JP2017191779A - 有機発光表示装置 - Google Patents
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 259
- 239000002184 metal Substances 0.000 claims abstract description 259
- 239000000758 substrate Substances 0.000 claims abstract description 166
- 239000000565 sealant Substances 0.000 claims abstract description 45
- 239000010410 layer Substances 0.000 claims description 303
- 230000002093 peripheral effect Effects 0.000 claims description 31
- 239000011229 interlayer Substances 0.000 claims description 29
- 239000003990 capacitor Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 description 78
- 239000011159 matrix material Substances 0.000 description 11
- 239000007769 metal material Substances 0.000 description 9
- 239000011810 insulating material Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 101150037603 cst-1 gene Proteins 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
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- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/127—Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
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- H10K59/17—Passive-matrix OLED displays
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- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Abstract
Description
駆動トランジスタT1は、駆動チャネル131aと、駆動ゲート電極155aと、駆動ソース電極136aと、駆動ドレイン電極137aとを含む。駆動ゲート電極155aは、駆動チャネル131aと重なっており、駆動ソース電極136aおよび駆動ドレイン電極137aは、駆動チャネル131aの両側に隣接してそれぞれ形成されている。駆動ゲート電極155aは、コンタクトホール61を介して第1データ接続部材174に接続されている。
ストレージキャパシタCstは、第2ゲート絶縁膜142を挟んで配置される第1ストレージ電極155aおよび第2ストレージ電極156を含む。第1ストレージ電極155aは、駆動ゲート電極155aに相当し、第2ストレージ電極156は、ストレージ線157から拡張された部分であって、駆動ゲート電極155aより広い面積を占め、駆動ゲート電極155aを全て覆っている。
第3データ接続部材179は、コンタクトホール81を介して画素電極191に接続されており、第2データ接続部材175は、コンタクトホール82を介して初期化電圧線192に接続されている。
136a:駆動ソース電極
136b:スイッチングソース電極
137a:駆動ドレイン電極
137b:スイッチングドレイン電極
155a:駆動ゲート電極
155b:スイッチングゲート電極
160:層間絶縁膜
161:第1コンタクトホール
162:第2コンタクトホール
370:有機発光層
500:ダミー金属層
510:第1ダミー金属層
512:ホールパターン
520:第2ダミー金属層
650:シーラント
Claims (10)
- 表示領域および非表示領域を含む第1基板と、
前記第1基板の前記非表示領域に位置し、互いに重なる第1ダミー金属層および第2ダミー金属層を含むダミー金属層と、
前記第1ダミー金属層と前記第2ダミー金属層との間に位置する絶縁層と、
前記第1基板を覆う第2基板と、
前記第1基板と前記第2基板との間に位置し、前記ダミー金属層と重なるシーラントとを含み、
前記第1ダミー金属層と前記第2ダミー金属層とは、電気的に接続されており、前記シーラントは、前記第2ダミー金属層と接触する有機発光表示装置。 - 前記絶縁層は、前記第1ダミー金属層の少なくとも一部と重なる第1コンタクトホールを有し、
前記第2ダミー金属層は、前記絶縁層上に位置し、前記第1コンタクトホールを介して前記第1ダミー金属層に接続されている、請求項1に記載の有機発光表示装置。 - 前記第2ダミー金属層の比抵抗は、前記第1ダミー金属層の比抵抗より小さい、請求項1に記載の有機発光表示装置。
- 前記第1基板の前記表示領域に位置する半導体と、
前記半導体上に位置するゲート絶縁膜と、
前記ゲート絶縁膜上に位置するゲート配線と、
前記ゲート配線上に位置する層間絶縁膜と、
前記層間絶縁膜上に位置するデータ配線とをさらに含む、請求項1に記載の有機発光表示装置。 - 前記第1ダミー金属層および前記第2ダミー金属層は、平面図にて、前記第1基板の周縁と並行して延びる棒の形状を有する、請求項1に記載の有機発光表示装置。
- 表示領域および非表示領域を含む第1基板と、
前記第1基板に対向する第2基板と、
前記第1基板の表示領域に位置する画素と、
前記第1基板の非表示領域に位置するダミー金属層とを含み、
前記画素は、
ストレージキャパシタと、
アノードおよびカソードを含む有機発光ダイオードと、
第1ゲート電極を含む駆動トランジスタと、
