CN108475629B - 基片清洗方法、基片清洗装置和团簇生成气体的选择方法 - Google Patents

基片清洗方法、基片清洗装置和团簇生成气体的选择方法 Download PDF

Info

Publication number
CN108475629B
CN108475629B CN201680079440.8A CN201680079440A CN108475629B CN 108475629 B CN108475629 B CN 108475629B CN 201680079440 A CN201680079440 A CN 201680079440A CN 108475629 B CN108475629 B CN 108475629B
Authority
CN
China
Prior art keywords
gas
cluster
substrate
generating gas
cluster generating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201680079440.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN108475629A (zh
Inventor
土桥和也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN108475629A publication Critical patent/CN108475629A/zh
Application granted granted Critical
Publication of CN108475629B publication Critical patent/CN108475629B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
    • B08B7/0071—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02096—Cleaning only mechanical cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN201680079440.8A 2016-01-21 2016-12-08 基片清洗方法、基片清洗装置和团簇生成气体的选择方法 Active CN108475629B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016009532A JP6596340B2 (ja) 2016-01-21 2016-01-21 基板洗浄方法および基板洗浄装置
JP2016-009532 2016-01-21
PCT/JP2016/086607 WO2017126248A1 (ja) 2016-01-21 2016-12-08 基板洗浄方法および基板洗浄装置、ならびにクラスター生成ガスの選定方法

Publications (2)

Publication Number Publication Date
CN108475629A CN108475629A (zh) 2018-08-31
CN108475629B true CN108475629B (zh) 2022-08-19

Family

ID=59362422

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680079440.8A Active CN108475629B (zh) 2016-01-21 2016-12-08 基片清洗方法、基片清洗装置和团簇生成气体的选择方法

Country Status (5)

Country Link
US (1) US20190035651A1 (enExample)
JP (1) JP6596340B2 (enExample)
KR (1) KR102071817B1 (enExample)
CN (1) CN108475629B (enExample)
WO (1) WO2017126248A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102825479B1 (ko) * 2019-10-23 2025-06-30 도쿄엘렉트론가부시키가이샤 기판 세정 방법 및 기판 세정 장치
JP7510334B2 (ja) * 2020-10-30 2024-07-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
CN115103501B (zh) * 2022-06-22 2024-08-16 西北核技术研究所 环形构型气体团簇发生装置及环形构型氪气团簇制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009043975A (ja) * 2007-08-09 2009-02-26 Tokyo Electron Ltd ドライクリーニング方法、基板処理装置、半導体装置の製造方法及び記憶媒体
CN103210114A (zh) * 2010-11-30 2013-07-17 株式会社野村镀金 导电性硬质碳膜及其成膜方法
TW201535461A (zh) * 2013-11-22 2015-09-16 Tel Epion Inc 分子束增強氣體團簇離子束處理

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5062898A (en) 1990-06-05 1991-11-05 Air Products And Chemicals, Inc. Surface cleaning using a cryogenic aerosol
KR100349948B1 (ko) 1999-11-17 2002-08-22 주식회사 다산 씨.앤드.아이 클러스터를 이용한 건식 세정 장치 및 방법
CN102124544B (zh) * 2008-08-18 2013-11-13 岩谷产业株式会社 团簇喷射式加工方法、半导体元件、微机电元件及光学零件
US7982196B2 (en) * 2009-03-31 2011-07-19 Tel Epion Inc. Method for modifying a material layer using gas cluster ion beam processing
US8187971B2 (en) * 2009-11-16 2012-05-29 Tel Epion Inc. Method to alter silicide properties using GCIB treatment
US8173980B2 (en) * 2010-05-05 2012-05-08 Tel Epion Inc. Gas cluster ion beam system with cleaning apparatus
US8440578B2 (en) * 2011-03-28 2013-05-14 Tel Epion Inc. GCIB process for reducing interfacial roughness following pre-amorphization
JP5785818B2 (ja) * 2011-08-26 2015-09-30 岩谷産業株式会社 クラスタによる加工方法
JP6048043B2 (ja) 2012-09-28 2016-12-21 東京エレクトロン株式会社 基板洗浄方法、基板洗浄装置及び真空処理システム
US20150064911A1 (en) * 2013-08-27 2015-03-05 Tokyo Electron Limited Substrate processing method, substrate processing apparatus and storage medium
JP6196920B2 (ja) * 2014-03-06 2017-09-13 東京エレクトロン株式会社 グラフェン加工方法
JP6566683B2 (ja) * 2014-07-02 2019-08-28 東京エレクトロン株式会社 基板洗浄方法および基板洗浄装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009043975A (ja) * 2007-08-09 2009-02-26 Tokyo Electron Ltd ドライクリーニング方法、基板処理装置、半導体装置の製造方法及び記憶媒体
CN103210114A (zh) * 2010-11-30 2013-07-17 株式会社野村镀金 导电性硬质碳膜及其成膜方法
TW201535461A (zh) * 2013-11-22 2015-09-16 Tel Epion Inc 分子束增強氣體團簇離子束處理

Also Published As

Publication number Publication date
KR102071817B1 (ko) 2020-01-30
JP6596340B2 (ja) 2019-10-23
KR20180104057A (ko) 2018-09-19
JP2017130574A (ja) 2017-07-27
WO2017126248A1 (ja) 2017-07-27
CN108475629A (zh) 2018-08-31
US20190035651A1 (en) 2019-01-31

Similar Documents

Publication Publication Date Title
KR102800641B1 (ko) 웨이퍼 대 웨이퍼 막 두께 매칭을 위해 챔버 축적물의 함수로서 증착 사이클들의 수의 조절에 의한 두께 보상
JP6566683B2 (ja) 基板洗浄方法および基板洗浄装置
TWI681437B (zh) 以低溫流體混合物處理基板的系統及方法
CN108475629B (zh) 基片清洗方法、基片清洗装置和团簇生成气体的选择方法
JP5815967B2 (ja) 基板洗浄装置及び真空処理システム
CN102117733B (zh) 基板处理装置及其清洁方法
JP6141855B2 (ja) プラズマエッチング方法及びプラズマエッチング装置
JP5811540B2 (ja) 金属膜の加工方法及び加工装置
JP6545053B2 (ja) 処理装置および処理方法、ならびにガスクラスター発生装置および発生方法
US20050178332A1 (en) System for in-situ generation of fluorine radicals and/or fluorine-containing interhalogen (XFn) compounds for use in cleaning semiconductor processing chambers
JP6442622B2 (ja) 基板処理装置のチャンバークリーニング方法
US9818582B2 (en) Plasma processing method
JP2015167155A (ja) プラズマ処理装置のクリーニング方法
CN114798602B (zh) 一种颗粒污染物的清洗方法
JP2010199475A (ja) プラズマ処理装置のクリーニング方法及び記憶媒体
WO2016158054A1 (ja) 処理装置および処理方法、ならびにガスクラスター発生装置および発生方法
JP2016134553A (ja) ガス供給系清浄化方法および基板処理装置
Cho et al. Removal of nano-sized surface particles by CO2 gas cluster collisions for dry cleaning
JP2017130574A5 (enExample)
JP7291691B2 (ja) 基板を低温流体混合物で処理するためのシステム及び方法
JP2005012197A (ja) エアロゾル洗浄方法及び装置
Kim et al. Toward CO2 Beam Cleaning of 20-nm Particles in Atmospheric Pressure
Kravchenko et al. Coagulation and dynamics nanoparticles in low pressure plasma jets
Bȩben et al. Mean-field approach to Pb-mediated growth of Ge on Si (111): Comparison with experiment and kinetic Monte Carlo simulations

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant