KR101922593B1 - 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 - Google Patents

반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 Download PDF

Info

Publication number
KR101922593B1
KR101922593B1 KR1020170068180A KR20170068180A KR101922593B1 KR 101922593 B1 KR101922593 B1 KR 101922593B1 KR 1020170068180 A KR1020170068180 A KR 1020170068180A KR 20170068180 A KR20170068180 A KR 20170068180A KR 101922593 B1 KR101922593 B1 KR 101922593B1
Authority
KR
South Korea
Prior art keywords
dopant
film
gas
substrate
ligand
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020170068180A
Other languages
English (en)
Korean (ko)
Other versions
KR20170138046A (ko
Inventor
마사히토 키타무라
히로시 아시하라
Original Assignee
가부시키가이샤 코쿠사이 엘렉트릭
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 코쿠사이 엘렉트릭 filed Critical 가부시키가이샤 코쿠사이 엘렉트릭
Publication of KR20170138046A publication Critical patent/KR20170138046A/ko
Application granted granted Critical
Publication of KR101922593B1 publication Critical patent/KR101922593B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H01L29/66795—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/80—After-treatment
    • H01L21/0228—
    • H01L21/0257—
    • H01L21/324—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0241—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] doping of vertical sidewalls, e.g. using tilted or multi-angled implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020170068180A 2016-06-06 2017-06-01 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 Active KR101922593B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016112732A JP6630237B2 (ja) 2016-06-06 2016-06-06 半導体装置の製造方法、基板処理装置及びプログラム
JPJP-P-2016-112732 2016-06-06

Publications (2)

Publication Number Publication Date
KR20170138046A KR20170138046A (ko) 2017-12-14
KR101922593B1 true KR101922593B1 (ko) 2018-11-27

Family

ID=60483946

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170068180A Active KR101922593B1 (ko) 2016-06-06 2017-06-01 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램

Country Status (3)

Country Link
US (1) US10388762B2 (enExample)
JP (1) JP6630237B2 (enExample)
KR (1) KR101922593B1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112567497A (zh) * 2018-08-11 2021-03-26 应用材料公司 掺杂技术

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040005788A1 (en) * 2002-07-03 2004-01-08 Fernando Gonzalez Method of forming a silicon nitride dielectric layer

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3115393A (en) * 1961-04-25 1963-12-24 Gen Electric Process for boron production
US5183777A (en) 1987-12-30 1993-02-02 Fujitsu Limited Method of forming shallow junctions
JPH02132823A (ja) * 1987-12-30 1990-05-22 Fujitsu Ltd 浅い接合を形成する方法及びその浅い接合を有する半導体装置
JPH0457319A (ja) * 1990-06-27 1992-02-25 Toshiba Corp 単結晶薄膜の形成方法
JPH08330246A (ja) 1995-05-31 1996-12-13 Toshiba Corp 多結晶シリコン膜の成膜方法
US6555451B1 (en) * 2001-09-28 2003-04-29 The United States Of America As Represented By The Secretary Of The Navy Method for making shallow diffusion junctions in semiconductors using elemental doping
US7232631B2 (en) 2003-05-08 2007-06-19 Dai Nippon Prinitng Co., Ltd. Mask for charged particle beam exposure, and method of forming the same
US7604830B2 (en) 2004-06-24 2009-10-20 Cook Incorporated Method and apparatus for coating interior surfaces of medical devices
JP5384852B2 (ja) 2008-05-09 2014-01-08 株式会社日立国際電気 半導体装置の製造方法及び半導体製造装置
US8012859B1 (en) * 2010-03-31 2011-09-06 Tokyo Electron Limited Atomic layer deposition of silicon and silicon-containing films
US8580664B2 (en) 2011-03-31 2013-11-12 Tokyo Electron Limited Method for forming ultra-shallow boron doping regions by solid phase diffusion
WO2012135599A1 (en) 2011-03-31 2012-10-04 Tokyo Electron Limited Method for forming ultra-shallow doping regions by solid phase diffusion
JP5815443B2 (ja) * 2012-03-19 2015-11-17 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP2014192485A (ja) 2013-03-28 2014-10-06 Hitachi Kokusai Electric Inc 半導体装置の製造方法、基板処理方法及び基板処理装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040005788A1 (en) * 2002-07-03 2004-01-08 Fernando Gonzalez Method of forming a silicon nitride dielectric layer

Also Published As

Publication number Publication date
US20170352745A1 (en) 2017-12-07
KR20170138046A (ko) 2017-12-14
JP6630237B2 (ja) 2020-01-15
JP2017220526A (ja) 2017-12-14
US10388762B2 (en) 2019-08-20

Similar Documents

Publication Publication Date Title
JP5518499B2 (ja) 半導体デバイスの製造方法および基板処理装置
JP5495847B2 (ja) 半導体装置の製造方法、基板処理装置および基板処理方法
JP5393895B2 (ja) 半導体装置の製造方法及び基板処理装置
US12469713B2 (en) Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US10640869B2 (en) Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
CN112838003B (zh) 半导体器件的制造方法、衬底处理装置及记录介质
CN112740364B (zh) 半导体装置的制造方法、基板处理装置和记录介质
JP2012186275A (ja) 基板処理装置及び半導体装置の製造方法
CN115989338A (zh) 半导体装置的制造方法、记录介质以及基板处理装置
US10714336B2 (en) Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium
US11898247B2 (en) Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
KR101922593B1 (ko) 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램
JP7678071B2 (ja) 基板処理装置、半導体装置の製造方法、およびプログラム
JP7539480B2 (ja) 基板処理方法、プログラム、基板処理装置及び半導体装置の製造方法
CN116134173B (zh) 基板处理方法、半导体装置的制造方法、基板处理装置及记录介质
WO2023037452A1 (ja) 半導体装置の製造方法、基板処理方法、基板処理装置および記録媒体
CN116601742A (zh) 半导体装置的制造方法、程序以及基板处理装置
US20260068567A1 (en) Processing method, method of manufacturing semiconductor device, processing apparatus, and recording medium
JP2025152740A (ja) 基板処理方法、半導体装置の製造方法、基板処理装置及びプログラム
CN117727623A (zh) 基板处理方法、半导体装置的制造方法、存储介质以及基板处理装置

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000