TWI747898B - 異向性導電膜 - Google Patents

異向性導電膜 Download PDF

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Publication number
TWI747898B
TWI747898B TW106114401A TW106114401A TWI747898B TW I747898 B TWI747898 B TW I747898B TW 106114401 A TW106114401 A TW 106114401A TW 106114401 A TW106114401 A TW 106114401A TW I747898 B TWI747898 B TW I747898B
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Taiwan
Prior art keywords
conductive particles
anisotropic conductive
conductive film
repeating unit
film
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TW106114401A
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English (en)
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TW201812798A (zh
Inventor
尾怜司
阿久津恭志
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日商迪睿合股份有限公司
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Priority claimed from JP2017085744A external-priority patent/JP7274811B2/ja
Application filed by 日商迪睿合股份有限公司 filed Critical 日商迪睿合股份有限公司
Publication of TW201812798A publication Critical patent/TW201812798A/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
    • B32B5/16—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by features of a layer formed of particles, e.g. chips, powder or granules
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • B32B27/20—Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
    • C—CHEMISTRY; METALLURGY
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/10—Adhesives in the form of films or foils without carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
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    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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    • C09J2301/00—Additional features of adhesives in the form of films or foils
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    • C09J2301/304—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being heat-activatable, i.e. not tacky at temperatures inferior to 30°C
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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    • C09J2301/314—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive layer and/or the carrier being conductive
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Abstract

提供一種能夠應對窄間距之凸塊，且能夠降低導電粒子之個數密度的異向性導電膜。於異向性導電膜1A中，以如下方式於絕緣性樹脂黏合劑3中配置有導電粒子2。即，於異向性導電膜之整個面重複配置有導電粒子之重複單元5，該導電粒子之重複單元5係導電粒子2隔開間隔排列為一列而成之導電粒子列2p、2q、2r且為導電粒子數不同者並列而成。

Description

異向性導電膜
本發明係關於一種異向性導電膜。
使導電粒子分散於絕緣性樹脂黏合劑中而成之異向性導電膜於將IC晶片等電子零件安裝於配線基板等時被廣泛使用。於異向性導電膜中，強烈要求藉由伴隨電子零件之高密度安裝的凸塊之窄間距化，而提高凸塊中之導電粒子的捕捉性，且避免相鄰之凸塊間之短路。
針對此種要求，提出有將異向性導電膜中的導電粒子之配置設為晶格狀之排列，且使其排列軸相對於異向性導電膜之長邊方向傾斜，並且於該情形時，使導電粒子間之距離以特定之比例隔開(專利文獻1、專利文獻2)。又，亦提出有藉由將導電粒子連結，而形成導電粒子局部較密之區域，從而應對窄間距化(專利文獻3)。
專利文獻1：日本專利4887700號公報
專利文獻2：日本專利特開平9-320345號公報
專利文獻3：日本專利特表2002-519473號公報
如專利文獻1、2記載，於將導電粒子配置為簡單之晶格狀之情形時，藉由排列軸之傾斜角或導電粒子間之距離應對凸塊之佈局。因此，若凸塊成為窄間距，則必須縮小導電粒子間之距離，而變得難以避免短路。又，導電粒子之個數密度增加，導致異向性導電膜之製造成本亦增加。
另一方面，於不縮小導電粒子間之距離之情形時，有無法藉由端子捕捉足夠個數之導電粒子之虞。
又，於藉由將導電粒子連結而形成導電粒子局部較密之區域之手法中，於連結之複數個導電粒子同時進入凸塊間空間時短路之風險變高，故而欠佳。
因此，本發明之課題在於提供一種能夠應對窄間距之凸塊，且與以往之異向性導電膜相比能夠降低導電粒子之個數密度的異向性導電膜。
本發明者發現，若將導電粒子互相隔開間隔並且形成特定排列之導電粒子的單元重複配置於異向性導電膜之整個面，則可於膜整個面形成導電粒子之疏密區域，因此於疏密區域之密區域中可連接窄間距之凸塊，且於該密區域中導電粒子亦互相隔開，因此短路之風險降低，進而，藉由疏區域之存在，可降低膜整體的導電粒子之個數密度，從而想到本發明。
