JP2017204463A - 異方性導電フィルム - Google Patents
異方性導電フィルム Download PDFInfo
- Publication number
- JP2017204463A JP2017204463A JP2017085744A JP2017085744A JP2017204463A JP 2017204463 A JP2017204463 A JP 2017204463A JP 2017085744 A JP2017085744 A JP 2017085744A JP 2017085744 A JP2017085744 A JP 2017085744A JP 2017204463 A JP2017204463 A JP 2017204463A
- Authority
- JP
- Japan
- Prior art keywords
- conductive particles
- conductive film
- anisotropic conductive
- repeating unit
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
- B32B27/20—Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/16—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by features of a layer formed of particles, e.g. chips, powder or granules
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/10—Adhesives in the form of films or foils without carriers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
- H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2260/00—Layered product comprising an impregnated, embedded, or bonded layer wherein the layer comprises an impregnation, embedding, or binder material
- B32B2260/02—Composition of the impregnated, bonded or embedded layer
- B32B2260/025—Particulate layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2260/00—Layered product comprising an impregnated, embedded, or bonded layer wherein the layer comprises an impregnation, embedding, or binder material
- B32B2260/04—Impregnation, embedding, or binder material
- B32B2260/046—Synthetic resin
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/001—Conductive additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/304—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being heat-activatable, i.e. not tacky at temperatures inferior to 30°C
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/314—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive layer and/or the carrier being conductive
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
- C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
- H01L2224/2731—Manufacturing methods by local deposition of the material of the layer connector in liquid form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
- H01L2224/2743—Manufacturing methods by blanket deposition of the material of the layer connector in solid form
- H01L2224/27436—Lamination of a preform, e.g. foil, sheet or layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29075—Plural core members
- H01L2224/2908—Plural core members being stacked
