFFFAOYSA-N 0.000 claims 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims 2
- LGPPATCNSOSOQH-UHFFFAOYSA-N 1,1,2,3,4,4-hexafluorobuta-1,3-diene Chemical compound FC(F)=C(F)C(F)=C(F)F LGPPATCNSOSOQH-UHFFFAOYSA-N 0.000 claims 1
- GAYKMYXILLFVRB-UHFFFAOYSA-N 1,1,3,4,4,4-hexafluorobuta-1,2-diene Chemical compound FC(F)=C=C(F)C(F)(F)F GAYKMYXILLFVRB-UHFFFAOYSA-N 0.000 claims 1
- UEOZRAZSBQVQKG-UHFFFAOYSA-N 2,2,3,3,4,4,5,5-octafluorooxolane Chemical compound FC1(F)OC(F)(F)C(F)(F)C1(F)F UEOZRAZSBQVQKG-UHFFFAOYSA-N 0.000 claims 1
- -1 HFO-1336mzz Chemical compound 0.000 claims 1
- 239000004341 Octafluorocyclobutane Substances 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 125000001153 fluoro group Chemical group F* 0.000 claims 1
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 claims 1
- 235000019407 octafluorocyclobutane Nutrition 0.000 claims 1
- QYSGYZVSCZSLHT-UHFFFAOYSA-N octafluoropropane Chemical compound FC(F)(F)C(F)(F)C(F)(F)F QYSGYZVSCZSLHT-UHFFFAOYSA-N 0.000 claims 1
- 229960004065 perflutren Drugs 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361921594P | 2013-12-30 | 2013-12-30 | |
| US61/921,594 | 2013-12-30 | ||
| PCT/US2014/071927 WO2015103003A1 (en) | 2013-12-30 | 2014-12-22 | Chamber cleaning and semiconductor etching gases |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018245836A Division JP6775569B2 (ja) | 2013-12-30 | 2018-12-27 | 半導体製造プロセスチャンバの操作方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017503350A JP2017503350A (ja) | 2017-01-26 |
| JP2017503350A5 true JP2017503350A5 (enExample) | 2017-11-09 |
| JP6462699B2 JP6462699B2 (ja) | 2019-01-30 |
Family
ID=52283000
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016544081A Active JP6462699B2 (ja) | 2013-12-30 | 2014-12-22 | チャンバクリーニング及び半導体エッチング用ガス |
| JP2018245836A Active JP6775569B2 (ja) | 2013-12-30 | 2018-12-27 | 半導体製造プロセスチャンバの操作方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018245836A Active JP6775569B2 (ja) | 2013-12-30 | 2018-12-27 | 半導体製造プロセスチャンバの操作方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US10109496B2 (enExample) |
| EP (1) | EP3090073B1 (enExample) |
| JP (2) | JP6462699B2 (enExample) |
| KR (2) | KR102476934B1 (enExample) |
| CN (2) | CN112981369B (enExample) |
| SG (2) | SG10201906117XA (enExample) |
| TW (2) | TWI650405B (enExample) |
| WO (1) | WO2015103003A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112981369B (zh) * | 2013-12-30 | 2023-11-10 | 科慕埃弗西有限公司 | 室清洁和半导体蚀刻气体 |
| JP2016207788A (ja) * | 2015-04-20 | 2016-12-08 | 東京エレクトロン株式会社 | 上部電極の表面処理方法、プラズマ処理装置及び上部電極 |
| KR20190038945A (ko) | 2016-08-29 | 2019-04-09 | 도쿄엘렉트론가부시키가이샤 | 실리콘 질화물의 준원자 층 에칭 방법 |
| KR102537742B1 (ko) | 2017-02-23 | 2023-05-26 | 도쿄엘렉트론가부시키가이샤 | 자가 정렬 블록 구조물들의 제조를 위한 실리콘 질화물 맨드렐의 이방성 추출 방법 |
