JP2017174855A - 基板保持装置および基板処理装置 - Google Patents
基板保持装置および基板処理装置 Download PDFInfo
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- JP2017174855A JP2017174855A JP2016056007A JP2016056007A JP2017174855A JP 2017174855 A JP2017174855 A JP 2017174855A JP 2016056007 A JP2016056007 A JP 2016056007A JP 2016056007 A JP2016056007 A JP 2016056007A JP 2017174855 A JP2017174855 A JP 2017174855A
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- 239000000758 substrate Substances 0.000 title claims abstract description 154
- 238000000576 coating method Methods 0.000 claims description 48
- 239000011248 coating agent Substances 0.000 claims description 45
- 238000001179 sorption measurement Methods 0.000 claims description 24
- 239000007788 liquid Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 11
- 230000007246 mechanism Effects 0.000 description 11
- 230000003028 elevating effect Effects 0.000 description 8
- 239000002245 particle Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000010438 granite Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6734—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/002—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor using materials containing microcapsules; Preparing or processing such materials, e.g. by pressure; Devices or apparatus specially designed therefor
- G03F7/0022—Devices or apparatus
- G03F7/0025—Devices or apparatus characterised by means for coating the developer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
2 スリットノズル
3 基板
4 ステージ(保持部)
5 塗布処理部(処理部)
6 制御部
7 リフトピン
9 基板保持装置
40 昇降部
41 保持面
42 吸着孔
43 ピン孔
45 昇降駆動部
54 リニアモータ
71 シール部材
71a 切欠き部
80 配管系
81 第1排気配管
82 第2排気配管
83 第1切換えバルブ
84 第2切換えバルブ
85 負圧源
86 圧空源
87 圧空配管
88 開放配管
Claims (8)
- 基板が載置される保持面を有する保持部と、
保持部に設けられた複数の吸着孔と、
保持面に対して昇降する複数のリフトピンと、
保持部に設けられ、複数のリフトピンがそれぞれ挿通される複数のピン孔と、
複数の吸引孔に負圧を発生させる第1負圧発生部と、
複数のピン孔の内、1以上のピン孔に負圧を発生される第2負圧発生部と、
を備える基板保持装置。 - 請求項1に記載される基板保持装置において、
リフトピンが挿通されるとともに、ピン孔内にて上方空間と下方空間との間をシールするシール部材と、
シール部材に設けられた切欠き部と、
をさらに備え、
前記切欠き部により排気流路が形成される基板保持装置。 - 請求項1または請求項2に記載される基板保持装置において、
第1負圧発生部は、
複数の吸着孔と負圧源とを流路接続する第1排気配管と、
第1排気配管と圧空源とを流路接続する圧空配管と、
第1排気配管が負圧源に流路接続する吸着状態、または、第1排気配管が圧空配管に流路接続する吸着解除状態に選択的に切り替える第1切換えバルブと、を有し、
第2負圧発生部は、
ピン孔と負圧源とを流路接続する第2排気配管と、
第2排気配管を大気に開放する開放配管と、
第2排気配管が負圧源に流路接続する吸着状態、または、第2排気配管が開放配管に流路接続する吸着解除状態に選択的に切り替える第2切換えバルブと、を有する基板保持装置。 - 請求項1から請求項3のいずれに記載される基板保持装置において、
第2負圧発生部は複数のピン孔の内の一部のピン孔についてのみに負圧を発生させる基板保持装置。 - 請求項4に記載される基板保持装置において、
第2負圧発生部は複数のピン孔の内の保持面に載置される基板の中央部に対向するピン孔についてのみに負圧を発生させる基板保持装置。 - 請求項1から請求項5のいずれかに記載される基板保持装置と、
基板保持装置の保持部に保持された基板に所定の処理を施す処理部と、
を備える基板処理装置。 - 請求項6に記載される基板処理装置において、
処理部が基板保持装置の保持部に保持された基板の表面に塗布液を塗布する塗布処理部である基板処理装置。 - 請求項7に記載される基板処理装置において、
塗布処理部がスリット状の吐出口から塗布液を吐出するスリットノズルと、吐出口の長手方向と直交する方向にスリットノズルを移動させるスリットノズル移動部とを有する基板処理装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016056007A JP6596371B2 (ja) | 2016-03-18 | 2016-03-18 | 基板保持装置および基板処理装置 |
TW105142836A TWI625817B (zh) | 2016-03-18 | 2016-12-23 | Substrate holding device and substrate processing device |