即，本發明提供一種異向性導電膜，其於絕緣性樹脂黏合劑中配置有導電粒子，且其重複配置有導電粒子之重複單元，該導電粒子之重複單元係導電粒子隔開間隔排列為一列而成之導電粒子列且為導電粒子數不同者並列而成。
根據本發明之異向性導電膜，並非將各導電粒子設為簡單之晶格狀之排列，而是重複配置有特定之粒子配置之導電粒子的重複單元，故而可於膜形成導電粒子之疏密區域，因此可抑制異向性導電膜整體中導電粒子之個數密度之增加。因此，可抑制伴隨導電粒子之個數密度增加導致製造成本之增加。又，通常若導電粒子之個數密度增加，則於異向性導電連接時按壓夾具所需之推力亦增加，但根據本發明之異向性導電膜，藉由抑制導電粒子之個數密度之增加，而亦抑制於異向性導電連接時按壓夾具所需之推力之增加，因此可防止電子零件因異向性導電連接而變形。又，藉由按壓夾具無需過大之推力，按壓夾具之推力穩定，因此經異向性導電連接之電子零件之導通特性等品質穩定。
另一方面，根據本發明之異向性導電膜，由於沿縱橫方向重複形成成為導電粒子較密之區域的重複單元，因此可連接窄間距之凸塊。進而，於重複單元內，導電粒子互相隔開，因此即使於重複單元橫跨端子間空間之情形時，亦可避免短路之產生。
1A、1B、1C、1D、1E、1F、1G、1H、1I、1a、1b、1c、1d、1e‧‧‧異向性導電膜
2、2a、2b、2c、2s‧‧‧導電粒子
2m、2n、2o、2p、2q、2r‧‧‧導電粒子列
2t‧‧‧導電粒子之頂部
3‧‧‧絕緣性樹脂黏合劑
3a‧‧‧絕緣性樹脂黏合劑之表面
3b、3c‧‧‧凹部
3P‧‧‧切平面
4‧‧‧絕緣性接著層
5、5B‧‧‧重複單元
5a‧‧‧與異向性導電膜之長邊方向平行之邊
5b‧‧‧與異向性導電膜之短邊方向平行之邊
5x‧‧‧依序連結形成重複單元之外形的導電粒子之中心而形成之多角形
D‧‧‧平均粒徑
L1、L2‧‧‧外切線
La‧‧‧絕緣性樹脂黏合劑之厚度
Lb‧‧‧導電粒子之埋入量
Lc‧‧‧導電粒子之露出部分之徑
Ld‧‧‧凹部之最大徑
Le、Lf‧‧‧最大深度
圖1A係表示實施例之異向性導電膜1A的導電粒子之配置的俯視圖。
圖1B係實施例之異向性導電膜1A之剖面圖。
圖2係實施例之異向性導電膜1B之俯視圖。
圖3係實施例之異向性導電膜1C之俯視圖。
圖4係實施例之異向性導電膜1D之俯視圖。
圖5係實施例之異向性導電膜1E之俯視圖。
圖6係實施例之異向性導電膜1F之俯視圖。
圖7係實施例之異向性導電膜1G之俯視圖。
圖8係實施例之異向性導電膜1H之俯視圖。
圖9係實施例之異向性導電膜1I之俯視圖。
圖10係實施例之異向性導電膜1J之俯視圖。
圖11係實施例之異向性導電膜1K之俯視圖。
圖12係實施例之異向性導電膜1a之剖面圖。
圖13係實施例之異向性導電膜1b之剖面圖。
圖14係實施例之異向性導電膜1c之剖面圖。
圖15係實施例之異向性導電膜1d之剖面圖。
圖16係實施例之異向性導電膜1e之剖面圖。
以下，一邊參照圖式一邊對本發明之異向性導電膜進行詳細說明。再者，各圖中，相同之符號表示相同或同等之構成要素。
<異向性導電膜之整體構成>
圖1A係表示本發明之一實施例之異向性導電膜1A的導電粒子之配置的俯視圖，圖1B係其剖面圖。
該異向性導電膜1A具有如下結構：將導電粒子2以單層配置於絕緣性樹脂黏合劑3之表面或其附近，並於其上積層有絕緣性接著層4。
再者，作為本發明之異向性導電膜，亦可設為省略絕緣性接著層4，而將導電粒子2埋入至絕緣性樹脂黏合劑3之構成。
<導電粒子>
作為導電粒子2，可適當選擇公知之異向性導電膜中使用者而使用。例如可列舉：鎳、銅、銀、金、鈀等金屬粒子；以鎳等金屬被覆聚醯胺、聚苯胍
Figure 106114401-A0202-12-0005-23
(polybenzoguanamine)等樹脂粒子之表面而成之金屬被覆樹脂粒子等。配置之導電粒子的大小較佳為1~30μm，更佳為1μm以上且10μm以下，進而較佳為2μm以上且6μm以下。
導電粒子2之平均粒徑可藉由圖像型或雷射式粒度分佈計進行測量。亦可俯視觀察異向性導電膜，而測量粒徑並求出。於該情形時，較佳為測量200個以上，更佳為測量500個以上，進而更佳為測量1000個以上。
導電粒子2之表面較佳藉由絕緣塗佈或絕緣粒子處理等而被覆。此種被覆容易自導電粒子2之表面剝離，且不會阻礙異向性連接。又，亦可於導電粒子2之整個表面或一部分設置有突起。突起之高度為導電粒徑之20%以內，較佳為10%以內。
<導電粒子之配置>
(重複單元)
異向性導電膜1A之俯視下的導電粒子2之配置係將並列設置有導電粒子列2p、2q、2r及單獨之導電粒子2s的重複單元5於異向性導電膜1A之整個面沿縱橫方向(X方向、Y方向)重複，且依序連結形成重複單元5之外形的導電粒子之中心而形成之多角形成為三角形。再者，本發明之異向性導電膜可視需要具有未配置導電粒子之區域。
各導電粒子列2p、2q、2r於俯視下分別為導電粒子2隔開間隔而呈直線狀排列為一列。又，構成導電粒子列2p、2q、2r之導電粒子數逐漸不同，導電粒子列2p、2q、2r平行地並列。如上所述，藉由重複使粒子數逐漸不同之導電粒子列2p、2q、2r並列而成之粒子配置，導電粒子之個數密度局部形成疏密，因此於將異向性導電膜貼附於電子零件之情形時，即使存在微小之錯位，於構成凸塊列之任一凸塊中亦容易捕捉穩定個數之導電粒子。其於連續進行異向性導電連接之情形時更有效。即，於簡單之晶格排列者中異向性導電膜於電子零件上之貼附微小地錯開之情形時，尤其是於凸塊端部捕捉粒子數容易因錯位之有無或程度而變動。為了抑制該變動，考慮使晶格排列之角度相對於膜之長邊方向傾斜(專利文獻1等)。然而，若凸塊寬度或凸塊間距離變得更窄，則使晶格排列傾斜之效果有限。對此，於本發明中，藉由使凸塊長之範圍中產生導電粒子之個數密度的疏密，而使凸塊長之範圍之任一部位捕捉導電粒子。換言之，於一個凸塊中同時產生捕捉導電粒子之位置與不捕捉之位置。藉此，只要於任一凸塊排列中凸塊之形狀(面積)均相同，則藉由適當設定重複單元之重複間隔，由凸塊捕捉之導電粒子之個數變得穩定。因此，即使異向性導電膜 之貼附產生微小之錯位，又，生產線上連續製造連接體時之各連接體之凸塊排列中的導電粒子之捕捉狀態亦變得容易穩定。又，藉由一個凸塊同時產生捕捉導電粒子之位置與不捕捉之位置，而可期待異向性導電連接後之檢查勞力之減少及品質管理之提高。例如，藉由一個凸塊同時產生捕捉導電粒子之位置與不捕捉之位置，於異向性導電連接後之壓痕檢查時，連續獲得之連接體之對比變得容易。又，可於連續製造之連接體彼此間對於異向性導電連接步驟中將異向性導電膜暫貼於電子零件時之錯位之有無進行比較，因此可期待連接裝置之改善事項變得容易判定。
重複單元5中之導電粒子2之配置係構成該重複單元5之導電粒子2的一部分佔據無間隙地排列正六角形之情形時之各正六角形的頂點之一部分的配置。或為無間隙地排列正三角形之情形時之正三角形的頂點與構成重複單元5之導電粒子重疊之配置。進而換言之，自導電粒子存在於六方晶格排列之各晶格點之配置規則地除去特定晶格點的導電粒子之剩餘之配置成為重複單元5。如上所述，若於六方晶格排列之晶格點配置導電粒子2，則重複單元5之粒子配置容易識別，設計變得容易。再者，如下文所述，重複單元中之導電粒子之配置並不限於基於六方晶格者，亦可基於正方晶格，亦可基於沿縱橫方向排列八角形以上之正多角形且使鄰接之正多角形之邊彼此重合之配置。
(重複單元之重複態樣)
