KR102071817B1 - 기판 세정 방법 및 기판 세정 장치, 및 클러스터 생성 가스의 선정 방법 - Google Patents

기판 세정 방법 및 기판 세정 장치, 및 클러스터 생성 가스의 선정 방법 Download PDF

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KR102071817B1
KR102071817B1 KR1020187023890A KR20187023890A KR102071817B1 KR 102071817 B1 KR102071817 B1 KR 102071817B1 KR 1020187023890 A KR1020187023890 A KR 1020187023890A KR 20187023890 A KR20187023890 A KR 20187023890A KR 102071817 B1 KR102071817 B1 KR 102071817B1
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gas
cluster
substrate
substrate cleaning
nozzle
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Korean (ko)
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KR20180104057A (ko
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가즈야 도바시
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도쿄엘렉트론가부시키가이샤
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    • H01L21/02046—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
    • B08B7/0071—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by heating
    • H01L21/02337—
    • H01L21/304—
    • H01L21/67034—
    • H01L21/67248—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/60—Cleaning only by mechanical processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

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  • Cleaning Or Drying Semiconductors (AREA)
KR1020187023890A 2016-01-21 2016-12-08 기판 세정 방법 및 기판 세정 장치, 및 클러스터 생성 가스의 선정 방법 Active KR102071817B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2016-009532 2016-01-21
JP2016009532A JP6596340B2 (ja) 2016-01-21 2016-01-21 基板洗浄方法および基板洗浄装置
PCT/JP2016/086607 WO2017126248A1 (ja) 2016-01-21 2016-12-08 基板洗浄方法および基板洗浄装置、ならびにクラスター生成ガスの選定方法

Publications (2)

Publication Number Publication Date
KR20180104057A KR20180104057A (ko) 2018-09-19
KR102071817B1 true KR102071817B1 (ko) 2020-01-30

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KR1020187023890A Active KR102071817B1 (ko) 2016-01-21 2016-12-08 기판 세정 방법 및 기판 세정 장치, 및 클러스터 생성 가스의 선정 방법

Country Status (5)

Country Link
US (1) US20190035651A1 (enExample)
JP (1) JP6596340B2 (enExample)
KR (1) KR102071817B1 (enExample)
CN (1) CN108475629B (enExample)
WO (1) WO2017126248A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI867065B (zh) * 2019-10-23 2024-12-21 日商東京威力科創股份有限公司 基板洗淨方法、及基板洗淨裝置
JP7510334B2 (ja) * 2020-10-30 2024-07-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
CN115103501B (zh) * 2022-06-22 2024-08-16 西北核技术研究所 环形构型气体团簇发生装置及环形构型氪气团簇制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009043975A (ja) 2007-08-09 2009-02-26 Tokyo Electron Ltd ドライクリーニング方法、基板処理装置、半導体装置の製造方法及び記憶媒体
JP2013046001A (ja) 2011-08-26 2013-03-04 Iwatani Internatl Corp クラスタによる加工方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5062898A (en) 1990-06-05 1991-11-05 Air Products And Chemicals, Inc. Surface cleaning using a cryogenic aerosol
KR100349948B1 (ko) 1999-11-17 2002-08-22 주식회사 다산 씨.앤드.아이 클러스터를 이용한 건식 세정 장치 및 방법
WO2010021265A1 (ja) * 2008-08-18 2010-02-25 岩谷産業株式会社 クラスタ噴射式加工方法、半導体素子、微小電気機械素子、及び、光学部品
US7982196B2 (en) * 2009-03-31 2011-07-19 Tel Epion Inc. Method for modifying a material layer using gas cluster ion beam processing
US8187971B2 (en) * 2009-11-16 2012-05-29 Tel Epion Inc. Method to alter silicide properties using GCIB treatment
US8173980B2 (en) * 2010-05-05 2012-05-08 Tel Epion Inc. Gas cluster ion beam system with cleaning apparatus
CN103210114B (zh) * 2010-11-30 2015-03-11 株式会社野村镀金 导电性硬质碳膜及其成膜方法
US8440578B2 (en) * 2011-03-28 2013-05-14 Tel Epion Inc. GCIB process for reducing interfacial roughness following pre-amorphization
JP6048043B2 (ja) * 2012-09-28 2016-12-21 東京エレクトロン株式会社 基板洗浄方法、基板洗浄装置及び真空処理システム
US20150064911A1 (en) * 2013-08-27 2015-03-05 Tokyo Electron Limited Substrate processing method, substrate processing apparatus and storage medium
US9236221B2 (en) * 2013-11-22 2016-01-12 Tel Epion Inc. Molecular beam enhanced GCIB treatment
JP6196920B2 (ja) * 2014-03-06 2017-09-13 東京エレクトロン株式会社 グラフェン加工方法
JP6566683B2 (ja) * 2014-07-02 2019-08-28 東京エレクトロン株式会社 基板洗浄方法および基板洗浄装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009043975A (ja) 2007-08-09 2009-02-26 Tokyo Electron Ltd ドライクリーニング方法、基板処理装置、半導体装置の製造方法及び記憶媒体
JP2013046001A (ja) 2011-08-26 2013-03-04 Iwatani Internatl Corp クラスタによる加工方法

Also Published As

Publication number Publication date
CN108475629B (zh) 2022-08-19
JP2017130574A (ja) 2017-07-27
WO2017126248A1 (ja) 2017-07-27
JP6596340B2 (ja) 2019-10-23
US20190035651A1 (en) 2019-01-31
CN108475629A (zh) 2018-08-31
KR20180104057A (ko) 2018-09-19

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