| US10431470B2 (en) | 2017-02-23 | 2019-10-01 | Tokyo Electron Limited | Method of quasi-atomic layer etching of silicon nitride |
| KR102762670B1 (ko) * | 2017-11-30 | 2025-02-04 | 램 리써치 코포레이션 | 실리콘 옥사이드 실리콘 나이트라이드 스택 계단 단차 (stair step) 에칭 |
| EP3865468A4 (en) * | 2018-10-09 | 2023-01-11 | Daikin Industries, Ltd. | PROCESS FOR MANUFACTURING PERFLUOROALKYNE COMPOUND |
| JP7391297B2 (ja) * | 2019-06-28 | 2023-12-05 | 株式会社Flosfia | エッチング処理方法およびエッチング処理装置 |
| US11854773B2 (en) | 2020-03-31 | 2023-12-26 | Applied Materials, Inc. | Remote plasma cleaning of chambers for electronics manufacturing systems |
| KR102828130B1 (ko) | 2020-10-15 | 2025-07-03 | 가부시끼가이샤 레조낙 | 에칭 가스 및 그 제조 방법, 및 에칭 방법, 반도체 소자의 제조 방법 |
| JP7775835B2 (ja) | 2020-10-15 | 2025-11-26 | 株式会社レゾナック | エッチングガス及びその製造方法、並びに、エッチング方法、半導体素子の製造方法 |
| TWI748741B (zh) * | 2020-11-11 | 2021-12-01 | 暉盛科技股份有限公司 | 電漿晶圓清潔機及使用其清潔晶圓的方法 |
| KR102244885B1 (ko) * | 2021-02-03 | 2021-04-27 | (주)원익머트리얼즈 | 높은 선택비를 갖는 식각 가스 조성물과 이를 이용한 반도체 메모리 소자의 제조 공정 |
| KR102582730B1 (ko) * | 2021-04-07 | 2023-09-25 | (주)후성 | 플루오르화 시클로프로판 가스의 제조방법 및 이를 포함하는 에칭용 가스 조성물 |
| KR102919972B1 (ko) * | 2022-06-21 | 2026-01-28 | 세메스 주식회사 | 식각 가스 조성물, 기판 처리 장치, 및 이를 이용한 패턴 형성 방법 |
| WO2025019740A1 (en) * | 2023-07-20 | 2025-01-23 | The Chemours Company Fc, Llc | Compositions comprising 1,1,1,4,4,4-hexafluoro-2-butyne |
| WO2025259960A1 (en) * | 2024-06-14 | 2025-12-18 | Applied Materials, Inc. | Vapor phase alkali metal removal for in-situ cleaning of processing chamber |
| FR3170904A1 (fr) * | 2024-12-30 | 2026-07-03 | Arkema France | Purification d’une composition comprenant au moins une oléfine (hydro)halogénée |
| WO2026164176A1 (ja) * | 2025-01-31 | 2026-08-06 | ダイキン工業株式会社 | ヘキサフルオロ－２－ブチンを含有するエッチングガス |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09191002A (ja) * | 1996-01-10 | 1997-07-22 | Sony Corp | プラズマエッチング方法 |
| US5824375A (en) | 1996-10-24 | 1998-10-20 | Applied Materials, Inc. | Decontamination of a plasma reactor using a plasma after a chamber clean |
| US6242359B1 (en) | 1997-08-20 | 2001-06-05 | Air Liquide America Corporation | Plasma cleaning and etching methods using non-global-warming compounds |
| US6849193B2 (en) * | 1999-03-25 | 2005-02-01 | Hoiman Hung | Highly selective process for etching oxide over nitride using hexafluorobutadiene |
| TWI290741B (en) * | 2000-11-08 | 2007-12-01 | Daikin Ind Ltd | Dry etching gas and method for dry etching |
| JP2002280376A (ja) * | 2001-03-22 | 2002-09-27 | Research Institute Of Innovative Technology For The Earth | Ｃｖｄ装置のクリーニング方法およびそのためのクリーニング装置 |
| US6800210B2 (en) * | 2001-05-22 | 2004-10-05 | Reflectivity, Inc. | Method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants |
| JP2003234299A (ja) * | 2002-02-12 | 2003-08-22 | Research Institute Of Innovative Technology For The Earth | クリーニングガス及びエッチングガス |
