JP6159143B2 - 半導体装置の製造方法、基板処理装置およびプログラム - Google Patents

半導体装置の製造方法、基板処理装置およびプログラム Download PDF

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Publication number
JP6159143B2
JP6159143B2 JP2013100582A JP2013100582A JP6159143B2 JP 6159143 B2 JP6159143 B2 JP 6159143B2 JP 2013100582 A JP2013100582 A JP 2013100582A JP 2013100582 A JP2013100582 A JP 2013100582A JP 6159143 B2 JP6159143 B2 JP 6159143B2
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Japan
Prior art keywords
gas
layer
supplying
borazine
processing chamber
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JP2013100582A
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English (en)
Japanese (ja)
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JP2014220468A5 (enExample
JP2014220468A (ja
Inventor
敦 佐野
敦 佐野
義朗 ▲ひろせ▼
義朗 ▲ひろせ▼
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Kokusai Denki Electric Inc
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Hitachi Kokusai Electric Inc
Kokusai Denki Electric Inc
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Application filed by Hitachi Kokusai Electric Inc, Kokusai Denki Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to JP2013100582A priority Critical patent/JP6159143B2/ja
Priority to KR1020140054539A priority patent/KR101573378B1/ko
Priority to US14/274,411 priority patent/US9412584B2/en
Publication of JP2014220468A publication Critical patent/JP2014220468A/ja
Publication of JP2014220468A5 publication Critical patent/JP2014220468A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/342—Boron nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/36—Carbonitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/45542—Plasma being used non-continuously during the ALD reactions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2013100582A 2013-05-10 2013-05-10 半導体装置の製造方法、基板処理装置およびプログラム Active JP6159143B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013100582A JP6159143B2 (ja) 2013-05-10 2013-05-10 半導体装置の製造方法、基板処理装置およびプログラム
KR1020140054539A KR101573378B1 (ko) 2013-05-10 2014-05-08 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체
US14/274,411 US9412584B2 (en) 2013-05-10 2014-05-09 Method of manufacturing a thin film having a high tolerance to etching and non-transitory computer-readable recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013100582A JP6159143B2 (ja) 2013-05-10 2013-05-10 半導体装置の製造方法、基板処理装置およびプログラム

Publications (3)

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JP2014220468A JP2014220468A (ja) 2014-11-20
JP2014220468A5 JP2014220468A5 (enExample) 2016-06-16
JP6159143B2 true JP6159143B2 (ja) 2017-07-05

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US (1) US9412584B2 (enExample)
JP (1) JP6159143B2 (enExample)
KR (1) KR101573378B1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9543140B2 (en) 2013-10-16 2017-01-10 Asm Ip Holding B.V. Deposition of boron and carbon containing materials
US9401273B2 (en) 2013-12-11 2016-07-26 Asm Ip Holding B.V. Atomic layer deposition of silicon carbon nitride based materials
WO2016103317A1 (ja) * 2014-12-22 2016-06-30 株式会社日立国際電気 半導体装置の製造方法、基板処理装置および記録媒体
JP2017084894A (ja) * 2015-10-26 2017-05-18 東京エレクトロン株式会社 ボロン窒化膜の形成方法および半導体装置の製造方法
JP6602332B2 (ja) * 2017-03-28 2019-11-06 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
US11056353B2 (en) 2017-06-01 2021-07-06 Asm Ip Holding B.V. Method and structure for wet etch utilizing etch protection layer comprising boron and carbon
CN112514051A (zh) * 2018-07-27 2021-03-16 应用材料公司 3d nand蚀刻

Family Cites Families (16)

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JP3605634B2 (ja) * 1999-12-27 2004-12-22 独立行政法人物質・材料研究機構 立方晶窒化ホウ素の気相合成法
US6383465B1 (en) * 1999-12-27 2002-05-07 National Institute For Research In Inorganic Materials Cubic boron nitride and its gas phase synthesis method
JP2005167114A (ja) * 2003-12-05 2005-06-23 Mitsubishi Heavy Ind Ltd 窒化ホウ素膜の成膜方法及び成膜装置
CN100554506C (zh) 2005-03-09 2009-10-28 东京毅力科创株式会社 半导体处理用的成膜方法及装置
JP2007324536A (ja) * 2006-06-05 2007-12-13 Renesas Technology Corp 層間絶縁膜およびその製造方法、ならびに半導体装置
US8084105B2 (en) * 2007-05-23 2011-12-27 Applied Materials, Inc. Method of depositing boron nitride and boron nitride-derived materials
JP5022116B2 (ja) * 2007-06-18 2012-09-12 三菱重工業株式会社 半導体装置の製造方法及び製造装置
JP2009102234A (ja) * 2007-10-20 2009-05-14 Nippon Shokubai Co Ltd 放熱材料形成用化合物
US8148269B2 (en) * 2008-04-04 2012-04-03 Applied Materials, Inc. Boron nitride and boron-nitride derived materials deposition method
US20090286402A1 (en) * 2008-05-13 2009-11-19 Applied Materials, Inc Method for critical dimension shrink using conformal pecvd films
US9469790B2 (en) * 2009-09-29 2016-10-18 The Boeing Company Adhesive compositions comprising electrically insulating-coated carbon-based particles and methods for their use and preparation
JP5260586B2 (ja) * 2010-03-12 2013-08-14 三菱重工業株式会社 半導体装置用絶縁膜の製造方法、半導体装置の製造方法
US8357608B2 (en) * 2010-08-09 2013-01-22 International Business Machines Corporation Multi component dielectric layer
JP2012084598A (ja) * 2010-10-07 2012-04-26 Tokyo Electron Ltd 成膜装置、成膜方法及び記憶媒体
JP6019640B2 (ja) * 2011-03-23 2016-11-02 富士通株式会社 電子デバイス及びその製造方法
JP6111106B2 (ja) * 2013-03-19 2017-04-05 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

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KR101573378B1 (ko) 2015-12-01
KR20140133460A (ko) 2014-11-19
US9412584B2 (en) 2016-08-09
US20140335701A1 (en) 2014-11-13
JP2014220468A (ja) 2014-11-20

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