KR1020170015616A KR101946701B1 (ko) | 2016-03-18 | 2017-02-03 | 기판 유지 장치 및 기판 처리 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016056007A JP6596371B2 (ja) | 2016-03-18 | 2016-03-18 | 基板保持装置および基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017174855A true JP2017174855A (ja) | 2017-09-28 |
JP6596371B2 JP6596371B2 (ja) | 2019-10-23 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2016056007A Active JP6596371B2 (ja) | 2016-03-18 | 2016-03-18 | 基板保持装置および基板処理装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6596371B2 (ja) |
KR (1) | KR101946701B1 (ja) |
TW (1) | TWI625817B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019220851A (ja) * | 2018-06-20 | 2019-12-26 | キヤノン株式会社 | 電子機器 |
WO2023114410A1 (en) * | 2021-12-16 | 2023-06-22 | Applied Materials, Inc. | Substrate support gap pumping to prevent glow discharge and light-up |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2023121462A (ja) * | 2022-02-21 | 2023-08-31 | 株式会社Screenホールディングス | 基板保持装置および基板処理システム |
Citations (4)
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JPH0786247A (ja) * | 1993-09-16 | 1995-03-31 | Hitachi Ltd | 減圧雰囲気内における被処理物の処理方法及び処理装置 |
JP2007258439A (ja) * | 2006-03-23 | 2007-10-04 | Dainippon Screen Mfg Co Ltd | 熱処理プレート |
JP2008098575A (ja) * | 2006-10-16 | 2008-04-24 | Ntn Corp | チャックステージおよびそれを用いたパターン修正装置 |
JP2012186429A (ja) * | 2011-03-08 | 2012-09-27 | Mitsubishi Electric Corp | 基板処理装置と該基板処理装置を用いた基板処理方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000100895A (ja) * | 1998-09-18 | 2000-04-07 | Nikon Corp | 基板の搬送装置、基板の保持装置、及び基板処理装置 |
JP4410063B2 (ja) * | 2004-09-06 | 2010-02-03 | 東京エレクトロン株式会社 | 基板処理装置 |
JP4827569B2 (ja) * | 2006-03-23 | 2011-11-30 | 大日本スクリーン製造株式会社 | 基板支持構造とこれを用いた熱処理装置と基板支持構造に用いられるシート状物と基板支持構造の製造方法 |
JP4712614B2 (ja) | 2006-05-29 | 2011-06-29 | 株式会社アルバック | 真空処理装置 |
KR101494924B1 (ko) * | 2009-10-16 | 2015-02-23 | 도쿄엘렉트론가부시키가이샤 | 감압건조장치 및 감압건조방법 |
-
2016
- 2016-03-18 JP JP2016056007A patent/JP6596371B2/ja active Active
- 2016-12-23 TW TW105142836A patent/TWI625817B/zh active
-
2017
- 2017-02-03 KR KR1020170015616A patent/KR101946701B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0786247A (ja) * | 1993-09-16 | 1995-03-31 | Hitachi Ltd | 減圧雰囲気内における被処理物の処理方法及び処理装置 |
JP2007258439A (ja) * | 2006-03-23 | 2007-10-04 | Dainippon Screen Mfg Co Ltd | 熱処理プレート |
JP2008098575A (ja) * | 2006-10-16 | 2008-04-24 | Ntn Corp | チャックステージおよびそれを用いたパターン修正装置 |
JP2012186429A (ja) * | 2011-03-08 | 2012-09-27 | Mitsubishi Electric Corp | 基板処理装置と該基板処理装置を用いた基板処理方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019220851A (ja) * | 2018-06-20 | 2019-12-26 | キヤノン株式会社 | 電子機器 |
JP7130457B2 (ja) | 2018-06-20 | 2022-09-05 | キヤノン株式会社 | 電子機器 |
WO2023114410A1 (en) * | 2021-12-16 | 2023-06-22 | Applied Materials, Inc. | Substrate support gap pumping to prevent glow discharge and light-up |
Also Published As
Publication number | Publication date |
---|---|
TW201735228A (zh) | 2017-10-01 |
KR101946701B1 (ko) | 2019-02-11 |
TWI625817B (zh) | 2018-06-01 |
KR20170108807A (ko) | 2017-09-27 |
JP6596371B2 (ja) | 2019-10-23 |
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