更詳細而言，圖1A所示之異向性導電膜1A中之重複單元5之重複於X方向上，重複單元5將重複單元5內之粒子間隔隔開而重複。又，於Y方向上，將使重複單元5沿Y方向之對稱軸反轉而成之重複單元5B與重複 單元5隔開間隔而交替重複。於該情形時，較佳將依序連結形成重複單元之外形的導電粒子之中心而形成之多角形沿異向性導電膜之短邊方向投影時之異向性導電膜之長邊方向之邊中的位置和與該重複單元鄰接之重複單元之同樣之位置局部重疊。其原因在於：通常由於電子零件之端子之寬度方向成為異向性導電膜之長邊方向，因此若以上述方式使形成重複單元之外形的多角形重疊，則由電子零件之端子捕捉導電粒子之機率提高。又，亦可交換異向性導電膜之長邊方向與短邊方向。其原因在於根據端子佈局而亦會產生交換為宜之情形。
再者，於考慮導電粒子2之重複單元之情形時，亦可將合併重複單元5與使其反轉而成之重複單元5B而成之單元視為導電粒子之重複單位，但於本發明中，重複單元較佳為複數個導電粒子列並列而成之單元且為沿縱橫方向重複之最小單位。
(重複單元之大小)
重複單元5之異向性導電膜之大小或重複單元間之距離較佳藉由利用該異向性導電膜1A連接之電子零件的凸塊寬度或凸塊間空間之大小而決定。
例如，於連接對象為非微間距之情形時，重複單元5之異向性導電膜長邊方向之大小較佳為小於凸塊寬度或凸塊間空間之任一較窄者之長度。即使設為此種大小，藉由將重複單元5重複配置，亦可使凸塊捕捉連接所需最低限度之導電粒子數，又，可減少不參與連接之導電粒子數，因此可謀求異向性導電膜之成本削減。又，藉由使形成重複單元5之外形的多角形之邊與異向性導電膜1A之短邊方向斜交，而可獲得與長尺寸之異 向性導電膜之切下位置無關而穩定之連接性能。
連接對象為非微間距之情形時之異向性導電膜長邊方向上的鄰接之重複單元5、5B之距離較佳較藉由該異向性導電膜連接之電子零件之凸塊間空間更短。
另一方面，於連接對象為微間距之情形時，較佳將異向性導電膜長邊方向之重複單元5、5B之大小設為橫跨凸塊間空間之大小。
再者，關於微間距與非微間距之邊界，作為一例，可將凸塊寬度未達30μm設為微間距，將30μm以上設為非微間距。
於以上述方式根據連接對象決定重複單元5之大小時，構成重複單元5之導電粒子數較佳設為5個以上，更佳為10個以上，進而較佳為20個以上。其原因在於：由於通常較佳於藉由異向性導電連接而連接之相對向之端子間捕捉3個以上、尤其是10個以上之導電粒子，因此於重複單元被夾持於相對向之端子間時，可根據一個重複單元之壓痕確認捕捉到此種數量之導電粒子。
(重複單元之具體變化態樣)
於本發明中，重複單元5中之導電粒子2之配置，或重複單元5之縱橫之重複間距可根據作為異向性導電連接之連接對象的端子之形狀或端子之間距而適當變更。因此，與將導電粒子2設為簡單的晶格狀之排列之情形相比，異向性導電膜整體可以較少之導電粒子數達成較高之捕捉性。
例如，除了圖1A所示之重複態樣以外，亦可如圖2所示之異向性導電膜1B般，將重複單元5以交錯排列狀重複。於交錯排列中，電子零件之異向性導電連接時的樹脂流動對導電粒子之影響於位於交錯排列 之中央部之凸塊及位於外側之凸塊不同，位於交錯排列之中央部之凸塊與位於外側之凸塊中短路風險亦不同，因此可適當變更重複單元5之形狀而調整樹脂流動之流向。
重複單元5中之導電粒子2之配置亦可根據作為異向性導電連接之連接對象的端子之形狀或端子之間距而適當變更。例如，可如圖3所示之異向性導電膜1C般，逐漸增加及減少一個重複單元5內構成導電粒子列2p之導電粒子數，亦可隨著重複單元5之重複而重複配置單獨之導電粒子2s。進而，於一個重複單元內並列之3列導電粒子列中，可使構成中央之導電粒子列的導電粒子數多於或少於構成兩側之導電粒子列的導電粒子數。例如，如圖4所示之異向性導電膜1D般，於各重複單元5中並列有沿異向性導電膜之長邊方向排列4個導電粒子2之導電粒子列2p、排列2個導電粒子2之導電粒子列2q、排列3個導電粒子2之導電粒子列2r及1個導電粒子2s。若增減於一個重複單元內並列之導電粒子列中的導電粒子之個數，則該重複單元之外形成為複雜之多角形狀，而變得容易應對放射狀之凸塊排列(所謂扇出凸塊)之連接。以構成該重複單元的導電粒子列之導電粒子數表示一個重複單元中之導電粒子之配置，例如，於將圖4所示之重複單元表示為[4-2-3-1]時，作為該重複單元之變化例，可列舉[4-1-4-1]、[4-3-1-2]、[3-2-2-1]、[4-1-2-3]、[4-2-1-3]等。亦可將該等組合而重複配置。例如可列舉[4-2-3-1-2-1-4-3]。
又，一個導電粒子列內之導電粒子間距離於一個重複單元內並列之導電粒子列彼此間可相同亦可不同。例如，可如圖5所示之異向性導電膜1E般，將重複單元5之外形設為菱形，並於其中央部配置導電粒子 2。於該重複單元中，由5個導電粒子構成之導電粒子列2m、由2個導電粒子構成之導電粒子列2n、由3個導電粒子構成之導電粒子列2o、由2個導電粒子構成之導電粒子列2p及由5個導電粒子構成之導電粒子列2q並列，導電粒子列2m、2q中之導電粒子間距離、導電粒子列2n、2p中之導電粒子間距離及導電粒子列2o中之導電粒子間距離互不相同。於將其設為上述之記法之[4-3-2-1]之情形時，亦可為除去3之中心之導電粒子而成之排列。其原因在於可進一步降低短路產生風險。
於上述異向性導電膜1A、1B、1C、1D、1E中，重複單元5、5B內之導電粒子2之配置係存在於六方晶格之晶格點，但只要導電粒子列2p並列，則亦可如圖6所示之異向性導電膜1F般設為基於正方晶格之排列。
圖7所示之異向性導電膜1G係將由2列導電粒子列2p、2q構成之重複單元5及使該重複單元5之導電粒子的排列軸旋轉60°而成之重複單元5B分別重複配置於膜整個面而成者。如上所述，亦可併用某重複單元與使其旋轉特定角度而成之重複單元。
作為重複單元之形狀，可將依序連結形成其外形之導電粒子形成之多角形設為正多角形。由此導電粒子之配置之識別變得容易，故而較佳。於該情形時，形成重複單元之各導電粒子亦可不存在於六方晶格或正方晶格之晶格點。例如，可如圖8所示之異向性導電膜1H般將重複單元5之外形形成為正八角形。於該情形時，形成重複單元之外形的導電粒子係如同圖中虛線所示般配置於使縱橫排列正八角形而鄰接之正八角形彼此之邊重合之晶格的該正八角形之頂點。亦可以同樣之方式將導電粒子配置於正12角形，或其以上之正多角形體之頂點。再者，亦可藉由將導電粒子配 置於六方晶格或正方晶格之晶格點而形成外形成為八角形以上之大致正多角形之重複單元。例如，圖9所示之異向性導電膜1I之重複單元5係由配置於正方晶格之晶格點上之導電粒子2形成，而成為異向性導電膜之長邊方向及短邊方向均對稱之八角形。藉此，可容易地識別導電粒子之配置。
又，重複單元中並列之導電粒子列彼此可未必平行，亦可以放射狀排列。例如，可如圖10所示之異向性導電膜1J般，沿縱橫方向重複配置具有以放射狀排列之導電粒子列2m、2n、2o、2p、2q之重複單元5。於該情形時，導電粒子2亦可不存在於六方晶格或正方晶格之晶格點。
(重複單元之邊之朝向)
上述異向性導電膜中，例如於圖1A所示之異向性導電膜1A中，依序連結形成重複單元5之外形的導電粒子之中心形成之三角形5x之各邊與異向性導電膜1A之長邊方向或短邊方向斜交。藉此，導電粒子2a之異向性導電膜之長邊方向的外切線L1貫穿導電粒子2b，該導電粒子2b於異向性導電膜之長邊方向與該導電粒子2a鄰接。又，導電粒子2a之異向性導電膜之短邊方向的外切線L2貫穿導電粒子2c，該導電粒子2c於異向性導電膜之短邊方向與該導電粒子2a鄰接。由於通常於異向性導電連接時，異向性導電膜之長邊方向成為凸塊之短邊方向，因此若重複單元5之多角形5x之邊與異向性導電膜1A之長邊方向或短邊方向斜交，則可防止複數個導電粒子沿凸塊之緣而排列成直線狀，藉此可避免排列成直線狀之複數個導電粒子一齊脫離端子而變得無助於導通之現象，故而可提高導電粒子2之捕捉性。
