JP2017503350A5 - - Google Patents

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Publication number
JP2017503350A5
JP2017503350A5 JP2016544081A JP2016544081A JP2017503350A5 JP 2017503350 A5 JP2017503350 A5 JP 2017503350A5 JP 2016544081 A JP2016544081 A JP 2016544081A JP 2016544081 A JP2016544081 A JP 2016544081A JP 2017503350 A5 JP2017503350 A5 JP 2017503350A5
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JP
Japan
Prior art keywords
chf
chf2
fluoroolefin
gas mixture
etching gas
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JP2016544081A
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English (en)
Japanese (ja)
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JP2017503350A (ja
JP6462699B2 (ja
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Priority claimed from PCT/US2014/071927 external-priority patent/WO2015103003A1/en
Publication of JP2017503350A publication Critical patent/JP2017503350A/ja
Publication of JP2017503350A5 publication Critical patent/JP2017503350A5/ja
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Publication of JP6462699B2 publication Critical patent/JP6462699B2/ja
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JP2016544081A 2013-12-30 2014-12-22 チャンバクリーニング及び半導体エッチング用ガス Active JP6462699B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361921594P 2013-12-30 2013-12-30
US61/921,594 2013-12-30
PCT/US2014/071927 WO2015103003A1 (en) 2013-12-30 2014-12-22 Chamber cleaning and semiconductor etching gases

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018245836A Division JP6775569B2 (ja) 2013-12-30 2018-12-27 半導体製造プロセスチャンバの操作方法

Publications (3)

Publication Number Publication Date
JP2017503350A JP2017503350A (ja) 2017-01-26
JP2017503350A5 true JP2017503350A5 (enExample) 2017-11-09
JP6462699B2 JP6462699B2 (ja) 2019-01-30

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ID=52283000

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2016544081A Active JP6462699B2 (ja) 2013-12-30 2014-12-22 チャンバクリーニング及び半導体エッチング用ガス
JP2018245836A Active JP6775569B2 (ja) 2013-12-30 2018-12-27 半導体製造プロセスチャンバの操作方法

Family Applications After (1)

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JP2018245836A Active JP6775569B2 (ja) 2013-12-30 2018-12-27 半導体製造プロセスチャンバの操作方法

Country Status (8)

Country Link
US (3) US10109496B2 (enExample)
EP (1) EP3090073B1 (enExample)
JP (2) JP6462699B2 (enExample)
KR (2) KR102400322B1 (enExample)
CN (2) CN112981369B (enExample)
SG (2) SG11201605356PA (enExample)
TW (2) TWI650405B (enExample)
WO (1) WO2015103003A1 (enExample)

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JP2016207788A (ja) * 2015-04-20 2016-12-08 東京エレクトロン株式会社 上部電極の表面処理方法、プラズマ処理装置及び上部電極
US10312102B2 (en) * 2016-08-29 2019-06-04 Tokyo Electron Limited Method of quasi-atomic layer etching of silicon nitride
TWI761461B (zh) 2017-02-23 2022-04-21 日商東京威力科創股份有限公司 用於製造自對準塊體結構之矽氮化物心軸的異向性抽出方法
KR102537097B1 (ko) 2017-02-23 2023-05-25 도쿄엘렉트론가부시키가이샤 실리콘 질화물의 유사 원자층 에칭 방법
KR102762670B1 (ko) * 2017-11-30 2025-02-04 램 리써치 코포레이션 실리콘 옥사이드 실리콘 나이트라이드 스택 계단 단차 (stair step) 에칭
SG11202103664WA (en) * 2018-10-09 2021-05-28 Daikin Ind Ltd Process for producing perfluoroalkyne compound
JP7391297B2 (ja) * 2019-06-28 2023-12-05 株式会社Flosfia エッチング処理方法およびエッチング処理装置
US11854773B2 (en) * 2020-03-31 2023-12-26 Applied Materials, Inc. Remote plasma cleaning of chambers for electronics manufacturing systems
CN116325090A (zh) * 2020-10-15 2023-06-23 株式会社力森诺科 蚀刻气体及其制造方法、蚀刻方法以及半导体元件的制造方法
IL302125A (en) 2020-10-15 2023-06-01 Resonac Corp Etching gas, method for manufacturing the same, etching method and method for manufacturing a semiconductor element
TWI748741B (zh) * 2020-11-11 2021-12-01 暉盛科技股份有限公司 電漿晶圓清潔機及使用其清潔晶圓的方法
KR102244885B1 (ko) * 2021-02-03 2021-04-27 (주)원익머트리얼즈 높은 선택비를 갖는 식각 가스 조성물과 이를 이용한 반도체 메모리 소자의 제조 공정
KR102582730B1 (ko) * 2021-04-07 2023-09-25 (주)후성 플루오르화 시클로프로판 가스의 제조방법 및 이를 포함하는 에칭용 가스 조성물
WO2025019740A1 (en) * 2023-07-20 2025-01-23 The Chemours Company Fc, Llc Compositions comprising 1,1,1,4,4,4-hexafluoro-2-butyne
WO2025259960A1 (en) * 2024-06-14 2025-12-18 Applied Materials, Inc. Vapor phase alkali metal removal for in-situ cleaning of processing chamber

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JPH09191002A (ja) * 1996-01-10 1997-07-22 Sony Corp プラズマエッチング方法
US5824375A (en) 1996-10-24 1998-10-20 Applied Materials, Inc. Decontamination of a plasma reactor using a plasma after a chamber clean
WO1999008805A1 (en) 1997-08-20 1999-02-25 Air Liquide Electronics Chemicals & Services, Inc. Plasma cleaning and etching methods using non-global-warming compounds
US6849193B2 (en) * 1999-03-25 2005-02-01 Hoiman Hung Highly selective process for etching oxide over nitride using hexafluorobutadiene
WO2002039494A1 (en) * 2000-11-08 2002-05-16 Daikin Industries, Ltd. Dry etching gas and method for dry etching
JP2002280376A (ja) * 2001-03-22 2002-09-27 Research Institute Of Innovative Technology For The Earth Ｃｖｄ装置のクリーニング方法およびそのためのクリーニング装置
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JP5266902B2 (ja) * 2008-06-20 2013-08-21 日本ゼオン株式会社 含フッ素オレフィン化合物の製造方法
EP2403901A1 (en) 2009-03-06 2012-01-11 Solvay Fluor GmbH Use of unsaturated hydrofluorocarbons
JP5434970B2 (ja) * 2010-07-12 2014-03-05 セントラル硝子株式会社 ドライエッチング剤
JP2013030531A (ja) 2011-07-27 2013-02-07 Central Glass Co Ltd ドライエッチング剤
KR102400322B1 (ko) * 2013-12-30 2022-05-20 더 케무어스 컴퍼니 에프씨, 엘엘씨 챔버 세정 및 반도체 식각 기체

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