| JP3527915B2 (ja) | 2002-03-27 | 2004-05-17 | 株式会社ルネサステクノロジ | Ｃｖｄ装置およびそれを用いたｃｖｄ装置のクリーニング方法 |
| JP4164643B2 (ja) * | 2002-07-17 | 2008-10-15 | 日本ゼオン株式会社 | ドライエッチング方法及びパーフルオロ−２−ペンチンの製造方法 |
| JP2005142198A (ja) * | 2003-11-04 | 2005-06-02 | Taiyo Nippon Sanso Corp | クリーニングガス及びクリーニング方法 |
| US20050258137A1 (en) * | 2004-03-24 | 2005-11-24 | Sawin Herbert H | Remote chamber methods for removing surface deposits |
| BRPI0508204A (pt) * | 2004-03-24 | 2007-07-17 | Massachusetts Inst Technology | método de remoção de depósitos de uma superfìcie |
| JP2006156992A (ja) * | 2004-11-05 | 2006-06-15 | Tokyo Electron Ltd | プラズマ処理方法 |
| CN101777492A (zh) * | 2004-11-05 | 2010-07-14 | 东京毅力科创株式会社 | 等离子体蚀刻加工方法 |
| US8187415B2 (en) | 2006-04-21 | 2012-05-29 | Applied Materials, Inc. | Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zone |
| JP2008244144A (ja) | 2007-03-27 | 2008-10-09 | Toshiba Corp | 半導体装置の製造方法 |
| JP5226296B2 (ja) * | 2007-12-27 | 2013-07-03 | 東京エレクトロン株式会社 | プラズマエッチング方法、プラズマエッチング装置、制御プログラム及びコンピュータ記憶媒体 |
| US8614151B2 (en) * | 2008-01-04 | 2013-12-24 | Micron Technology, Inc. | Method of etching a high aspect ratio contact |
| JP2011124239A (ja) | 2008-03-31 | 2011-06-23 | Daikin Industries Ltd | ドライエッチングガス及びそれを用いたドライエッチング方法 |
| JP5266902B2 (ja) * | 2008-06-20 | 2013-08-21 | 日本ゼオン株式会社 | 含フッ素オレフィン化合物の製造方法 |
| JP2012519741A (ja) * | 2009-03-06 | 2012-08-30 | ゾルファイ フルーオル ゲゼルシャフト ミット ベシュレンクテル ハフツング | 不飽和ヒドロフルオロカーボンの使用 |
| JP5434970B2 (ja) * | 2010-07-12 | 2014-03-05 | セントラル硝子株式会社 | ドライエッチング剤 |
| JP2013030531A (ja) * | 2011-07-27 | 2013-02-07 | Central Glass Co Ltd | ドライエッチング剤 |
| CN112981369B (zh) * | 2013-12-30 | 2023-11-10 | 科慕埃弗西有限公司 | 室清洁和半导体蚀刻气体 |
-
2014
- 2014-12-22 CN CN202110175233.5A patent/CN112981369B/zh active Active
- 2014-12-22 SG SG10201906117XA patent/SG10201906117XA/en unknown
- 2014-12-22 KR KR1020227016479A patent/KR102476934B1/ko active Active
- 2014-12-22 JP JP2016544081A patent/JP6462699B2/ja active Active
- 2014-12-22 CN CN201480076636.2A patent/CN106414798B/zh active Active
- 2014-12-22 SG SG11201605356PA patent/SG11201605356PA/en unknown
- 2014-12-22 EP EP14824327.2A patent/EP3090073B1/en active Active
- 2014-12-22 WO PCT/US2014/071927 patent/WO2015103003A1/en not_active Ceased
- 2014-12-22 KR KR1020167017394A patent/KR102400322B1/ko active Active
- 2014-12-22 US US15/106,889 patent/US10109496B2/en active Active
- 2014-12-27 TW TW103145901A patent/TWI650405B/zh active
- 2014-12-27 TW TW107147635A patent/TWI703206B/zh active
-
2018
- 2018-08-28 US US16/114,823 patent/US20180366339A1/en not_active Abandoned
- 2018-09-27 US US16/143,760 patent/US20190027375A1/en not_active Abandoned
- 2018-12-27 JP JP2018245836A patent/JP6775569B2/ja active Active
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