JP2017130574A5 - - Google Patents

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Publication number
JP2017130574A5
JP2017130574A5 JP2016009532A JP2016009532A JP2017130574A5 JP 2017130574 A5 JP2017130574 A5 JP 2017130574A5 JP 2016009532 A JP2016009532 A JP 2016009532A JP 2016009532 A JP2016009532 A JP 2016009532A JP 2017130574 A5 JP2017130574 A5 JP 2017130574A5
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JP
Japan
Prior art keywords
cluster
gas
substrate
product
generation gas
Prior art date
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Application number
JP2016009532A
Other languages
English (en)
Japanese (ja)
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JP6596340B2 (ja
JP2017130574A (ja
Filing date
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Application filed filed Critical
Priority claimed from JP2016009532A external-priority patent/JP6596340B2/ja
Priority to JP2016009532A priority Critical patent/JP6596340B2/ja
Priority to PCT/JP2016/086607 priority patent/WO2017126248A1/ja
Priority to KR1020187023890A priority patent/KR102071817B1/ko
Priority to US16/071,480 priority patent/US20190035651A1/en
Priority to CN201680079440.8A priority patent/CN108475629B/zh
Publication of JP2017130574A publication Critical patent/JP2017130574A/ja
Publication of JP2017130574A5 publication Critical patent/JP2017130574A5/ja
Publication of JP6596340B2 publication Critical patent/JP6596340B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2016009532A 2016-01-21 2016-01-21 基板洗浄方法および基板洗浄装置 Active JP6596340B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2016009532A JP6596340B2 (ja) 2016-01-21 2016-01-21 基板洗浄方法および基板洗浄装置
CN201680079440.8A CN108475629B (zh) 2016-01-21 2016-12-08 基片清洗方法、基片清洗装置和团簇生成气体的选择方法
KR1020187023890A KR102071817B1 (ko) 2016-01-21 2016-12-08 기판 세정 방법 및 기판 세정 장치, 및 클러스터 생성 가스의 선정 방법
US16/071,480 US20190035651A1 (en) 2016-01-21 2016-12-08 Substrate cleaning method, substrate cleaning device, and method of selecting cluster generating gas
PCT/JP2016/086607 WO2017126248A1 (ja) 2016-01-21 2016-12-08 基板洗浄方法および基板洗浄装置、ならびにクラスター生成ガスの選定方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016009532A JP6596340B2 (ja) 2016-01-21 2016-01-21 基板洗浄方法および基板洗浄装置

Publications (3)

Publication Number Publication Date
JP2017130574A JP2017130574A (ja) 2017-07-27
JP2017130574A5 true JP2017130574A5 (enExample) 2018-10-18
JP6596340B2 JP6596340B2 (ja) 2019-10-23

Family

ID=59362422

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016009532A Active JP6596340B2 (ja) 2016-01-21 2016-01-21 基板洗浄方法および基板洗浄装置

Country Status (5)

Country Link
US (1) US20190035651A1 (enExample)
JP (1) JP6596340B2 (enExample)
KR (1) KR102071817B1 (enExample)
CN (1) CN108475629B (enExample)
WO (1) WO2017126248A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12198947B2 (en) * 2019-10-23 2025-01-14 Tokyo Electron Limited Substrate cleaning method and substrate cleaning device
JP7510334B2 (ja) * 2020-10-30 2024-07-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
CN115103501B (zh) * 2022-06-22 2024-08-16 西北核技术研究所 环形构型气体团簇发生装置及环形构型氪气团簇制备方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5062898A (en) 1990-06-05 1991-11-05 Air Products And Chemicals, Inc. Surface cleaning using a cryogenic aerosol
KR100349948B1 (ko) 1999-11-17 2002-08-22 주식회사 다산 씨.앤드.아이 클러스터를 이용한 건식 세정 장치 및 방법
JP5006134B2 (ja) * 2007-08-09 2012-08-22 東京エレクトロン株式会社 ドライクリーニング方法
JP5575648B2 (ja) * 2008-08-18 2014-08-20 岩谷産業株式会社 クラスタ噴射式加工方法
US7982196B2 (en) * 2009-03-31 2011-07-19 Tel Epion Inc. Method for modifying a material layer using gas cluster ion beam processing
US8187971B2 (en) * 2009-11-16 2012-05-29 Tel Epion Inc. Method to alter silicide properties using GCIB treatment
US8173980B2 (en) * 2010-05-05 2012-05-08 Tel Epion Inc. Gas cluster ion beam system with cleaning apparatus
US9183965B2 (en) * 2010-11-30 2015-11-10 Nomura Plating Co., Ltd. Conductive hard carbon film and method for forming the same
US8440578B2 (en) * 2011-03-28 2013-05-14 Tel Epion Inc. GCIB process for reducing interfacial roughness following pre-amorphization
JP5785818B2 (ja) * 2011-08-26 2015-09-30 岩谷産業株式会社 クラスタによる加工方法
JP6048043B2 (ja) * 2012-09-28 2016-12-21 東京エレクトロン株式会社 基板洗浄方法、基板洗浄装置及び真空処理システム
US20150064911A1 (en) * 2013-08-27 2015-03-05 Tokyo Electron Limited Substrate processing method, substrate processing apparatus and storage medium
WO2015077604A1 (en) * 2013-11-22 2015-05-28 Tel Epion Inc. Molecular beam enhanced gcib treatment
JP6196920B2 (ja) * 2014-03-06 2017-09-13 東京エレクトロン株式会社 グラフェン加工方法
JP6566683B2 (ja) * 2014-07-02 2019-08-28 東京エレクトロン株式会社 基板洗浄方法および基板洗浄装置

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