JP2017159314A - はんだ合金、はんだボール、チップソルダ、はんだペースト及びはんだ継手 - Google Patents
はんだ合金、はんだボール、チップソルダ、はんだペースト及びはんだ継手 Download PDFInfo
- Publication number
- JP2017159314A JP2017159314A JP2016044779A JP2016044779A JP2017159314A JP 2017159314 A JP2017159314 A JP 2017159314A JP 2016044779 A JP2016044779 A JP 2016044779A JP 2016044779 A JP2016044779 A JP 2016044779A JP 2017159314 A JP2017159314 A JP 2017159314A
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- Prior art keywords
- mass
- solder
- oxide
- solder alloy
- discoloration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910000679 solder Inorganic materials 0.000 title claims abstract description 188
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 108
- 239000000956 alloy Substances 0.000 title claims abstract description 108
- 229910052738 indium Inorganic materials 0.000 claims description 15
- 229910052787 antimony Inorganic materials 0.000 claims description 12
- 229910052698 phosphorus Inorganic materials 0.000 claims description 12
- 229910052733 gallium Inorganic materials 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- 229910052797 bismuth Inorganic materials 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 abstract description 82
- 229910052732 germanium Inorganic materials 0.000 abstract description 79
- 238000002845 discoloration Methods 0.000 abstract description 61
- 230000000694 effects Effects 0.000 abstract description 29
- 229910052718 tin Inorganic materials 0.000 abstract description 16
- 230000015572 biosynthetic process Effects 0.000 abstract description 10
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 238000004649 discoloration prevention Methods 0.000 abstract description 5
- 230000001629 suppression Effects 0.000 abstract description 2
- 230000000052 comparative effect Effects 0.000 description 35
- 230000004927 fusion Effects 0.000 description 26
- 229910052709 silver Inorganic materials 0.000 description 26
- 229910052802 copper Inorganic materials 0.000 description 22
- 230000003405 preventing effect Effects 0.000 description 18
- 229910052760 oxygen Inorganic materials 0.000 description 13
- 238000003860 storage Methods 0.000 description 12
- 238000009826 distribution Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000005476 soldering Methods 0.000 description 7
- 230000004907 flux Effects 0.000 description 6
- 238000005304 joining Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
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- 230000003247 decreasing effect Effects 0.000 description 3
- 238000012795 verification Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910017692 Ag3Sn Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
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- 230000007613 environmental effect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