- H01L2224/29082—Two-layer arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29344—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29355—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/29364—Palladium [Pd] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29455—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29499—Shape or distribution of the fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/819—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector with the bump connector not providing any mechanical bonding
- H01L2224/81901—Pressing the bump connector against the bonding areas by means of another connector
- H01L2224/81903—Pressing the bump connector against the bonding areas by means of another connector by means of a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00012—Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electrical Connectors (AREA)
Abstract
【解決手段】
絶縁性樹脂バインダ3に導電粒子2が配置された異方性導電フィルム1Aであって、導電粒子2が間隔をあけて一列に並んだ導電粒子列2p、2q、2rであって導電粒子数の異なるものが並列してなる導電粒子の繰り返しユニット5が異方性導電フィルムの全面にわたり繰り返し配置されている。
【選択図】図1A
Description
導電粒子が間隔をあけて一列に並んだ導電粒子列であって導電粒子数の異なるものが並列してなる導電粒子の繰り返しユニットが繰り返し配置されている異方性導電フィルムを提供する。
図1Aは、本発明の一実施例の異方性導電フィルム1Aの導電粒子の配置を示す平面図であり、図1Bはその断面図である。
この異方性導電フィルム1Aは、導電粒子2が絶縁性樹脂バインダ3の表面又はその近傍に単層で配置され、その上に絶縁性接着層4が積層した構造を有している。
導電粒子2としては、公知の異方性導電フィルムにおいて使用されているものを適宜選択して使用することができる。例えば、ニッケル、銅、銀、金、パラジウムなどの金属粒子、ポリアミド、ポリベンゾグアナミン等の樹脂粒子の表面をニッケルなどの金属で被覆した金属被覆樹脂粒子等を挙げることができる。配置される導電粒子の大きさは、好ましくは1〜30μm、より好ましくは1μm以上10μm以下、さらに好ましくは2μm以上6μm以下である。
(繰り返しユニット)
異方性導電フィルム1Aの平面視における導電粒子2の配置は、導電粒子列2p、2q、2rと単独の導電粒子2sが並置された繰り返しユニット5が異方性導電フィルム1Aの全面に縦横(X方向、Y方向)に繰り返されたものとなっており、繰り返しユニット5の外形をなす導電粒子の中心を順次結んで形成される多角形は3角形となっている。なお、本発明の異方性導電フィルムは、必要に応じて導電粒子が配置されていない領域をもつことができる。
図1Aに示した異方性導電フィルム1Aにおける繰り返しユニット5の繰り返しは、より詳細には、X方向には、繰り返しユニット5が、繰り返しユニット5内における粒子間隔をあけて繰り返されている。また、Y方向には、繰り返しユニット5をY方向の対称軸で反転させた繰り返しユニット5Bと繰り返しユニット5とが間隔をあけて交互に繰り返されている。この場合、繰り返しユニットの外形をなす導電粒子の中心を順次結んで形成される多角形を、異方性導電フィルムの短手方向に投影したときの異方性導電フィルムの長手方向の辺における位置が、該繰り返しユニットに隣接する繰り返しユニットの同様の位置が部分的に重畳することが好ましい。一般に、電子部品の端子の幅方向が異方性導電フィルムの長手方向となるので、上述のように繰り返しユニットの外形をなす多角形を重畳させると、電子部品の端子で導電粒子が捕捉される確率が高まるためである。また、異方性導電フィルムの長手方向と短手方向を入れ替えてもよい。端子レイアウトによっては、入れ替えた方が良い場合も発生するためである。
繰り返しユニット5の異方性導電フィルムの大きさや繰り返しユニット間の距離は、該異方性導電フィルム1Aで接続する電子部品のバンプ幅やバンプ間スペースの大きさによって定めることが好ましい。
本発明において、繰り返しユニット5における導電粒子2の配置や、繰り返しユニット5の縦横の繰り返しピッチは、異方性導電接続の接続対象とする端子の形状や端子のピッチに応じて適宜変更することができる。したがって、導電粒子2を単純な格子状の配列とする場合に比して、異方性導電フィルム全体としては少ない導電粒子数で高い捕捉性を達成することができる。
