JP2017139443A5 - - Google Patents
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- Publication number
- JP2017139443A5 JP2017139443A5 JP2016210593A JP2016210593A JP2017139443A5 JP 2017139443 A5 JP2017139443 A5 JP 2017139443A5 JP 2016210593 A JP2016210593 A JP 2016210593A JP 2016210593 A JP2016210593 A JP 2016210593A JP 2017139443 A5 JP2017139443 A5 JP 2017139443A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- amine
- curing agent
- isocyanate
- initiated polyol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 claims description 49
- 239000012948 isocyanate Substances 0.000 claims description 34
- 150000002513 isocyanates Chemical class 0.000 claims description 34
- 150000001412 amines Chemical class 0.000 claims description 27
- 229920005862 polyol Polymers 0.000 claims description 25
- 150000003077 polyols Chemical class 0.000 claims description 25
- 239000003795 chemical substances by application Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 11
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 239000007795 chemical reaction product Substances 0.000 claims description 6
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000002002 slurry Substances 0.000 claims 4
- 239000007789 gas Substances 0.000 claims 3
- 239000002861 polymer material Substances 0.000 claims 3
- 239000000377 silicon dioxide Substances 0.000 claims 3
- 239000006061 abrasive grain Substances 0.000 claims 2
- 239000000853 adhesive Substances 0.000 claims 2
- 230000001070 adhesive effect Effects 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- MDYWVERMLMSYEC-UHFFFAOYSA-N N=C=O.N=C=O Chemical compound N=C=O.N=C=O MDYWVERMLMSYEC-UHFFFAOYSA-N 0.000 claims 1
- 229910003460 diamond Inorganic materials 0.000 claims 1
- 239000010432 diamond Substances 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000002195 soluble material Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/927,704 | 2015-10-30 | ||
| US14/927,704 US9484212B1 (en) | 2015-10-30 | 2015-10-30 | Chemical mechanical polishing method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017139443A JP2017139443A (ja) | 2017-08-10 |
| JP2017139443A5 true JP2017139443A5 (enExample) | 2019-11-21 |
| JP6849389B2 JP6849389B2 (ja) | 2021-03-24 |
Family
ID=57189269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016210593A Active JP6849389B2 (ja) | 2015-10-30 | 2016-10-27 | ケミカルメカニカルポリッシング方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9484212B1 (enExample) |
| JP (1) | JP6849389B2 (enExample) |
| KR (1) | KR20170054266A (enExample) |
| CN (1) | CN106625031A (enExample) |
| DE (1) | DE102016012533A1 (enExample) |
| FR (1) | FR3043001A1 (enExample) |
| TW (1) | TW201715016A (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180169827A1 (en) * | 2016-12-16 | 2018-06-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Methods for making chemical mechanical planarization (cmp) polishing pads having integral windows |
| CN106891246B (zh) * | 2017-03-30 | 2019-05-07 | 湖北鼎龙控股股份有限公司 | 一种用于半导体、光学材料和磁性材料表面平坦化的化学机械抛光垫 |
| JP2019050307A (ja) | 2017-09-11 | 2019-03-28 | 株式会社フジミインコーポレーテッド | 研磨方法、ならびに研磨用組成物およびその製造方法 |
| US10464187B2 (en) | 2017-12-01 | 2019-11-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High removal rate chemical mechanical polishing pads from amine initiated polyol containing curatives |
| US10569384B1 (en) * | 2018-11-06 | 2020-02-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad and polishing method |
| US10464188B1 (en) | 2018-11-06 | 2019-11-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad and polishing method |