第2ゲート電極を含むスイッチングトランジスタとを含み、
前記ダミー金属層は、第1ダミー金属層と第2ダミー金属層とを含み、前記第1ダミー金属層と前記第2ダミー金属層とは、互いに重なり、
断面上で、絶縁層が、前記第1ダミー金属層と前記第2ダミー金属層との間にあって、前記第1基板の非表示領域に位置し、
前記第1基板と前記第2基板との間にて、前記第1基板の非表示領域に、前記ダミー金属層と重なるようにシーラントが位置し、
前記第1ダミー金属層、前記第1ゲート電極、および前記第2ゲート電極は、同一材料からなる有機発光表示装置。 - 前記第1ゲート電極は、前記ストレージキャパシタの第1端部に接続されており、
前記ストレージキャパシタの第2端部は、駆動電圧線に接続されており、
前記第2ゲート電極は、スキャン線に接続されており、
前記アノードは、前記駆動トランジスタのドレイン電極に接続されており、
前記カソードは、前記共通電圧線に接続されている、請求項6に記載の有機発光表示装置。 - 前記絶縁層は、前記第1ダミー金属層の少なくとも一部と重なる第1コンタクトホールを含み、
前記第2ダミー金属層は、前記絶縁層上に位置し、前記第1コンタクトホールを介して前記第1ダミー金属層に接続されている、請求項6に記載の有機発光表示装置。 - 前記第2ダミー金属層の比抵抗は、前記第1ダミー金属層の比抵抗より小さい、請求項6に記載の有機発光表示装置。
- 前記第1ダミー金属層は、モリブデンからなり、
前記第2ダミー金属層は、アルミニウムからなる、請求項9に記載の有機発光表示装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR10-2016-0046265 | 2016-04-15 | ||
KR1020160046265A KR102568631B1 (ko) | 2016-04-15 | 2016-04-15 | 유기 발광 표시 장치 |
Publications (2)
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JP2017191779A true JP2017191779A (ja) | 2017-10-19 |
JP7053163B2 JP7053163B2 (ja) | 2022-04-12 |
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JP2017081339A Active JP7053163B2 (ja) | 2016-04-15 | 2017-04-17 | 有機発光表示装置 |
Country Status (5)
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US (1) | US11600673B2 (ja) |
EP (1) | EP3232489B1 (ja) |
JP (1) | JP7053163B2 (ja) |
KR (1) | KR102568631B1 (ja) |
CN (2) | CN107302060A (ja) |
Cited By (1)
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KR20190125558A (ko) * | 2018-04-27 | 2019-11-07 | 삼성디스플레이 주식회사 | 표시장치 |
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KR102447864B1 (ko) * | 2017-09-29 | 2022-09-28 | 삼성디스플레이 주식회사 | 표시 기판 및 이를 포함하는 유기 발광 표시 장치 |
CN108428804A (zh) * | 2018-04-19 | 2018-08-21 | 武汉华星光电技术有限公司 | Oled显示面板及其封装方法 |
KR20200075544A (ko) * | 2018-12-18 | 2020-06-26 | 엘지디스플레이 주식회사 | 유기발광 표시장치 및 이의 제조 방법 |
CN109830616B (zh) | 2019-03-28 | 2021-08-27 | 京东方科技集团股份有限公司 | 一种显示面板及其制备方法、显示装置 |
CN110197843B (zh) * | 2019-05-31 | 2021-10-26 | 武汉天马微电子有限公司 | 显示面板和显示装置 |
CN110164949B (zh) * | 2019-06-27 | 2021-09-07 | 上海天马有机发光显示技术有限公司 | 显示面板及显示装置 |
CN111276631B (zh) * | 2020-02-18 | 2022-09-09 | Oppo广东移动通信有限公司 | Oled显示面板和电子设备 |
CN114079020B (zh) * | 2020-08-18 | 2022-11-01 | 华为技术有限公司 | 显示屏及其封装方法、终端 |
CN114761867B (zh) * | 2020-09-29 | 2023-08-01 | 京东方科技集团股份有限公司 | 显示基板及其制作方法、显示装置 |
WO2022178809A1 (zh) * | 2021-02-26 | 2022-09-01 | 京东方科技集团股份有限公司 | 显示基板及其制作方法、显示装置 |
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KR20170119021A (ko) | 2017-10-26 |
EP3232489B1 (en) | 2024-05-01 |
KR102568631B1 (ko) | 2023-08-21 |
CN107302060A (zh) | 2017-10-27 |
EP3232489A1 (en) | 2017-10-18 |
US20170301739A1 (en) | 2017-10-19 |
CN114864650A (zh) | 2022-08-05 |
JP7053163B2 (ja) | 2022-04-12 |
US11600673B2 (en) | 2023-03-07 |
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