JP6596340B2 - 基板洗浄方法および基板洗浄装置 - Google Patents

基板洗浄方法および基板洗浄装置 Download PDF

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Publication number
JP6596340B2
JP6596340B2 JP2016009532A JP2016009532A JP6596340B2 JP 6596340 B2 JP6596340 B2 JP 6596340B2 JP 2016009532 A JP2016009532 A JP 2016009532A JP 2016009532 A JP2016009532 A JP 2016009532A JP 6596340 B2 JP6596340 B2 JP 6596340B2
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gas
cluster
cluster generation
substrate
generation gas
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JP2017130574A5 (enExample
JP2017130574A (ja
Inventor
和也 土橋
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2016009532A priority Critical patent/JP6596340B2/ja
Priority to CN201680079440.8A priority patent/CN108475629B/zh
Priority to KR1020187023890A priority patent/KR102071817B1/ko
Priority to US16/071,480 priority patent/US20190035651A1/en
Priority to PCT/JP2016/086607 priority patent/WO2017126248A1/ja
Publication of JP2017130574A publication Critical patent/JP2017130574A/ja
Publication of JP2017130574A5 publication Critical patent/JP2017130574A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
    • B08B7/0071—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02096—Cleaning only mechanical cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2016009532A 2016-01-21 2016-01-21 基板洗浄方法および基板洗浄装置 Active JP6596340B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2016009532A JP6596340B2 (ja) 2016-01-21 2016-01-21 基板洗浄方法および基板洗浄装置
CN201680079440.8A CN108475629B (zh) 2016-01-21 2016-12-08 基片清洗方法、基片清洗装置和团簇生成气体的选择方法
KR1020187023890A KR102071817B1 (ko) 2016-01-21 2016-12-08 기판 세정 방법 및 기판 세정 장치, 및 클러스터 생성 가스의 선정 방법
US16/071,480 US20190035651A1 (en) 2016-01-21 2016-12-08 Substrate cleaning method, substrate cleaning device, and method of selecting cluster generating gas
PCT/JP2016/086607 WO2017126248A1 (ja) 2016-01-21 2016-12-08 基板洗浄方法および基板洗浄装置、ならびにクラスター生成ガスの選定方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016009532A JP6596340B2 (ja) 2016-01-21 2016-01-21 基板洗浄方法および基板洗浄装置

Publications (3)

Publication Number Publication Date
JP2017130574A JP2017130574A (ja) 2017-07-27
JP2017130574A5 JP2017130574A5 (enExample) 2018-10-18
JP6596340B2 true JP6596340B2 (ja) 2019-10-23

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JP2016009532A Active JP6596340B2 (ja) 2016-01-21 2016-01-21 基板洗浄方法および基板洗浄装置

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US (1) US20190035651A1 (enExample)
JP (1) JP6596340B2 (enExample)
KR (1) KR102071817B1 (enExample)
CN (1) CN108475629B (enExample)
WO (1) WO2017126248A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021079779A1 (ja) * 2019-10-23 2021-04-29 東京エレクトロン株式会社 基板洗浄方法、および基板洗浄装置
JP7510334B2 (ja) * 2020-10-30 2024-07-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
CN115103501B (zh) * 2022-06-22 2024-08-16 西北核技术研究所 环形构型气体团簇发生装置及环形构型氪气团簇制备方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5062898A (en) 1990-06-05 1991-11-05 Air Products And Chemicals, Inc. Surface cleaning using a cryogenic aerosol
KR100349948B1 (ko) 1999-11-17 2002-08-22 주식회사 다산 씨.앤드.아이 클러스터를 이용한 건식 세정 장치 및 방법
JP5006134B2 (ja) * 2007-08-09 2012-08-22 東京エレクトロン株式会社 ドライクリーニング方法
KR101223945B1 (ko) * 2008-08-18 2013-01-21 고쿠리츠 다이가쿠 호진 교토 다이가쿠 클러스터 분사식 가공 방법, 반도체 소자, 미소 기전 소자, 및 광학 부품
US7982196B2 (en) * 2009-03-31 2011-07-19 Tel Epion Inc. Method for modifying a material layer using gas cluster ion beam processing
US8187971B2 (en) * 2009-11-16 2012-05-29 Tel Epion Inc. Method to alter silicide properties using GCIB treatment
US8173980B2 (en) * 2010-05-05 2012-05-08 Tel Epion Inc. Gas cluster ion beam system with cleaning apparatus
WO2012073869A1 (ja) * 2010-11-30 2012-06-07 株式会社野村鍍金 導電性硬質炭素膜及びその成膜方法
US8440578B2 (en) * 2011-03-28 2013-05-14 Tel Epion Inc. GCIB process for reducing interfacial roughness following pre-amorphization
JP5785818B2 (ja) * 2011-08-26 2015-09-30 岩谷産業株式会社 クラスタによる加工方法
JP6048043B2 (ja) 2012-09-28 2016-12-21 東京エレクトロン株式会社 基板洗浄方法、基板洗浄装置及び真空処理システム
US20150064911A1 (en) * 2013-08-27 2015-03-05 Tokyo Electron Limited Substrate processing method, substrate processing apparatus and storage medium
US9236221B2 (en) * 2013-11-22 2016-01-12 Tel Epion Inc. Molecular beam enhanced GCIB treatment
JP6196920B2 (ja) * 2014-03-06 2017-09-13 東京エレクトロン株式会社 グラフェン加工方法
JP6566683B2 (ja) * 2014-07-02 2019-08-28 東京エレクトロン株式会社 基板洗浄方法および基板洗浄装置

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Publication number Publication date
WO2017126248A1 (ja) 2017-07-27
CN108475629B (zh) 2022-08-19
KR102071817B1 (ko) 2020-01-30
CN108475629A (zh) 2018-08-31
US20190035651A1 (en) 2019-01-31
JP2017130574A (ja) 2017-07-27
KR20180104057A (ko) 2018-09-19

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