DE102016012533A1 - Chemisch-mechanisches Polierverfahren - Google Patents
Chemisch-mechanisches Polierverfahren Download PDFInfo
- Publication number
- DE102016012533A1 DE102016012533A1 DE102016012533.0A DE102016012533A DE102016012533A1 DE 102016012533 A1 DE102016012533 A1 DE 102016012533A1 DE 102016012533 A DE102016012533 A DE 102016012533A DE 102016012533 A1 DE102016012533 A1 DE 102016012533A1
- Authority
- DE
- Germany
- Prior art keywords
- polishing
- amine
- curing agent
- substrate
- initiated polyol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
- B24B37/245—Pads with fixed abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
- B24D11/001—Manufacture of flexible abrasive materials
- B24D11/003—Manufacture of flexible abrasive materials without embedded abrasive particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/06—Planarisation of inorganic insulating materials
- H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/927,704 | 2015-10-30 | ||
| US14/927,704 US9484212B1 (en) | 2015-10-30 | 2015-10-30 | Chemical mechanical polishing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102016012533A1 true DE102016012533A1 (de) | 2017-05-04 |
Family
ID=57189269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102016012533.0A Withdrawn DE102016012533A1 (de) | 2015-10-30 | 2016-10-19 | Chemisch-mechanisches Polierverfahren |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9484212B1 (enExample) |
| JP (1) | JP6849389B2 (enExample) |
| KR (1) | KR20170054266A (enExample) |
| CN (1) | CN106625031A (enExample) |
| DE (1) | DE102016012533A1 (enExample) |
| FR (1) | FR3043001A1 (enExample) |
| TW (1) | TW201715016A (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180169827A1 (en) * | 2016-12-16 | 2018-06-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Methods for making chemical mechanical planarization (cmp) polishing pads having integral windows |
| CN106891246B (zh) * | 2017-03-30 | 2019-05-07 | 湖北鼎龙控股股份有限公司 | 一种用于半导体、光学材料和磁性材料表面平坦化的化学机械抛光垫 |
| JP2019050307A (ja) | 2017-09-11 | 2019-03-28 | 株式会社フジミインコーポレーテッド | 研磨方法、ならびに研磨用組成物およびその製造方法 |
| US10464187B2 (en) | 2017-12-01 | 2019-11-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High removal rate chemical mechanical polishing pads from amine initiated polyol containing curatives |
| US10569384B1 (en) * | 2018-11-06 | 2020-02-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad and polishing method |
| US10464188B1 (en) | 2018-11-06 | 2019-11-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad and polishing method |
| KR20210132204A (ko) * | 2019-03-25 | 2021-11-03 | 씨엠씨 머티리얼즈, 인코포레이티드 | Cmp 슬러리에 대한 입자 분산을 개선하는 첨가제 |
| US11772230B2 (en) | 2021-01-21 | 2023-10-03 | Rohm And Haas Electronic Materials Cmp Holdings Inc. | Formulations for high porosity chemical mechanical polishing pads with high hardness and CMP pads made therewith |
| KR102561824B1 (ko) | 2021-06-02 | 2023-07-31 | 에스케이엔펄스 주식회사 | 연마패드 및 이를 이용한 반도체 소자의 제조방법 |
| CN120206314B (zh) * | 2025-05-09 | 2025-09-05 | 河北同光半导体股份有限公司 | 一种大尺寸碳化硅衬底的化学机械抛光方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7294576B1 (en) | 2006-06-29 | 2007-11-13 | Cabot Microelectronics Corporation | Tunable selectivity slurries in CMP applications |
Family Cites Families (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MY114512A (en) | 1992-08-19 | 2002-11-30 | Rodel Inc | Polymeric substrate with polymeric microelements |
