FR3043001A1 - Procede de polissage mecano-chimique, tampon de polissage correspondant et son procede de production - Google Patents

Procede de polissage mecano-chimique, tampon de polissage correspondant et son procede de production Download PDF

Info

Publication number
FR3043001A1
FR3043001A1 FR1660475A FR1660475A FR3043001A1 FR 3043001 A1 FR3043001 A1 FR 3043001A1 FR 1660475 A FR1660475 A FR 1660475A FR 1660475 A FR1660475 A FR 1660475A FR 3043001 A1 FR3043001 A1 FR 3043001A1
Authority
FR
France
Prior art keywords
polishing
amine
curing agent
substrate
initiated polyol
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
FR1660475A
Other languages
English (en)
French (fr)
Inventor
Bainian Qian
Yi Guo
Marty W Degroot
George C Jacob
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Global Technologies LLC
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Dow Global Technologies LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Dow Global Technologies LLC filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of FR3043001A1 publication Critical patent/FR3043001A1/fr
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
    • B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B24B37/245—Pads with fixed abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • B24D11/001—Manufacture of flexible abrasive materials
    • B24D11/003—Manufacture of flexible abrasive materials without embedded abrasive particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
FR1660475A 2015-10-30 2016-10-28 Procede de polissage mecano-chimique, tampon de polissage correspondant et son procede de production Ceased FR3043001A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/927,704 US9484212B1 (en) 2015-10-30 2015-10-30 Chemical mechanical polishing method

Publications (1)

Publication Number Publication Date
FR3043001A1 true FR3043001A1 (fr) 2017-05-05

Family

ID=57189269

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1660475A Ceased FR3043001A1 (fr) 2015-10-30 2016-10-28 Procede de polissage mecano-chimique, tampon de polissage correspondant et son procede de production

Country Status (7)

Country Link
US (1) US9484212B1 (enExample)
JP (1) JP6849389B2 (enExample)
KR (1) KR20170054266A (enExample)
CN (1) CN106625031A (enExample)
DE (1) DE102016012533A1 (enExample)
FR (1) FR3043001A1 (enExample)
TW (1) TW201715016A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180169827A1 (en) * 2016-12-16 2018-06-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Methods for making chemical mechanical planarization (cmp) polishing pads having integral windows
CN106891246B (zh) * 2017-03-30 2019-05-07 湖北鼎龙控股股份有限公司 一种用于半导体、光学材料和磁性材料表面平坦化的化学机械抛光垫
JP2019050307A (ja) 2017-09-11 2019-03-28 株式会社フジミインコーポレーテッド 研磨方法、ならびに研磨用組成物およびその製造方法
US10464187B2 (en) 2017-12-01 2019-11-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High removal rate chemical mechanical polishing pads from amine initiated polyol containing curatives
US10569384B1 (en) * 2018-11-06 2020-02-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad and polishing method
US10464188B1 (en) 2018-11-06 2019-11-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad and polishing method
KR20210132204A (ko) * 2019-03-25 2021-11-03 씨엠씨 머티리얼즈, 인코포레이티드 Cmp 슬러리에 대한 입자 분산을 개선하는 첨가제
US11772230B2 (en) 2021-01-21 2023-10-03 Rohm And Haas Electronic Materials Cmp Holdings Inc. Formulations for high porosity chemical mechanical polishing pads with high hardness and CMP pads made therewith
KR102561824B1 (ko) 2021-06-02 2023-07-31 에스케이엔펄스 주식회사 연마패드 및 이를 이용한 반도체 소자의 제조방법
CN120206314B (zh) * 2025-05-09 2025-09-05 河北同光半导体股份有限公司 一种大尺寸碳化硅衬底的化学机械抛光方法