再者，於異向性導電連接時異向性導電膜之長邊方向成為凸 塊之短邊方向之情形時，由形成重複單元5之外形的導電粒子形成之多角形5x，可未必其全部邊與異向性導電膜之長邊方向或短邊方向斜交，就導電粒子之捕捉性之方面而言，較佳為2邊以上、更佳為3邊以上與異向性導電膜之長邊方向或短邊方向斜交為佳。
另一方面，於凸塊之排列圖案為放射狀之情形時(所謂扇出凸塊)，較佳形成重複單元之多角形具有異向性導電膜之長邊方向或短邊方向之邊。即，為了實現應連接之凸塊彼此即使設置有凸塊之基材熱膨脹亦不會錯位，而存在使凸塊之排列圖案成為放射狀之情形(例如，日本專利特開2007-19550號公報、2015-232660號公報等)，於該情形時，各凸塊之長邊方向與異向性導電膜之長邊方向形成之角度逐漸變化。因此，即使不使重複單元5之多角形之邊與異向性導電膜之長邊方向或短邊方向斜交，重複單元5、5B之多角形之邊亦與呈放射狀排列之各凸塊之長邊方向之邊緣斜交。因此，可避免於異向性導電連接時附於凸塊之緣的多數導電粒子不被該凸塊捕捉，導致導電粒子之捕捉性降低之現象。另一方面，凸塊之放射狀之排列圖案通常形成為左右對稱。因此，就藉由異向性導電連接後之壓痕使連接狀態之良好與否之確認變得容易之方面而言，較佳形成重複單元5之外形的多角形具有異向性導電膜之長邊方向或短邊方向之邊。因此，例如於將重複單元設為與圖1A所示之異向性導電膜1A同樣之三角形之情形時，較佳如圖11所示之異向性導電膜1K般，以形成重複單元5之外形的三角形之1邊5a與異向性導電膜之長邊方向或短邊方向平行之方式配置。又，亦可如圖8所示之異向性導電膜1H之重複單元5般，使其具有與異向性導電膜之長邊方向平行之邊5a及與短邊方向平行之邊5b。
再者，作為本發明中之導電粒子之配置，並不限定於圖示之重複單元之排列。例如，亦可為使圖示之排列傾斜而成者。於該情形時，亦包括使其傾斜90°而成者、即交換膜之長邊方向與短邊方向而成之態樣。又，亦可為變更重複單元5之間隔或重複單元內之導電粒子之間隔而成者。
<導電粒子之最接近粒子間距離>
導電粒子之最接近粒子間距離於重複單元5內鄰接之導電粒子間及重複單元5間鄰接之導電粒子間，均較佳為平均導電粒徑之0.5倍以上。重複單元5間之距離較佳長於重複單元5內鄰接之導電粒子間距離。若該距離過短，則變得容易因導電粒子之相互接觸而引起短路。鄰接之導電粒子的距離之上限根據凸塊形狀或凸塊間距而決定。例如，於凸塊寬度為200μm、凸塊間空間為200μm之情形時，於使導電粒子於凸塊寬度或凸塊間空間之任一者中存在最少1個時，導電粒子間距離設為未達400μm。就使導電粒子之捕捉性變得確實之方面而言，較佳設為未達200μm。
<導電粒子之個數密度>
導電粒子之個數密度就抑制異向性導電膜之製造成本之方面，及避免於異向性導電連接時使用之按壓夾具必需之推力過大之方面而言，於導電粒子之平均粒徑未達10μm之情形時，較佳為50000個/mm2以下，更佳為35000個/mm2以下，進而較佳為30000個/mm2以下。另一方面，若導電粒子之個數密度過少，則有因端子未充分捕捉導電粒子導致導通不良之虞，故而較佳為300個/mm2以上，更佳為500個/mm2以上，進而較佳為800個/mm2以上。
又，於導電粒子之平均粒徑為10μm以上之情形時，較佳 為15個/mm2以上，更佳為50個/mm2以上，進而更佳為160個/mm2以上。其原因在於，若導電粒徑變大，則導電粒子之佔有面積率亦提高。就同樣之理由而言，較佳為1800個/mm2以下，更佳為1100個/mm2以下，進而較佳為800個/mm2以下。再者，導電粒子之個數密度亦可局部(作為一例，200μm×200μm)性地偏離上述個數密度。
<絕緣性樹脂黏合劑>
作為絕緣性樹脂黏合劑3，可適當選擇公知之異向性導電膜中用作絕緣性樹脂黏合劑之熱聚合性組成物、光聚合性組成物、光熱併用聚合性組成物等而使用。其中，作為熱聚合性組成物，可列舉含有丙烯酸酯化合物與熱自由基聚合起始劑之熱自由基聚合性樹脂組成物、含有環氧化合物與熱陽離子聚合起始劑之熱陽離子聚合性樹脂組成物、含有環氧化合物與熱陰離子聚合起始劑之熱陰離子聚合性樹脂組成物等，作為光聚合性組成物，可列舉含有丙烯酸酯化合物與光自由基聚合起始劑之光自由基聚合性樹脂組成物等。只要不特別產生問題，則亦可併用多種聚合性組成物。作為併用例，可列舉熱陽離子聚合性組成物與熱自由基聚合性組成物之併用等。
此處，作為光聚合起始劑，亦可含有對波長不同之光進行反應之多種起始劑。藉此，可區分使用異向性導電膜之製造時構成絕緣性樹脂層的樹脂之光硬化與異向性連接時用以將電子零件彼此接著的樹脂之光硬化中使用之波長。
於使用光聚合性組成物形成絕緣性樹脂黏合劑3之情形時，藉由異向性導電膜之製造時之光硬化，可使絕緣性樹脂黏合劑3所含的光聚合性化合物之全部或一部分光硬化。藉由該光硬化，可保持或固定 絕緣性樹脂黏合劑3中的導電粒子2之配置，而期待短路之抑制與捕捉之提高。又，藉由調整該光硬化之條件，可調整異向性導電膜之製造步驟中之絕緣性樹脂層的黏度。
絕緣性樹脂黏合劑3中之光聚合性化合物之摻合量較佳為30質量%以下，更佳為10質量%以下，更佳為未達2質量%。其原因在於，若光聚合性化合物過多，則異向性導電連接時之壓入施加之推力會增加。
另一方面，熱聚合性組成物含有熱聚合性化合物與熱聚合起始劑，作為該熱聚合性化合物，可使用亦作為光聚合性化合物發揮功能者。又，於熱聚合性組成物中亦可除熱聚合性化合物以外另行含有光聚合性化合物，並且含有光聚合性起始劑。較佳除了熱聚合性化合物以外另行含有光聚合性化合物與光聚合起始劑。例如，使用熱陽離子系聚合起始劑作為熱聚合起始劑，使用環氧樹脂作為熱聚合性化合物，使用光自由基起始劑作為光聚合起始劑，使用丙烯酸酯化合物作為光聚合性化合物。亦可於絕緣性樹脂黏合劑3中含有該等聚合性組成物之硬化物。
作為用作熱或光聚合性化合物之丙烯酸酯化合物，可使用以往公知之熱聚合型(甲基)丙烯酸酯單體。例如，可使用單官能(甲基)丙烯酸酯系單體、二官能以上之多官能(甲基)丙烯酸酯系單體。
又，用作聚合性化合物之環氧化合物係形成三維網狀結構，且賦予良好之耐熱性、接著性者，較佳併用固體環氧樹脂與液狀環氧樹脂。此處，所謂固體環氧樹脂意指於常溫為固體之環氧樹脂。又，所謂液狀環氧樹脂意指於常溫為液狀之環氧樹脂。又，所謂常溫意指JIS Z 8703規定之5~35℃之溫度範圍。於本發明中可併用2種以上之環氧化合物。又，除了 環氧化合物以外，亦可併用氧環丁烷(oxetane)化合物。
作為固體環氧樹脂，只要與液狀環氧樹脂相容，於常溫為固體，則無特別限定，可列舉：雙酚A型環氧樹脂、雙酚F型環氧樹脂、多官能型環氧樹脂、二環戊二烯型環氧樹脂、酚醛清漆苯酚型環氧樹脂、聯苯型環氧樹脂、萘型環氧樹脂等，可自該等中單獨使用1種，或可組合2種以上而使用。該等中，較佳使用雙酚A型環氧樹脂。
作為液狀環氧樹脂，只要於常溫為液狀，則無特別限定，可列舉：雙酚A型環氧樹脂、雙酚F型環氧樹脂、酚醛清漆苯酚型環氧樹脂、萘型環氧樹脂等，可自該等中單獨使用1種，或可組合2種以上而使用。尤其是就膜之黏性、柔軟性等觀點而言，較佳使用雙酚A型環氧樹脂。
熱聚合起始劑中，作為熱自由基聚合起始劑，例如可列舉有機過氧化物、偶氮系化合物等。尤其可較佳地使用不會產生成為氣泡之原因之氮氣的有機過氧化物。
熱自由基聚合起始劑之使用量若過少，則變得硬化不良，若過多，則製品壽命(Life)降低，因此相對於(甲基)丙烯酸酯化合物100質量份，較佳為2~60質量份，更佳為5~40質量份。
作為熱陽離子聚合起始劑，可採用作為環氧化合物之熱陽離子聚合起始劑而公知者，例如可使用藉由熱而產生酸之錪鹽、鋶鹽、鏻鹽、二茂鐵類等，尤其可較佳地使用對溫度表現出良好之潛伏性的芳香族鋶鹽。
熱陽離子聚合起始劑之使用量過少亦有變得硬化不良之傾向，過多亦有製品壽命降低之傾向，因此相對於環氧化合物100質量份，較佳為2~60質量份，更佳為5~40質量份。
