JP2017204607A - ウェーハの加工方法 - Google Patents
ウェーハの加工方法 Download PDFInfo
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- JP2017204607A JP2017204607A JP2016096972A JP2016096972A JP2017204607A JP 2017204607 A JP2017204607 A JP 2017204607A JP 2016096972 A JP2016096972 A JP 2016096972A JP 2016096972 A JP2016096972 A JP 2016096972A JP 2017204607 A JP2017204607 A JP 2017204607A
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- 238000003672 processing method Methods 0.000 title abstract description 11
- 230000001678 irradiating effect Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 230000001681 protective effect Effects 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 abstract description 9
- 238000003754 machining Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
Abstract
Description
13 保持テーブル
20 割り出し送り手段
21 加工送り手段
40 加工ヘッド(レーザービーム照射手段)
51 制御手段
C 角
D デバイス
DC デバイスチップ
L1 第1のストリート
L2 第2のストリート
R 改質層
T 保護テープ
W ウェーハ
W1 表面
W2 裏面
Claims (1)
- ウェーハ表面に一方の方向に形成された複数の第1のストリートと、該第1のストリートと直交する方向に形成された複数の第2のストリートとにより区画された複数のデバイスを備えたウェーハを保持する保持テーブルと、該保持テーブルに保持されたウェーハにレーザービームを照射するレーザービーム照射手段と、該保持テーブル及び該レーザービーム照射手段を相対的にX軸方向に加工送りする加工送り手段と、該保持テーブル及び該レーザービーム照射手段を相対的に該ストリートの間隔に対応してY軸方向に割り出し送りする割り出し送り手段と、各構成要素を制御する制御手段と、を備えるレーザー加工装置で該第1のストリート及び該第2のストリートに沿ってデバイスチップに分割するウェーハの加工方法であって、
表面側に保護テープが貼着されたウェーハを保持テーブルに保持する保持ステップと、
該保持ステップを実施した後に、ウェーハに対して透過性を有する波長のレーザービームをウェーハの裏面からウェーハの内部に位置づけて該第1のストリート及び該第2のストリートに沿って照射してウェーハの内部に改質層を形成する改質層形成ステップと、
該改質層形成ステップを実施した後に、該ウェーハの裏面から研削手段により研削し仕上げ厚みへと薄化するとともに研削動作により前記改質層を起点としてウェーハを該第1のストリート及び該第2のストリートに沿って分割する分割ステップと、を備え、
該改質層形成ステップにおいては、隣接するデバイスチップの角同士が分割時に対角線上で擦れないように、少なくとも該第1のストリートをX軸方向に位置付けてレーザービームを照射する際、隣接するデバイス毎に該第1のストリート内でY軸方向に所定間隔ずらして改質層を形成すること、を特徴とするウェーハの加工方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016096972A JP6636384B2 (ja) | 2016-05-13 | 2016-05-13 | ウェーハの加工方法 |
TW106112629A TWI721152B (zh) | 2016-05-13 | 2017-04-14 | 晶圓的加工方法 |
KR1020170057359A KR102226645B1 (ko) | 2016-05-13 | 2017-05-08 | 웨이퍼의 가공 방법 |
CN201710325604.7A CN107452678B (zh) | 2016-05-13 | 2017-05-10 | 晶片的加工方法 |
Applications Claiming Priority (1)
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---|---|---|---|
JP2016096972A JP6636384B2 (ja) | 2016-05-13 | 2016-05-13 | ウェーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017204607A true JP2017204607A (ja) | 2017-11-16 |
JP6636384B2 JP6636384B2 (ja) | 2020-01-29 |
Family
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JP2016096972A Active JP6636384B2 (ja) | 2016-05-13 | 2016-05-13 | ウェーハの加工方法 |
Country Status (4)
Country | Link |
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JP (1) | JP6636384B2 (ja) |
KR (1) | KR102226645B1 (ja) |
CN (1) | CN107452678B (ja) |
TW (1) | TWI721152B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6745165B2 (ja) * | 2016-08-09 | 2020-08-26 | 株式会社ディスコ | ウェーハの加工方法 |