上述した異方性導電フィルムのうち、例えば図1Aに示した異方性導電フィルム1Aでは繰り返しユニット5の外形をなす導電粒子の中心を順次結んで形成される3角形5xの各辺は異方性導電フィルム1Aの長手方向又は短手方向と斜交している。これにより、導電粒子2aの、異方性導電フィルムの長手方向の外接線L1が、該導電粒子2aと異方性導電フィルムの長手方向で隣接する導電粒子2bを貫く。また、導電粒子2aの、異方性導電フィルムの短手方向の外接線L2が、該導電粒子2aと異方性導電フィルムの短手方向で隣接する導電粒子2cを貫く。一般に、異方性導電接続時には、異方性導電フィルムの長手方向がバンプの短手方向となるので、繰り返しユニット5の多角形5xの辺が異方性導電フィルム1Aの長手方向又は短手方向と斜交していると、バンプの縁に沿って複数の導電粒子が直線状に並ぶことを防止でき、これにより直線状に並んだ複数の導電粒子がまとまって端子から外れて導通に寄与しなくなるという現象を回避できるので、導電粒子2の捕捉性を向上させることができる。
導電粒子の最近接粒子間距離は、繰り返しユニット5内で隣接する導電粒子間においても、繰り返しユニット5間で隣接する導電粒子間においても、平均導電粒子径の0.5倍以上が好ましい。繰り返しユニット5間の距離は繰り返しユニット5内で隣接する導電粒子間距離よりも長いことが好ましい。この距離が短すぎると導電粒子相互の接触によりショートが起こりやすくなる。隣接する導電粒子の距離の上限は、バンプ形状やバンプピッチに応じて定める。例えば、バンプ幅200μm、バンプ間スペース200μmの場合に、バンプ幅又はバンプ間スペースのいずれかに導電粒子を最低1個存在させるとき、導電粒子間距離は400μm未満とする。導電粒子の捕捉性を確実にする点からは、200μm未満とすることが好ましい。
導電粒子の個数密度は、異方性導電フィルムの製造コストを抑制する点、及び異方性導電接続時に使用する押圧治具に必要とされる推力が過度に大きくならないようにする点から、導電粒子の平均粒子径が10μm未満の場合、50000個/mm2以下が好ましく、35000個/mm2以下がより好ましく、30000個/mm2以下がさらに好ましい。一方、導電粒子の個数密度は、少なすぎると端子で導電粒子が十分に捕捉されないことによる導通不良が懸念されることから、300個/mm2以上が好ましく、500個/mm2以上がより好ましく、800個/mm2以上がさらに好ましい。
なお、導電粒子の個数密度は、局所的(一例として、200μm×200μm)には、上述の個数密度を外れていても良い。
絶縁性樹脂バインダ3としては、公知の異方性導電フィルムにおいて絶縁性樹脂バインダとして使用されている熱重合性組成物、光重合性組成物、光熱併用重合性組成物等を適宜選択して使用することができる。このうち熱重合性組成物としては、アクリレート化合物と熱ラジカル重合開始剤とを含む熱ラジカル重合性樹脂組成物、エポキシ化合物と熱カチオン重合開始剤とを含む熱カチオン重合性樹脂組成物、エポキシ化合物と熱アニオン重合開始剤とを含む熱アニオン重合性樹脂組成物等をあげることができ、光重合性組成物としては、アクリレート化合物と光ラジカル重合開始剤とを含む光ラジカル重合性樹脂組成物等をあげることができる。特に問題が生じないのであれば、複数種の重合性組成物を併用してもよい。併用例としては、熱カチオン重合性組成物と熱ラジカル重合性組成物の併用などが挙げられる。
絶縁性樹脂バインダ3の最低溶融粘度は異方性導電フィルムの製造方法等に応じて適宜定めることができる。例えば、異方性導電フィルムの製造方法として、導電粒子を絶縁性樹脂バインダの表面に所定の配置で保持させ、その導電粒子を絶縁性樹脂バインダに押し込む方法を行うとき、絶縁性樹脂バインダがフィルム成形を可能とする点から樹脂の最低溶融粘度を1100Pa・s以上とすることが好ましい。また、後述するように、図12又は図13に示すように絶縁性樹脂バインダ3に押し込んだ導電粒子2の露出部分の周りに凹み3bを形成したり、図14に示すように絶縁性樹脂バインダ3に押し込んだ導電粒子2の直上に凹み3cを形成したりする点から、最低溶融粘度は、好ましくは1500Pa・s以上、より好ましくは2000Pa・s以上、さらに好ましくは3000〜15000Pa・s、特に3000〜10000Pa・sである。この最低溶融粘度は、一例として回転式レオメータ(TA instrument社製)を用い、昇温速度が10℃/分、測定圧力が5gで一定に保持し、直径8mmの測定プレートを使用して求めることができる。また、好ましくは40〜80℃、より好ましくは50〜60℃で絶縁性樹脂バインダ3に導電粒子2を押し込む工程を行う場合に、上述と同様に凹み3b又は3cの形成の点から、60℃における粘度は、下限は好ましくは3000Pa・s以上、より好ましくは4000Pa・s以上、さらに好ましくは4500Pa・s以上であり、上限は、好ましくは20000Pa・s以下、より好ましくは15000Pa・s以下、更に好ましくは10000Pa・s以下である。
絶縁性樹脂バインダ3の厚みLaは、好ましくは1μm以上60μm以下、より好ましくは1μm以上30μm以下、さらに好ましくは2μm以上15μm以下である。また、絶縁性樹脂バインダ3の厚みLaは、導電粒子2の平均粒子径Dとの関係では、それらの比(La/D)が0.6〜10が好ましい。絶縁性樹脂バインダ3の厚みLaが大き過ぎると異方性導電接続時に導電粒子が位置ズレしやすくなり、端子における導電粒子の捕捉性が低下する。この傾向はLa/Dが10を超えると顕著である。そこでLa/Dは8以下がより好ましく、6以下が更により好ましい。反対に絶縁性樹脂バインダ3の厚みLaが小さすぎてLa/Dが0.6未満となると、導電粒子を絶縁性樹脂バインダ3によって所定の粒子分散状態あるいは所定の配列に維持することが困難となる。特に、接続する端子が高密度COGの場合、絶縁性樹脂バインダ3の層厚Laと導電粒子2の粒子径Dとの比(La/D)は、好ましくは0.8〜2である。