作為熱陰離子聚合起始劑，可使用通常使用之公知者。例如可列舉：有機酸二醯肼、二氰二胺、胺化合物、聚醯胺胺化合物、氰酸酯化合物、酚樹脂、酸酐、羧酸、三級胺化合物、咪唑、路易斯酸、布忍斯特酸鹽、聚硫醇系硬化劑、脲樹脂、三聚氰胺樹脂、異氰酸酯化合物、封端異氰酸酯化合物等，可自該等中單獨使用1種，或可組合2種以上而使用。該等中，較佳使用以咪唑改質體作為核，並且以聚胺酯被覆其表面而成之微膠囊型潛伏性硬化劑。
較佳於熱聚合性組成物中含有膜形成樹脂。膜形成樹脂相當於例如平均分子量為10000以上之高分子量樹脂，就膜形成性之觀點而言，較佳為10000~80000左右之平均分子量。作為膜形成樹脂，可列舉：苯氧基樹脂、聚酯樹脂、聚胺酯樹脂、聚酯胺酯樹脂、丙烯酸樹脂、聚醯亞胺樹脂、丁醛樹脂等各種樹脂，該等可單獨使用，亦可組合2種以上而使用。該等中，就膜形成狀態、連接可靠性等觀點而言，較佳適宜地使用苯氧基樹脂。
為了調整熔融黏度，亦可於熱聚合性組成物中含有絕緣性填料。其可列舉二氧化矽粉或氧化鋁粉等。絕緣性填料之大小較佳為粒徑20~1000nm，又，摻合量較佳相對於環氧化合物等熱聚合性化合物(光聚合性化合物)100質量份而設為5~50質量份。
進而，亦可含有與上述絕緣性填料不同之填充劑、軟化劑、促進劑、抗老化劑、著色劑(顏料、染料)、有機溶劑、離子捕捉劑(ion catcher agent)等。
又，亦可視需要摻合應力緩和劑、矽烷偶合劑、無機填料等。 作為應力緩和劑，可列舉：氫化苯乙烯-丁二烯嵌段共聚物、氫化苯乙烯-異戊二烯嵌段共聚物等。又，作為矽烷偶合劑，可列舉：環氧系、甲基丙烯醯氧基系、胺基系、乙烯基系、巰基/硫醚系、醯脲(ureide)系等。又，作為無機填料，可列舉：二氧化矽、滑石、氧化鈦、碳酸鈣、氧化鎂等。
絕緣性樹脂黏合劑3可藉由利用塗佈法將含有上述樹脂之塗層組成物成膜並加以乾燥，或進而進行硬化，或者預先利用公知之手法進行膜化而形成。絕緣性樹脂黏合劑3亦可藉由視需要將樹脂層進行積層而獲得。又，絕緣性樹脂黏合劑3較佳形成於經剝離處理之聚對酞酸乙二酯膜等剝離膜上。
(絕緣性樹脂黏合劑之黏度)
絕緣性樹脂黏合劑3之最低熔融黏度可根據異向性導電膜之製造方法等而適當決定。例如，於作為異向性導電膜之製造方法而進行以特定之配置將導電粒子保持於絕緣性樹脂黏合劑之表面，並將該導電粒子壓入至絕緣性樹脂黏合劑中之方法時，就使絕緣性樹脂黏合劑實現膜成形之方面而言，較佳為將樹脂之最低熔融黏度設為1100Pa‧s以上。又，如下文所述，就如圖12或圖13所示般於壓入至絕緣性樹脂黏合劑3中之導電粒子2的露出部分之周圍形成凹部3b，或如圖14所示般於壓入至絕緣性樹脂黏合劑3中之導電粒子2的正上方形成凹部3c之方面而言最低熔融黏度較佳為1500Pa‧s以上，更佳為2000Pa‧s以上，進而較佳為3000~15000Pa‧s，尤佳為3000~10000Pa‧s。關於該最低熔融黏度，作為一例，可使用旋轉式流變儀(TA instrument公司製造)，於升溫速度為10℃/分鐘、測量壓力為5g之條件下保持恆定，使用直徑8mm之測量板而求出。又，於在較佳為40 ~80℃、更佳為50~60℃進行將導電粒子2壓入至絕緣性樹脂黏合劑3中之步驟之情形時，就與上述同樣地形成凹部3b或3c之方面而言，於60℃之黏度之下限較佳為3000Pa‧s以上，更佳為4000Pa‧s以上，進而較佳為4500Pa‧s以上，上限較佳為20000Pa‧s以下，更佳為15000Pa‧s以下，進而較佳為10000Pa‧s以下。
藉由如上述般將構成絕緣性樹脂黏合劑3之樹脂的黏度設為高黏度，於使用異向性導電膜時，於在相對向之電子零件等連接對象物之間夾持著導電粒子2進行加熱加壓之情形時，可防止異向性導電膜內之導電粒子2因熔融之絕緣性樹脂黏合劑3之流動而隨之流走。
(絕緣性樹脂黏合劑之厚度)
絕緣性樹脂黏合劑3的厚度La較佳為1μm以上且60μm以下，更佳為1μm以上且30μm以下，進而較佳為2μm以上且15μm以下。又，絕緣性樹脂黏合劑3的厚度La就與導電粒子2的平均粒徑D之關係而言，較佳為該等之比(La/D)為0.6~10。若絕緣性樹脂黏合劑3的厚度La過大，則於異向性導電連接時導電粒子變得容易錯位，端子中之導電粒子之捕捉性降低。若La/D超過10，則該傾向顯著。因此，La/D更佳為8以下，進而更佳為6以下。反之，若絕緣性樹脂黏合劑3的厚度La過小而La/D未達0.6，則難以藉由絕緣性樹脂黏合劑3將導電粒子維持為特定之粒子分散狀態或特定之排列。尤其是於連接之端子為高密度COG之情形時，絕緣性樹脂黏合劑3的層厚La與導電粒子2的粒徑D之比(La/D)較佳為0.8~2。
(絕緣性樹脂黏合劑中之導電粒子之埋入態樣)
關於絕緣性樹脂黏合劑3中之導電粒子2之埋入狀態，並無特別限制， 於藉由在相對向之零件之間挾持異向性導電膜並進行加熱加壓而進行異向性導電連接之情形時，較佳如圖12、圖13所示般，使導電粒子2自絕緣性樹脂黏合劑3露出一部分，相對於鄰接之導電粒子2間之中央部的絕緣性樹脂黏合劑之表面3a的切平面3p而於導電粒子2之露出部分之周圍形成凹部3b，或如圖14所示般，於壓入至絕緣性樹脂黏合劑3內之導電粒子2之正上方的絕緣性樹脂黏合劑部分，相對於與上述同樣之切平面3p而形成凹部3c，使導電粒子2之正上方的絕緣性樹脂黏合劑3之表面存在起伏。針對在相對向之電子零件之電極間挾持導電粒子2進行加熱加壓時產生之導電粒子2之扁平化，藉由存在如圖12、圖13所示之凹部3b，與不存在凹部3b之情形相比，導電粒子2受到之來自絕緣性樹脂黏合劑3的阻力有所減少。因此，變得容易於相對向之電極間挾持導電粒子2，導通性能亦提高。又，構成絕緣性樹脂黏合劑3之樹脂中，藉由在導電粒子2之正上方的樹脂之表面形成凹部3c(圖14)，與不存在凹部3c之情形相比加熱加壓時之壓力變得容易集中於導電粒子2，而變得容易於電極中挾持導電粒子2，導通性能提高。
就容易獲得上述之凹部3b、3c之效果之方面而言，導電粒子2的露出部分周圍之凹部3b(圖12、圖13)的最大深度Le與導電粒子2的平均粒徑D之比(Le/D)較佳為未達50%，更佳為未達30%，進而較佳為20~25%，導電粒子2的露出部分周圍之凹部3b(圖12、圖13)的最大徑Ld與導電粒子2的平均粒徑D之比(Ld/D)較佳為100%以上，更佳為100~150%，導電粒子2之正上方的樹脂之凹部3c(圖14)的最大深度Lf與導電粒子2的平均粒徑D之比(Lf/D)較佳為大於0，且較佳為未達10%， 更佳為未達5%。
再者，導電粒子2的露出部分之徑Lc可設為導電粒子2的平均粒徑D以下，較佳為平均粒徑D之10~90%。可設為於導電粒子2的頂部2t之1點處露出，亦可設為導電粒子2完全埋設於絕緣性樹脂黏合劑3內，而徑Lc成為零。
(絕緣性樹脂黏合劑之厚度方向之導電粒子之位置)
就容易獲得上述凹部3b之效果之方面而言，鄰接之導電粒子2間之中央部處絕緣性樹脂黏合劑之表面3a的切平面3p距導電粒子2之最深部之距離(以下稱為埋入量)Lb與導電粒子2的平均粒徑D之比(Lb/D)(以下稱為埋入率)較佳為60%以上且105%以下。
<絕緣性接著層>
於本發明之異向性導電膜中，亦可於配置有導電粒子2的絕緣性樹脂黏合劑3上積層黏度或黏著性與構成絕緣性樹脂黏合劑3之樹脂不同的絕緣性接著層4。
於在絕緣性樹脂黏合劑3上形成上述之凹部3b之情形時，可如圖15所示之異向性導電膜1d般，絕緣性接著層4積層於絕緣性樹脂黏合劑3之形成有凹部3b之面，亦可如圖16所示之異向性導電膜1e般，積層於與形成有凹部3b之面為相反側之面。於絕緣性樹脂黏合劑3形成有凹部3c之情形時亦相同。藉由積層絕緣性接著層4，於使用異向性導電膜將電子零件進行異向性導電連接時，可填充由電子零件之電極或凸塊形成之空間，而提高接著性。
