JP2017227854A - 表示装置 - Google Patents
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- Publication number
- JP2017227854A JP2017227854A JP2016149173A JP2016149173A JP2017227854A JP 2017227854 A JP2017227854 A JP 2017227854A JP 2016149173 A JP2016149173 A JP 2016149173A JP 2016149173 A JP2016149173 A JP 2016149173A JP 2017227854 A JP2017227854 A JP 2017227854A
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- Japan
- Prior art keywords
- transistor
- light receiving
- display
- electrode
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
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- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
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- -1 nickel metal hydride Chemical class 0.000 description 1
- QELJHCBNGDEXLD-UHFFFAOYSA-N nickel zinc Chemical compound [Ni].[Zn] QELJHCBNGDEXLD-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
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- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
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- BSWGGJHLVUUXTL-UHFFFAOYSA-N silver zinc Chemical compound [Zn].[Ag] BSWGGJHLVUUXTL-UHFFFAOYSA-N 0.000 description 1
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- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
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Abstract
Description
本実施の形態では、本発明の一態様の表示装置の構成例及び駆動方法について説明する。
図1(A)は、本発明の一態様の表示装置10のブロック図である。表示装置10は、表示領域12、回路13、回路14及び回路15を有する。表示領域12には、複数の画素ユニット11が配置されている。
図2(A)に、画素ユニット11の回路図の例を示す。画素ユニット11は受光回路20と画素回路30が電気的に接続された構成を有する。本構成例では、画素回路30の表示素子31として発光素子を適用した場合の例を示す。図2(A)等に示す回路では、発光素子だけでなく、素子に流れる電流、または素子にかかる電圧によりその階調が変化する様々な素子を適用することができる。
図3には、図2(A)で例示した画素ユニット11と比較し、受光回路20の一部が異なる例を示している。具体的には、図2(A)で示した例におけるトランジスタ22が設けられず、受光素子21のアノードがノードnに接続されている。
上記では、画素ユニット11において、1つの受光回路20が1つの画素回路30と接続する例を示したが、1つの受光回路20に、複数の画素回路30を接続する構成とすることができる。
表示素子31に発光素子を適用した画素回路30としては、図2(A)等に示した構成に限られず、様々な回路を用いることができる。
以下では、図6(A)を用いて表示素子31に液晶素子を適用した場合の画素ユニット11の構成例を説明する。なお図6(A)に示す回路では、液晶素子だけでなく、素子にかかる電圧によりその階調が変化する様々な素子を適用することができる。
以下では、被検知体の近接または接触を検知するタッチパネルとしての機能を付加した表示装置の構成例について説明する。
図8に、本発明の一態様の表示装置の、表示領域の断面構造を一例として示す。なお、図8では、図2(A)における受光素子21、表示素子31、トランジスタ33、及び容量素子34の断面構造を例示している。
本実施の形態では、上記実施の形態に示した各種トランジスタに置き換えて用いることができるトランジスタの一例について、図面を用いて説明する。
