JP7046578B2 - 表示装置 - Google Patents
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- JP7046578B2 JP7046578B2 JP2017231761A JP2017231761A JP7046578B2 JP 7046578 B2 JP7046578 B2 JP 7046578B2 JP 2017231761 A JP2017231761 A JP 2017231761A JP 2017231761 A JP2017231761 A JP 2017231761A JP 7046578 B2 JP7046578 B2 JP 7046578B2
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- 238000007689 inspection Methods 0.000 claims description 102
- 239000000758 substrate Substances 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 139
- 230000002093 peripheral effect Effects 0.000 description 22
- 239000011229 interlayer Substances 0.000 description 20
- 239000003990 capacitor Substances 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 4
- 101150037603 cst-1 gene Proteins 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002313 adhesive film Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H10K59/80—Constructional details
- H10K59/82—Interconnections, e.g. terminals
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- H01L24/02—Bonding areas ; Manufacturing methods related thereto
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- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136254—Checking; Testing
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/0612—Layout
- H01L2224/0613—Square or rectangular array
- H01L2224/06134—Square or rectangular array covering only portions of the surface to be connected
- H01L2224/06135—Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
- H01L2924/141—Analog devices
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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Description
第3データ連結部材179は接触孔81を通じて画素電極191と連結されており、第2データ連結部材175は接触孔82を通じて初期化電圧線192と連結されている。
140 ゲート絶縁膜
141 第1ゲート絶縁膜
142 第2ゲート絶縁膜
600、1600、2600 データパッド
650 ダミーデータパッド
671 第1補助データパッド
672 第2補助データパッド
700、1700、2700 連結配線
800 検査回路部
900、1900、2900 検査配線
Claims (9)
- 表示領域およびパッド領域を含む基板、
前記基板のパッド領域の上に位置し、第1方向および第2方向に沿って整列されている複数のデータパッド、および
前記複数のデータパッドそれぞれに連結されている連結配線を含み、
前記複数のデータパッドは、
第1データパッド、
前記第1データパッドと前記第1方向にて隣接するように位置する第2データパッド、
前記第1データパッドと前記第2方向にて隣接するように位置する第3データパッド、および
前記第2データパッドと前記第2方向にて隣接するように位置する第4データパッドを含み、
前記連結配線は、
前記第1データパッドに連結されている第1連結配線、および
前記第2データパッドに連結されており、前記第1データパッドと前記第3データパッドとの間に位置する第2連結配線を含み、
前記第1データパッドと前記第2連結配線とは互いに異なる層に位置し、
前記基板の表示領域の上に位置する半導体、
前記半導体の上に積層されている第1ゲート絶縁膜および第2ゲート絶縁膜、
前記第1ゲート絶縁膜と前記第2ゲート絶縁膜との間に位置する第1ゲート配線、および
前記第2ゲート絶縁膜の上に位置する第2ゲート配線をさらに含み、
前記第1データパッドは前記第1ゲート配線と同一の層に位置し、
前記第2データパッドは前記第2ゲート配線と同一の層に位置し、
前記第1データパッドは前記第1ゲート配線と同一の物質を含み、
前記第2データパッドは前記第2ゲート配線と同一の物質を含む表示装置。 - 表示領域およびパッド領域を含む基板、
前記基板のパッド領域の上に位置し、第1方向および第2方向に沿って整列されている複数のデータパッド、および
前記複数のデータパッドそれぞれに連結されている連結配線を含み、