絶縁性樹脂バインダ3における導電粒子2の埋込状態については特に制限がないが、異方性導電フィルムを対向する部品の間で挟持し、加熱加圧することにより異方性導電接続を行う場合、図12、図13に示すように、導電粒子2を絶縁性樹脂バインダ3から部分的に露出させ、隣接する導電粒子2間の中央部における絶縁性樹脂バインダの表面3aの接平面3Pに対して導電粒子2の露出部分の周りに凹み3bが形成されているか、又は図14に示すように、絶縁性樹脂バインダ3内に押し込まれた導電粒子2の直上の絶縁性樹脂バインダ部分に、前記と同様の接平面3Pに対して凹み3cが形成され、導電粒子2の直上の絶縁性樹脂バインダ3の表面にうねりが存在するようにすることが好ましい。導電粒子2が対向する電子部品の電極間で挟持されて加熱加圧される際に生じる導電粒子2の偏平化に対し、図12、図13に示した凹み3bがあることより、導電粒子2が絶縁性樹脂バインダ3から受ける抵抗が、凹み3bが無い場合に比して低減する。このため、対向する電極間において導電粒子2が挟持され易くなり、導通性能も向上する。また、絶縁性樹脂バインダ3を構成する樹脂のうち、導電粒子2の直上の樹脂の表面に凹み3c(図14)が形成されていることにより、凹み3cが無い場合に比して加熱加圧時の圧力が導電粒子2に集中し易くなり、電極において導電粒子2が挟持され易くなり、導通性能が向上する。
上述の凹み3bの効果を得やすくする点から、隣接する導電粒子2間の中央部における絶縁性樹脂バインダの表面3aの接平面3pからの導電粒子2の最深部の距離(以下、埋込量という)Lbと、導電粒子2の平均粒子径Dとの比(Lb/D)(以下、埋込率という)は60%以上105%以下であることが好ましい。
本発明の異方性導電フィルムでは、導電粒子2を配置させている絶縁性樹脂バインダ3上に、絶縁性樹脂バインダ3を構成する樹脂と粘度や粘着性が異なる絶縁性接着層4が積層されていてもよい。
異方性導電フィルムの製造方法としては、例えば、導電粒子を所定の配列に配置するための転写型を製造し、転写型の凹部に導電粒子を充填し、その上に、剥離フィルム上に形成した絶縁性樹脂バインダ3を被せ圧力をかけ、絶縁性樹脂バインダ3に導電粒子2を押し込むことにより、絶縁性樹脂バインダ3に導電粒子2を転着させる。あるいはさらにその導電粒子2上に絶縁性接着層4を積層する。こうして、異方性導電フィルム1Aを得ることができる。
異方性導電フィルムは、電子部品の接続に連続的に供するため、リールに巻かれたフィルム巻装体とすることが好ましい。フィルム巻装体の長さは、5m以上であればよく、10m以上であることが好ましい。上限は特にないが、出荷物の取り扱い性の点から、5000m以下であることが好ましく、1000m以下であることがより好ましく、500m以下であることがさらに好ましい。
本発明の異方性導電フィルムは、FPC、ICチップ、ICモジュールなどの第1電子部品と、FPC、リジッド基板、セラミック基板、ガラス基板、プラスチック基板などの第2電子部品とを熱又は光により異方性導電接続する際に好ましく適用することができる。また、ICチップやICモジュールをスタックして第1電子部品同士を異方性導電接続することもできる。このようにして得られる接続構造体及びその製造方法も本発明の一部である。
(異方性導電フィルムの作製)
COG接続に使用する異方性導電フィルムについて、絶縁性樹脂バインダの樹脂組成と導電粒子の配置がフィルム形成能と導通特性に及ぼす影響を次のようにして調べた。
各実験例の異方性導電フィルムに対し、次のようにして(a)初期導通抵抗と(b)導通信頼性を測定した。結果を表2に示す。
各実験例の異方性導電フィルムを、ステージ上のガラス基板と押圧ツール側の導通特性評価用ICとの間に挟み、押圧ツールで加熱加圧(180℃、5秒)して各評価用接続物を得た。この場合、押圧ツールによる推力を低(40MPa)、中(60MPa)、高(80MPa)の3段階に変えて3通りの評価用接続物を得た。
外形 1.8×20.0mm
厚み 0.5mm
バンプ仕様 サイズ30×85μm、バンプ間距離50μm、バンプ高さ15μm
ガラス材質 コーニング社製1737F
外形 30×50mm
厚み 0.5mm
電極 ITO配線
初期導通抵抗の評価基準(実用上、2Ω未満であれば問題はない)
A:0.4Ω未満
B:0.4Ω以上0.8Ω未満
C:0.8Ω以上
(a)で作製した評価用接続物を、温度85℃、湿度85%RHの恒温槽に500時間おく信頼性試験を行い、その後の導通抵抗を、初期導通抵抗と同様に測定し、次の3段階の評価基準で評価した。
A:1.2Ω未満
B:1.2Ω以上2Ω未満
C:2Ω以上
実験例1〜3と5〜8の異方性導電フィルムを使用し、次のショート率の評価用ICを使用して180℃、60MPa、5秒の接続条件で評価用接続物を得、得られた評価用接続物のショート数を計測し、評価用ICの端子数に対する計測したショート数の割合としてショート率を求めた。
外形 15×13mm
厚み0.5mm
バンプ仕様 サイズ25×140μm、バンプ間距離7.5μm、バンプ高さ15μm
(異方性導電フィルムの作製)
FOG接続に使用する異方性導電フィルムについて、絶縁性樹脂バインダの樹脂組成と導電粒子の配置がフィルム形成能と導通特性に及ぼす影響を次のようにして調べた。
各実験例の異方性導電フィルムに対し、次のようにして(a)初期導通抵抗と(b)導通信頼性を測定した。結果を表4に示す。
各実験例で得た異方性導電フィルムを2mm×40mmで裁断し、導通特性の評価用FPCとガラス基板との間に挟み、ツール幅2mmで加熱加圧(180℃、5秒)して各評価用接続物を得た。この場合、押圧ツールによる推力を低(3MPa)、中(4.5MPa)、高(6MPa)の3段階に変えて3通りの評価用接続物を得た。得られた評価用接続物の導通抵抗を実験例1と同様に測定し、その測定値を次の基準で3段階に評価した。
端子ピッチ 20μm
端子幅/端子間スペース 8.5μm/11.5μm
ポリイミドフィルム厚(PI)/銅箔厚(Cu)=38/8、Sn plating
電極 ITO配線
厚み 0.7mm
A:1.6Ω未満
B:1.6Ω以上2.0Ω未満
C:2.0Ω以上
(a)で作製した評価用接続物を、温度85℃、湿度85%RHの恒温槽に500時間き、その後の導通抵抗を初期導通抵抗と同様に測定し、その測定値を次の基準で3段階に評価した。
A:3.0Ω未満