図9(A1)は、ボトムゲート型のトランジスタの一種であるチャネル保護型のトランジスタ810の断面図である。図9(A1)において、トランジスタ810は基板771上に形成されている。また、トランジスタ810は、基板771上に絶縁層772を介して電極746を有する。また、電極746上に絶縁層726を介して半導体層742を有する。電極746はゲート電極として機能できる。絶縁層726はゲート絶縁層として機能できる。
図10(A1)に、トップゲート型のトランジスタの一種であるトランジスタ830の断面図を示す。トランジスタ830は、絶縁層772の上に半導体層742を有し、半導体層742および絶縁層772上に、半導体層742の一部に接する電極744a、および半導体層742の一部に接する電極744bを有し、半導体層742、電極744a、および電極744b上に絶縁層726を有し、絶縁層726上に電極746を有する。
<CAC−OSの構成>
以下では、本発明の一態様で開示されるトランジスタに用いることができるCAC(Cloud Aligned Complementary)−OSの構成について説明する。
続いて、各種測定方法を用い、基板上に成膜した酸化物半導体について測定を行った結果について説明する。
以下では、本発明の一態様に係る9個の試料について説明する。各試料は、それぞれ、酸化物半導体を成膜する際の基板温度、および酸素ガス流量比を異なる条件で作製する。なお、試料は、基板と、基板上の酸化物半導体と、を有する構造である。
本項目では、9個の試料に対し、X線回折(XRD:X−ray diffraction)測定を行った結果について説明する。なお、XRD装置として、Bruker社製D8 ADVANCEを用いた。また、条件は、Out−of−plane法によるθ/2θスキャンにて、走査範囲を15deg.乃至50deg.、ステップ幅を0.02deg.、走査速度を3.0deg./分とした。
本項目では、成膜時の基板温度R.T.、および酸素ガス流量比10%で作製した試料を、HAADF(High−Angle Annular Dark Field)−STEM(Scanning Transmission Electron Microscope)によって観察、および解析した結果について説明する(以下、HAADF−STEMによって取得した像は、TEM像ともいう。)。
本項目では、成膜時の基板温度R.T.、および酸素ガス流量比10%で作製した試料に、プローブ径が1nmの電子線(ナノビーム電子線ともいう。)を照射することで、電子線回折パターンを取得した結果について説明する。
本項目では、エネルギー分散型X線分光法(EDX:Energy Dispersive X−ray spectroscopy)を用い、EDXマッピングを取得し、評価することによって、成膜時の基板温度R.T.、および酸素ガス流量比10%で作製した試料の元素分析を行った結果について説明する。なお、EDX測定には、元素分析装置として日本電子株式会社製エネルギー分散型X線分析装置JED−2300Tを用いる。なお、試料から放出されたX線の検出にはSiドリフト検出器を用いる。
本実施の形態では、本発明の一態様の表示装置を有する表示モジュール及び電子機器について、図12乃至図17を用いて説明を行う。
11 画素ユニット
12 表示領域
13 回路
14 回路
15 回路
16 回路
17 回路
18 回路
19 回路
20 受光回路
21 受光素子
22 トランジスタ
23 トランジスタ
24 容量素子
30 画素回路
30a 画素回路
30b 画素回路
30c 画素回路
30d 画素回路
30e 画素回路
30f 画素回路
31 表示素子
32 トランジスタ
33 トランジスタ
34 容量素子
35 トランジスタ
36 トランジスタ
37 トランジスタ
40a 画素回路
40b 画素回路
40c 画素回路
40d 画素回路
41 液晶素子
42 トランジスタ
43 容量素子
44 容量素子
50 表示装置
51 受光素子
52 トランジスタ
53 トランジスタ
54 トランジスタ
55 トランジスタ
61 トランジスタ
62 トランジスタ
66 トランジスタ
67 抵抗素子
400 基板
401 導電層
402 絶縁層
403 半導体層
404 導電層
405 導電層
406 半導体層
407 半導体層
408 半導体層
409 導電層
410 導電層
411 絶縁層
412 導電層
413 導電層
420 絶縁層
421 導電層
422 導電層
423 絶縁層
424 導電層
425 絶縁層
426 絶縁層
427 EL層
428 導電層
430 基板
431 遮蔽層
432 着色層
705 絶縁層
706 電極
707 絶縁層
708 半導体層
710 絶縁層
711 絶縁層
714 電極
715 電極
722 絶縁層
723 電極
726 絶縁層
727 絶縁層
728 絶縁層
729 絶縁層
741 絶縁層
742 半導体層
744a 電極
744b 電極
746 電極
755 不純物
771 基板
772 絶縁層
810 トランジスタ
811 トランジスタ
820 トランジスタ
821 トランジスタ
825 トランジスタ
826 トランジスタ
830 トランジスタ
831 トランジスタ
840 トランジスタ
841 トランジスタ
842 トランジスタ
843 トランジスタ
844 トランジスタ
845 トランジスタ
846 トランジスタ
847 トランジスタ
5000 筐体