US20190363017A1 (en) * | 2018-05-24 | 2019-11-28 | Semiconductor Components Industries, Llc | Die sawing singulation systems and methods |
JP7120904B2 (ja) * | 2018-10-30 | 2022-08-17 | 浜松ホトニクス株式会社 | レーザ加工装置及びレーザ加工方法 |
US11897056B2 (en) | 2018-10-30 | 2024-02-13 | Hamamatsu Photonics K.K. | Laser processing device and laser processing method |
CN112775539A (zh) * | 2019-11-07 | 2021-05-11 | 大族激光科技产业集团股份有限公司 | 激光加工方法及装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06275714A (ja) * | 1993-03-22 | 1994-09-30 | Mitsubishi Electric Corp | 半導体レーザ装置素子基板、及び半導体レーザ装置の製造方法 |
JP2004186340A (ja) * | 2002-12-02 | 2004-07-02 | Sumitomo Electric Ind Ltd | 化合物半導体ウエハの劈開方法 |
JP2006043713A (ja) * | 2004-07-30 | 2006-02-16 | Hamamatsu Photonics Kk | レーザ加工方法 |
JP2010123797A (ja) * | 2008-11-20 | 2010-06-03 | Disco Abrasive Syst Ltd | ウエーハのレーザー加工方法 |
JP2015201585A (ja) * | 2014-04-10 | 2015-11-12 | 株式会社ディスコ | ウェーハの加工方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003072090A (ja) * | 2001-09-06 | 2003-03-12 | Ricoh Co Ltd | 液滴吐出ヘッド及びその製造方法、マイクロデバイス、インクカートリッジ並びにインクジェット記録装置 |
CN100485902C (zh) | 2002-03-12 | 2009-05-06 | 浜松光子学株式会社 | 基板的分割方法 |
JP5090897B2 (ja) | 2007-12-28 | 2012-12-05 | 株式会社ディスコ | ウェーハの分割方法 |
JP2011108708A (ja) | 2009-11-13 | 2011-06-02 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2013089714A (ja) * | 2011-10-17 | 2013-05-13 | Disco Abrasive Syst Ltd | チップ形成方法 |
JP6053381B2 (ja) | 2012-08-06 | 2016-12-27 | 株式会社ディスコ | ウェーハの分割方法 |
JP5598801B2 (ja) | 2012-12-18 | 2014-10-01 | 株式会社レーザーシステム | レーザーダイシング方法、チップの製造方法およびレーザー加工装置 |
JP6045361B2 (ja) | 2013-01-17 | 2016-12-14 | 株式会社ディスコ | ウエーハの加工方法 |
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2016
- 2016-05-13 JP JP2016096972A patent/JP6636384B2/ja active Active
-
2017
- 2017-04-14 TW TW106112629A patent/TWI721152B/zh active
- 2017-05-08 KR KR1020170057359A patent/KR102226645B1/ko active IP Right Grant
- 2017-05-10 CN CN201710325604.7A patent/CN107452678B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06275714A (ja) * | 1993-03-22 | 1994-09-30 | Mitsubishi Electric Corp | 半導体レーザ装置素子基板、及び半導体レーザ装置の製造方法 |
JP2004186340A (ja) * | 2002-12-02 | 2004-07-02 | Sumitomo Electric Ind Ltd | 化合物半導体ウエハの劈開方法 |
JP2006043713A (ja) * | 2004-07-30 | 2006-02-16 | Hamamatsu Photonics Kk | レーザ加工方法 |
JP2010123797A (ja) * | 2008-11-20 | 2010-06-03 | Disco Abrasive Syst Ltd | ウエーハのレーザー加工方法 |
JP2015201585A (ja) * | 2014-04-10 | 2015-11-12 | 株式会社ディスコ | ウェーハの加工方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI721152B (zh) | 2021-03-11 |
TW201806011A (zh) | 2018-02-16 |
JP6636384B2 (ja) | 2020-01-29 |
KR20170128104A (ko) | 2017-11-22 |
CN107452678A (zh) | 2017-12-08 |
CN107452678B (zh) | 2021-07-09 |
KR102226645B1 (ko) | 2021-03-10 |
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