前記複数のデータパッドは、
第1データパッド、
前記第1データパッドと前記第1方向にて隣接するように位置する第2データパッド、
前記第1データパッドと前記第2方向にて隣接するように位置する第3データパッド、および
前記第2データパッドと前記第2方向にて隣接するように位置する第4データパッドを含み、
前記連結配線は、
前記第1データパッドに連結されている第1連結配線、および
前記第2データパッドに連結されており、前記第1データパッドと前記第3データパッドとの間に位置する第2連結配線を含み、
前記第1データパッドと前記第2連結配線とは互いに異なる層に位置し、
前記複数のデータパッドは、
前記第2データパッドと前記第1方向にて隣接するように位置する第5データパッドをさらに含み、
前記第5データパッドは前記第2データパッドと互いに異なる層に位置し、
前記第5データパッドは前記第1データパッドと同一の層に位置し、
前記複数のデータパッドは、
前記第5データパッドと前記第1方向にて隣接するように位置する第6データパッドをさらに含み、
前記第6データパッドは前記第5データパッドと互いに異なる層に位置し、
前記第6データパッドは前記第2データパッドと同一の層に位置し、
前記第1データパッドと前記第3データパッドとの間には、前記複数の連結配線のうち、3つの連結配線が位置する表示装置。 - 表示領域およびパッド領域を含む基板、
前記基板のパッド領域の上に位置し、第1方向および第2方向に沿って整列されている複数のデータパッド、および
前記複数のデータパッドそれぞれに連結されている連結配線を含み、
前記複数のデータパッドは、
第1データパッド、
前記第1データパッドと前記第1方向にて隣接するように位置する第2データパッド、
前記第1データパッドと前記第2方向にて隣接するように位置する第3データパッド、および
前記第2データパッドと前記第2方向にて隣接するように位置する第4データパッドを含み、
前記連結配線は、
前記第1データパッドに連結されている第1連結配線、および
前記第2データパッドに連結されており、前記第1データパッドと前記第3データパッドとの間に位置する第2連結配線を含み、
前記第1データパッドと前記第2連結配線とは互いに異なる層に位置し、
前記第2連結配線は、前記第1データパッドと少なくとも一部重畳する表示装置。 - 前記第3データパッドと前記第2連結配線とは互いに異なる層に位置し、
前記第1データパッドと前記第2データパッドとは互いに異なる層に位置し、
前記第1データパッドと前記第3データパッドは同一の層に位置し、
前記第2データパッドと前記第4データパッドは同一の層に位置し、
前記第1連結配線は、前記第1データパッドと同一の層に位置し、前記第1データパッドに直接連結されており、
前記第2連結配線は、前記第2データパッドと同一の層に位置し、前記第2データパッドに直接連結されている請求項1~3のいずれかに記載の表示装置。 - 前記基板上に積層されている第1ゲート絶縁膜および第2ゲート絶縁膜をさらに含み、
前記第1データパッドおよび前記第3データパッドは、前記第1ゲート絶縁膜と前記第2ゲート絶縁膜との間に位置し、
前記第2データパッドおよび前記第4データパッドは、前記第2ゲート絶縁膜の上に位置する請求項1~3のいずれかに記載の表示装置。 - 前記基板の表示領域の上に位置する複数のゲート線および複数のデータ線をさらに含み、
前記複数の連結配線は前記複数のデータ線に連結されている請求項1~3のいずれかに記載の表示装置。 - 前記基板のパッド領域の上に位置する検査回路部、および
前記複数のデータパッドと前記検査回路部を連結する複数の検査配線をさらに含み、
前記検査配線は、
前記第1データパッドと前記検査回路部を連結する第1検査配線、および
前記第2データパッドと前記検査回路部を連結する第2検査配線を含み、
前記第1検査配線は、前記第1データパッドと同一の層に位置し、前記第1データパッドに直接的に連結されており、
前記第2検査配線は、前記第2データパッドと同一の層に位置し、前記第2データパッドに直接連結されている請求項1~3のいずれかに記載の表示装置。 - 前記データパッドと隣接するように位置するダミーデータパッドをさらに含み、
前記ダミーデータパッドは前記データパッドと同一層に位置する請求項1~3のいずれかに記載の表示装置。 - 前記複数のデータパッドは、
前記第2データパッドと前記第1方向にて隣接するように位置する第5データパッドをさらに含み、
前記第5データパッドは前記第2データパッドと互いに異なる層に位置し、
前記第5データパッドは前記第1データパッドと同一の層に位置し、
前記第3データパッドは前記第1データパッドと互いに異なる層に位置し、
前記第3データパッドは前記第2データパッドと同一の層に位置する請求項1に記載の表示装置。
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US20180158837A1 (en) | 2018-06-07 |
EP3330790A1 (en) | 2018-06-06 |
US20210134842A1 (en) | 2021-05-06 |
JP2018092171A (ja) | 2018-06-14 |
US10910409B2 (en) | 2021-02-02 |
KR102593485B1 (ko) | 2023-10-24 |
EP3330790B1 (en) | 2020-05-13 |
CN108155209A (zh) | 2018-06-12 |
CN108155209B (zh) | 2023-08-25 |
TWI745489B (zh) | 2021-11-11 |
KR20230151504A (ko) | 2023-11-01 |
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US11862645B2 (en) | 2024-01-02 |
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