5001 表示部
5002 表示部
5003 スピーカ
5004 LEDランプ
5005 操作キー
5006 接続端子
5007 センサ
5008 マイクロフォン
5009 スイッチ
5010 赤外線ポート
5011 記録媒体読込部
5012 スタンド
5013 リモコン操作機
5014 アンテナ
5015 シャッターボタン
5016 受像部
5017 充電器
5018 バンド
5019 留め金
5020 アイコン
5021 アイコン
7000 表示部
7001 表示部
7100 携帯電話機
7101 筐体
7103 操作ボタン
7104 外部接続ポート
7105 スピーカ
7106 マイク
7200 テレビジョン装置
7201 筐体
7203 スタンド
7211 リモコン操作機
7300 携帯情報端末
7301 筐体
7302 操作ボタン
7303 情報
7304 情報
7305 情報
7306 情報
7310 携帯情報端末
7320 携帯情報端末
7400 照明装置
7401 台部
7402 発光部
7403 操作スイッチ
7410 照明装置
7412 発光部
7420 照明装置
7422 発光部
7500 携帯情報端末
7501 筐体
7502 部材
7503 操作ボタン
7600 携帯情報端末
7601 筐体
7602 ヒンジ
7650 携帯情報端末
7651 非表示部
7700 携帯情報端末
7701 筐体
7703a ボタン
7703b ボタン
7704a スピーカ
7704b スピーカ
7705 外部接続ポート
7706 マイク
7709 バッテリ
7800 携帯情報端末
7801 バンド
7802 入出力端子
7803 操作ボタン
7804 アイコン
7805 バッテリ
7900 携帯情報端末
7901 表示部
7902 筐体
7903 筐体
7904 バンド
7905 操作ボタン
8000 表示モジュール
8001 上部カバー
8002 下部カバー
8003 FPC
8004 タッチパネル
8009 フレーム
8010 プリント基板
8011 バッテリ
Claims (10)
- 第1の受光素子を有する第1の受光回路と、表示素子を有する画素回路を有し、
前記第1の受光素子の露光量の変化に応じて、前記表示素子の階調が変化する、
表示装置。 - 請求項1において、
前記露光量が減少することに応じて、前記表示素子の階調が低くなる、
表示装置。 - 請求項1または請求項2において、
前記表示素子は、発光素子または液晶素子である、
表示装置。 - 請求項1乃至請求項3のいずれか一において、
前記画素回路と、前記第1の受光回路とは、同一基板上に形成された、
表示装置。 - 第1の受光回路と、画素回路を有する表示装置であって、
前記第1の受光回路は、第1の受光素子と、前記第1の受光素子と直列に接続された第1のトランジスタを有し、
前記画素回路は、発光素子と、前記発光素子と直列に接続された第2のトランジスタを有し、
前記第2のトランジスタは、第1のゲート及び第2のゲートを有し、
前記第1の受光素子と前記第1のトランジスタの間の第1のノードと、前記第2のトランジスタの前記第1のゲートまたは前記第2のゲートのいずれか一方とが、電気的に接続された、
表示装置。 - 第1の受光回路と、画素回路を有する表示装置であって、
前記第1の受光回路は、第1の受光素子と、前記第1の受光素子と直列に接続された第1のトランジスタを有し、
前記画素回路は、液晶素子と、前記液晶素子と直列に接続された第3のトランジスタを有し、
前記第1の受光素子と前記第1のトランジスタの間の第1のノードと、前記第3のトランジスタと前記液晶素子との間の第3のノードとが、電気的に接続された、
表示装置。 - 請求項5または請求項6において、
前記第1の受光回路は、前記第1の受光素子と前記第1のトランジスタとの間に直列に接続された第4のトランジスタを有し、
前記第1のノードは、前記第1のトランジスタと前記第4のトランジスタの間のノードであり、
前記第1のトランジスタが導通状態であり、且つ前記第4のトランジスタが非導通状態であるときに、前記第1のノードの電位がリセットされ、
前記第1のトランジスタが非導通状態であり、且つ前記第4のトランジスタが導通状態であるときに、前記第1のノードの電位が前記第1の受光素子における露光量に応じた電位に更新され、
前記第1のトランジスタ及び前記第4のトランジスタが非導通状態のときに、前記第1のノードの電位が保持される、
表示装置。 - 請求項7において、
前記第4のトランジスタは、チャネルが形成される半導体に酸化物半導体を含む、
表示装置。 - 請求項5乃至請求項8のいずれか一において、
前記第1のトランジスタは、チャネルが形成される半導体に酸化物半導体を含む、
表示装置。 - 請求項1乃至請求項9のいずれか一において、
第2の受光素子を有する第2の受光回路と、回路と、を有し、
前記第2の受光回路は、前記第2の受光素子の露光量に基づく信号を出力する機能を有し、
前記回路は、前記信号に基づいてタッチ動作を検出する機能を有する、
表示装置。
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US20170032728A1 (en) | 2017-02-02 |
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