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- 238000005096 rolling process Methods 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
- B23K35/025—Pastes, creams, slurries
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C13/00—Alloys based on tin
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- H—ELECTRICITY
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3463—Solder compositions in relation to features of the printed circuit board or the mounting process
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3485—Applying solder paste, slurry or powder
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- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
- H01L2224/11334—Manufacturing methods by local deposition of the material of the bump connector in solid form using preformed bumps
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- H01L2224/13013—Shape in top view being rectangular or square
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- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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- H01L2224/13299—Base material
- H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/13301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3478—Applying solder preforms; Transferring prefabricated solder patterns
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Powder Metallurgy (AREA)
Abstract
Description
P、Gaからなる群から選択される少なくとも1種の合計の含有量とは、これらの元素の群から選択される元素が1種であれば単体の含有量、2種であれば含有量の合計であり、0.002質量%以上0.1質量%以下とする。より好ましくは0.003質量%以上0.01質量%以下である。
Ni、Co、Feからなる群から選択される少なくとも1種の合計の含有量とは、これらの元素の群から選択される元素が1種であれば単体の含有量、2種以上であれば含有量の合計であり、0.005質量%以上0.3質量%以下とする。より好ましくは0.01質量%以上0.05質量%以下である。
Bi、In、Sbからなる群から選択される少なくとも1種の合計の含有量とは、これらの元素の群から選択される元素が1種であれば単体の含有量、2種以上であれば含有量の合計であり、0.1質量%以上10質量%以下とする。より好ましくは0.5質量%以上5.0質量%以下であり、特に好ましくは0.8質量%以上4.5質量%以下である。
MnとGeを含むSn系のはんだ合金では、酸化物生成の初期状態においては、空気中のO2とはんだ合金中のSn、Mn及びGeが反応して、はんだ合金の表面にSn酸化物(SnOX)とMn酸化物(MnaOy)及びGe酸化物(GeOz)による酸化膜が生成される。
MnとGeを含まないSn系のはんだ合金では、酸化物生成の初期状態においては、空気中のO2とはんだ合金中のSnが反応して、はんだ合金の表面にSn酸化物(SnOX)による酸化膜が生成される。
Mnを含みGeを含まないSn系のはんだ合金では、酸化物生成の初期状態においては、空気中のO2とはんだ合金中のSn及びMnが反応して、はんだ合金の表面にSn酸化物(SnOX)とMn酸化物(MnaOy)による酸化膜が生成される。
Geを含みMnを含まないSn系のはんだ合金では、酸化物生成の初期状態においては、空気中のO2とはんだ合金中のSn及びGeが反応して、はんだ合金の表面にSn酸化物(SnOX)とGe酸化物(GeOz)による酸化膜が生成される。
以下の表1に示す組成で実施例のはんだ合金を調合し、表2に示す組成で比較例のはんだ合金を調合し、表3に示す組成で参考例のはんだ合金を調合して、変色防止効果について検証した。なお、表1、表2及び表3における組成率は質量%である。
調合したはんだ合金を鋳造、圧延して板材を作成した。この板材を小片状(2mm(縦)×2mm(横)×0.1mm(厚み))に打ち抜きして試料を作成した。
以上のように作成された実施例と比較例及び参考例の各試料を高温環境及び高温高湿環境に保管して、変色の有無を確認した。保管条件は、高温高湿環境では、温度125℃、湿度100%RHで試料を24時間置いた。高温放置では、温度150℃で試料を7日間放置した。変色の確認は、KEYENCE製DESITAL MICROSCOPE VHX−500Fを使用して行った。確認の結果、変色が全く見られなかったものを◎、若干の光沢の変化が確認されたものを○、やや変色が見られたものを△、変色したものを×と評価した。
次に、上述した表1に示す高温高湿環境及び高温放置環境での変色防止効果を検証した実施例のはんだ合金について、酸化膜中でのSn酸化物、Mn酸化物及びGe酸化物の分布について検証した。