又，於將絕緣性接著層4積層於絕緣性樹脂黏合劑3之情形 時，不論絕緣性接著層4是否位於凹部3b、3c之形成面上，均較佳為絕緣性接著層4位於IC晶片等第1電子零件側(換言之，絕緣性樹脂黏合劑3位於基板等第2電子零件側)。藉此，可避免導電粒子之不經意之移動，而可提高捕捉性。再者，通常將IC晶片等第1電子零件設為按壓夾具側，將基板等第2電子零件設為載台側，將異向性導電膜與第2電子零件暫時壓接後，將第1電子零件與第2電子零件正式壓接，但根據第2電子零件之熱壓接區域之尺寸等，而將異向性導電膜暫貼於第1電子零件後，將第1電子零件與第2電子零件正式壓接。
作為絕緣性接著層4，可適當選擇公知之異向性導電膜中用作絕緣性接著層者而使用。絕緣性接著層4亦可設為使用與上述絕緣性樹脂黏合劑3同樣之樹脂並進一步將黏度調整為較低者。絕緣性接著層4與絕緣性樹脂黏合劑3之最低熔融黏度越存在差異，則越容易以絕緣性接著層4填充由電子零件的電極或凸塊形成之空間，而可期待提高電子零件彼此之接著性之效果。又，越存在該差異，則異向性導電連接時構成絕緣性樹脂黏合劑3的樹脂之移動量相對變得越小，因此端子之導電粒子的捕捉性越容易提高。實用上而言，絕緣性接著層4與絕緣性樹脂黏合劑3之最低熔融黏度比較佳為2以上，更佳為5以上，進而較佳為8以上。另一方面，若該比過大，則於將長尺寸的異向性導電膜製成捲裝體之情形時，有產生樹脂之溢出或黏連(blocking)之虞，因此實用上較佳為15以下。更具體而言，絕緣性接著層4之較佳之最低熔融黏度滿足上述之比，且為3000Pa‧s以下，更佳為2000Pa‧s以下，尤佳為100~2000Pa‧s。
作為絕緣性接著層4之形成方法，可藉由利用塗佈法將含有 與形成絕緣性樹脂黏合劑3之樹脂同樣之樹脂的塗層組成物成膜並加以乾燥，或進而進行硬化，或者預先利用公知之手法進行膜化而形成。
絕緣性接著層4之厚度較佳為1μm以上且30μm以下，更佳為2μm以上且15μm以下。
又，合併絕緣性樹脂黏合劑3與絕緣性接著層4而成之異向性導電膜整體的最低熔融黏度亦取決於絕緣性樹脂黏合劑3與絕緣性接著層4的厚度之比率，實用上可設為8000Pa‧s以下，為了容易填充至凸塊間，可為200~7000Pa‧s，較佳為200~4000Pa‧s。
亦可視需要於絕緣性樹脂黏合劑3或絕緣性接著層4中添加二氧化矽微粒子、氧化鋁、氫氧化鋁等絕緣性填料。絕緣性填料之摻合量較佳相對於構成該等層之樹脂100質量份而設為3質量份以上且40質量份以下。藉此，於異向性導電連接時即使異向性導電膜熔融，亦可抑制熔融之樹脂導致導電粒子不必要地移動。
<異向性導電膜之製造方法>
作為異向性導電膜之製造方法，例如，製造用以將導電粒子配置為特定之排列的轉印模具，於轉印模具之凹部填充導電粒子，使形成於剝離膜上之絕緣性樹脂黏合劑3覆於其上並施加壓力，而將導電粒子2壓入至絕緣性樹脂黏合劑3中，藉此使導電粒子2轉接著於絕緣性樹脂黏合劑3。或進而將絕緣性接著層4積層於該導電粒子2上。如此可獲得異向性導電膜1A。
又，於轉印模具之凹部填充導電粒子後，使絕緣性樹脂黏合劑覆於其上，使導電粒子自轉印模具轉印至絕緣性樹脂黏合劑之表面，將 絕緣性樹脂黏合劑上之導電粒子壓入至絕緣性樹脂黏合劑內，藉此亦可製造異向性導電膜。藉由該壓入時之按壓力、溫度等可調整導電粒子之埋入量(Lb)。又，藉由壓入時之絕緣性樹脂黏合劑之黏度、壓入速度、溫度等可調整凹部3b、3c之形狀及深度。例如，將導電粒子壓入時的絕緣性樹脂黏合劑之黏度設為下限較佳為3000Pa‧s以上，更佳為4000Pa‧s以上，進而較佳為4500Pa‧s以上，上限設為較佳為20000Pa‧s以下，更佳為15000Pa‧s以下，進而較佳為10000Pa‧s以下。又，可於較佳為40~80℃、更佳為50~60℃獲得此種黏度。更具體而言，於製造絕緣性樹脂黏合劑之表面具有圖12所示之凹部3b的異向性導電膜1a之情形時，可將導電粒子壓入時之絕緣性樹脂黏合劑的黏度設為8000Pa‧s(50~60℃)，於製造具有圖14所示之凹部3c之異向性導電膜1c之情形時，可將導電粒子壓入時之絕緣性樹脂黏合劑的黏度設為4500Pa‧s(50~60℃)。
再者，作為轉印模具，除了於凹部填充導電粒子者以外，亦可使用對凸部之頂面賦予微黏著劑並使導電粒子附著於該頂面而成者。
該等轉印模具可使用或應用機械加工、光微影法、印刷法等公知之技術而製造。
又，作為將導電粒子配置為特定之排列之方法，亦可使用利用雙軸延伸膜之方法等代替利用轉印模具之方法。
<捲裝體>
異向性導電膜為了連續供於電子零件之連接，較佳製成捲繞於捲盤而成之膜捲裝體。膜捲裝體之長度為5m以上即可，較佳為10m以上。並不特別存在上限，就出貨物之操作性之方面而言，較佳為5000m以下，更佳 為1000m以下，進而較佳為500m以下。
膜捲裝體可為藉由連接帶將短於全長之異向性導電膜連結而成者。連結部位可存在多處，可規則地存在，亦可隨機地存在。連接帶之厚度只要不阻礙性能，則並無特別限制，但由於若過厚，則會影響到樹脂之溢出或黏連，因此較佳為10~40μm。又，膜之寬度並無特別限制，作為一例，為0.5~5mm。
根據膜捲裝體，可實現連續之異向性導電連接，有助於降低連接體之成本。
<連接結構體>
本發明之異向性導電膜於藉由熱或光將FPC、IC晶片、IC模組等第1電子零件與FPC、剛性基板、陶瓷基板、玻璃基板、塑膠基板等第2電子零件進行異向性導電連接時可較佳地應用。又，亦可將IC晶片或IC模組進行堆疊而將第1電子零件彼此進行異向性導電連接。由此獲得之連接結構體及其製造方法亦為本發明之一部分。
作為使用異向性導電膜之電子零件之連接方法，就提高連接可靠性之方面而言，較佳例如將於異向性導電膜之膜厚方向上導電粒子靠近存在之側的界面暫貼於載置於載台之配線基板等第2電子零件，對暫貼之異向性導電膜搭載IC晶片等第1電子零件，並使用按壓夾具自第1電子零件側進行熱壓接。亦可利用光硬化進行同樣之電子零件之連接。
再者，於因配線基板等第2電子零件之連接區域之尺寸等導致難以將異向性導電膜暫貼於配線基板等第2電子零件之情形時，將異向性導電膜暫貼於載置於載台之IC晶片之第1電子零件，然後將第1電子零 件與第2電子零件進行熱壓接。
實施例
實驗例1~實驗例8
(異向性導電膜之製作)
關於用於COG連接之異向性導電膜，以如下方式研究絕緣性樹脂黏合劑之樹脂組成與導電粒子之配置對膜形成性能與導通特性造成之影響。
首先，以表1所示之組成分別製備形成絕緣性樹脂黏合劑及絕緣性接著層之樹脂組成物。於該情形時，藉由絕緣性樹脂組成物之製備條件調整樹脂組成物之最低熔融黏度。藉由棒式塗佈機將形成絕緣性樹脂黏合劑之樹脂組成物塗佈於膜厚50μm之PET膜上，於80℃之烘箱中乾燥5分鐘，而於PET膜上形成表2所示之厚度La的絕緣性樹脂黏合劑層。以同樣之方式將絕緣性接著層以表2所示之厚度形成於PET膜上。
繼而，以導電粒子之俯視下之配置成為表2所示之配置，其重複單元中之最接近導電粒子的中心間距離成為6μm之方式製作模具。 將公知的透明性樹脂之顆粒以經熔融之狀態流入至該模具中，冷卻使其凝固，藉此形成凹部為表2所示之配置的樹脂模。此處，於實驗例8中將導電粒子之配置設為六方晶格排列(個數密度22000個/mm2)，使其晶格軸之一相對於異向性導電膜之長邊方向傾斜15°。