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MY114512A (en) 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
JP3925041B2 (ja) 2000-05-31 2007-06-06 Ｊｓｒ株式会社 研磨パッド用組成物及びこれを用いた研磨パッド
US6649523B2 (en) 2000-09-29 2003-11-18 Nutool, Inc. Method and system to provide material removal and planarization employing a reactive pad
JP3826702B2 (ja) 2000-10-24 2006-09-27 Ｊｓｒ株式会社 研磨パッド用組成物及びこれを用いた研磨パッド
KR100877385B1 (ko) 2001-11-13 2009-01-07 도요 고무 고교 가부시키가이샤 연마 패드 및 그 제조 방법
JP4039214B2 (ja) 2002-11-05 2008-01-30 Ｊｓｒ株式会社 研磨パッド
US7704125B2 (en) 2003-03-24 2010-04-27 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
US20040224622A1 (en) 2003-04-15 2004-11-11 Jsr Corporation Polishing pad and production method thereof
JP4475404B2 (ja) 2004-10-14 2010-06-09 Ｊｓｒ株式会社 研磨パッド
US7731864B2 (en) * 2005-06-29 2010-06-08 Intel Corporation Slurry for chemical mechanical polishing of aluminum
CN101724167B (zh) 2005-07-15 2013-06-26 东洋橡胶工业株式会社 层叠片及其制造方法
US20070037491A1 (en) 2005-08-12 2007-02-15 Yuzhuo Li Chemically modified chemical mechanical polishing pad, process of making a modified chemical mechanical polishing pad and method of chemical mechanical polishing
US7445847B2 (en) * 2006-05-25 2008-11-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US7294576B1 (en) 2006-06-29 2007-11-13 Cabot Microelectronics Corporation Tunable selectivity slurries in CMP applications
KR101181885B1 (ko) 2006-09-08 2012-09-11 도요 고무 고교 가부시키가이샤 연마 패드
US7438636B2 (en) * 2006-12-21 2008-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
CN102152232B (zh) 2007-01-15 2013-06-26 东洋橡胶工业株式会社 研磨垫及其制造方法
US7569268B2 (en) * 2007-01-29 2009-08-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US7828634B2 (en) * 2007-08-16 2010-11-09 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Interconnected-multi-element-lattice polishing pad
US20090062414A1 (en) 2007-08-28 2009-03-05 David Picheng Huang System and method for producing damping polyurethane CMP pads
US8052507B2 (en) 2007-11-20 2011-11-08 Praxair Technology, Inc. Damping polyurethane CMP pads with microfillers
JP4593643B2 (ja) 2008-03-12 2010-12-08 東洋ゴム工業株式会社 研磨パッド
CN102015812B (zh) 2008-04-25 2013-03-20 东洋高分子股份有限公司 聚氨酯发泡体和抛光垫
US7820005B2 (en) * 2008-07-18 2010-10-26 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multilayer chemical mechanical polishing pad manufacturing process
JP5393434B2 (ja) 2008-12-26 2014-01-22 東洋ゴム工業株式会社 研磨パッド及びその製造方法
US8119529B2 (en) * 2009-04-29 2012-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing a substrate
US8257544B2 (en) * 2009-06-10 2012-09-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad having a low defect integral window
US8551201B2 (en) 2009-08-07 2013-10-08 Praxair S.T. Technology, Inc. Polyurethane composition for CMP pads and method of manufacturing same
WO2011048889A1 (ja) * 2009-10-22 2011-04-28 日立化成工業株式会社 研磨剤、濃縮１液式研磨剤、２液式研磨剤及び基板の研磨方法
US8431490B2 (en) * 2010-03-31 2013-04-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal
US9156124B2 (en) 2010-07-08 2015-10-13 Nexplanar Corporation Soft polishing pad for polishing a semiconductor substrate
CN102601723B (zh) * 2011-01-20 2014-03-12 中芯国际集成电路制造(上海)有限公司 一种半导体器件的研磨方法
JP5789634B2 (ja) * 2012-05-14 2015-10-07 株式会社荏原製作所 ワークピースを研磨するための研磨パッド並びに化学機械研磨装置、および該化学機械研磨装置を用いてワークピースを研磨する方法
US9144880B2 (en) 2012-11-01 2015-09-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Soft and conditionable chemical mechanical polishing pad
US9238296B2 (en) * 2013-05-31 2016-01-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multilayer chemical mechanical polishing pad stack with soft and conditionable polishing layer
US9233451B2 (en) * 2013-05-31 2016-01-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Soft and conditionable chemical mechanical polishing pad stack
US9238295B2 (en) * 2013-05-31 2016-01-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Soft and conditionable chemical mechanical window polishing pad
US9102034B2 (en) * 2013-08-30 2015-08-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate
US8980749B1 (en) * 2013-10-24 2015-03-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing silicon wafers
US9127187B1 (en) 2014-03-24 2015-09-08 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
US9216489B2 (en) * 2014-03-28 2015-12-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with endpoint detection window
US9259820B2 (en) * 2014-03-28 2016-02-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with polishing layer and window
US9064806B1 (en) * 2014-03-28 2015-06-23 Rohm and Haas Electronics Materials CMP Holdings, Inc. Soft and conditionable chemical mechanical polishing pad with window
US20150306731A1 (en) * 2014-04-25 2015-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US9333620B2 (en) * 2014-04-29 2016-05-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with clear endpoint detection window
US9314897B2 (en) * 2014-04-29 2016-04-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with endpoint detection window
US20150375361A1 (en) * 2014-06-25 2015-12-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
US9259821B2 (en) * 2014-06-25 2016-02-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing layer formulation with conditioning tolerance
US9481070B2 (en) * 2014-12-19 2016-11-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-stability polyurethane polishing pad

Also Published As

Publication number Publication date
US9484212B1 (en) 2016-11-01
JP2017139443A (ja) 2017-08-10
TW201715016A (zh) 2017-05-01
CN106625031A (zh) 2017-05-10
DE102016012533A1 (de) 2017-05-04
KR20170054266A (ko) 2017-05-17
JP6849389B2 (ja) 2021-03-24

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