TW201715016A - 化學機械拋光方法 - Google Patents

化學機械拋光方法 Download PDF

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Publication number
TW201715016A
TW201715016A TW105134452A TW105134452A TW201715016A TW 201715016 A TW201715016 A TW 201715016A TW 105134452 A TW105134452 A TW 105134452A TW 105134452 A TW105134452 A TW 105134452A TW 201715016 A TW201715016 A TW 201715016A
Authority
TW
Taiwan
Prior art keywords
polishing
amine
initiated
curing agent
substrate
Prior art date
Application number
TW105134452A
Other languages
English (en)
Chinese (zh)
Inventor
百年 錢
郭毅
馬提Ｗ 狄羅特
喬治Ｃ 雅各
Original Assignee
陶氏全球科技責任有限公司
羅門哈斯電子材料Ｃｍｐ控股公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 陶氏全球科技責任有限公司, 羅門哈斯電子材料Ｃｍｐ控股公司 filed Critical 陶氏全球科技責任有限公司
Publication of TW201715016A publication Critical patent/TW201715016A/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
    • B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B24B37/245—Pads with fixed abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • B24D11/001—Manufacture of flexible abrasive materials
    • B24D11/003—Manufacture of flexible abrasive materials without embedded abrasive particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
TW105134452A 2015-10-30 2016-10-25 化學機械拋光方法 TW201715016A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/927,704 US9484212B1 (en) 2015-10-30 2015-10-30 Chemical mechanical polishing method

Publications (1)

Publication Number Publication Date
TW201715016A true TW201715016A (zh) 2017-05-01

Family

ID=57189269

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105134452A TW201715016A (zh) 2015-10-30 2016-10-25 化學機械拋光方法

Country Status (7)

Country Link
US (1) US9484212B1 (enExample)
JP (1) JP6849389B2 (enExample)
KR (1) KR20170054266A (enExample)
CN (1) CN106625031A (enExample)
DE (1) DE102016012533A1 (enExample)
FR (1) FR3043001A1 (enExample)
TW (1) TW201715016A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI846844B (zh) * 2019-03-25 2024-07-01 美商Ｃｍｃ材料有限責任公司 增進化學機械拋光（ｃｍｐ）漿料中粒子分散之添加劑
TWI846748B (zh) * 2018-11-06 2024-07-01 美商羅門哈斯電子材料Ｃｍｐ控股公司 化學機械拋光墊及拋光方法

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US20180169827A1 (en) * 2016-12-16 2018-06-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Methods for making chemical mechanical planarization (cmp) polishing pads having integral windows
CN106891246B (zh) * 2017-03-30 2019-05-07 湖北鼎龙控股股份有限公司 一种用于半导体、光学材料和磁性材料表面平坦化的化学机械抛光垫
JP2019050307A (ja) 2017-09-11 2019-03-28 株式会社フジミインコーポレーテッド 研磨方法、ならびに研磨用組成物およびその製造方法
US10464187B2 (en) 2017-12-01 2019-11-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High removal rate chemical mechanical polishing pads from amine initiated polyol containing curatives
US10464188B1 (en) 2018-11-06 2019-11-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad and polishing method
US11772230B2 (en) 2021-01-21 2023-10-03 Rohm And Haas Electronic Materials Cmp Holdings Inc. Formulations for high porosity chemical mechanical polishing pads with high hardness and CMP pads made therewith
KR102561824B1 (ko) 2021-06-02 2023-07-31 에스케이엔펄스 주식회사 연마패드 및 이를 이용한 반도체 소자의 제조방법
CN120206314B (zh) * 2025-05-09 2025-09-05 河北同光半导体股份有限公司 一种大尺寸碳化硅衬底的化学机械抛光方法

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI846748B (zh) * 2018-11-06 2024-07-01 美商羅門哈斯電子材料Ｃｍｐ控股公司 化學機械拋光墊及拋光方法
TWI846844B (zh) * 2019-03-25 2024-07-01 美商Ｃｍｃ材料有限責任公司 增進化學機械拋光（ｃｍｐ）漿料中粒子分散之添加劑

Also Published As

Publication number Publication date
FR3043001A1 (fr) 2017-05-05
US9484212B1 (en) 2016-11-01
JP2017139443A (ja) 2017-08-10
CN106625031A (zh) 2017-05-10
DE102016012533A1 (de) 2017-05-04
KR20170054266A (ko) 2017-05-17
JP6849389B2 (ja) 2021-03-24

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