B:3.0Ω以上4Ω未満
C:4.0Ω以上
初期導通抵抗を測定した評価用接続物のショート数を計測し、計測されたショート数と評価用接続物のギャップ数からショート発生率を求めた。ショート発生率は100ppm未満であれば実用上問題はない。
実験例9〜11と13〜16のいずれもショート発生率は100ppm未満であった。
2、2a、2b、2c、2s 導電粒子
2m、2n、2o、2p、2q、2r 導電粒子列
2t 導電粒子の頂部
3 絶縁性樹脂バインダ
3a 絶縁性樹脂バインダの表面
3b、3c 凹み
3P 接平面
4 絶縁性接着層
5、5B 繰り返しユニット
5a 異方性導電フィルムの長手方向と平行な辺
5b 異方性導電フィルムの短手方向と平行な辺
5x 繰り返しユニットの外形をなす導電粒子の中心を順次結んで形成される多角形
D 平均粒子径
L1、L2 外接線
La 絶縁性樹脂バインダの厚み
Lb 導電粒子の埋込量
Lc 導電粒子の露出部分の径
Ld 凹みの最大径
Le、Lf 最大深さ
Claims (12)
- 絶縁性樹脂バインダに導電粒子が配置された異方性導電フィルムであって、
導電粒子が間隔をあけて一列に並んだ導電粒子列であって導電粒子数の異なるものが並列してなる導電粒子の繰り返しユニットが繰り返し配置されている異方性導電フィルム。 - 繰り返しユニットが異方性導電フィルムの全面にわたって配置されている請求項1記載の異方性導電フィルム。
- 繰り返しユニットにおいて並列している導電粒子列を構成する導電粒子数が漸次異なる請求項1又は2記載の異方性導電フィルム。
- 繰り返しユニットにおいて並列している3列の導電粒子列において、中央の導電粒子列を構成する導電粒子数が両側の導電粒子列を構成する導電粒子数より多いか少ない請求項1又は2記載の異方性導電フィルム。
- 繰り返しユニットの外形をなす導電粒子の中心を順次結んで形成される多角形の各辺が異方性導電フィルムの長手方向又は短手方向と斜交している請求項1〜4のいずれかに記載の異方性導電フィルム。
- 繰り返しユニットの外形をなす導電粒子の中心を順次結んで形成される多角形が異方性導電フィルムの長手方向又は短手方向と平行な辺を有する請求項1〜4のいずれかに記載の異方性導電フィルム。
- 繰り返しユニットにおいて、導電粒子列同士が平行である請求項1〜6のいずれかに記載の異方性導電フィルム。
- 繰り返しユニットと共に単独の導電粒子が繰り返し配置されている請求項1〜7のいずれかに記載の異方性導電フィルム。
- 繰り返しユニット内において、隣接する導電粒子同士の最近接距離が導電粒子の平均粒子径の0.5倍以上である請求項1〜8のいずれかに記載の異方性導電フィルム。
- 繰り返しユニットを構成する導電粒子が、6方格子又は正方格子の各格子点に導電粒子が存在する配置から、所定の格子点の導電粒子を規則的に抜いた配置である請求項1〜9のいずれかに記載の異方性導電フィルム。
- 請求項1〜10のいずれかに記載の異方性導電フィルムにより第1電子部品と第2電子部品が異方性導電接続されている接続構造体。
- 第1電子部品と第2電子部品を異方性導電フィルムを介して熱圧着することにより第1電子部品と第2電子部品の接続構造体を製造する方法であって、異方性導電フィルムとして、請求項1〜10のいずれかに記載の異方性導電フィルムを使用する接続構造体の製造方法。
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110776384.6A CN113707361B (zh) | 2016-05-05 | 2017-04-25 | 各向异性导电膜 |
KR1020187021398A KR102243340B1 (ko) | 2016-05-05 | 2017-04-25 | 이방성 도전 필름 |
KR1020217011350A KR20210046827A (ko) | 2016-05-05 | 2017-04-25 | 이방성 도전 필름 |
CN201780025115.8A CN109074894B (zh) | 2016-05-05 | 2017-04-25 | 各向异性导电膜 |
PCT/JP2017/016345 WO2017191781A1 (ja) | 2016-05-05 | 2017-04-25 | 異方性導電フィルム |
US16/085,515 US11794444B2 (en) | 2016-05-05 | 2017-04-25 | Anisotropic conductive film |
TW110140383A TWI823170B (zh) | 2016-05-05 | 2017-05-01 | 異向性導電膜之製造方法、異向性導電膜之設計方法、異向性導電膜、連接結構體、及連接結構體之製造方法 |
TW106114401A TWI747898B (zh) | 2016-05-05 | 2017-05-01 | 異向性導電膜 |
JP2022021048A JP2022069456A (ja) | 2016-05-05 | 2022-02-15 | 異方性導電フィルム |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016092903 | 2016-05-05 | ||
JP2016092903 | 2016-05-05 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022021048A Division JP2022069456A (ja) | 2016-05-05 | 2022-02-15 | 異方性導電フィルム |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017204463A true JP2017204463A (ja) | 2017-11-16 |