| KR20210132204A (ko) * | 2019-03-25 | 2021-11-03 | 씨엠씨 머티리얼즈, 인코포레이티드 | Cmp 슬러리에 대한 입자 분산을 개선하는 첨가제 |
| US11772230B2 (en) | 2021-01-21 | 2023-10-03 | Rohm And Haas Electronic Materials Cmp Holdings Inc. | Formulations for high porosity chemical mechanical polishing pads with high hardness and CMP pads made therewith |
| KR102561824B1 (ko) | 2021-06-02 | 2023-07-31 | 에스케이엔펄스 주식회사 | 연마패드 및 이를 이용한 반도체 소자의 제조방법 |
| CN120206314B (zh) * | 2025-05-09 | 2025-09-05 | 河北同光半导体股份有限公司 | 一种大尺寸碳化硅衬底的化学机械抛光方法 |
Family Cites Families (49)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MY114512A (en) | 1992-08-19 | 2002-11-30 | Rodel Inc | Polymeric substrate with polymeric microelements |
| JP3925041B2 (ja) | 2000-05-31 | 2007-06-06 | Ｊｓｒ株式会社 | 研磨パッド用組成物及びこれを用いた研磨パッド |
| US6649523B2 (en) | 2000-09-29 | 2003-11-18 | Nutool, Inc. | Method and system to provide material removal and planarization employing a reactive pad |
| JP3826702B2 (ja) | 2000-10-24 | 2006-09-27 | Ｊｓｒ株式会社 | 研磨パッド用組成物及びこれを用いた研磨パッド |
| KR100877385B1 (ko) | 2001-11-13 | 2009-01-07 | 도요 고무 고교 가부시키가이샤 | 연마 패드 및 그 제조 방법 |
| JP4039214B2 (ja) | 2002-11-05 | 2008-01-30 | Ｊｓｒ株式会社 | 研磨パッド |
| US7704125B2 (en) | 2003-03-24 | 2010-04-27 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
| US20040224622A1 (en) | 2003-04-15 | 2004-11-11 | Jsr Corporation | Polishing pad and production method thereof |
| JP4475404B2 (ja) | 2004-10-14 | 2010-06-09 | Ｊｓｒ株式会社 | 研磨パッド |
| US7731864B2 (en) * | 2005-06-29 | 2010-06-08 | Intel Corporation | Slurry for chemical mechanical polishing of aluminum |
| CN101724167B (zh) | 2005-07-15 | 2013-06-26 | 东洋橡胶工业株式会社 | 层叠片及其制造方法 |
| US20070037491A1 (en) | 2005-08-12 | 2007-02-15 | Yuzhuo Li | Chemically modified chemical mechanical polishing pad, process of making a modified chemical mechanical polishing pad and method of chemical mechanical polishing |
| US7445847B2 (en) * | 2006-05-25 | 2008-11-04 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad |
| US7294576B1 (en) | 2006-06-29 | 2007-11-13 | Cabot Microelectronics Corporation | Tunable selectivity slurries in CMP applications |
| KR101181885B1 (ko) | 2006-09-08 | 2012-09-11 | 도요 고무 고교 가부시키가이샤 | 연마 패드 |
| US7438636B2 (en) * | 2006-12-21 | 2008-10-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad |
| CN102152232B (zh) | 2007-01-15 | 2013-06-26 | 东洋橡胶工业株式会社 | 研磨垫及其制造方法 |
| US7569268B2 (en) * | 2007-01-29 | 2009-08-04 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad |
| US7828634B2 (en) * | 2007-08-16 | 2010-11-09 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Interconnected-multi-element-lattice polishing pad |
| US20090062414A1 (en) | 2007-08-28 | 2009-03-05 | David Picheng Huang | System and method for producing damping polyurethane CMP pads |
| US8052507B2 (en) | 2007-11-20 | 2011-11-08 | Praxair Technology, Inc. | Damping polyurethane CMP pads with microfillers |
| JP4593643B2 (ja) | 2008-03-12 | 2010-12-08 | 東洋ゴム工業株式会社 | 研磨パッド |
| CN102015812B (zh) | 2008-04-25 | 2013-03-20 | 东洋高分子股份有限公司 | 聚氨酯发泡体和抛光垫 |
| US7820005B2 (en) * | 2008-07-18 | 2010-10-26 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Multilayer chemical mechanical polishing pad manufacturing process |
| JP5393434B2 (ja) | 2008-12-26 | 2014-01-22 | 東洋ゴム工業株式会社 | 研磨パッド及びその製造方法 |
| US8119529B2 (en) * | 2009-04-29 | 2012-02-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for chemical mechanical polishing a substrate |
| US8257544B2 (en) * | 2009-06-10 | 2012-09-04 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad having a low defect integral window |
| US8551201B2 (en) | 2009-08-07 | 2013-10-08 | Praxair S.T. Technology, Inc. | Polyurethane composition for CMP pads and method of manufacturing same |
| WO2011048889A1 (ja) * | 2009-10-22 | 2011-04-28 | 日立化成工業株式会社 | 研磨剤、濃縮１液式研磨剤、２液式研磨剤及び基板の研磨方法 |
| US8431490B2 (en) * | 2010-03-31 | 2013-04-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal |
| US9156124B2 (en) | 2010-07-08 | 2015-10-13 | Nexplanar Corporation | Soft polishing pad for polishing a semiconductor substrate |
| CN102601723B (zh) * | 2011-01-20 | 2014-03-12 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的研磨方法 |
| JP5789634B2 (ja) * | 2012-05-14 | 2015-10-07 | 株式会社荏原製作所 | ワークピースを研磨するための研磨パッド並びに化学機械研磨装置、および該化学機械研磨装置を用いてワークピースを研磨する方法 |
| US9144880B2 (en) | 2012-11-01 | 2015-09-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Soft and conditionable chemical mechanical polishing pad |
| US9238296B2 (en) * | 2013-05-31 | 2016-01-19 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Multilayer chemical mechanical polishing pad stack with soft and conditionable polishing layer |
| US9233451B2 (en) * | 2013-05-31 | 2016-01-12 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Soft and conditionable chemical mechanical polishing pad stack |
| US9238295B2 (en) * | 2013-05-31 | 2016-01-19 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Soft and conditionable chemical mechanical window polishing pad |
| US9102034B2 (en) * | 2013-08-30 | 2015-08-11 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of chemical mechanical polishing a substrate |
| US8980749B1 (en) * | 2013-10-24 | 2015-03-17 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for chemical mechanical polishing silicon wafers |
| US9127187B1 (en) | 2014-03-24 | 2015-09-08 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
| US9216489B2 (en) * | 2014-03-28 | 2015-12-22 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad with endpoint detection window |
| US9259820B2 (en) * | 2014-03-28 | 2016-02-16 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad with polishing layer and window |
| US9064806B1 (en) * | 2014-03-28 | 2015-06-23 | Rohm and Haas Electronics Materials CMP Holdings, Inc. | Soft and conditionable chemical mechanical polishing pad with window |
| US20150306731A1 (en) * | 2014-04-25 | 2015-10-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad |
| US9333620B2 (en) * | 2014-04-29 | 2016-05-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad with clear endpoint detection window |
| US9314897B2 (en) * | 2014-04-29 | 2016-04-19 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad with endpoint detection window |
| US20150375361A1 (en) * | 2014-06-25 | 2015-12-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method |
| US9259821B2 (en) * | 2014-06-25 | 2016-02-16 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing layer formulation with conditioning tolerance |
| US9481070B2 (en) * | 2014-12-19 | 2016-11-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High-stability polyurethane polishing pad |
-
2015
- 2015-10-30 US US14/927,704 patent/US9484212B1/en active Active
-
2016
- 2016-10-19 DE DE102016012533.0A patent/DE102016012533A1/de not_active Withdrawn
- 2016-10-25 TW TW105134452A patent/TW201715016A/zh unknown
- 2016-10-26 CN CN201610950906.9A patent/CN106625031A/zh active Pending
- 2016-10-27 JP JP2016210593A patent/JP6849389B2/ja active Active
- 2016-10-27 KR KR1020160141438A patent/KR20170054266A/ko not_active Withdrawn
- 2016-10-28 FR FR1660475A patent/FR3043001A1/fr not_active Ceased
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