作為導電粒子而準備金屬被覆樹脂粒子(積水化學工業股份有限公司，AUL703，平均粒徑3μm)，將該導電粒子填充至樹脂模之凹部中，使上述絕緣性樹脂黏合劑覆於其上，於60℃、0.5MPa進行按壓，藉此使其貼合。然後，將絕緣性樹脂黏合劑自模剝離，對絕緣性樹脂黏合劑上之導電粒子進行加壓(按壓條件：60~70℃、0.5Mpa)，藉此將其壓入至絕緣性樹脂黏合劑中，而製作將導電粒子以表2所示之狀態埋入至絕緣性樹脂黏合劑中之膜。於該情形時，導電粒子之埋入狀態係根據壓入條件加以控制。其結果，於實驗例4中，壓入導電粒子後膜形狀未得到維持，除此以外之實驗例中，可製作埋入有導電粒子之膜。於利用金屬顯微鏡之觀察中，如表2所示般於埋入之導電粒子的露出部分之周圍或埋入之導電粒子的正上方觀察到凹部。再者，於除實驗例4以外之各實驗例中觀察到導電粒子的露出部分周圍之凹部，及導電粒子正上方之凹部之兩者，於表4中按各實驗例示出最明確地觀察到凹部者之測量值。
藉由將絕緣性接著層積層於埋入有導電粒子之膜的壓入導電粒子之側，而製作樹脂層為2層型之異向性導電膜。但是於實驗例4中，壓入導電粒子後膜形狀未得到維持，因此未進行以下之評價。
(評價)
對於各實驗例之異向性導電膜，以如下方式測量(a)初始導通電阻與 (b)導通可靠性。將結果示於表2。
(a)初始導通電阻
將各實驗例之異向性導電膜挾持於載台上之玻璃基板與按壓工具側之導通特性評價用IC之間，藉由按壓工具進行加熱加壓(180℃、5秒)而獲得各評價用連接物。於該情形時，將利用按壓工具而獲得之推力變為低(40MPa)、中(60MPa)、高(80MPa)之3個階段，而獲得3種評價用連接物。
此處，關於導通特性評價用IC與玻璃基板，該等之端子圖案相對應，尺寸如下所述。又，於連結評價用IC與玻璃基板時，將異向性導電膜之長邊方向與凸塊之短邊方向對齊。
導通特性評價用IC
外形：1.8×20.0mm
厚度：0.5mm
凸塊規格：尺寸30×85μm、凸塊間距離50μm、凸塊高度15μm
玻璃基板(ITO配線)
玻璃材質：康寧公司製造之1737F
外形：30×50mm
厚度：0.5mm
電極：ITO配線
測量獲得之評價用連接物之初始導通電阻，按照以下之3個階段之評價基準進行評價。
初始導通電阻之評價基準(實用上，只要未達2Ω，則無問題)
A：未達0.4Ω
B：0.4Ω以上且未達0.8Ω
C：0.8Ω以上
(b)導通可靠性
進行將(a)中製作之評價用連接物於溫度85℃、濕度85%RH之恆溫槽中放置500小時之可靠性試驗，與初始導通電阻同樣地測量之後的導通電阻，按照以下之3個階段之評價基準進行評價。
導通可靠性之評價基準(實用上，只要未達5Ω，則無問題)
A：未達1.2Ω
B：1.2Ω以上且未達2Ω
C：2Ω以上
根據表2可知，於絕緣性樹脂黏合劑之最低熔融黏度為800Pa‧s之實驗例4中難以形成於導電粒子附近之絕緣性樹脂黏合劑中具有凹部之膜。另一方面，可知於絕緣性樹脂黏合劑之最低熔融黏度為1500Pa‧s以上之實驗例中，藉由調整導電粒子之埋入時之條件而可於絕緣性樹脂黏合劑之導電粒子附近形成凸部，且如此獲得之異向性導電膜於用於COG時導通特性良好。又，可知與六方晶格排列之實驗例8相比，於導電粒子之個數密度較低的實驗例1~7中，可於更低之壓力下進行異向性導電連接。
(c)短路率
使用實驗例1~3與5~8之異向性導電膜，使用以下之短路率之評價用IC，於180℃、60MPa、5秒之連接條件下獲得評價用連接物，測量獲得之評價用連接物之短路數，以測量之短路數相對於評價用IC之端子數之比例之形式求出短路率。
短路率之評價用IC(7.5μm空間之梳齒TEG(test element group，測試元件組)：
外形：15×13mm
厚度：0.5mm
凸塊規格：尺寸25×140μm、凸塊間距離7.5μm、凸塊高度15μm
短路只要未達50ppm，則於實用上較佳，實驗例1~3與5~8之異向性導電膜全部未達50ppm。
再者，對於除實驗例4以外之各實驗例，測量由每個凸塊捕捉之導電粒子，結果均捕捉到10個以上之導電粒子。
實驗例9~16
(異向性導電膜之製作)
關於用於FOG連接之異向性導電膜，以如下方式研究絕緣性樹脂黏合劑之樹脂組成與導電粒子之配置對膜形成性能與導通特性造成之影響。
即，以表3所示之組成製備形成絕緣性樹脂黏合劑與絕緣性接著層之樹脂組成物，使用該等，以與實驗例1同樣之方式製作異向性導電膜。將該情形時之導電粒子之配置與最接近粒子之中心間距離示於表4。於實驗例16中將導電粒子之配置設為六方晶格排列(個數密度15000個/mm2)，使其晶格軸之一相對於異向性導電膜之長邊方向傾斜15°。
於該異向性導電膜之製作步驟中，將導電粒子壓入至絕緣性樹脂黏合劑中後，於實驗例12中膜形狀未得到維持，於除此以外之實驗例中膜形狀得以維持。因此，對於除實驗例12以外之實驗例之異向性導電膜，利用金屬顯微鏡觀察導電粒子之埋入狀態並進行測量，進而進行以下之評價。將各實驗例中之導電粒子之埋入狀態示於表4。表4所示之埋入狀態與表2同樣，為針對各實驗例最明確地觀察到絕緣性樹脂黏合劑之凹部者之測量值。
(評價)
對於各實驗例之異向性導電膜，以如下方式測量(a)初始導通電阻與(b)導通可靠性。將結果示於表4。
(a)初始導通電阻
將各實驗例中獲得之異向性導電膜按照2mm×40mm裁斷，挾持於導通特性之評價用FPC與玻璃基板之間，以工具寬度2mm進行加熱加壓(180 ℃、5秒)，而獲得各評價用連接物。於該情形時，將利用按壓工具而獲得之推力變為低(3MPa)、中(4.5MPa)、高(6MPa)之3個階段，而獲得3種評價用連接物。與實驗例1同樣地測量獲得之評價用連接物之導通電阻，按照以下之基準以3個階段評價該測量值。
評價用FPC：
端子間距：20μm
端子寬度/端子間空間：8.5μm/11.5μm
聚醯亞胺膜厚(PI)/銅箔厚(Cu)=38/8、鍍錫(Sn plating)
無鹼玻璃基板：
電極：ITO配線
厚度：0.7mm
初始導通電阻之評價基準
A：未達1.6Ω
B：1.6Ω以上且未達2.0Ω
C：2.0Ω以上
(b)導通可靠性
將(a)中製作之評價用連接物於溫度85℃、濕度85%RH之恆溫槽中放置500小時，與初始導通電阻同樣地測量之後的導通電阻，按照以下之基準以3個階段評價該測量值。
導通可靠性之評價基準
A：未達3.0Ω
B：3.0Ω以上且未達4Ω
C：4.0Ω以上
根據表4可知，於絕緣性樹脂黏合劑之最低熔融黏度為800Pa‧s之實驗例12中，難以形成具有凹部之膜。另一方面，可知於絕緣性樹脂層之最低熔融黏度為1500Pa‧s以上之實驗例中，藉由調整導電粒子之埋入時之條件，可於絕緣性樹脂黏合劑之導電粒子附近形成凹部，且如此獲得之異向性導電膜於用於FOG時導通特性良好。
(c)短路率
對已測量初始導通電阻之評價用連接物之短路數進行測量，根據測量獲得之短路數與評價用連接物之間隙數求出短路發生率。只要短路發生率未達100ppm，則於實用上無問題。實驗例9~11與13~16之短路發生率均未達100ppm。
再者，對於除實驗例12以外之各實驗例，測量由每個凸塊捕捉之導電粒子，結果均捕捉到10個以上之導電粒子。

Claims (14)

  1. 一種異向性導電膜，其於絕緣性樹脂黏合劑中配置有導電粒子，且其重複配置有導電粒子之重複單元，該導電粒子之重複單元係導電粒子隔開間隔排列為一列而成之導電粒子列且為導電粒子數不同者並列而成，依序連結形成重複單元之外形的導電粒子之中心而形成多角形，被重複配置之重複單元之間存在未配置導電粒子之區域。
  2. 如申請專利範圍第1項之異向性導電膜，其中，重複單元配置於異向性導電膜之整個面。
  3. 如申請專利範圍第1或2項之異向性導電膜，其中，構成重複單元中並列之導電粒子列的導電粒子數逐漸不同。
  4. 如申請專利範圍第1或2項之異向性導電膜，其中，於重複單元中並列之3列導電粒子列中，構成中央之導電粒子列的導電粒子數多於或少於構成兩側之導電粒子列的導電粒子數。
  5. 如申請專利範圍第1或2項之異向性導電膜，其中，形成重複單元之多角形的各邊與異向性導電膜之長邊方向或短邊方向斜交。