JP7274811B2 JP7274811B2 (ja) | 2023-05-17 |
Family
ID=60322404
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017085744A Active JP7274811B2 (ja) | 2016-05-05 | 2017-04-24 | 異方性導電フィルム |
Country Status (4)
Country | Link |
---|---|
US (1) | US11794444B2 (ja) |
JP (1) | JP7274811B2 (ja) |
KR (2) | KR102243340B1 (ja) |
CN (1) | CN109074894B (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019235560A1 (ja) * | 2018-06-06 | 2019-12-12 | デクセリアルズ株式会社 | フィラー含有フィルム |
JP2019214714A (ja) * | 2018-06-06 | 2019-12-19 | デクセリアルズ株式会社 | フィラー含有フィルム |
KR20210009383A (ko) | 2018-08-08 | 2021-01-26 | 데쿠세리아루즈 가부시키가이샤 | 이방성 도전 필름 |
KR20220116052A (ko) | 2020-02-12 | 2022-08-19 | 데쿠세리아루즈 가부시키가이샤 | 이방성 도전 필름 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017191772A1 (ja) * | 2016-05-05 | 2017-11-09 | デクセリアルズ株式会社 | フィラー配置フィルム |
JP7095227B2 (ja) * | 2016-05-05 | 2022-07-05 | デクセリアルズ株式会社 | 異方性導電フィルム |
KR102621211B1 (ko) * | 2016-05-05 | 2024-01-04 | 데쿠세리아루즈 가부시키가이샤 | 이방성 도전 필름 |
JP7274810B2 (ja) * | 2016-05-05 | 2023-05-17 | デクセリアルズ株式会社 | 異方性導電フィルム |
US20170338204A1 (en) * | 2016-05-17 | 2017-11-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device and Method for UBM/RDL Routing |
KR102519126B1 (ko) * | 2018-03-30 | 2023-04-06 | 삼성디스플레이 주식회사 | 표시 장치 |
KR102608245B1 (ko) * | 2019-01-21 | 2023-11-29 | 삼성전자주식회사 | 전기 전도성 복합막, 그 제조 방법, 이를 포함하는 이차전지와 전자기기 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007080522A (ja) * | 2005-09-09 | 2007-03-29 | Sumitomo Bakelite Co Ltd | 異方導電性フィルムおよび電子・電機機器 |
JP2009076431A (ja) * | 2007-01-31 | 2009-04-09 | Tokai Rubber Ind Ltd | 異方性導電膜およびその製造方法 |
JP2016015205A (ja) * | 2014-06-30 | 2016-01-28 | デクセリアルズ株式会社 | 異方導電性フィルム及び接続構造体 |
JP2016066573A (ja) * | 2013-11-19 | 2016-04-28 | デクセリアルズ株式会社 | 異方導電性フィルム及び接続構造体 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4209481A (en) | 1976-04-19 | 1980-06-24 | Toray Industries, Inc. | Process for producing an anisotropically electroconductive sheet |
JPS6032282B2 (ja) | 1976-09-09 | 1985-07-27 | 東レ株式会社 | 異方導電性シ−トおよびその製造方法 |
JPH0461398A (ja) | 1990-06-29 | 1992-02-27 | Mitsubishi Kasei Corp | 層間回路接続方法 |
JPH09320345A (ja) * | 1996-05-31 | 1997-12-12 | Whitaker Corp:The | 異方導電性フィルム |
US20010008169A1 (en) | 1998-06-30 | 2001-07-19 | 3M Innovative Properties Company | Fine pitch anisotropic conductive adhesive |
WO2007015710A2 (en) * | 2004-11-09 | 2007-02-08 | Board Of Regents, The University Of Texas System | The fabrication and application of nanofiber ribbons and sheets and twisted and non-twisted nanofiber yarns |