上述した表1、表2及び表3に示す高温高湿環境及び高温放置環境での変色防止効果を検証した各実施例と比較例及び参考例のはんだ合金について、融合性を検証した。検証方法は、各実施例と比較例及び参考例の組成で調合したはんだ合金を鋳造、圧延したものを、打ち抜きして小片状の部材(2mm(縦)×2mm(横)×0.1mm(厚み))を作成した。この小片を所定の大きさの板状に成形し、フラックスを塗布したOSP(水溶性プリフラックス(Organic Solderability Presevation)処理が施されたCu板上に置き、リフローを行った後、表面を洗浄し、温度125℃、湿度100%RHの環境に24時間置いた。さらに、Agが3.0質量%、Cuが0,5質量%、残部がSnからなるはんだ合金(Sn−3.0Ag−0.5Cu)を用いて作製したはんだボール(本例の場合、直径300μm)を、小片部材と同様に温度125℃、湿度100%RHの環境に24時間置いた。次に、実施例と比較例及び参考例のはんだ合金からなる試料上にフラックスを塗布し、はんだボールを所定個数置いた。本例では、はんだボールの数は9個とし、それぞれ5枚用意した。そして、リフローを行った後、未融合のはんだボールの数を計数して、融合不良発生率を算出した。未融合とは、Cu板とはんだボールが接合されていない状態をいう。
上述した表1、表2及び表3に示す高温高湿環境及び高温放置環境での変色防止効果を検証した各実施例と比較例及び参考例のはんだ合金について、濡れ性を検証した。検証方法は、各実施例と比較例及び参考例の組成で調合したはんだ合金を鋳造、圧延したものを、打ち抜きして小片状の部材(2mm(縦)×2mm(横)×0.1mm(厚み))を作成した。この小片を温度125℃、湿度100%RHの環境に24時間置いた。次に、OSP処理されたCu板と、Cu板にNiめっきし、このNiめっきにさらにAuめっきしたNi/Auめっき板の各板の上にフラックスを塗布し、高温高湿処理した小片を載せリフローを行った。はんだ合金の濡れ広がった面積を測定し、OSP処理されたCu板では5.0mm2、Ni/Auめっき板では11.0mm2以上に広がったものを合格とした。
図2は、本発明のはんだ合金の適用例を示す構成図である。Snを主成分とし、Mnを0.005質量%以上0.1質量%以下、Geを0.001質量%以上0.1質量%以下、更に、Agを0質量%超4質量%以下、または、Cuを0質量%超1質量%以下で含むはんだ合金は、球状のはんだボール10としても良い。はんだボール10の直径は、1〜1000μmであることが好ましい。この範囲にあると、球状のはんだボールを安定して製造でき、また、端子間が狭ピッチである場合の接続短絡を抑制することができる。ここで、はんだボールの直径が1〜50μm程度である場合、「はんだボール」の集合体は「はんだパウダ」と称されてもよい。
Claims (12)
- Mnを0.005質量%以上0.1質量%以下、Geを0.001質量%以上0.1質量%以下、更に、Agを0質量%超4質量%以下、または、Cuを0質量%超1質量%以下で含み、残部をSnとした
ことを特徴とするはんだ合金。 - Mnの量をGeの量以下とした
ことを特徴とする請求項1に記載のはんだ合金。 - 更に、P、Gaからなる群から選択される少なくとも1種を合計で0.002質量%以上0.1質量%以下とした
ことを特徴とする請求項1または2に記載のはんだ合金。 - 更に、Ni、Co、Feからなる群から選択される少なくとも1種を合計で0.005質量%以上0.3質量%以下とした
ことを特徴とする請求項1〜3のいずれか1項に記載のはんだ合金。 - 更に、Bi、In、Sbからなる群から選択される少なくとも1種を合計で0.1質量%以上10質量%以下とした
ことを特徴とする請求項1〜4のいずれか1項に記載のはんだ合金。 - 請求項1〜5のいずれか1項に記載のはんだ合金を使用した
ことを特徴とするはんだボール。 - 請求項1〜5のいずれか1項に記載のはんだ合金を使用した
ことを特徴とするチップソルダ。 - 請求項1〜5のいずれか1項に記載のはんだ合金を使用した
ことを特徴とするはんだペースト。 - 請求項1〜5のいずれか1項に記載のはんだ合金を使用した
ことを特徴とするはんだ継手。 - 請求項6に記載のはんだボールを使用した
ことを特徴とするはんだ継手。 - 請求項7に記載のチップソルダを使用した
ことを特徴とするはんだ継手。 - 請求項8に記載のはんだペーストを使用した
ことを特徴とするはんだ継手。
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BR112018068106-7A BR112018068106B1 (pt) | 2016-03-08 | 2017-03-08 | Liga de solda, esfera de solda, solda de chip e junta de solda |
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CN108712940B (zh) | 2019-09-24 |
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US20190070696A1 (en) | 2019-03-07 |
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KR101976343B1 (ko) | 2019-05-07 |
JP6374424B2 (ja) | 2018-08-15 |
MY175560A (en) | 2020-07-01 |
BR112018068106A2 (pt) | 2019-04-09 |
PH12018501922A1 (en) | 2019-06-17 |
MX2018010712A (es) | 2019-01-24 |
EP3427888B1 (en) | 2024-04-24 |
CA3017098C (en) | 2019-10-08 |
EP3427888A1 (en) | 2019-01-16 |
TWI629364B (zh) | 2018-07-11 |
TW201804001A (zh) | 2018-02-01 |
BR112018068106A8 (pt) | 2022-05-31 |
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