  6. 如申請專利範圍第1或2項之異向性導電膜，其中，形成重複單元之多角形具有與異向性導電膜之長邊方向或短邊方向平行之邊。
  7. 如申請專利範圍第1或2項之異向性導電膜，其中，於重複單元中導電粒子列彼此平行。
  8. 如申請專利範圍第1或2項之異向性導電膜，其與重複單元一併重複配置有單獨之導電粒子。
  9. 如申請專利範圍第1或2項之異向性導電膜，其中，於重複單元內， 鄰接之導電粒子彼此之最接近距離為導電粒子的平均粒徑之0.5倍以上。
  10. 如申請專利範圍第1或2項之異向性導電膜，其中，構成重複單元之導電粒子係自導電粒子存在於六方晶格或正方晶格之各晶格點之配置規則地除去特定之晶格點之導電粒子而成之配置。
  11. 一種連接結構體，其藉由申請專利範圍第1至10項中任一項之異向性導電膜將第1電子零件與第2電子零件進行異向性導電連接。
  12. 一種連接結構體之製造方法，其藉由經由異向性導電膜將第1電子零件與第2電子零件進行熱壓接而製造第1電子零件與第2電子零件之連接結構體，且其使用申請專利範圍第1至10項中任一項之異向性導電膜作為異向性導電膜。
  13. 一種異向性導電膜之製造方法，其於絕緣性樹脂黏合劑中配置導電粒子，且重複配置導電粒子之重複單元，該導電粒子之重複單元係導電粒子隔開間隔排列為一列而成之導電粒子列且為導電粒子數不同者並列而成。
  14. 一種異向性導電膜之設計方法，其於絕緣性樹脂黏合劑中配置導電粒子，且重複配置導電粒子之重複單元，該導電粒子之重複單元係導電粒子隔開間隔排列為一列而成之導電粒子列且為導電粒子數不同者並列而成。
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997045893A1 (en) * 1996-05-31 1997-12-04 The Whitaker Corporation Anisotropic conductive film
JP2011100654A (ja) * 2009-11-06 2011-05-19 Sharp Corp 異方性導電膜、及びその製造方法
TWI346230B (en) * 2005-08-04 2011-08-01 Getner Foundation L L C Display device having an anisotropic-conductive adhesive film
US20150243626A1 (en) * 2012-09-18 2015-08-27 Dexerials Corporation Anisotropic conductive film, method for producing anisotropic conductive film, method for producing connection body, and connection method
WO2015174447A1 (ja) * 2014-05-15 2015-11-19 デクセリアルズ株式会社 異方性導電フィルム
JP2016015205A (ja) * 2014-06-30 2016-01-28 デクセリアルズ株式会社 異方導電性フィルム及び接続構造体

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6032282B2 (ja) * 1976-09-09 1985-07-27 東レ株式会社 異方導電性シ−トおよびその製造方法
JPH0461398A (ja) * 1990-06-29 1992-02-27 Mitsubishi Kasei Corp 層間回路接続方法
US20010008169A1 (en) * 1998-06-30 2001-07-19 3M Innovative Properties Company Fine pitch anisotropic conductive adhesive
JP4887700B2 (ja) * 2005-09-09 2012-02-29 住友ベークライト株式会社 異方導電性フィルムおよび電子・電機機器
JP2009076431A (ja) * 2007-01-31 2009-04-09 Tokai Rubber Ind Ltd 異方性導電膜およびその製造方法
JP2010251337A (ja) * 2010-08-05 2010-11-04 Sony Chemical & Information Device Corp 異方性導電膜及びその製造方法並びに接続構造体
JP6169914B2 (ja) * 2012-08-01 2017-07-26 デクセリアルズ株式会社 異方性導電フィルムの製造方法、異方性導電フィルム、及び接続構造体
US10412837B2 (en) * 2012-08-29 2019-09-10 Dexerials Corporation Anisotropic conductive film and method of producing the same
JP2015032500A (ja) * 2013-08-05 2015-02-16 株式会社クラレ 異方性導電体膜とその製造方法、デバイス、電子放出素子、フィールドエミッションランプ、及びフィールドエミッションディスプレイ
JP2015079586A (ja) * 2013-10-15 2015-04-23 デクセリアルズ株式会社 異方性導電フィルム
JP6119718B2 (ja) * 2013-11-19 2017-04-26 デクセリアルズ株式会社 異方導電性フィルム及び接続構造体
WO2015151874A1 (ja) * 2014-03-31 2015-10-08 デクセリアルズ株式会社 異方性導電フィルム及びその製造方法
JP6661969B2 (ja) * 2014-10-28 2020-03-11 デクセリアルズ株式会社 異方性導電フィルム及び接続構造体

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997045893A1 (en) * 1996-05-31 1997-12-04 The Whitaker Corporation Anisotropic conductive film
TWI346230B (en) * 2005-08-04 2011-08-01 Getner Foundation L L C Display device having an anisotropic-conductive adhesive film
JP2011100654A (ja) * 2009-11-06 2011-05-19 Sharp Corp 異方性導電膜、及びその製造方法
US20150243626A1 (en) * 2012-09-18 2015-08-27 Dexerials Corporation Anisotropic conductive film, method for producing anisotropic conductive film, method for producing connection body, and connection method
WO2015174447A1 (ja) * 2014-05-15 2015-11-19 デクセリアルズ株式会社 異方性導電フィルム
JP2016015205A (ja) * 2014-06-30 2016-01-28 デクセリアルズ株式会社 異方導電性フィルム及び接続構造体

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