US8247701B2 (en) * | 2006-04-27 | 2012-08-21 | Asahi Kasei Emd Corporation | Electroconductive particle placement sheet and anisotropic electroconductive film |
JP2007019550A (ja) | 2006-10-06 | 2007-01-25 | Seiko Epson Corp | 電子デバイスの製造方法 |
JP2010019672A (ja) | 2008-07-10 | 2010-01-28 | Sumitomo Electric Ind Ltd | 基板体 |
JP2010251337A (ja) | 2010-08-05 | 2010-11-04 | Sony Chemical & Information Device Corp | 異方性導電膜及びその製造方法並びに接続構造体 |
JP5757801B2 (ja) * | 2011-06-29 | 2015-08-05 | 根泰 許 | バーナー |
JP6169914B2 (ja) | 2012-08-01 | 2017-07-26 | デクセリアルズ株式会社 | 異方性導電フィルムの製造方法、異方性導電フィルム、及び接続構造体 |
US10412837B2 (en) | 2012-08-29 | 2019-09-10 | Dexerials Corporation | Anisotropic conductive film and method of producing the same |
JP2015032500A (ja) | 2013-08-05 | 2015-02-16 | 株式会社クラレ | 異方性導電体膜とその製造方法、デバイス、電子放出素子、フィールドエミッションランプ、及びフィールドエミッションディスプレイ |
JP2015079586A (ja) | 2013-10-15 | 2015-04-23 | デクセリアルズ株式会社 | 異方性導電フィルム |
WO2015151874A1 (ja) | 2014-03-31 | 2015-10-08 | デクセリアルズ株式会社 | 異方性導電フィルム及びその製造方法 |
JP2015232660A (ja) | 2014-06-10 | 2015-12-24 | 株式会社Joled | 表示装置の製造方法及び表示装置 |
JP6661969B2 (ja) | 2014-10-28 | 2020-03-11 | デクセリアルズ株式会社 | 異方性導電フィルム及び接続構造体 |
JP2017175093A (ja) * | 2016-03-25 | 2017-09-28 | デクセリアルズ株式会社 | 電子部品、接続体、電子部品の設計方法 |
-
2017
- 2017-04-24 JP JP2017085744A patent/JP7274811B2/ja active Active
- 2017-04-25 KR KR1020187021398A patent/KR102243340B1/ko active IP Right Grant
- 2017-04-25 CN CN201780025115.8A patent/CN109074894B/zh active Active
- 2017-04-25 US US16/085,515 patent/US11794444B2/en active Active
- 2017-04-25 KR KR1020217011350A patent/KR20210046827A/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007080522A (ja) * | 2005-09-09 | 2007-03-29 | Sumitomo Bakelite Co Ltd | 異方導電性フィルムおよび電子・電機機器 |
JP2009076431A (ja) * | 2007-01-31 | 2009-04-09 | Tokai Rubber Ind Ltd | 異方性導電膜およびその製造方法 |
JP2016066573A (ja) * | 2013-11-19 | 2016-04-28 | デクセリアルズ株式会社 | 異方導電性フィルム及び接続構造体 |
JP2016015205A (ja) * | 2014-06-30 | 2016-01-28 | デクセリアルズ株式会社 | 異方導電性フィルム及び接続構造体 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019235560A1 (ja) * | 2018-06-06 | 2019-12-12 | デクセリアルズ株式会社 | フィラー含有フィルム |
JP2019214714A (ja) * | 2018-06-06 | 2019-12-19 | デクセリアルズ株式会社 | フィラー含有フィルム |
CN112292430A (zh) * | 2018-06-06 | 2021-01-29 | 迪睿合株式会社 | 含有填料的膜 |
KR20210009383A (ko) | 2018-08-08 | 2021-01-26 | 데쿠세리아루즈 가부시키가이샤 | 이방성 도전 필름 |
US11694988B2 (en) | 2018-08-08 | 2023-07-04 | Dexerials Corporation | Anisotropic conductive film |
KR20220116052A (ko) | 2020-02-12 | 2022-08-19 | 데쿠세리아루즈 가부시키가이샤 | 이방성 도전 필름 |
Also Published As
Publication number | Publication date |
---|---|
US20190035763A1 (en) | 2019-01-31 |
CN109074894A (zh) | 2018-12-21 |