| JP3925041B2 (ja) | 2000-05-31 | 2007-06-06 | Jsr株式会社 | 研磨パッド用組成物及びこれを用いた研磨パッド |
| US6649523B2 (en) | 2000-09-29 | 2003-11-18 | Nutool, Inc. | Method and system to provide material removal and planarization employing a reactive pad |
| JP3826702B2 (ja) | 2000-10-24 | 2006-09-27 | Jsr株式会社 | 研磨パッド用組成物及びこれを用いた研磨パッド |
| KR100877385B1 (ko) | 2001-11-13 | 2009-01-07 | 도요 고무 고교 가부시키가이샤 | 연마 패드 및 그 제조 방법 |
| JP4039214B2 (ja) | 2002-11-05 | 2008-01-30 | Jsr株式会社 | 研磨パッド |
| US7704125B2 (en) | 2003-03-24 | 2010-04-27 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
| US20040224622A1 (en) | 2003-04-15 | 2004-11-11 | Jsr Corporation | Polishing pad and production method thereof |
| JP4475404B2 (ja) | 2004-10-14 | 2010-06-09 | Jsr株式会社 | 研磨パッド |
| US7731864B2 (en) * | 2005-06-29 | 2010-06-08 | Intel Corporation | Slurry for chemical mechanical polishing of aluminum |
| CN101724167B (zh) | 2005-07-15 | 2013-06-26 | 东洋橡胶工业株式会社 | 层叠片及其制造方法 |
| US20070037491A1 (en) | 2005-08-12 | 2007-02-15 | Yuzhuo Li | Chemically modified chemical mechanical polishing pad, process of making a modified chemical mechanical polishing pad and method of chemical mechanical polishing |
| US7445847B2 (en) * | 2006-05-25 | 2008-11-04 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad |
| KR101181885B1 (ko) | 2006-09-08 | 2012-09-11 | 도요 고무 고교 가부시키가이샤 | 연마 패드 |
| US7438636B2 (en) * | 2006-12-21 | 2008-10-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad |
| CN102152232B (zh) | 2007-01-15 | 2013-06-26 | 东洋橡胶工业株式会社 | 研磨垫及其制造方法 |
| US7569268B2 (en) * | 2007-01-29 | 2009-08-04 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad |
| US7828634B2 (en) * | 2007-08-16 | 2010-11-09 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Interconnected-multi-element-lattice polishing pad |
| US20090062414A1 (en) | 2007-08-28 | 2009-03-05 | David Picheng Huang | System and method for producing damping polyurethane CMP pads |
| US8052507B2 (en) | 2007-11-20 | 2011-11-08 | Praxair Technology, Inc. | Damping polyurethane CMP pads with microfillers |
| JP4593643B2 (ja) | 2008-03-12 | 2010-12-08 | 東洋ゴム工業株式会社 | 研磨パッド |
| CN102015812B (zh) | 2008-04-25 | 2013-03-20 | 东洋高分子股份有限公司 | 聚氨酯发泡体和抛光垫 |
| US7820005B2 (en) * | 2008-07-18 | 2010-10-26 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Multilayer chemical mechanical polishing pad manufacturing process |
| JP5393434B2 (ja) | 2008-12-26 | 2014-01-22 | 東洋ゴム工業株式会社 | 研磨パッド及びその製造方法 |
| US8119529B2 (en) * | 2009-04-29 | 2012-02-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for chemical mechanical polishing a substrate |
| US8257544B2 (en) * | 2009-06-10 | 2012-09-04 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad having a low defect integral window |
| US8551201B2 (en) | 2009-08-07 | 2013-10-08 | Praxair S.T. Technology, Inc. | Polyurethane composition for CMP pads and method of manufacturing same |
| WO2011048889A1 (ja) * | 2009-10-22 | 2011-04-28 | 日立化成工業株式会社 | 研磨剤、濃縮1液式研磨剤、2液式研磨剤及び基板の研磨方法 |
| US8431490B2 (en) * | 2010-03-31 | 2013-04-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal |
| US9156124B2 (en) | 2010-07-08 | 2015-10-13 | Nexplanar Corporation | Soft polishing pad for polishing a semiconductor substrate |
| CN102601723B (zh) * | 2011-01-20 | 2014-03-12 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的研磨方法 |
| JP5789634B2 (ja) * | 2012-05-14 | 2015-10-07 | 株式会社荏原製作所 | ワークピースを研磨するための研磨パッド並びに化学機械研磨装置、および該化学機械研磨装置を用いてワークピースを研磨する方法 |
