JP2017220526A5 - - Google Patents
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- Publication number
- JP2017220526A5 JP2017220526A5 JP2016112732A JP2016112732A JP2017220526A5 JP 2017220526 A5 JP2017220526 A5 JP 2017220526A5 JP 2016112732 A JP2016112732 A JP 2016112732A JP 2016112732 A JP2016112732 A JP 2016112732A JP 2017220526 A5 JP2017220526 A5 JP 2017220526A5
- Authority
- JP
- Japan
- Prior art keywords
- dopant
- substrate
- ligand
- film
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002019 doping agent Substances 0.000 claims 51
- 239000000758 substrate Substances 0.000 claims 17
- 239000007789 gas Substances 0.000 claims 16
- 239000003446 ligand Substances 0.000 claims 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 13
- 229910052710 silicon Inorganic materials 0.000 claims 13
- 239000010703 silicon Substances 0.000 claims 13
- 238000000034 method Methods 0.000 claims 11
- 239000004065 semiconductor Substances 0.000 claims 10
- 238000004519 manufacturing process Methods 0.000 claims 9
- 238000010438 heat treatment Methods 0.000 claims 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 229910000039 hydrogen halide Inorganic materials 0.000 claims 1
- 239000012433 hydrogen halide Substances 0.000 claims 1
- 239000012299 nitrogen atmosphere Substances 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016112732A JP6630237B2 (ja) | 2016-06-06 | 2016-06-06 | 半導体装置の製造方法、基板処理装置及びプログラム |
| KR1020170068180A KR101922593B1 (ko) | 2016-06-06 | 2017-06-01 | 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 |
| US15/613,807 US10388762B2 (en) | 2016-06-06 | 2017-06-05 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016112732A JP6630237B2 (ja) | 2016-06-06 | 2016-06-06 | 半導体装置の製造方法、基板処理装置及びプログラム |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017220526A JP2017220526A (ja) | 2017-12-14 |
| JP2017220526A5 true JP2017220526A5 (enExample) | 2018-10-18 |
| JP6630237B2 JP6630237B2 (ja) | 2020-01-15 |
Family
ID=60483946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016112732A Active JP6630237B2 (ja) | 2016-06-06 | 2016-06-06 | 半導体装置の製造方法、基板処理装置及びプログラム |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US10388762B2 (enExample) |
| JP (1) | JP6630237B2 (enExample) |
| KR (1) | KR101922593B1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112567497A (zh) * | 2018-08-11 | 2021-03-26 | 应用材料公司 | 掺杂技术 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3115393A (en) * | 1961-04-25 | 1963-12-24 | Gen Electric | Process for boron production |
| US5183777A (en) | 1987-12-30 | 1993-02-02 | Fujitsu Limited | Method of forming shallow junctions |
| JPH02132823A (ja) * | 1987-12-30 | 1990-05-22 | Fujitsu Ltd | 浅い接合を形成する方法及びその浅い接合を有する半導体装置 |
| JPH0457319A (ja) * | 1990-06-27 | 1992-02-25 | Toshiba Corp | 単結晶薄膜の形成方法 |
| JPH08330246A (ja) | 1995-05-31 | 1996-12-13 | Toshiba Corp | 多結晶シリコン膜の成膜方法 |
| US6555451B1 (en) * | 2001-09-28 | 2003-04-29 | The United States Of America As Represented By The Secretary Of The Navy | Method for making shallow diffusion junctions in semiconductors using elemental doping |
| US6664198B1 (en) * | 2002-07-03 | 2003-12-16 | Micron Technology, Inc. | Method of forming a silicon nitride dielectric layer |
| US7232631B2 (en) | 2003-05-08 | 2007-06-19 | Dai Nippon Prinitng Co., Ltd. | Mask for charged particle beam exposure, and method of forming the same |
| US7604830B2 (en) | 2004-06-24 | 2009-10-20 | Cook Incorporated | Method and apparatus for coating interior surfaces of medical devices |
| JP5384852B2 (ja) | 2008-05-09 | 2014-01-08 | 株式会社日立国際電気 | 半導体装置の製造方法及び半導体製造装置 |
| US8012859B1 (en) * | 2010-03-31 | 2011-09-06 | Tokyo Electron Limited | Atomic layer deposition of silicon and silicon-containing films |
| US8580664B2 (en) | 2011-03-31 | 2013-11-12 | Tokyo Electron Limited | Method for forming ultra-shallow boron doping regions by solid phase diffusion |
| WO2012135599A1 (en) | 2011-03-31 | 2012-10-04 | Tokyo Electron Limited | Method for forming ultra-shallow doping regions by solid phase diffusion |
| JP5815443B2 (ja) * | 2012-03-19 | 2015-11-17 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
| JP2014192485A (ja) | 2013-03-28 | 2014-10-06 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法、基板処理方法及び基板処理装置 |
-
2016
- 2016-06-06 JP JP2016112732A patent/JP6630237B2/ja active Active
-
2017
- 2017-06-01 KR KR1020170068180A patent/KR101922593B1/ko active Active
- 2017-06-05 US US15/613,807 patent/US10388762B2/en active Active
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