JP2017150084A - アルミニウムからなる金属化基板の製造方法 - Google Patents
アルミニウムからなる金属化基板の製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 65
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 29
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 238000010304 firing Methods 0.000 claims abstract description 104
- 238000000034 method Methods 0.000 claims abstract description 62
- 238000001816 cooling Methods 0.000 claims abstract description 18
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 7
- 230000008569 process Effects 0.000 claims description 15
- 239000011521 glass Substances 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 239000000843 powder Substances 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000001354 calcination Methods 0.000 claims description 8
- 238000007650 screen-printing Methods 0.000 claims description 8
- 239000012298 atmosphere Substances 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 239000011230 binding agent Substances 0.000 claims description 6
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- 229910020617 PbO—B2O3—SiO2 Inorganic materials 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 13
- 238000005476 soldering Methods 0.000 description 11
- 238000005245 sintering Methods 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 238000004026 adhesive bonding Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000001680 brushing effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum-silver Chemical compound 0.000 description 1
- 239000006258 conductive agent Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007602 hot air drying Methods 0.000 description 1
- 238000007603 infrared drying Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 235000011837 pasties Nutrition 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
- B05D3/0209—Multistage baking
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- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
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- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/32—Processes for applying liquids or other fluent materials using means for protecting parts of a surface not to be coated, e.g. using stencils, resists
- B05D1/322—Removable films used as masks
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- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/12—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by mechanical means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C24/00—Coating starting from inorganic powder
- C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0016—Apparatus or processes specially adapted for manufacturing conductors or cables for heat treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1216—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by screen printing or stencil printing
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1283—After-treatment of the printed patterns, e.g. sintering or curing methods
- H05K3/1291—Firing or sintering at relative high temperatures for patterns on inorganic boards, e.g. co-firing of circuits on green ceramic sheets
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
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Abstract
【解決手段】導電ペースト3が基板1の表面2の少なくとも幾らかの領域に塗布される。第1の焼成段階(B1)において、導電ペーストがほぼ連続的に上昇する焼成温度に曝され、その焼成温度は約660℃未満の設定可能な最高焼成温度に上昇され、第2の焼成段階(B2)において、導電ペーストは設定可能な時間、前記の設定可能な最高焼成温度に実質的に曝される。冷却段階において、導電ペーストは冷却される。後処理段階において、導電ペーストの表面4は、好適にはブラシ処理によって機械的に後処理される基板表面2のはんた付けを可能にする方法。
【選択図】図1
Description
3 導電ペースト
図2中の横軸の”t/min”は「時間/分」を意味する。
(項目1)
金属化基板(1)の製造方法であって、該基板(1)は、少なくとも部分的に、好ましくは全体的に、アルミニウムおよび/またはアルミニウム合金を含んでなる、方法において、
導電ペースト(3)が前記基板(1)の表面(2)に少なくとも領域的に塗布され、
第1の焼成段階(B1)において、前記導電ペースト(3)は、ほぼ連続的に上昇する焼成温度(T)に曝され、ここで該焼成温度(T)は約660℃未満の設定可能な最高焼成温度(Tmax)に上昇され、
第2の焼成段階(B2)において、前記導電ペースト(3)は設定可能な時間(tB)、前記設定可能な最高焼成温度(Tmax)に実質的に曝され、
冷却段階(A)において、前記導電ペースト(3)は冷却され、そして、
後処理段階において、前記導電ペースト(3)の表面(4)は機械的に後処理され、好ましくはブラシ処理される、ことを特徴とする方法。
(項目2)
前記導電ペースト(3)は、スクリーン印刷プロセスによって前記基板(1)の表面(2)に塗布されることを特徴とする項目1に記載の方法。
(項目3)
銅粉末を含む前記導電ペースト(3)が使用されることを特徴とする項目1又は2に記載の方法。
(項目4)
PbO−B2O3−SiO2系のガラス、および/または、Bi2O3を含有するガラスを含む導電ペースト(3)が使用される、ことを特徴とする項目1〜3のいずれか一項に記載の方法。
(項目5)
前記第1の焼成段階(B1)に先立ち、前記導電ペースト(3)は、乾燥段階で、約80℃〜約200℃の温度、好ましくは100℃〜150℃の温度、特に好ましくは最高130℃の温度で、好適には約5分〜約20分間乾燥される、ことを特徴とする項目1〜4のいずれか一項に記載の方法。
(項目6)
前記第1の焼成段階(B1)および/または前記第2の焼成段階(B2)における前記導電ペースト(3)の少なくとも焼成は焼成炉内で実行され、前記焼成温度(T)が前記焼成炉内において支配的である、こと特徴とする項目1〜5のいずれか一項に記載の方法。
(項目7)
前記第1の焼成段階(B1)で前記焼成温度(T)は、少なくとも一時的に約40℃/分〜約60℃/分の上昇速度で上昇する、ことを特徴とする項目1〜6のいずれか一項に記載の方法。
(項目8)
前記第1の焼成段階(B1)で、前記焼成温度(T)は、約580℃の、好ましくは約565℃の、特に好ましくは約548℃の最高焼結温度(Tmax)に上昇される、ことを特徴とする項目1〜7のいずれか一項に記載の方法。
(項目9)
前記導電ペースト(3)の焼成が前記第2の焼成段階(B2)において約5分間〜約30分間実行される、ことを特徴とする項目1〜8のいずれか一項に記載の方法。
(項目10)
前記第2の焼成段階(B2)において前記設定可能な最高焼成温度(Tmax)はほぼ一定に保たれる、ことを特徴とする項目1〜9のいずれか一項に記載の方法。
(項目11)
前記第1の焼成段階(B1)および/または前記第2の焼成段階(B2)において前記導電ペースト(3)は、窒素を含んだ保護ガス雰囲気に曝される、ことを特徴とする項目1〜10のいずれか一項に記載の方法。
(項目12)
前記冷却段階(A)において、前記焼成温度(T)は少なくとも一時的に、約20℃/分〜約40℃/分の下降速度で、好ましくは約30℃/分の下降速度で低下される、ことを特徴とする項目1〜11のいずれか一項に記載の方法。
(項目13)
前記導電ペースト(3)が約10μm〜約100μmの厚みで前記基板(1)の表面(2)に塗布される、ことを特徴とする項目1〜12のいずれか一項に記載の方法。
Claims (17)
- 金属化基板(1)の製造方法であって、該基板(1)は、アルミニウムおよび/またはアルミニウム合金からなる、方法において、
金属粉末、無機粉末、有機結合剤および溶解剤を少なくとも含む導電ペースト(3)が、前記基板(1)の表面(2)に少なくとも領域的に塗布され、
第1の焼成段階(B1)において、前記導電ペースト(3)は、連続的に上昇する焼成温度(T)に曝され、ここで該焼成温度(T)は、少なくとも一時的に40℃/分〜60℃/分の上昇速度で、660℃未満の設定可能な最高焼成温度(Tmax)に上昇され、
第2の焼成段階(B2)において、前記導電ペースト(3)は設定可能な時間(tB)、前記設定可能な最高焼成温度(Tmax)に曝され、
冷却段階(A)において、前記導電ペースト(3)は冷却され、そして、
後処理段階において、前記導電ペースト(3)の表面(4)は機械的に後処理される、ことを特徴とする方法。 - 前記導電ペースト(3)は、スクリーン印刷プロセスによって前記基板(1)の表面(2)に塗布されることを特徴とする請求項1に記載の方法。
- 前記金属粉末としての銅粉末を含む前記導電ペースト(3)が使用され、かつ、設定可能な前記最高焼成温度(Tmax)が548℃であることを特徴とする請求項1又は2に記載の方法。
- 前記金属粉末としての銀粉末を含む前記導電ペースト(3)が使用され、かつ、設定可能な前記最高焼成温度(Tmax)が565℃であることを特徴とする請求項1又は2に記載の方法。
- 設定可能な前記最高焼成温度(Tmax)が580℃であることを特徴とする請求項1又は2に記載の方法。
- 前記無機粉末として、PbO−B2O3−SiO2系のガラス、および/または、Bi2O3を含有するガラスを含む導電ペースト(3)が使用される、ことを特徴とする請求項1〜5のいずれか一項に記載の方法。
- 前記第1の焼成段階(B1)に先立ち、前記導電ペースト(3)は、乾燥段階で、80℃〜200℃の温度乾燥される、ことを特徴とする請求項1〜6のいずれか一項に記載の方法。
- 前記第1の焼成段階(B1)に先立ち、前記導電ペースト(3)は、乾燥段階で、100℃〜150℃の温度で乾燥される、ことを特徴とする請求項7に記載の方法。
- 前記第1の焼成段階(B1)に先立ち、前記導電ペースト(3)は、5分間〜20分間乾燥される、ことを特徴とする請求項7又は8のいずれか一項に記載の方法。
- 前記第1の焼成段階(B1)および/または前記第2の焼成段階(B2)における前記導電ペースト(3)の少なくとも焼成は焼成炉内で実行され、前記焼成温度(T)が前記焼成炉内において支配的である、こと特徴とする請求項1〜9のいずれか一項に記載の方法。
- 前記導電ペースト(3)の焼成が前記第2の焼成段階(B2)において5分間〜30分間実行される、ことを特徴とする請求項1〜10のいずれか一項に記載の方法。
- 前記第2の焼成段階(B2)において前記設定可能な最高焼成温度(Tmax)は一定に保たれる、ことを特徴とする請求項1〜11のいずれか一項に記載の方法。
- 前記第1の焼成段階(B1)および/または前記第2の焼成段階(B2)において前記導電ペースト(3)は、窒素を含んだ保護ガス雰囲気に曝される、ことを特徴とする請求項1〜12のいずれか一項に記載の方法。
- 前記冷却段階(A)において、前記焼成温度(T)は少なくとも一時的に、20℃/分〜40℃/分の下降速度で低下される、ことを特徴とする請求項1〜13のいずれか一項に記載の方法。
- 前記冷却段階(A)において、前記焼成温度(T)は少なくとも一時的に、30℃/分の下降速度で低下される、ことを特徴とする請求項14に記載の方法。
- 前記導電ペースト(3)が10μm〜100μmの厚みで前記基板(1)の表面(2)に塗布される、ことを特徴とする請求項1〜15のいずれか一項に記載の方法。
- 前記後処理段階において、前記導電ペースト(3)の表面(4)がブラシ処理されることを特徴とする請求項1〜16のいずれか一項に記載の方法。
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