| US9144880B2 (en) | 2012-11-01 | 2015-09-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Soft and conditionable chemical mechanical polishing pad |
| US9238296B2 (en) * | 2013-05-31 | 2016-01-19 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Multilayer chemical mechanical polishing pad stack with soft and conditionable polishing layer |
| US9233451B2 (en) * | 2013-05-31 | 2016-01-12 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Soft and conditionable chemical mechanical polishing pad stack |
| US9238295B2 (en) * | 2013-05-31 | 2016-01-19 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Soft and conditionable chemical mechanical window polishing pad |
| US9102034B2 (en) * | 2013-08-30 | 2015-08-11 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of chemical mechanical polishing a substrate |
| US8980749B1 (en) * | 2013-10-24 | 2015-03-17 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for chemical mechanical polishing silicon wafers |
| US9127187B1 (en) | 2014-03-24 | 2015-09-08 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
| US9216489B2 (en) * | 2014-03-28 | 2015-12-22 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad with endpoint detection window |
| US9259820B2 (en) * | 2014-03-28 | 2016-02-16 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad with polishing layer and window |
| US9064806B1 (en) * | 2014-03-28 | 2015-06-23 | Rohm and Haas Electronics Materials CMP Holdings, Inc. | Soft and conditionable chemical mechanical polishing pad with window |
| US20150306731A1 (en) * | 2014-04-25 | 2015-10-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad |
| US9333620B2 (en) * | 2014-04-29 | 2016-05-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad with clear endpoint detection window |
| US9314897B2 (en) * | 2014-04-29 | 2016-04-19 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad with endpoint detection window |
| US20150375361A1 (en) * | 2014-06-25 | 2015-12-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method |
| US9259821B2 (en) * | 2014-06-25 | 2016-02-16 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing layer formulation with conditioning tolerance |
| US9481070B2 (en) * | 2014-12-19 | 2016-11-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High-stability polyurethane polishing pad |
-
2015
- 2015-10-30 US US14/927,704 patent/US9484212B1/en active Active
-
2016
- 2016-10-19 DE DE102016012533.0A patent/DE102016012533A1/de not_active Withdrawn
- 2016-10-25 TW TW105134452A patent/TW201715016A/zh unknown
- 2016-10-26 CN CN201610950906.9A patent/CN106625031A/zh active Pending
- 2016-10-27 JP JP2016210593A patent/JP6849389B2/ja active Active
- 2016-10-27 KR KR1020160141438A patent/KR20170054266A/ko not_active Withdrawn
- 2016-10-28 FR FR1660475A patent/FR3043001A1/fr not_active Ceased
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7294576B1 (en) | 2006-06-29 | 2007-11-13 | Cabot Microelectronics Corporation | Tunable selectivity slurries in CMP applications |
Non-Patent Citations (5)
| Title |
|---|
| ASTM D1622 |
| ASTM D1708-10 |
| ASTM D2240 |
| ASTM D412 |
| ASTM-Testverfahren D4274-11 |
Also Published As
| Publication number | Publication date |
|---|---|
| FR3043001A1 (fr) | 2017-05-05 |
| US9484212B1 (en) | 2016-11-01 |
| JP2017139443A (ja) | 2017-08-10 |
| TW201715016A (zh) | 2017-05-01 |
| CN106625031A (zh) | 2017-05-10 |
| KR20170054266A (ko) | 2017-05-17 |
| JP6849389B2 (ja) | 2021-03-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |