JP6630237B2 - 半導体装置の製造方法、基板処理装置及びプログラム - Google Patents

半導体装置の製造方法、基板処理装置及びプログラム Download PDF

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JP6630237B2
JP6630237B2 JP2016112732A JP2016112732A JP6630237B2 JP 6630237 B2 JP6630237 B2 JP 6630237B2 JP 2016112732 A JP2016112732 A JP 2016112732A JP 2016112732 A JP2016112732 A JP 2016112732A JP 6630237 B2 JP6630237 B2 JP 6630237B2
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dopant
film
gas
substrate
ligand
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Japanese (ja)
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JP2017220526A (ja
JP2017220526A5 (enExample
Inventor
匡史 北村
匡史 北村
芦原　洋司
洋司 芦原
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Kokusai Electric Corp
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Kokusai Electric Corp
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Priority to JP2016112732A priority Critical patent/JP6630237B2/ja
Priority to KR1020170068180A priority patent/KR101922593B1/ko
Priority to US15/613,807 priority patent/US10388762B2/en
Publication of JP2017220526A publication Critical patent/JP2017220526A/ja
Publication of JP2017220526A5 publication Critical patent/JP2017220526A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/80—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0241—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] doping of vertical sidewalls, e.g. using tilted or multi-angled implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2016112732A 2016-06-06 2016-06-06 半導体装置の製造方法、基板処理装置及びプログラム Active JP6630237B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016112732A JP6630237B2 (ja) 2016-06-06 2016-06-06 半導体装置の製造方法、基板処理装置及びプログラム
KR1020170068180A KR101922593B1 (ko) 2016-06-06 2017-06-01 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램
US15/613,807 US10388762B2 (en) 2016-06-06 2017-06-05 Method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016112732A JP6630237B2 (ja) 2016-06-06 2016-06-06 半導体装置の製造方法、基板処理装置及びプログラム

Publications (3)

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JP2017220526A JP2017220526A (ja) 2017-12-14
JP2017220526A5 JP2017220526A5 (enExample) 2018-10-18
JP6630237B2 true JP6630237B2 (ja) 2020-01-15

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Country Link
US (1) US10388762B2 (enExample)
JP (1) JP6630237B2 (enExample)
KR (1) KR101922593B1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020036820A1 (en) * 2018-08-11 2020-02-20 Applied Materials, Inc. Doping techniques

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3115393A (en) * 1961-04-25 1963-12-24 Gen Electric Process for boron production
JPH02132823A (ja) * 1987-12-30 1990-05-22 Fujitsu Ltd 浅い接合を形成する方法及びその浅い接合を有する半導体装置
US5183777A (en) 1987-12-30 1993-02-02 Fujitsu Limited Method of forming shallow junctions
JPH0457319A (ja) * 1990-06-27 1992-02-25 Toshiba Corp 単結晶薄膜の形成方法
JPH08330246A (ja) 1995-05-31 1996-12-13 Toshiba Corp 多結晶シリコン膜の成膜方法
US6555451B1 (en) * 2001-09-28 2003-04-29 The United States Of America As Represented By The Secretary Of The Navy Method for making shallow diffusion junctions in semiconductors using elemental doping
US6664198B1 (en) * 2002-07-03 2003-12-16 Micron Technology, Inc. Method of forming a silicon nitride dielectric layer
US7232631B2 (en) 2003-05-08 2007-06-19 Dai Nippon Prinitng Co., Ltd. Mask for charged particle beam exposure, and method of forming the same
US7604830B2 (en) 2004-06-24 2009-10-20 Cook Incorporated Method and apparatus for coating interior surfaces of medical devices
JP5384852B2 (ja) 2008-05-09 2014-01-08 株式会社日立国際電気 半導体装置の製造方法及び半導体製造装置
US8012859B1 (en) * 2010-03-31 2011-09-06 Tokyo Electron Limited Atomic layer deposition of silicon and silicon-containing films
KR20140023960A (ko) 2011-03-31 2014-02-27 도쿄엘렉트론가부시키가이샤 고상 확산에 의해 극히 얕은 도핑 영역을 형성하기 위한 방법
US8580664B2 (en) 2011-03-31 2013-11-12 Tokyo Electron Limited Method for forming ultra-shallow boron doping regions by solid phase diffusion
JP5815443B2 (ja) * 2012-03-19 2015-11-17 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP2014192485A (ja) 2013-03-28 2014-10-06 Hitachi Kokusai Electric Inc 半導体装置の製造方法、基板処理方法及び基板処理装置

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US20170352745A1 (en) 2017-12-07
KR20170138046A (ko) 2017-12-14
US10388762B2 (en) 2019-08-20
KR101922593B1 (ko) 2018-11-27
JP2017220526A (ja) 2017-12-14

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