US11794444B2 (en) | 2023-10-24 |
CN109074894B (zh) | 2021-07-30 |
KR20210046827A (ko) | 2021-04-28 |
KR20180098607A (ko) | 2018-09-04 |
JP7274811B2 (ja) | 2023-05-17 |
KR102243340B1 (ko) | 2021-04-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2017204463A (ja) | 異方性導電フィルム | |
TWI781119B (zh) | 含填料膜 | |
JP6187665B1 (ja) | 異方性導電フィルム | |
KR102228112B1 (ko) | 이방성 도전 필름 | |
JP7401798B2 (ja) | 異方性導電フィルム | |
KR102308962B1 (ko) | 이방성 도전 필름 | |
JP2018093194A (ja) | 接続構造体 | |
JP2022069456A (ja) | 異方性導電フィルム | |
JP7332956B2 (ja) | フィラー含有フィルム | |
JP2022126655A (ja) | フィラー含有フィルム | |
WO2017191776A1 (ja) | 異方性導電フィルムの製造方法、及び異方性導電フィルム | |
KR20210033513A (ko) | 이방성 도전 필름, 접속 구조체, 접속 구조체의 제조 방법 | |
KR102621211B1 (ko) | 이방성 도전 필름 | |
WO2020121787A1 (ja) | 異方性導電フィルム、接続構造体、接続構造体の製造方法 | |
JP2023117329A (ja) | 導電フィルムの設計方法 | |
JP2017201624A (ja) | 異方性導電フィルムの製造方法、及び異方性導電フィルム |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170515 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20170515 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200421 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210309 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20210430 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210708 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20211116 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220216 |
|
C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20220216 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20220224 |
|
C21 | Notice of transfer of a case for reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C21 Effective date: 20220301 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20220415 |
|
C211 | Notice of termination of reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C211 Effective date: 20220419 |
|
C22 | Notice of designation (change) of administrative judge |
Free format text: JAPANESE INTERMEDIATE CODE: C22 Effective date: 20220621 |
|
C22 | Notice of designation (change) of administrative judge |
Free format text: JAPANESE INTERMEDIATE CODE: C22 Effective date: 20220712 |
|
C13 | Notice of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: C13 Effective date: 20230104 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230306 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230315 |
|
C23 | Notice of termination of proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C23 Effective date: 20230328 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230502 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7274811 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |