JP2014220468A5 - - Google Patents
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- Publication number
- JP2014220468A5 JP2014220468A5 JP2013100582A JP2013100582A JP2014220468A5 JP 2014220468 A5 JP2014220468 A5 JP 2014220468A5 JP 2013100582 A JP2013100582 A JP 2013100582A JP 2013100582 A JP2013100582 A JP 2013100582A JP 2014220468 A5 JP2014220468 A5 JP 2014220468A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- supplying
- processing chamber
- borazine
- ring skeleton
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000758 substrate Substances 0.000 claims 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 8
- 229910052796 boron Inorganic materials 0.000 claims 8
- 239000007789 gas Substances 0.000 claims 8
- BGECDVWSWDRFSP-UHFFFAOYSA-N borazine Chemical group B1NBNBN1 BGECDVWSWDRFSP-UHFFFAOYSA-N 0.000 claims 7
- -1 borazine compound Chemical class 0.000 claims 7
- 239000012495 reaction gas Substances 0.000 claims 6
- 229910052736 halogen Inorganic materials 0.000 claims 4
- 150000002367 halogens Chemical class 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 239000010409 thin film Substances 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- 230000000717 retained effect Effects 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013100582A JP6159143B2 (ja) | 2013-05-10 | 2013-05-10 | 半導体装置の製造方法、基板処理装置およびプログラム |
| KR1020140054539A KR101573378B1 (ko) | 2013-05-10 | 2014-05-08 | 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체 |
| US14/274,411 US9412584B2 (en) | 2013-05-10 | 2014-05-09 | Method of manufacturing a thin film having a high tolerance to etching and non-transitory computer-readable recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013100582A JP6159143B2 (ja) | 2013-05-10 | 2013-05-10 | 半導体装置の製造方法、基板処理装置およびプログラム |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014220468A JP2014220468A (ja) | 2014-11-20 |
| JP2014220468A5 true JP2014220468A5 (enExample) | 2016-06-16 |
| JP6159143B2 JP6159143B2 (ja) | 2017-07-05 |
Family
ID=51865084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013100582A Active JP6159143B2 (ja) | 2013-05-10 | 2013-05-10 | 半導体装置の製造方法、基板処理装置およびプログラム |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9412584B2 (enExample) |
| JP (1) | JP6159143B2 (enExample) |
| KR (1) | KR101573378B1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9543140B2 (en) | 2013-10-16 | 2017-01-10 | Asm Ip Holding B.V. | Deposition of boron and carbon containing materials |
| US9401273B2 (en) | 2013-12-11 | 2016-07-26 | Asm Ip Holding B.V. | Atomic layer deposition of silicon carbon nitride based materials |
| WO2016103317A1 (ja) * | 2014-12-22 | 2016-06-30 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置および記録媒体 |
| JP2017084894A (ja) * | 2015-10-26 | 2017-05-18 | 東京エレクトロン株式会社 | ボロン窒化膜の形成方法および半導体装置の製造方法 |
| JP6602332B2 (ja) * | 2017-03-28 | 2019-11-06 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
| US11056353B2 (en) | 2017-06-01 | 2021-07-06 | Asm Ip Holding B.V. | Method and structure for wet etch utilizing etch protection layer comprising boron and carbon |
| CN112514051A (zh) * | 2018-07-27 | 2021-03-16 | 应用材料公司 | 3d nand蚀刻 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3605634B2 (ja) * | 1999-12-27 | 2004-12-22 | 独立行政法人物質・材料研究機構 | 立方晶窒化ホウ素の気相合成法 |
| US6383465B1 (en) * | 1999-12-27 | 2002-05-07 | National Institute For Research In Inorganic Materials | Cubic boron nitride and its gas phase synthesis method |
| JP2005167114A (ja) * | 2003-12-05 | 2005-06-23 | Mitsubishi Heavy Ind Ltd | 窒化ホウ素膜の成膜方法及び成膜装置 |
| CN100554506C (zh) | 2005-03-09 | 2009-10-28 | 东京毅力科创株式会社 | 半导体处理用的成膜方法及装置 |
| JP2007324536A (ja) * | 2006-06-05 | 2007-12-13 | Renesas Technology Corp | 層間絶縁膜およびその製造方法、ならびに半導体装置 |
| US8084105B2 (en) * | 2007-05-23 | 2011-12-27 | Applied Materials, Inc. | Method of depositing boron nitride and boron nitride-derived materials |
| JP5022116B2 (ja) * | 2007-06-18 | 2012-09-12 | 三菱重工業株式会社 | 半導体装置の製造方法及び製造装置 |
| JP2009102234A (ja) * | 2007-10-20 | 2009-05-14 | Nippon Shokubai Co Ltd | 放熱材料形成用化合物 |
| US8148269B2 (en) * | 2008-04-04 | 2012-04-03 | Applied Materials, Inc. | Boron nitride and boron-nitride derived materials deposition method |
| US20090286402A1 (en) * | 2008-05-13 | 2009-11-19 | Applied Materials, Inc | Method for critical dimension shrink using conformal pecvd films |
| US9469790B2 (en) * | 2009-09-29 | 2016-10-18 | The Boeing Company | Adhesive compositions comprising electrically insulating-coated carbon-based particles and methods for their use and preparation |
| JP5260586B2 (ja) * | 2010-03-12 | 2013-08-14 | 三菱重工業株式会社 | 半導体装置用絶縁膜の製造方法、半導体装置の製造方法 |
| US8357608B2 (en) * | 2010-08-09 | 2013-01-22 | International Business Machines Corporation | Multi component dielectric layer |
| JP2012084598A (ja) * | 2010-10-07 | 2012-04-26 | Tokyo Electron Ltd | 成膜装置、成膜方法及び記憶媒体 |
| JP6019640B2 (ja) * | 2011-03-23 | 2016-11-02 | 富士通株式会社 | 電子デバイス及びその製造方法 |
| JP6111106B2 (ja) * | 2013-03-19 | 2017-04-05 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
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2013
- 2013-05-10 JP JP2013100582A patent/JP6159143B2/ja active Active
-
2014
- 2014-05-08 KR KR1020140054539A patent/KR101573378B1/ko active Active
- 2014-05-09 US US14/274,411 patent/US9412584B2/en active Active